摘要:
A fuel pump is obtained, by which a high fuel pump-up height and a short fuel pump-up time can be achieved without deteriorating a fuel injection state by discharging a vapor toward the [Means for Resolution] An air exhaust port having a channel area s satisfying s≧0.07 mm2 is provided in a lower channel including the terminal of a pump channel, and an air exhaust valve mechanism that opens the valve when the pump is started to exhaust intake air and closes the valve as soon as the application of pressure on the fuel is started to prevent the fuel from being exhausted to the outside of the pump channel is provided. Also, a vapor exhaust port is provided in the pump channel between the air exhaust port and the inlet portion of the pump channel, and a vapor exhaust valve mechanism that closes the valve when the pump is started to prevent a negative pressure at the fuel intake port from dropping and opens the valve when application of pressure on the fuel is started to exhaust fuel containing a vapor to the outside of the pump channel is provided.
摘要:
A ferroelectric memory including a ferroelectric capacitor to store data; a bit line inputting and outputting data with respect to the ferroelectric capacitor; a control circuit having a first field effect transistor to be connected to the bit line and a reference potential, and to lower potential of the bit line when the bit line is connected to the ferroelectric capacitor; a reference ferroelectric capacitor to store fixed data; a reference bit line to input and output data with respect to the reference ferroelectric capacitor; and a second field effect transistor to be connected to the reference bit line and the reference potential, in which the first and second field effect transistors configure a current mirror circuit, is provided.
摘要:
A ferroelectric storage device includes a ferroelectric capacitor C1, a bit line BL, a first switching element 103 selectively connecting the ferroelectric capacitor C1 and the bit line BL, a first transistor 203 connected to the bit line BL and to a reference potential, a reference ferroelectric capacitor CR1, a reference bit line Lref, a reference switching element 105 selectively connecting the reference ferroelectric capacitor CR1 and the reference bit line Lref, a second transistor 201 connected to the reference bit line Lref and to the reference potential, potential control circuits 110 and 200 controlling a potential of the bit line BL and a potential of the reference bit line Lref, and a timing control circuit 210 controlling a detection timing for detecting data on the bit line.
摘要:
A fuel feeding apparatus is provided with a cap body for closing an opening of the tank, and a liquid level detector that is attached to the cap body and detects a liquid level of the fuel. The liquid level detector includes a floating unit immersed in the fuel and a strain gauge embedded in the floating unit in proximity to the cap body to detect a compression stress caused by buoyant force of the floating unit.
摘要:
A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.
摘要:
A ferroelectric memory including a ferroelectric capacitor to store data; a bit line inputting and outputting data with respect to the ferroelectric capacitor; a control circuit having a first field effect transistor to be connected to the bit line and a reference potential, and to lower potential of the bit line when the bit line is connected to the ferroelectric capacitor; a reference ferroelectric capacitor to store fixed data; a reference bit line to input and output data with respect to the reference ferroelectric capacitor; and a second field effect transistor to be connected to the reference bit line and the reference potential, in which the first and second field effect transistors configure a current mirror circuit, is provided.
摘要:
A fuel supply apparatus having a fuel pressure regulator (60) for regulating the pressure of fuel discharged from a fuel pump (4) to a predetermined pressure, the fuel pressure regulator (60) including: a first chamber (62), formed in a case (61), into which fuel discharged from the fuel pump (4) flows, and a second chamber (63), into which the fuel flows via the first chamber (62); a fuel limiting means (64) disposed between the first chamber (62) and the second chamber (63), for limiting fuel flowing from the first chamber (62) into the second chamber (63); a pilot valve unit (65) having a passageway for opening to discharge fuel tank (2), when the fuel pressure in the second chamber (63) is more than a first set pressure (Pp); and a main valve unit (66) having a passageway for opening to discharge fuel into the fuel tank (2) when the fuel pressure in the first chamber (62) is equal to a second set pressure (Pm) between the first set pressure (Pp) and the predetermined pressure (Pi), whereby, in cases where returning flow volume drops, the pressure of the fuel delivered under pressure to the injector does not drop.
摘要:
A semiconductor memory device is characterized by including a bit line, a transistor coupled to the bit line, a ferroelectric memory cell coupled to the bit line via the transistor, a shift circuit coupled to the bit line to lower a data potential that appears on the bit line in response to data stored in the memory cell, and a sense amplifier coupled to the bit line and to a ground potential to amplify a potential difference between the data potential lowered by the shift circuit and the ground potential.
摘要:
A semiconductor integrated circuit includes a switch unit for controlling the supply of a power source voltage to a signal amplification circuit for receiving an input signal, and a control unit for selectively turning ON and OFF the switch unit in accordance with the amplitude or frequency of the input signal. By the constitution, it is possible to provide an input circuit or an output circuit capable of being applied to an input/output interface adapted for a small amplitude operation.
摘要:
The present invention relates to a polycarbonate which can be obtained by a melting method and has a viscosity-average molecular weight of 16000 to 27000, and whose loss angle &dgr; and complex viscosity &eegr;* (Pa·s) measured under the conditions of 250° C. and an angular velocity of 10 rad/s satisfy the following relation (1): 4,700≦Tan &dgr;/(&eegr;*)−0.87 (1)