公开(公告)号：US20140264927A1

公开(公告)日：2014-09-18

申请号：US13903740

申请日：2013-05-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Hung-Yi Kuo

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L25/0657 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/76829 ,  H01L23/28 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02333 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05684 ,  H01L2224/1191 ,  H01L2224/13 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13184 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06558 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

摘要： Disclosed herein is a single mask package apparatus on a device comprising a first substrate having a land disposed on a first surface, a stud disposed on the land and a protective layer disposed over the first surface of the first substrate and around the stud. The protective layer may optionally have a thickness of at least 3 μm. A PPI may be disposed over the protective layer and in electrical contact with the stud, with a first portion of the PPI extending laterally from the stud. An interconnect may be disposed on and in electrical contact with the first portion of the PPI, and a second substrate mounted on the interconnect. A molding compound may be disposed over the PPI and around the interconnect. The stud may be a substantially solid material having a cylindrical cross section and may optionally be wirebonded to the land.

摘要翻译： 本文公开了一种在装置上的单个掩模封装装置，其包括具有设置在第一表面上的焊盘的第一基板和设置在焊盘上的螺柱以及设置在第一基板的第一表面上并围绕螺柱的保护层。 保护层可以任选地具有至少3μm的厚度。 PPI可以设置在保护层上并与螺柱电接触，PPI的第一部分从螺柱横向延伸。 互连可以设置在PPI的第一部分上并与其接触，以及安装在互连上的第二基板。 模制化合物可以设置在PPI上方和互连周围。 螺柱可以是具有圆柱形横截面的基本上固体的材料，并且可以任选地引线接合到焊盘。

公开(公告)号：US11640033B2

公开(公告)日：2023-05-02

申请号：US17140134

申请日：2021-01-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Feng-Wei Kuo ,  Chewn-Pu Jou ,  Cheng-Tse Tang ,  Hung-Yi Kuo

IPC分类号： G02B6/30

摘要： An optical coupler is provided. The optical coupler includes: a first optical structure, and a second optical structure disposed over the first optical structure. The first optical structure includes: a first substrate, a first cladding layer disposed on the first substrate, and a first waveguide disposed on the first cladding layer. The first waveguide includes a first coupling portion, and the first coupling portion including a first taper part. The second optical structure includes: a second substrate, a dielectric layer disposed on the second substrate; and a second waveguide disposed on the dielectric layer. The second waveguide includes a second coupling portion, and the second coupling portion including a second taper part. The second taper part is disposed on and optically coupled with the first taper part, and a taper direction of the first taper part is the same as a taper direction of the second taper part.

公开(公告)号：US20230090895A1

公开(公告)日：2023-03-23

申请号：US17991423

申请日：2022-11-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo Lung Pan ,  Shu-Rong Chun ,  Teng-Yuan Lo ,  Hung-Yi Kuo ,  Chih-Horng Chang ,  Tin-Hao Kuo ,  Hao-Yi Tsai

IPC分类号： H01L23/522 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065

摘要： In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

公开(公告)号：US20220165675A1

公开(公告)日：2022-05-26

申请号：US17666579

申请日：2022-02-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tzu-Sung Huang ,  Cheng-Chieh Hsieh ,  Hsiu-Jen Lin ,  Hui-Jung Tsai ,  Hung-Yi Kuo ,  Hao-Yi Tsai ,  Ming-Hung Tseng ,  Yen-Liang Lin ,  Chun-Ti Lu ,  Chung-Ming Weng

IPC分类号： H01L23/538 ,  H01L23/31 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00

摘要： A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion.
The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion. The first insulating encapsulation laterally encapsulates the second semiconductor die, the first conductive pillars and the second portion.

公开(公告)号：US11139249B2

公开(公告)日：2021-10-05

申请号：US16783392

申请日：2020-02-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Hung-Yi Kuo ,  Chung-Shi Liu ,  Hao-Yi Tsai ,  Cheng-Chieh Hsieh ,  Tsung-Yuan Yu

IPC分类号： H01L23/538 ,  H01L25/065 ,  H01L21/56 ,  H01L23/498 ,  H01L25/00

摘要： A packaged semiconductor device including a first die attached to a redistribution structure, a second die attached to the first die, and a molding compound surrounding the first die and the second die and a method of forming the same are disclosed. In an embodiment, a method includes forming first conductive pillars over and electrically coupled to a first redistribution structure; attaching a first die to the first redistribution structure, the first die including second conductive pillars; attaching a second die to the first die adjacent the second conductive pillars; encapsulating the first conductive pillars, the first die, and the second die with an encapsulant; forming a second redistribution structure over the encapsulant, the first conductive pillars, the first die, and the second die; and bonding a third die to the first redistribution structure.

公开(公告)号：US20210305212A1

公开(公告)日：2021-09-30

申请号：US17315381

申请日：2021-05-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Kang Hsieh ,  Hung-Yi Kuo ,  Hao-Yi Tsai ,  Kuo-Lung Pan ,  Ting Hao Kuo ,  Yu-Chia Lai ,  Mao-Yen Chang ,  Po-Yuan Teng ,  Shu-Rong Chun

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/00

摘要： A manufacturing method of a semiconductor package includes the following steps. At least one lower semiconductor device is provided. A plurality of conductive pillars are formed on the at least one lower semiconductor device. A dummy die is disposed on a side of the at least one lower semiconductor device. An upper semiconductor device is disposed on the at least one lower semiconductor device and the dummy die, wherein the upper semiconductor device reveals a portion of the at least one lower semiconductor device where the plurality of conductive pillars are disposed. The at least one lower semiconductor device, the dummy die, the upper semiconductor device, and the plurality of conductive pillars are encapsulated in an encapsulating material. A redistribution structure is formed over the upper semiconductor device and the plurality of conductive pillars.

公开(公告)号：US10991649B2

公开(公告)日：2021-04-27

申请号：US16717630

申请日：2019-12-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Tsung-Yuan Yu ,  Hao-Yi Tsai ,  Chao-Wen Shih ,  Hung-Yi Kuo ,  Pi-Lan Chang

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/14

摘要： A semiconductor device includes a first substrate, a pad array, a conductive bump, a first via and a dielectric. The pad array, formed on a surface of the first substrate, includes a first type pad and a second type pad at a same level. The conductive bump connects one of the first type pad of the second type pad to a second substrate. The first via, connected to a conductive feature at a different level to the first type pad, is located within a projection area of the first type pad and directly contacts the first type pad. The second type pad is laterally connected with a conductive trace on the same level. The conductive trace is connected to a second via at a same level with the first via. The dielectric in the first substrate contacts the second type pad. The second type pad is floated on the dielectric.

公开(公告)号：US10720495B2

公开(公告)日：2020-07-21

申请号：US14302739

申请日：2014-06-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Tsung-Yuan Yu ,  Hao-Yi Tsai ,  Chao-Wen Shih ,  Hung-Yi Kuo ,  Chia-Chun Miao

IPC分类号： H01L21/78 ,  H01L29/06 ,  H01L23/00 ,  H01L21/304

摘要： A semiconductor device includes a substrate and a bump. The substrate includes a first surface and a second surface. A notch is at the second surface and at a sidewall of the substrate. A depth of the notch is smaller than about half the thickness of the substrate. The bump is disposed on the first surface of the substrate.

公开(公告)号：US20200035576A1

公开(公告)日：2020-01-30

申请号：US16590861

申请日：2019-10-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Hung-Yi Kuo ,  Hao-Yi Tsai

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L23/64

摘要： A structure includes a device die, and an encapsulating material encapsulating the device die therein. The encapsulating material has a top surface coplanar with a top surface of the device die, and a cavity in the encapsulating material. The cavity penetrates through the encapsulating material.

公开(公告)号：US20200006220A1

公开(公告)日：2020-01-02

申请号：US16266446

申请日：2019-02-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo Lung Pan ,  Shu-Rong Chun ,  Teng-Yuan Lo ,  Hung-Yi Kuo ,  Chih-Horng Chang ,  Tin-Hao Kuo ,  Hao-Yi Tsai

IPC分类号： H01L23/522 ,  H01L23/31 ,  H01L23/29 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L25/065

摘要： In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.