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    ELECTRODE PATTERN AND WIRE BONDING METHOD
    82.
    发明申请
    ELECTRODE PATTERN AND WIRE BONDING METHOD 有权
    电极图案和线焊接方法

    公开(公告)号：US20080230255A1

    公开(公告)日：2008-09-25

    申请号：US12042650

    申请日：2008-03-05

    申请人： Yoshihiro Hisa ,  Tsutomu Yamaguchi ,  Hideyuki Tanaka ,  Kazunori Matsuo

    发明人： Yoshihiro Hisa ,  Tsutomu Yamaguchi ,  Hideyuki Tanaka ,  Kazunori Matsuo

    IPC分类号： H01R43/00 ,  H01B5/00

    CPC分类号： H01R43/0221 ,  H01L2924/01074 ,  H01L2924/01079 ,  Y10T29/49218

    摘要： An electrode pattern for wire-bonding includes: a wire-bonding reference pattern indicating a reference position for determination of a wire-bonding position; and a wire-bonding recognition pattern. The distance between the reference position and a wire-bonding metal portion bonded to the electrode pattern and the distance between the wire-bonding recognition pattern and the wire-bonding metal portion satisfy predetermined relationships.

    摘要翻译： 用于引线接合的电极图案包括：指示用于确定引线接合位置的基准位置的引线接合基准图; 和引线键合识别图案。 接合到电极图案的基准位置与引线键合金属部分之间的距离以及引线接合识别图案和引线接合金属部分之间的距离满足预定关系。

    Manufacturing method of nitride semiconductor device and nitride semiconductor device
    83.
    发明授权
    Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
    氮化物半导体器件和氮化物半导体器件的制造方法

    公开(公告)号：US07405096B2

    公开(公告)日：2008-07-29

    申请号：US11080398

    申请日：2005-03-16

    申请人： Takashi Kano ,  Tsutomu Yamaguchi ,  Hiroaki Izu ,  Masayuki Hata ,  Yasuhiko Nomura

    发明人： Takashi Kano ,  Tsutomu Yamaguchi ,  Hiroaki Izu ,  Masayuki Hata ,  Yasuhiko Nomura

    IPC分类号： H01L21/00 ,  H01L29/20

    CPC分类号： H01L21/0243 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0075 ,  H01L33/025

    摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.

    摘要翻译： 提供了一种氮化物半导体器件的制造方法，其具有氮化物半导体衬底（例如GaN衬底），其中位错集中区域在条带形成中对准，位错集中区域从衬底的前表面延伸到后表面，制造方法 用于以恒定的膜厚堆叠在基板的前表面上的多个氮化物半导体层中的每一个。 在位错集中区域的紧邻区域上的氮化物半导体衬底上形成沟槽。 每个氮化物半导体层在形成有凹槽的氮化物半导体衬底的主表面上形成为晶体生长层。

    Waterproof structure
    85.
    发明申请
    Waterproof structure 有权
    防水结构

    公开(公告)号：US20080081679A1

    公开(公告)日：2008-04-03

    申请号：US11900228

    申请日：2007-09-10

    申请人： Yasuhiko Kawasaki ,  Takeru Baba ,  Toshiyuki Murakami ,  Shigeru Kato ,  Tsutomu Yamaguchi

    发明人： Yasuhiko Kawasaki ,  Takeru Baba ,  Toshiyuki Murakami ,  Shigeru Kato ,  Tsutomu Yamaguchi

    IPC分类号： H04M1/00

    CPC分类号： H04M1/18 ,  H04B1/3888 ,  H04M1/0249

    摘要： A waterproof structure for a casing has a first casing, a second casing to be put together with the first casing, and a waterproof member formed of an elastic material to prevent water from penetrating between the first casing and the second casing. The second casing has a recess. The waterproof member has a peripheral part which, when fitted into the recess, prevents penetration of water. The peripheral part is provided at the periphery of the waterproof member, which is laid out all around space between the first casing and the second casing. A projection engages with a dent. A restriction part of the first casing, provided at a position facing the peripheral part and protruding toward the second casing, prevents the peripheral part from coming out.

    摘要翻译： 用于壳体的防水结构具有第一壳体，与第一壳体放在一起的第二壳体和由弹性材料形成的防水构件，以防止水在第一壳体和第二壳体之间穿透。 第二壳体具有凹部。 防水构件具有周边部，该周边部在嵌入凹部时防止水的渗透。 外围部分设置在防水构件的周围，其布置在第一壳体和第二壳体之间的整个空间周围。 一个突起与一个凹痕啮合。 第一壳体的限制部分设置在面向周边部分并朝向第二壳体突出的位置，防止周边部件脱出。

    Key for keyboard-based musical instruments
    88.
    发明申请
    Key for keyboard-based musical instruments 有权
    键盘乐器的关键

    公开(公告)号：US20070137461A1

    公开(公告)日：2007-06-21

    申请号：US10591494

    申请日：2005-02-17

    申请人： Tsutomu Yamaguchi

    发明人： Tsutomu Yamaguchi

    IPC分类号： G10C3/12

    CPC分类号： G10C3/125

    摘要： A key for keyboard-based musical instrument is provided for ensuring high hydrophilia and thereby ensuring higher playing performance. A key 1 for an electronic piano 2 comprises a key body 10 made of an ABS resin, and a thin plate-shaped key touch member 11 adhered on the top surface of the key body 10. The key touch member 11 comprises a base 11b made of an ABS resin, and a hydrophilic polymer 11a added in the base 11b in a dispersed manner. While a player is playing a keyboard-based musical instrument, sweat at the tip of his/her finger is absorbed by the hydrophilic polymer 11a.

    摘要翻译： 提供了基于键盘的乐器的关键，用于确保高亲水度，从而确保更高的播放性能。 电子钢琴2的键1包括由ABS树脂制成的键体10和粘附在键体10顶表面上的薄板形键触式构件11。 键接触构件11包括由ABS树脂制成的基部11b和分散在基底11b中的亲水性聚合物11a。 当玩家正在玩基于键盘的乐器时，他/她的手指的尖端的汗水被亲水性聚合物11a吸收。

    Electronic device
    89.
    发明授权
    Electronic device 失效
    电子设备

    公开(公告)号：US07224307B2

    公开(公告)日：2007-05-29

    申请号：US10204867

    申请日：2001-12-25

    申请人： Toshiyuki Hisatsune ,  Tsutomu Yamaguchi ,  Hirokazu Okabe ,  Yutaka Sato

    发明人： Toshiyuki Hisatsune ,  Tsutomu Yamaguchi ,  Hirokazu Okabe ,  Yutaka Sato

    IPC分类号： G08C17/00

    CPC分类号： H01H9/0235 ,  H01H2217/032 ,  H01H2219/036 ,  H01H2219/044 ,  H01H2219/052 ,  H01H2223/038

    摘要： Electronic equipment includes an operation mechanism having a plurality of key buttons for inputting operations into the device by the user and a base member connecting the plurality of key buttons, both formed of a luminescent material, and a panel placed above the operation mechanism that is formed from a member which can transmit light emitted by the operation mechanism. A plurality of holes are provided to enable operation of the plurality of key buttons and to enable the user to judge the positions and functions of the key buttons for operation even in darkness.

    摘要翻译： 电子设备包括操作机构，该操作机构具有多个按键，用于将使用者的操作输入到装置中;以及基座构件，连接由发光材料形成的多个键按钮，以及位于形成的操作机构上方的面板 来自可以传输由操作机构发出的光的构件。 提供多个孔以使得能够操作多个按键，并且使得用户能够判断即使在黑暗中操作的按键的位置和功能。

    Semiconductor laser apparatus and fabrication method thereof
    90.
    发明申请
    Semiconductor laser apparatus and fabrication method thereof 有权
    半导体激光装置及其制造方法

    公开(公告)号：US20050220159A1

    公开(公告)日：2005-10-06

    申请号：US11092947

    申请日：2005-03-30

    申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

    发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

    IPC分类号： H01S5/40 ,  H01L29/00 ,  H01S5/022

    CPC分类号： H01S5/4025 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/4087

    摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.

    摘要翻译： 蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。 红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。 红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。 在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。 两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。 这导致第一p电极的一部分被暴露。 蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。