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公开(公告)号:US12024466B2
公开(公告)日:2024-07-02
申请号:US17922096
申请日:2021-04-30
Applicant: SUMITOMO METAL MINING CO., LTD.
Inventor: Masaki Ando
CPC classification number: C03C4/14 , C03C8/10 , C03C8/16 , H01C7/003 , C03C2204/00 , C03C2205/00
Abstract: To provide a thick film resistor paste for a resistor having a smaller resistance change rate and excellent surge resistance, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises an organic vehicle and a conductive substance-containing glass powder comprising ruthenium oxide and lead ruthenate, the conductive substance-containing glass powder comprises 10 to 70 mass % of conductive substances, a glass composition of the conductive substance-containing glass powder comprises 3 to 30 mass % of silicon oxide. 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.
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公开(公告)号:US11967443B2
公开(公告)日:2024-04-23
申请号:US17959641
申请日:2022-10-04
Applicant: KOA CORPORATION
Inventor: Taro Kimura
Abstract: A chip resistor includes: an insulating substrate; a pair of front electrodes; a resistor connecting between both the front electrodes; an undercoat layer provided on the resistor; an overcoat layer provided on the undercoat layer, an auxiliary film provided so as to be over a connecting portion between the front electrode and the resistor at a position away from an end face of the insulating substrate; a pair of end face electrodes; and a pair of external plating layers covering the end face electrodes, the front electrodes, and the auxiliary film, wherein the auxiliary film is formed of a resin material containing metal particles, and a portion of the auxiliary film is sandwiched between the undercoat layer and the overcoat layer.
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公开(公告)号:US20240096926A1
公开(公告)日:2024-03-21
申请号:US18276215
申请日:2022-02-24
Applicant: KOA CORPORATION
Inventor: Yasushi AKAHANE
Abstract: Provided is a mounting structure for a chip component having high thermal shock resistance. In amounting structure for a chip resistor 1 according to the present invention, a separation distance L1 between a pair of back surface electrodes 3 formed on an insulating substrate 2 of a chip resistor 20 is set to be shorter than a separation distance L2 between a pair of lands 31 provided on a circuit board 30. Each of the back surface electrodes 3 is formed with a thick portion (first electrode portion 3a), and an external electrode 9 deposited on the back surface electrode 3 is connected on the corresponding land 31 via solder 32 with a top portion of the thick portion made positioned directly above an inner end of the land 31.
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公开(公告)号:US11862365B2
公开(公告)日:2024-01-02
申请号:US17743766
申请日:2022-05-13
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor: Jang Suk Yoon , Hyung Min Kim
Abstract: A resistor component includes a substrate having a first surface and a second surface, opposing each other; an external electrode disposed outside of the substrate; a resistive layer disposed on the first surface of the substrate, connected to the external electrode, and including an alloy of a first metal and a second metal; and a first protective layer disposed on the resistive layer and including any one of the first and second metals.
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公开(公告)号:US11830641B2
公开(公告)日:2023-11-28
申请号:US17545270
申请日:2021-12-08
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor: Ah Ra Cho , Kwang Hyun Park
Abstract: A chip resistor component, includes: a substrate having one surface, and one side surface and the other side surface facing each other in one direction; an terminal including an internal electrode disposed on the one surface, and an external electrode disposed on the one side surface to be connected to the internal electrode; a resistive layer disposed on the one surface, and including an outermost pattern connected to the internal electrode; and a protective layer disposed on the one surface to cover the resistive layer. The outermost pattern of the resistive layer has a first region in contact with the internal electrode and a second region extending, in the one direction, from the first region towards the other side surface. A ratio of a length of the second region in the one direction to a length of the chip resistor component in the one direction is 0.02 or more.
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公开(公告)号:US11688533B2
公开(公告)日:2023-06-27
申请号:US17517144
申请日:2021-11-02
Applicant: Cyntec Co., Ltd.
Inventor: Hsiu-Yu Chang , Chao-Ting Lin
Abstract: A chip resistor structure includes a substrate; a pair of first electrodes disposed opposite to each other on a first surface of the substrate at a first interval; a resistance layer disposed between the pair of first electrodes on the first surface; a spacer layer made of a material having a composition different from that of the resistance layer, disposed over the pair of first electrodes; a protective layer overlying the resistance layer; and a plating layer electroplated onto the pair of first electrodes and the spacer layer, and having ends extending beyond the pair of first electrodes terminate at least over the spacer layer. The plating layer may be joined with or spaced from or climb up to the protective layer on or above the spacer layer.
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公开(公告)号:US20190245030A1
公开(公告)日:2019-08-08
申请号:US16389225
申请日:2019-04-19
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor: Doo Ho YOO , Jung Il KIM , Young Key KIM , Jung Min NAM
CPC classification number: H01L28/20 , H01C1/01 , H01C1/142 , H01C7/00 , H01C7/003 , H01C17/006 , H01L23/10 , H01L23/3114 , H05K1/167 , H05K3/3431 , H05K2201/10022
Abstract: A chip resistor includes a base substrate having a first surface and a second surface opposing each other, two side surfaces connecting the first surface and the second surface, and two end surfaces connecting the first surface and the second surface, a resistive layer disposed on the second surface of the base substrate, the resistive layer having a first surface in contact with the base substrate and a second surface opposing the first surface of the resistive layer, a first terminal and a second terminal spaced apart from each other and each being connected to the resistive layer on the second surface of the resistive layer, and a third terminal connected to the resistive layer on the second surface of the resistive layer, disposed between the first terminal and the second terminal, and extending to the first surface of the base substrate along the side surfaces.
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公开(公告)号:US20180137957A1
公开(公告)日:2018-05-17
申请号:US15634305
申请日:2017-06-27
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor: Woo Jin CHOI
CPC classification number: H01C7/003 , H01C1/142 , H01C17/006 , H01C17/245 , H01C17/281 , H05K1/111 , H05K1/181 , H05K3/3442 , H05K2201/10022 , Y02P70/611
Abstract: A chip resistor includes a base substrate having first and second surfaces opposing each other. First and second resistor layers are separated from each other and are on the first surface of the base substrate. First and second terminals are on opposing end portions of the base substrate, respectively, and are connected to first sides of the first and second resistor layers, respectively. Third and fourth terminals are between the first and second terminals, and are respectively connected to second sides of the first and second resistor layers that respectively oppose the first sides of the first and second resistor layers.
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公开(公告)号:US09905928B2
公开(公告)日:2018-02-27
申请号:US14268082
申请日:2014-05-02
Applicant: L. Pierre de Rochemont
Inventor: L. Pierre de Rochemont
IPC: H01Q15/02 , H01Q9/04 , B82Y30/00 , H01C7/00 , H01C17/00 , H01C17/065 , H01G4/10 , H01G4/33 , H01Q1/22 , H01Q1/38 , H01Q15/00 , H01L23/64 , H01L23/498 , H05K1/02 , H05K1/09 , H05K1/16 , H05K3/20
CPC classification number: H01Q9/0414 , B82Y30/00 , C04B2235/768 , C04B2235/781 , H01C7/003 , H01C17/003 , H01C17/06533 , H01G4/10 , H01G4/1209 , H01G4/33 , H01L23/49822 , H01L23/642 , H01L23/647 , H01L2224/16 , H01L2224/16225 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01037 , H01L2924/01057 , H01L2924/01067 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/3011 , H01L2924/3025 , H01Q1/2283 , H01Q1/38 , H01Q15/0086 , H05K1/0298 , H05K1/092 , H05K1/16 , H05K1/162 , H05K1/165 , H05K1/167 , H05K3/207 , H05K2201/017 , H05K2201/0175 , H05K2201/09763 , H05K2203/016 , H05K2203/0338 , H05K2203/121 , Y10T428/12493
Abstract: An electrical component provides a ceramic element located on or in a dielectric substrate between and in contact with a pair of electrical conductors, wherein the ceramic element includes one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.5 mol % throughout the ceramic element. A method of fabricating an electrical component, provides or forming a ceramic element between and in contact with a pair of electrical conductors on a substrate including depositing a mixture of metalorganic precursors and causing simultaneous decomposition of the metal oxide precursors to form the ceramic element including one or more metal oxides.
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公开(公告)号:US09905340B2
公开(公告)日:2018-02-27
申请号:US15102711
申请日:2014-11-19
Applicant: KOA CORPORATION
Inventor: Sohei Koda , Yuya Takeue
IPC: H01C7/00 , H01C17/00 , H01C17/065 , H01C17/28 , H01C1/142
CPC classification number: H01C7/003 , H01C1/142 , H01C7/00 , H01C17/006 , H01C17/065 , H01C17/28 , H01C17/281 , H01C17/283
Abstract: A method for manufacturing a chip resistive element including a substrate, a resistor formed on the substrate, and electrodes connected to opposite ends of the resistor, the method including an electrode forming step of forming the electrodes on the substrate. The electrode forming step includes a step of forming a first electrode layer on the substrate using a first electrode material containing silver, and a step of forming a second electrode layer on the first electrode layer using a second electrode material containing silver and palladium. The first electrode material has a higher silver content than the second electrode material.
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