公开(公告)号：US20150311077A1

公开(公告)日：2015-10-29

申请号：US14696060

申请日：2015-04-24

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Takeshi Kurose ,  Noriyasu Ido ,  Hiroyuki Kariya

IPC: H01L21/265 ,  H01L21/66 ,  H01J37/304 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/24514 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

Abstract: An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.

Abstract translation: 离子注入装置包括光束扫描器，能够测量晶片位置处的光束扫描方向上的离子照射量分布的光束测量单元，以及向束扫描器输出控制波形以扫描离子的控制单元 光束。 所述控制单元包括输出单元，其将参考控制波形输出到所述波束扫描器;获取单元，其从波束测量单元获取基于所述参考控制波形扫描的离子束测量的离子辐射量分布;以及生成单元 其通过使用获取的离子照射量分布来生成校正控制波形。 控制单元输出校正控制波形，使得离子照射量分布成为目标分布，并且每单位时间的离子照射量分布成为目标值。

公开(公告)号：US20150221561A1

公开(公告)日：2015-08-06

申请号：US14684953

申请日：2015-04-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01L21/66 ,  H01L21/265

CPC classification number: H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

Abstract: A method comprises placing a wafer and a ring-shaped beam profiler on a wafer holder, wherein the ring-shaped beam profiler is adjacent to the wafer, moving a first sensor and a second sensor simultaneously with the wafer holder, receiving a first sensed signal and a second sensed signal from the first sensor and the second sensor respectively and adjusting an ion beam generated by an ion beam generator based upon the first sensed signal and the second sensed signal.

Abstract translation: 一种方法包括将晶片和环形光束轮廓仪放置在晶片保持器上，其中环形光束轮廓仪邻近晶片，与晶片保持器同时移动第一传感器和第二传感器，接收第一感测信号 以及分别来自第一传感器和第二传感器的第二检测信号，并且基于第一感测信号和第二感测信号调整由离子束发生器产生的离子束。

公开(公告)号：US09048069B2

公开(公告)日：2015-06-02

申请号：US11809644

申请日：2007-06-01

Applicant: Juan-Lin Chen ,  Yung-Fu Yeh ,  Yuk-Tong Lee ,  Nai-Han Cheng

Inventor： Juan-Lin Chen ,  Yung-Fu Yeh ,  Yuk-Tong Lee ,  Nai-Han Cheng

IPC: H01J37/244 ,  H01J37/317 ,  H01J37/24 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/243 ,  H01J37/304 ,  H01J2237/30472 ,  H01J2237/31703

Abstract: An apparatus for monitoring beam currents of an implanter is provided. The apparatus includes a beam-sensing unit for sensing the beam currents; a position-determining unit for determining scan positions; and a computing unit. The computing unit is configured to perform the functions of receiving the beam currents from the beam-sensing unit; receiving the scan positions from the position-determining unit; and determining a drift status of the implanter from the beam currents, wherein the computing unit is configured to receive the beam currents and the scan position periodically between a starting time and an ending time of a scan process of the implanter.

Abstract translation: 提供一种用于监测注入机的束流的装置。 该装置包括用于感测束电流的光束感测单元; 位置确定单元，用于确定扫描位置; 和计算单元。 所述计算单元被配置为执行从所述波束感测单元接收波束电流的功能; 从所述位置确定单元接收扫描位置; 以及从所述束电流确定所述注入器的漂移状态，其中所述计算单元被配置为在所述注入器的扫描处理的开始时间和结束时间之间周期性地接收所述波束电流和所述扫描位置。

公开(公告)号：US09006692B2

公开(公告)日：2015-04-14

申请号：US14037218

申请日：2013-09-25

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Stanislav S. Todorov ,  George M. Gammel ,  Richard Allen Sprenkle ,  Norman E. Hussey ,  Frank Sinclair ,  Shengwu Chang ,  Joseph C. Olson ,  David Roger Timberlake ,  Kurt T. Decker-Lucke

IPC: G21K5/04 ,  C23C14/54 ,  G21K5/00

CPC classification number: C23C14/54 ,  C23C14/48 ,  G21K5/00 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/31703

Abstract: A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.

Abstract translation: 用于控制离子注入机中的离子束的系统包括检测器，用于沿垂直于离子束传播方向的第一方向执行离子束的多个束电流测量。 该系统还包括分析部件，用于基于多个束电流测量来确定光束电流分布，所述光束电流分布包括沿着第一方向的束电流的变化; 以及当光束电流分布指示光束高度低于阈值时调节离子束沿着第一方向的高度的调节部件。

公开(公告)号：US09006676B2

公开(公告)日：2015-04-14

申请号：US13918731

申请日：2013-06-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01L21/66 ,  H01J37/244 ,  H01J37/317

CPC classification number: H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.

Abstract translation: 用于监测晶片的离子分布的装置包括第一传感器和传感器。 将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。 控制器基于来自第一传感器和第二传感器的检测信号来确定晶片的每个区域的离子剂量。 此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。

公开(公告)号：US20140212595A1

公开(公告)日：2014-07-31

申请号：US13769189

申请日：2013-02-15

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Xiao BAI ,  Zhimin WAN ,  Donald Wayne BERRIAN

IPC: H01J29/46 ,  C23C14/48

CPC classification number: H01J37/1475 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/152 ,  H01J2237/1526 ,  H01J2237/303 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract translation: 用于在工件上注入离子的离子束的时间平均离子束轮廓可以被平滑以减少噪声，峰值，峰值等并且改善剂量均匀性。 诸如电磁体的辅助磁场装置可以沿着离子束路径设置，并且可以由周期性信号驱动以产生波动的磁场来平滑离子束轮廓（即，束电流密度分布）。 辅助磁场装置可以位于离子束的宽度和高度之外，并且可以产生在离子束的中心附近可能最强的不均匀的波动磁场，其中可以定位最高浓度的离子。 波动的磁场可能导致光束轮廓形状连续变化，从而使噪声随时间平均化。

公开(公告)号：US08581204B2

公开(公告)日：2013-11-12

申请号：US13235088

申请日：2011-09-16

Applicant: Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

Inventor： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: G01T1/16

CPC classification number: H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.

公开(公告)号：US08436326B2

公开(公告)日：2013-05-07

申请号：US12948298

申请日：2010-11-17

Applicant: Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

Inventor： Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

IPC: H01J37/317 ,  H01J37/28 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

Abstract translation: 一种多用途离子注入机束线配置，包括质量分析器磁体，随后是磁扫描器和磁准直器组合，其将弯曲引入到光束路径，所述束线被构造用于使得能够注入常见的单原子掺杂离子种类簇离子，所述束线配置具有 质量分析器磁体限定磁体的铁磁极之间的相当宽度的磁极间隙和质量选择孔，分析器磁体的尺寸设计成接受来自至少约80mm高度的槽形离子源提取孔的离子束，并且在 至少约7mm的宽度，并且在对应于梁的宽度的平面中的质量选择孔处产生分散体，质量选择孔能够被设定为质量选择宽度，该质量选择宽度的尺寸被选择为选择聚集离子的束 相同的掺杂物种类但递增不同的分子量，质量选择孔径也能够基本上被设定 较窄的质量选择宽度和具有质量选择孔径的分辨率的分析器磁体足以能够选择基本上单个原子或分子量的单原子掺杂离子束，磁扫描器和磁准直器被构造为连续弯曲离子 在相同意义上的光束，其与由光束线的分析器磁体引入的弯曲的方向相反。

公开(公告)号：US20130092825A1

公开(公告)日：2013-04-18

申请号：US13653211

申请日：2012-10-16

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC: H01L21/265

CPC classification number: H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

Abstract translation: 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。

公开(公告)号：US20130068162A1

公开(公告)日：2013-03-21

申请号：US13674723

申请日：2012-11-12

Applicant: Taiwan Semiconductor Manufacturing Company, L

Inventor： Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

IPC: C23C14/48

CPC classification number: C23C14/48 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30461 ,  H01J2237/31703 ,  H01L21/265 ,  H01L22/14

Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.

Abstract translation: 公开了一种用于控制剂量分布的系统和方法。 一个实施例包括将晶片分离成网格阵列的组件，并且基于测试来分配每个网格组件所需的剂量分布，以补偿晶片的不同区域之间的拓扑差异。 期望的剂量被分解为定向剂量组分，并且定向剂量组分转化成用于离子注入机的离子束的扫描速度。 速度可以被馈送到离子注入机中以控制晶片到束的速度，从而控制植入。