公开(公告)号：US20070138491A1

公开(公告)日：2007-06-21

申请号：US11638581

申请日：2006-12-14

申请人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

发明人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

IPC分类号： H01L33/00

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0021 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00

摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light emitting portion and an oxide film deposited on the oxynitride film. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride film deposited adjacent to the facet of the cavity and an oxide film deposited on the oxynitride film.

摘要翻译： 提供了一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由邻近沉积的氮氧化物膜形成 发光部分和沉积在氧氮化物膜上的氧化膜。 还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由邻近腔的沉积物沉积的氧氮化物膜和沉积在氧氮化物膜上的氧化膜形成的涂膜涂覆空腔的小面。

公开(公告)号：US07199398B2

公开(公告)日：2007-04-03

申请号：US10719739

申请日：2003-11-20

申请人： Tomoki Ono ,  Shigetoshi Ito ,  Toshiyuki Okumura ,  Hirokazu Mouri ,  Kyoko Matsuda ,  Toshiyuki Kawakami ,  Takeshi Kamikawa ,  Yoshihiko Tani

发明人： Tomoki Ono ,  Shigetoshi Ito ,  Toshiyuki Okumura ,  Hirokazu Mouri ,  Kyoko Matsuda ,  Toshiyuki Kawakami ,  Takeshi Kamikawa ,  Yoshihiko Tani

IPC分类号： H01L29/10 ,  H01L29/22 ,  H01L21/00 ,  H01S3/097

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/32341

摘要： A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.

摘要翻译： 氮化物半导体发光器件至少包括衬底，由主要包含In和Ga的氮化物半导体形成的有源层，p电极和n电极。 p电极和n电极中的至少一个电分离成至少两个区域。

公开(公告)号：US20060202188A1

公开(公告)日：2006-09-14

申请号：US11435932

申请日：2006-05-18

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L31/109 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

公开(公告)号：US20060133442A1

公开(公告)日：2006-06-22

申请号：US11311138

申请日：2005-12-20

申请人： Masahumi Kondou ,  Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Masahumi Kondou ,  Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/2231 ,  H01S5/34333

摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.

摘要翻译： 在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。 以这种方式，获得其中将小面涂层铺设在粘合层上的结构。

公开(公告)号：US20060038166A1

公开(公告)日：2006-02-23

申请号：US11206222

申请日：2005-08-18

申请人： Yuhzoh Tsuda ,  Takeshi Kamikawa

发明人： Yuhzoh Tsuda ,  Takeshi Kamikawa

IPC分类号： H01L29/06

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/3202

摘要： A first region and a second region that has a defect density of which the value is higher than that of the first region are respectively formed so as to be aligned in stripe form in the direction parallel to the direction in which a dug out region extends, where atoms that terminate the surface of the first region are different from atoms that terminate the surface of the aforementioned second region, and the dug out region includes the first region and the second region.

摘要翻译： 具有比第一区域的缺陷密度高的缺陷密度的第一区域和第二区域分别形成为在平行于挖出区域延伸的方向的方向上以条纹的形式排列， 其中终止第一区域的表面的原子不同于终止上述第二区域的表面的原子，并且该挖出区域包括第一区域和第二区域。

公开(公告)号：US06628249B1

公开(公告)日：2003-09-30

申请号：US09711353

申请日：2000-11-09

申请人： Takeshi Kamikawa ,  Shigetoshi Ito ,  Mototaka Taneya

发明人： Takeshi Kamikawa ,  Shigetoshi Ito ,  Mototaka Taneya

IPC分类号： G09G306

CPC分类号： H05B33/0866 ,  G09G3/14 ,  G09G3/2014 ,  G09G3/2081 ,  G09G3/32 ,  G09G2310/0272 ,  G09G2320/0626 ,  G09G2320/0666 ,  G09G2330/021 ,  H01L2224/48091 ,  H01L2224/49107 ,  H05B33/0818 ,  H05B33/0821 ,  H05B33/086 ,  H01L2924/00014

摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

摘要翻译： 发光装置包括发光部分，用于发光，光的颜色以驱动电流的值改变;驱动部分，用于驱动发光部分，使得发光部分发出具有所需颜色的光 并且通过基于指定期望颜色的信号和指定期望强度的信号产生驱动电流并且通过将驱动电流施加到发光部分来产生期望的强度。

公开(公告)号：US09857059B2

公开(公告)日：2018-01-02

申请号：US14353741

申请日：2012-09-14

申请人： Takeshi Kamikawa

发明人： Takeshi Kamikawa

IPC分类号： F21V7/00 ,  F21V13/08 ,  H01L33/60 ,  F21K9/90 ,  F21V7/22 ,  H01L25/075 ,  H01L23/00 ,  F21Y115/10

CPC分类号： F21V13/08 ,  F21K9/90 ,  F21V7/0066 ,  F21V7/22 ,  F21Y2115/10 ,  H01L24/45 ,  H01L25/0753 ,  H01L33/60 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/181 ,  H01L2933/0091 ,  Y10T29/4913 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting device includes a light emitting element, a ceramic substrate including a mounting surface on which the light emitting element is mounted, and a non-mounting surface opposite to the mounting surface and on which the light emitting element is not mounted, and a metal reflection film formed on the non-mounting surface. The metal reflection film reflects light from light emitting element that has passed through the ceramic substrate.

公开(公告)号：US20150029725A1

公开(公告)日：2015-01-29

申请号：US14353741

申请日：2012-09-14

申请人： Takeshi Kamikawa

发明人： Takeshi Kamikawa

IPC分类号： F21V13/08 ,  F21V7/22 ,  F21K99/00 ,  F21V7/00

CPC分类号： F21V13/08 ,  F21K9/90 ,  F21V7/0066 ,  F21V7/22 ,  F21Y2115/10 ,  H01L24/45 ,  H01L25/0753 ,  H01L33/60 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/181 ,  H01L2933/0091 ,  Y10T29/4913 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting device includes a light emitting element, a ceramic substrate including a mounting surface on which the light emitting element is mounted, and a non-mounting surface opposite to the mounting surface and on which the light emitting element is not mounted, and a metal reflection film formed on the non-mounting surface. The metal reflection film reflects light from light emitting element that has passed through the ceramic substrate.

摘要翻译： 发光装置包括发光元件，包括安装有发光元件的安装面的陶瓷基板和与安装面相对的非安装面，并且未安装发光元件， 金属反射膜形成在非安装表面上。 金属反射膜反射来自穿过陶瓷基板的发光元件的光。

公开(公告)号：US08742444B2

公开(公告)日：2014-06-03

申请号：US13572178

申请日：2012-08-10

申请人： Masataka Ohta ,  Takeshi Kamikawa

发明人： Masataka Ohta ,  Takeshi Kamikawa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/483 ,  H01L33/507 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element (1) for emitting ultraviolet light in an ultraviolet or deep ultraviolet region; a cap part (6) having a through-hole (63) in the top part through which ultraviolet light passes and encircling the semiconductor light-emitting element (1); a translucent cover (7) for transmitting ultraviolet light, the translucent cover being disposed so as to hermetically close up the through-hole (63); and a UV-excited phosphor (8) which is excited by ultraviolet light and which emits visible light, the UV-excited phosphor being disposed inside the cap part (6).

摘要翻译： 一种半导体发光装置（A），其具有简单的结构，由此可以容易且准确地确认是否发出紫外线，该半导体发光装置包括：用于发射的半导体发光元件（1） 在紫外线或深紫外线区域的紫外线; 帽部分（6），其在所述顶部部分中具有通孔（63），紫外线穿过所述通孔（63）并围绕所述半导体发光元件（1）; 用于透射紫外光的半透明盖（7），所述半透明盖设置成气密地关闭所述通孔（63）; 和紫外线激发的荧光体（8），所述紫外线激发的荧光体被紫外线激发并发出可见光，所述紫外线激发荧光体设置在所述帽部（6）的内部。

公开(公告)号：US08664688B2

公开(公告)日：2014-03-04

申请号：US12659911

申请日：2010-03-25

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/168 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/4031 ,  H01S2304/04

摘要： A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction.

摘要翻译： 氮化物半导体发光芯片由于改善的EL发射图案而提供增强的发光效率。 氮化物半导体激光器芯片（氮化物半导体发光芯片）具有主氮化物半导体衬底，其具有主生长面，氮化物半导体层在氮化物半导体衬底的主生长面上生长。 GaN衬底的主生长平面是在a轴和c轴方向上相对于m平面具有偏角的平面，并且在a轴方向上的偏离角大于偏离角度 c轴方向。