公开(公告)号：US20060060930A1

公开(公告)日：2006-03-23

申请号：US10943693

申请日：2004-09-17

申请人： Matthew Metz ,  Clifford Boyd ,  Markus Kuhn ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

发明人： Matthew Metz ,  Clifford Boyd ,  Markus Kuhn ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/7833

摘要： Gate dielectrics formed of silicates of hafnium or zirconium dioxide may be formed by atomic layer deposition. The precursors for the atomic layer deposition may include an oxidant, a silicate precursor, and a zirconium or hafnium precursor.

摘要翻译： 可以通过原子层沉积形成由铪或二氧化锆的硅酸盐形成的栅极电介质。 原子层沉积的前体可以包括氧化剂，硅酸盐前体和锆或铪前体。

公开(公告)号：US20060045968A1

公开(公告)日：2006-03-02

申请号：US10925573

申请日：2004-08-25

申请人： Matthew Metz ,  Mark Brazier ,  Timothy Glassman ,  Christopher Thomas ,  Lawrence Foley ,  Christopher Parker ,  Ying Zhou ,  Markus Kuhn ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

发明人： Matthew Metz ,  Mark Brazier ,  Timothy Glassman ,  Christopher Thomas ,  Lawrence Foley ,  Christopher Parker ,  Ying Zhou ,  Markus Kuhn ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

IPC分类号： C23C16/00

CPC分类号： C23C16/45527

摘要： Increasing the number of successive pulses of oxidant before applying pulses of metal precursor may improve the quality of the resulting metal or rare earth oxide films. These metal or rare earth oxide films may be utilized for high dielectric constant gate dielectrics. In addition, pulsing the oxidant during the pre-stabilization period may be advantageous. Also, using more pulses of oxidant than the pulses of precursor may reduce chlorine concentration in the resulting films.

摘要翻译： 在施加金属前体的脉冲之前增加氧化剂的连续脉冲数可以提高所得金属或稀土氧化物膜的质量。 这些金属或稀土氧化物膜可用于高介电常数栅极电介质。 此外，在预稳定化期间脉冲氧化剂可能是有利的。 此外，使用比前体脉冲更多的氧化剂脉冲可以降低所得膜中的氯浓度。

公开(公告)号：US20050048794A1

公开(公告)日：2005-03-03

申请号：US10652796

申请日：2003-08-28

申请人： Justin Brask ,  Mark Doczy ,  Scott Hareland ,  John Barnak ,  Matthew Metz ,  Jack Kavalieros ,  Robert Chau

发明人： Justin Brask ,  Mark Doczy ,  Scott Hareland ,  John Barnak ,  Matthew Metz ,  Jack Kavalieros ,  Robert Chau

IPC分类号： H01L21/28 ,  H01L21/30 ,  H01L21/306 ,  H01L21/316 ,  H01L29/51 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02244 ,  H01L21/02052 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/3003 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31683 ,  H01L21/31691 ,  H01L29/513 ,  H01L29/517

摘要： A method for making a semiconductor device is described. That method comprises forming a metal oxide layer on a substrate, converting at least part of the metal oxide layer to a metal layer; and oxidizing the metal layer to generate a metal oxide high-k gate dielectric layer.

公开(公告)号：US20060046448A1

公开(公告)日：2006-03-02

申请号：US10925517

申请日：2004-08-25

申请人： Chris Barns ,  Matt Prince ,  Mark Doczy ,  Justin Brask ,  Jack Kavalieros

发明人： Chris Barns ,  Matt Prince ,  Mark Doczy ,  Justin Brask ,  Jack Kavalieros

IPC分类号： H01L21/3205 ,  H01L21/8238 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/66545 ,  H01L21/28079 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/517 ,  H01L29/78

摘要： Replacement metal gates may be formed by removing a polysilicon layer from a gate structure. The gate structure may be formed by patterning the polysilicon layer and depositing a spacer layer over the gate structure such that the spacer layer has a first polish rate. The spacer layer is then etched to form a sidewall spacer. An interlayer dielectric is applied over the gate structure with the sidewall spacer. The interlayer dielectric has a second polish rate higher than the first polish rate. A hard mask may also be applied over the gate structure and implanted so that the hard mask may be more readily removed.

摘要翻译： 可以通过从栅极结构去除多晶硅层来形成替代金属栅极。 栅极结构可以通过图案化多晶硅层并在栅极结构上沉积间隔层形成，使得间隔层具有第一抛光速率。 然后对间隔层进行蚀刻以形成侧壁间隔物。 在栅极结构上用侧壁间隔物施加层间电介质。 层间电介质具有比第一抛光速率高的第二抛光速率。 硬掩模也可以施加在栅极结构上并被植入，使得硬掩模可以更容易地去除。

公开(公告)号：US20060030104A1

公开(公告)日：2006-02-09

申请号：US11248737

申请日：2005-10-11

申请人： Mark Doczy ,  Justin Brask ,  Steven Keating ,  Chris Barns ,  Brian Doyle ,  Michael McSwiney ,  Jack Kavalieros ,  John Barnak

发明人： Mark Doczy ,  Justin Brask ,  Steven Keating ,  Chris Barns ,  Brian Doyle ,  Michael McSwiney ,  Jack Kavalieros ,  John Barnak

IPC分类号： H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/7833 ,  Y10S438/926

摘要： At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.

摘要翻译： 至少p型和n型半导体器件沉积在包含金属或金属合金栅极的半导体晶片上。 更具体地，在具有n型和p型金属栅极的半导体晶片上形成互补金属氧化物半导体（CMOS）器件。

公开(公告)号：US20050040469A1

公开(公告)日：2005-02-24

申请号：US10946502

申请日：2004-09-20

申请人： Mark Doczy ,  Justin Brask ,  Steven Keating ,  Chris Barns ,  Brian Doyle ,  Michael McSwiney ,  Jack Kavalieros ,  John Barnak

发明人： Mark Doczy ,  Justin Brask ,  Steven Keating ,  Chris Barns ,  Brian Doyle ,  Michael McSwiney ,  Jack Kavalieros ,  John Barnak

IPC分类号： H01L21/3213 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/66545 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/7833 ,  Y10S438/926

摘要： At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.

摘要翻译： 至少p型和n型半导体器件沉积在包含金属或金属合金栅极的半导体晶片上。 更具体地，在具有n型和p型金属栅极的半导体晶片上形成互补金属氧化物半导体（CMOS）器件。

公开(公告)号：US20080090397A1

公开(公告)日：2008-04-17

申请号：US11986510

申请日：2007-11-21

申请人： Justin Brask ,  Brian Dovle ,  Jack Kavalleros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

发明人： Justin Brask ,  Brian Dovle ,  Jack Kavalleros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

IPC分类号： H01L21/3205

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  Y10S438/926 ,  Y10S438/974

摘要： A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.

摘要翻译： 要求保护半导体器件，该半导体器件具有形成在绝缘衬底上的具有顶表面和第一和第二横向相对侧壁的半导体本体。 在半导体本体的顶表面和半导体本体的第一和第二横向相对的侧壁上形成栅极电介质。 然后在半导体主体的顶表面上的栅电介质上形成栅电极，并且与半导体本体的第一和第二横向相对的侧壁上的栅电介质相邻。 栅电极包括直接与栅介电层相邻形成的金属膜。 然后在栅电极的相对侧上的半导体本体中形成一对源区和漏区。

公开(公告)号：US20060138553A1

公开(公告)日：2006-06-29

申请号：US11362453

申请日：2006-02-24

申请人： Justin Brask ,  Brian Doyle ,  Jack Kavalleros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

发明人： Justin Brask ,  Brian Doyle ,  Jack Kavalleros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

IPC分类号： H01L29/94

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  Y10S438/926 ,  Y10S438/974

摘要： A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.

公开(公告)号：US20070040223A1

公开(公告)日：2007-02-22

申请号：US11207051

申请日：2005-08-17

申请人： Suman Datta ,  Justin Brask ,  Jack Kavalieros ,  Brian Doyle ,  Gilbert Dewey ,  Mark Doczy ,  Robert Chau

发明人： Suman Datta ,  Justin Brask ,  Jack Kavalieros ,  Brian Doyle ,  Gilbert Dewey ,  Mark Doczy ,  Robert Chau

IPC分类号： H01L29/94

CPC分类号： H01L29/42376 ,  H01L21/28114 ,  H01L29/42384 ,  H01L29/495 ,  H01L29/517 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78654

摘要： Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer, source/drain extensions a distance beneath the metal gate, and lateral undercuts in the sides of the metal gate.

摘要翻译： 本发明的实施例提供一种具有金属栅极，高k栅极电介质层，金属栅极下方距离的源极/漏极延伸部以及金属栅极侧面中的横向底切的器件。

公开(公告)号：US20060284271A1

公开(公告)日：2006-12-21

申请号：US11158621

申请日：2005-06-21

申请人： Brian Doyle ,  Jack Kavalieros ,  Justin Brask ,  Matthew Mertz ,  Mark Doczy ,  Suman Datta ,  Robert Chau

发明人： Brian Doyle ,  Jack Kavalieros ,  Justin Brask ,  Matthew Mertz ,  Mark Doczy ,  Suman Datta ,  Robert Chau

IPC分类号： H01L29/94

CPC分类号： H01L29/4983 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/28247 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/66628

摘要： Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer and reduced oxidation of a substrate beneath the high-k gate dielectric layer. An oxygen barrier, or capping, layer on the high-k gate dielectric layer and metal gate may prevent such oxidation during processes such as spacer formation and annealing of ion implanted regions.