公开(公告)号：US06623563B2

公开(公告)日：2003-09-23

申请号：US09753149

申请日：2001-01-02

申请人： Akihiro Hosokawa

发明人： Akihiro Hosokawa

IPC分类号： C23C1600

CPC分类号： C23C16/4583 ,  C23C16/4581

摘要： In accordance with a first aspect, a susceptor is provided that includes (1) a supporting surface adapted to support a substrate, the supporting surface comprising a first material; and (2) a support frame encased within the first material, the support frame comprising a second material that has a lower coefficient of thermal expansion than the first material. The support frame is offset from a center of the susceptor toward the supporting surface. In accordance with a second aspect, a susceptor is provided that includes (1) a supporting surface adapted to support a substrate, the supporting surface comprising a first material; and (2) a support frame encased within the first material, the support frame comprising a second material that has a higher coefficient of thermal expansion than the first material. The support frame is offset from a center of the susceptor away from the supporting surface. Other aspects are also provided.

公开(公告)号：US5716133A

公开(公告)日：1998-02-10

申请号：US373401

申请日：1995-01-17

申请人： Akihiro Hosokawa ,  Masahiko Kowaka

发明人： Akihiro Hosokawa ,  Masahiko Kowaka

IPC分类号： G01J5/02 ,  G01J5/00 ,  G01J5/06 ,  H01L21/02

CPC分类号： G01J5/06

摘要： A sensor for measuring the temperature of a workpiece including a substrate, wafer, shield or other element in a semiconductor processing system. In the illustrated embodiment, the sensor has a heat shield to reflect away from the heat sensing element, heat from unwanted sources such as susceptors and heating cartridges which can adversely affect the accuracy of the measurement. In addition, the heat shield preferably has a small thermal mass for improved responsivity.

摘要翻译： 一种用于在半导体处理系统中测量包括衬底，晶片，屏蔽或其它元件的工件的温度的传感器。 在所示实施例中，传感器具有隔热件以反射远离热敏元件，来自诸如感受器和加热盒的不想要的源的热量，这可能不利地影响测量精度。 此外，隔热板优选具有小的热质量以改善响应性。

公开(公告)号：US08875547B2

公开(公告)日：2014-11-04

申请号：US12087520

申请日：2006-12-19

申请人： Masami Suzuki ,  Akihiro Hosokawa

发明人： Masami Suzuki ,  Akihiro Hosokawa

IPC分类号： D06F39/08 ,  C01B13/11 ,  D06F35/00 ,  C02F1/78 ,  C02F103/00

CPC分类号： C01B13/115 ,  C01B2201/22 ,  C01B2201/62 ,  C02F1/78 ,  C02F2103/002 ,  C02F2201/782 ,  D06F35/001

摘要： Provided is an ozone generator (47) including two sheets of ozone generating electrodes (156, 157). These two ozone generating electrodes (156, 157) are arranged in a treating passage (152) in series along an air flowing direction. Thus, the air to come in from an air inlet port flows at first along the ozone generating electrode (156) of the first sheet, and receives, while flowing, the creeping discharge of the first ozone generating electrode (156) thereby to generate the ozone. The air thus having generated the ozone further flows in the treating passage (152) to the ozone generating electrode (157) of the second sheet, and receives, while flowing, the creeping discharge of the second ozone generating electrode (157) thereby to generate the additional ozone. The highly dense ozone can be used to clean the washing water.

摘要翻译： 提供了包括两片臭氧发生电极（156,157）的臭氧发生器（47）。 这两个臭氧发生电极（156,157）沿着空气流动方向排列在处理通道（152）中。 因此，从空气导入口进入的空气首先沿着第一片的臭氧发生电极（156）流动，并且在流动的同时接收第一臭氧发生电极（156）的蠕变放电从而产生 臭氧。 产生臭氧的空气进一步在处理通路152中流到第二片的臭氧发生电极157，并且在流动时接收第二臭氧发生电极157的蠕变放电从而产生 额外的臭氧。 高密度臭氧可用于清洗洗涤水。

公开(公告)号：US08500975B2

公开(公告)日：2013-08-06

申请号：US11484333

申请日：2006-07-11

申请人： Hien Minh Huu Le ,  Akihiro Hosokawa ,  Avi Tepman

发明人： Hien Minh Huu Le ,  Akihiro Hosokawa ,  Avi Tepman

IPC分类号： C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/00

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A rectangular magnetron placed at the back of a rectangular sputtering target for coating a rectangular panel and having magnets of opposed polarities arranged to form a gap therebetween corresponding to a plasma track adjacent the target which extends in a closed serpentine or spiral loop. The spiral may have a large number of wraps and the closed loop may be folded before wrapping. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target corresponding to at least the separation of the gap between parallel portions of the loop. A central ferromagnetic shim beneath some magnets in the loop may compensate for vertical droop. The magnetron may be scanned in two alternating double-Z patterns rotated 90° between them.

摘要翻译： 放置在矩形溅射靶的背面的矩形磁控管，用于涂覆矩形面板并且具有相对极性的磁体，所述磁体布置成在对应于邻近靶的等离子体轨道之间形成间隙，所述等离子体轨道以闭合的蛇形或螺旋形环路延伸。 螺旋可以具有大量的包装，并且闭合的环可以在包装之前折叠。 磁控管的尺寸仅稍低于目标的尺寸，并且在目标的两个垂直方向上扫描，对于对应于至少间隙间隔的2m靶的扫描长度例如为约100mm 在环路的平行部分之间。 环路中一些磁铁下方的中心铁磁垫片可以补偿垂直下垂。 磁控管可以以它们之间旋转90°的两个交替的双Z图案进行扫描。

公开(公告)号：US20120024693A1

公开(公告)日：2012-02-02

申请号：US13270058

申请日：2011-10-10

申请人： John M. White ,  Yan Ye ,  Akihiro Hosokawa

发明人： John M. White ,  Yan Ye ,  Akihiro Hosokawa

IPC分类号： C23C14/24

CPC分类号： C23C14/0063 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34

摘要： A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.

摘要翻译： 提供了一种用于处理大面积基板的溅射装置。 通过在整个靶表面上引入气体，可以在衬底上形成均匀的组成膜。 当气体仅在周边引入时，气体分布不均匀。 通过在处理区域内设置气体导入管，反应气体将均匀地分布到整个靶材上。 此外，为气体管提供多个内管提供了快速有效的气体分散能力。

公开(公告)号：US20100107672A1

公开(公告)日：2010-05-06

申请号：US12691612

申请日：2010-01-21

申请人： Shinichi Kurita ,  Wendell T. Blonigan ,  Akihiro Hosokawa

发明人： Shinichi Kurita ,  Wendell T. Blonigan ,  Akihiro Hosokawa

IPC分类号： H01L21/677 ,  H01L23/34 ,  F25D23/12

CPC分类号： H01L21/68742 ,  B65G49/068 ,  B65G2249/02 ,  B65G2249/04 ,  C23C14/566 ,  C23C14/568 ,  C23C16/54 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67739 ,  H01L21/67745 ,  H01L21/67748

摘要： One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as well as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

摘要翻译： 一个实施例涉及一种其中具有第一支撑结构的负载锁，用于支撑一个未处理的基板和其中的第二支撑结构以支撑一个处理的基板。 第一支撑结构位于第二支撑结构的上方。 负载锁包括用于控制支撑结构的垂直位置的电梯。 负载锁还包括第一孔，以允许将未处理的衬底插入到装载锁中并从加载锁中移除经处理的衬底，以及第二孔，以允许将未处理的衬底从负载锁上移除并将经处理的衬底插入 负载锁。 一个冷却板也位于负载锁中。 冷却板包括适于在其上支撑经处理的基板的表面。 加热装置可以位于第一支撑结构上方的装载锁中。

公开(公告)号：US07550055B2

公开(公告)日：2009-06-23

申请号：US11224221

申请日：2005-09-12

申请人： Hienminh H. Le ,  Akihiro Hosokawa

发明人： Hienminh H. Le ,  Akihiro Hosokawa

IPC分类号： B32B15/00

CPC分类号： C23C14/3407

摘要： Embodiments of the present invention generally relate to sputtering targets used in semiconductor manufacturing. In particular, the invention relates to bonding the sputtering target to a backing plate that supports the sputtering target in a deposition chamber. In one embodiment, a method of bonding at least one sputtering target tile to a backing plate comprises providing an elastomeric adhesive layer between the at least one sputtering target tile and the backing plate, and providing at least one metal mesh within the elastomeric adhesive layer, wherein at least a portion of the at least one metal mesh contacts both the at least one sputtering target tile and the backing plate, and the at least a portion of the at least one metal mesh is made of metal wire with diameter greater than 0.5 mm.

摘要翻译： 本发明的实施方案一般涉及用于半导体制造的溅射靶。 特别地，本发明涉及将溅射靶结合到在沉积室中支撑溅射靶的背板。 在一个实施例中，将至少一个溅射靶瓦贴合到背板的方法包括在所述至少一个溅射靶瓦与所述背板之间提供弹性体粘合剂层，以及在所述弹性粘合剂层内提供至少一个金属网， 其中所述至少一个金属网的至少一部分接触所述至少一个溅射靶瓦和所述背板两者，并且所述至少一个金属网的所述至少一部分由直径大于0.5mm的金属线制成 。

公开(公告)号：US07505832B2

公开(公告)日：2009-03-17

申请号：US10802363

申请日：2004-03-16

申请人： Dongchoon Suh ,  Akihiro Hosokawa ,  Hung The Nguyen

发明人： Dongchoon Suh ,  Akihiro Hosokawa ,  Hung The Nguyen

IPC分类号： G05B15/00 ,  G05B19/00

CPC分类号： H01L21/67259 ,  H01L21/67248 ,  H01L21/67745

摘要： Embodiments of a method and apparatus for determining a substrate exchange position in a processing system are provided. In one embodiment, a method of determining a substrate exchange position in a processing system includes determining an initial exchange position within a processing chamber, and resolving a change in the exchange position. The step of resolving may further include the step of sensing a change in temperature of a facet of a transfer chamber having the processing chamber coupled thereto, sensing a change in a state of the system, or sensing a change in position of the processing chamber, among others.

摘要翻译： 提供了一种用于确定处理系统中的基板交换位置的方法和装置的实施例。 在一个实施例中，确定处理系统中的基板交换位置的方法包括确定处理室内的初始交换位置，以及解决交换位置的变化。 分辨步骤可进一步包括检测具有与其耦合的处理室的传送室的面的温度变化的步骤，感测系统的状态的变化或感测处理室的位置的改变， 等等

公开(公告)号：US20070056845A1

公开(公告)日：2007-03-15

申请号：US11399122

申请日：2006-04-06

申请人： Yan Ye ,  John White ,  Akihiro Hosokawa ,  Hien Le ,  Elpidio Nisperos ,  Bradley Stimson

发明人： Yan Ye ,  John White ,  Akihiro Hosokawa ,  Hien Le ,  Elpidio Nisperos ,  Bradley Stimson

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/3407 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3438 ,  H01J37/3441

摘要： The present invention generally provides a sputtering apparatus and method in which a sputtering target has a plurality of target sections bonded to a common backing plate. Each segment can be bonded to the common backing plate using a different bonding material. One target segment can be bonded to the backing plate using electrically conductive bonding material while another section is bonded to the backing plate using electrically insulating bonding material. Additionally, each different target section can be separately biased.

摘要翻译： 本发明通常提供一种溅射装置和方法，其中溅射靶具有多个目标部分结合到共同的背板上。 可以使用不同的接合材料将每个段结合到公共背板上。 可以使用导电接合材料将一个目标段结合到背板上，而使用电绝缘接合材料将另一部分结合到背板上。 此外，每个不同的目标部分可以单独偏置。

公开(公告)号：US20070051617A1

公开(公告)日：2007-03-08

申请号：US11301849

申请日：2005-12-12

申请人： John White ,  Hien-Minh Le ,  Akihiro Hosokawa

发明人： John White ,  Hien-Minh Le ,  Akihiro Hosokawa

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01J37/3408 ,  H01J37/3455

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in a PVD chamber that has a magnetron assembly whose shape can be distorted to adjust the magnetic field strength in the processing region of the deposition chamber to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more magnetron regions and magnetron actuators that are used to increase and more evenly distribute the magnetic field strength throughout the processing region of the processing chamber during processing.

摘要翻译： 本发明总体上提供了一种用于处理PVD室中的基板的表面的装置和方法，该PVD腔具有可以变形形状的磁控管组件，以调节沉积室的处理区域中的磁场强度，以提高沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个磁控管区域和磁控管致动器，其用于在处理期间增加并均匀地分布整个处理室的处理区域的磁场强度。