公开(公告)号：US20100012180A1

公开(公告)日：2010-01-21

申请号：US12444875

申请日：2007-10-11

Applicant: Stephen Day ,  Thomas Heinz-Helmut Altebaeumer ,  Jonathan Heffernan

Inventor： Stephen Day ,  Thomas Heinz-Helmut Altebaeumer ,  Jonathan Heffernan

IPC: H01L31/0203 ,  B29B13/00 ,  B32B3/20

CPC classification number: H01L29/78696 ,  B81C99/008 ,  B81C2201/0191 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L21/02664 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/66409 ,  H01L29/868 ,  H01L33/20 ,  H01L33/54 ,  Y10T428/24744

Abstract: A method of encapsulating low dimensional structures comprises forming a first group (3a) of low dimensional structures (1) and a second group (3b) of low dimensional structures (1) on a first substrate. The first group (3a) of low dimensional structures (1) and the second group (3b) of low dimensional structures (1) are encapsulated in a matrix (5), with the first group (3a) of low dimensional structures (1) being encapsulated separately from the second group (3b) of low dimensional structures (1). After encapsulation, the first group (3a) of low dimensional structures (1) may be separated from the second group (3b) of low dimensional structures (1). Each group may then be processed, for example by transfer to a second substrate (7). The number of low dimensional structures in a group, and the aspect ratio of a group is defined when the low dimensional structures are formed, and can therefore be controlled more accurately than in a conventional method in which groups are defined using a patterning technique.

Abstract translation: 封装低维度结构的方法包括在第一衬底上形成低维度结构（1）的第一组（3a）和低维度结构（1）的第二组（3b）。 低维度结构（1）的第一组（3a）和低维度结构（1）的第二组（3b）被封装在矩阵（5）中，第一组（3a）为低维度结构（1） 与低维度结构（1）的第二组（3b）分开封装。 在封装之后，低维度结构（1）的第一组（3a）可以与低维度结构（1）的第二组（3b）分离。 然后可以例如通过转移到第二衬底（7）来处理每个组。 当形成低维度结构时，定义组中的低维度结构的数量和组的纵横比，并且因此可以比使用图案化技术定义组的常规方法更精确地控制组的纵横比。

公开(公告)号：US20090298259A1

公开(公告)日：2009-12-03

申请号：US12232627

申请日：2008-09-22

Applicant: Ching-Fuh Ling ,  Shu-Chia Shiu ,  Chieh-Yu Hsiao ,  Meng-Yueh Liu

Inventor： Ching-Fuh Ling ,  Shu-Chia Shiu ,  Chieh-Yu Hsiao ,  Meng-Yueh Liu

IPC: H01L21/30

CPC classification number: B81C1/00111 ,  B81B2207/056 ,  B81C2201/0191

Abstract: As the conventional nanowire technology has many restrictions, the present invention discloses a method for transferring a one-dimensional micro/nanostructure to diversify the fabrication and application of nanocomponents, wherein a micro/nanostructure having formed on one substrate can be arbitrarily transferred to another substrate, whereby a micro/nanostructure can be integrated with different substrates.

Abstract translation: 由于传统的纳米线技术具有许多限制，本发明公开了一种用于转移一维微/纳米结构以使纳米组分的制造和应用多样化的方法，其中形成在一个衬底上的微/纳米结构可以任意转移到另一衬底 ，由此可以将微/纳米结构与不同的基底结合。

公开(公告)号：US07534641B2

公开(公告)日：2009-05-19

申请号：US11238855

申请日：2005-09-29

Applicant: Dan W. Chilcott

Inventor： Dan W. Chilcott

IPC: H01L21/00

CPC classification number: B81C1/00666 ,  B81B2203/0127 ,  B81C1/00246 ,  B81C2201/0191 ,  B81C2203/0728

Abstract: A technique for manufacturing a micro-electro-mechanical (MEM) device includes a number of steps. Initially, a first wafer is provided. Next, a bonding layer is formed on a first surface of the first wafer. Then, a portion of the bonding layer is removed to provide a cavity including a plurality of spaced support pedestals within the cavity. Next, a second wafer is bonded to at least a portion of the bonding layer. A portion of the second wafer provides a diaphragm over the cavity and the support pedestals support the diaphragm during processing. The second wafer is then etched to release the diaphragm from the support pedestals.

Abstract translation: 微机电（MEM）装置的制造技术包括多个步骤。 首先，提供第一晶片。 接下来，在第一晶片的第一表面上形成接合层。 然后，去除接合层的一部分以提供在空腔内包括多个间隔开的支撑基座的空腔。 接下来，将第二晶片接合到粘合层的至少一部分。 第二晶片的一部分在空腔上提供隔膜，并且支撑基座在处理期间支撑隔膜。 然后蚀刻第二晶片以从支撑基座释放隔膜。

公开(公告)号：US07410887B2

公开(公告)日：2008-08-12

申请号：US11627920

申请日：2007-01-26

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US07371660B2

公开(公告)日：2008-05-13

申请号：US11281042

申请日：2005-11-16

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US07268081B2

公开(公告)日：2007-09-11

申请号：US10678359

申请日：2003-10-02

Applicant: Eui-Hyeok Yang

Inventor： Eui-Hyeok Yang

IPC: H01L21/302

CPC classification number: B81C3/001 ,  B81B2203/0127 ,  B81B2203/0361 ,  B81C1/00357 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/038 ,  H01L21/2007 ,  H01L21/76251 ,  Y10S438/928 ,  Y10S438/968

Abstract: Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices. In one implementation, a carrier wafer is fabricated to include a membrane on one side of the carrier wafer. The membrane on the carrier wafer is then bond to a surface of a different, device wafer by a plurality of joints. Next, the carrier wafer is etched away by a dry etching chemical to expose the membrane and to leave said membrane on the device wafer. Transfer of membranes with a wet etching process is also described.

Abstract translation: 将膜从一个晶片转移到另一个晶片以形成集成的半导体器件的技术。 在一个实施方式中，制造载体晶片以在载体晶片的一侧包括膜。 然后通过多个接头将载体晶片上的膜结合到不同的器件晶片的表面。 接下来，通过干蚀刻化学品蚀刻载体晶片以暴露膜并将所述膜留在器件晶片上。 还描述了用湿蚀刻工艺转移膜。

公开(公告)号：US20070148588A1

公开(公告)日：2007-06-28

申请号：US11613629

申请日：2006-12-20

Applicant: Chin-sung PARK ,  Kyu-youn HWANG ,  Jin-tae KIM ,  Young-sun LEE

Inventor： Chin-sung PARK ,  Kyu-youn HWANG ,  Jin-tae KIM ,  Young-sun LEE

IPC: G03C1/00

CPC classification number: G03F7/165 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C1/00071 ,  B81C2201/0191 ,  B82Y30/00 ,  G03F7/11 ,  G03F7/161 ,  G03F7/40

Abstract: Disclosed herein is a method of releasing a photoresist film from a substrate, which includes forming a self-assembled monolayer (SAM) on a substrate; coating the SAM with a photoresist film; and rinsing the substrate with an alcohol or an acid. According to the photoresist film releasing method, a photoresist film can be easily released from a substrate without damage after patterning. A method of bonding a released photoresist film with a substrate includes arraying a second substrate and the photoresist film released from a first substrate, and baking the second substrate. According to the bonding method, the photoresist film can be perfectly bonded with a second substrate without generating a crevice even though an additional adhesive is not used.

Abstract translation: 本文公开了一种从衬底上释放光致抗蚀剂膜的方法，其包括在衬底上形成自组装单层（SAM）; 用光致抗蚀剂膜涂覆SAM; 并用醇或酸冲洗底物。 根据光致抗蚀剂膜的释放方法，在图案化之后，光致抗蚀剂膜可以容易地从衬底上释放而不损坏。 将释放的光致抗蚀剂膜与基板接合的方法包括排列第二基板和从第一基板释放的光致抗蚀剂膜，并烘烤第二基板。 根据接合方法，即使没有使用另外的粘合剂，也可以使光致抗蚀剂膜与第二基板完全粘合而不产生缝隙。

公开(公告)号：US07160790B2

公开(公告)日：2007-01-09

申请号：US10644644

申请日：2003-08-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US07145214B2

公开(公告)日：2006-12-05

申请号：US11287371

申请日：2005-11-28

Applicant: Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

Inventor： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

IPC: H01L29/00

CPC classification number: H01L21/187 ,  B81C1/00365 ,  B81C2201/0191 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76254

Abstract: A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

公开(公告)号：US20060079070A1

公开(公告)日：2006-04-13

申请号：US11287379

申请日：2005-11-28

Applicant: Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

Inventor： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

IPC: H01L21/30

CPC classification number: H01L21/187 ,  B81C1/00365 ,  B81C2201/0191 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76254

Abstract: A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.