摘要:
A thin-film piezo-resonator includes a silicon substrate and a resonator assembly. The substrate is formed with a cavity or through-hole which is opened in the upper and the lower surfaces of the substrate. The resonator assembly, disposed at a location corresponding to the cavity, is composed of a first electrode contacting the upper surface of the substrate, a piezoelectric layer formed on the first electrode and a second electrode formed on the piezoelectric layer. The cavity has a side surface extending in a substantially perpendicular direction to the first surface.
摘要:
A filter element includes resonators that are arranged in series arms and parallel arms in a circuit. In this filter element, at least one of the series-arm resonators includes a plurality of single-terminal pair piezoelectric thin-film resonators connected in parallel.
摘要:
A filter chip includes multiple series-arm resonators arranged in series arms of a ladder arrangement, and multiple parallel-arm resonators arranged in parallel arms of the ladder arrangement. A common line is connected to first electrodes of at least two parallel-arm resonators among the multiple parallel-arm resonators. Second electrodes of said at least two parallel-arm resonators are connected to associated series-arm resonators among the multiple series-arm resonators.
摘要:
A film bulk acoustic resonator includes: a piezoelectric thin film that is formed on a principal surface of a substrate; and a lower electrode and an upper electrode that are arranged to sandwich the piezoelectric thin film. In this film bulk acoustic resonator, the piezoelectric thin film is made of aluminum nitride, and at least one of the lower electrode and the upper electrode contains a ruthenium or ruthenium-alloy layer.
摘要:
A film bulk acoustic resonator includes: a piezoelectric thin film that is formed on a principal surface of a substrate; and a lower electrode and an upper electrode that are arranged to sandwich the piezoelectric thin film. In this film bulk acoustic resonator, the piezoelectric thin film is made of aluminum nitride, and at least one of the lower electrode and the upper electrode contains a ruthenium or ruthenium-alloy layer.
摘要:
A piezoelectric thin-film resonator includes: a lower electrode provided on a substrate; a piezoelectric film that is provided on the lower electrode and includes at least two layers; an upper electrode that is provided on the piezoelectric film and has a region sandwiching the piezoelectric film with the lower electrode and facing the lower electrode; and an insulating film that is provided in a region in which the lower electrode and the upper electrode face each other and between each of the at least two layers, wherein an upper face of the insulating film is flatter than a lower face of the insulating film.
摘要:
In one aspect of the invention, a duplexer including a multilayer substrate with multiple stacked layers and a back surface with a rectangular shape is disclosed. An antenna terminal, a transmission terminal, a reception terminal, a ground terminal, and a conductor are provided in various positions on the multilayer substrate for improved performance.
摘要:
An electronic component includes: a multilayer ceramic substrate that has a penetration electrode formed therein, and has a passive element provided on the upper face thereof; an insulating film that is provided on the multilayer ceramic substrate, and has an opening above the penetration electrode; a first connecting terminal that is provided on the insulating film so as to cover the opening, and is electrically connected to the penetration electrode; and a second connecting terminal that is provided on a region of the insulating film other than the opening region.
摘要:
An electronic component includes: a multilayer ceramic substrate that has a penetration electrode formed therein, and has a passive element provided on the upper face thereof; an insulating film that is provided on the multilayer ceramic substrate, and has an opening above the penetration electrode; a first connecting terminal that is provided on the insulating film so as to cover the opening, and is electrically connected to the penetration electrode; and a second connecting terminal that is provided on a region of the insulating film other than the opening region.
摘要:
A duplexer includes a transmission filter and a reception filter having different passbands, wherein: first resonators that are series resonators or parallel resonators included in the transmission and reception filters so as to form a skirt characteristic at a guard band side are a temperature compensated type piezoelectric thin film resonator or a surface acoustic wave resonator using Love waves, and second resonators that form a skirt characteristic at an opposite side to the guard band are one of a temperature non-compensated type piezoelectric thin film resonator, a surface acoustic wave resonator using a lithium tantalate substrate or a substrate made by bonding a lithium tantalate substrate on a sapphire substrate, and a surface acoustic wave resonator using Love waves.