公开(公告)号：US08936405B2

公开(公告)日：2015-01-20

申请号：US11717391

申请日：2007-03-13

申请人： Kenichi Tamura ,  Masahiko Kobayashi

发明人： Kenichi Tamura ,  Masahiko Kobayashi

IPC分类号： H04B10/06 ,  G02B6/36 ,  H01L27/144 ,  H01L23/66 ,  H01L25/16 ,  H01L21/02 ,  H01L23/00

CPC分类号： H01L27/1443 ,  H01L21/0203 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/167 ,  H01L31/0203 ,  H01L2223/6611 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/49175 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/20752 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A multi-channel optical receiver module, includes a light-receiving element array, the light-receiving element array including multiple light-receiving elements; an amplifier disposed adjacent the light-receiving element array, the amplifier amplifying an output of a light-receiving element; a wiring relay submount disposed adjacent the amplifier; two wires for carrying a differential signal and being wired in parallel to one another and being connected between the wiring relay submount and the amplifier; an output pin; and another wire, the another wire being connected between the output pin and the wiring relay submount.

摘要翻译： 一种多通道光接收器模块，包括光接收元件阵列，所述光接收元件阵列包括多个光接收元件; 设置在所述光接收元件阵列附近的放大器，所述放大器放大光接收元件的输出; 设置在放大器附近的布线继电器底座; 用于承载差分信号并且彼此并联并连接在接线继电器底座和放大器之间的两条导线; 输出引脚 另一根导线，另一根线连接在输出引脚和布线继电器底座之间。

公开(公告)号：US08895343B2

公开(公告)日：2014-11-25

申请号：US13859874

申请日：2013-04-10

申请人： DRS RSTA, Inc.

发明人： Kirk D. Peterson ,  Eugene E. Krueger ,  Cari A. Ossenfort ,  Daniel B. Jardine ,  George D. Skidmore

IPC分类号： H01L21/00 ,  H01L27/144 ,  H01L27/146

CPC分类号： H01L31/02019 ,  H01L27/1443 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14649 ,  H01L27/14687 ,  H01L31/022408 ,  H01L31/0232

摘要： Methods and structures of photodetectors are described. The structure may include a readout integrated circuit substrate having an internally integrated capacitor. The structure may additionally include an external capacitor overlying the readout integrated circuit substrate. The external capacitor may be coupled with the internally integrated capacitor of the readout integrated circuit substrate, and configured to operate in parallel with the internally integrated capacitor of the readout integrated circuit substrate. The structure may also include a detector overlying the external capacitor.

摘要翻译： 描述了光电探测器的方法和结构。 该结构可以包括具有内部集成电容器的读出集成电路基板。 该结构可以另外包括覆盖读出集成电路基板的外部电容器。 外部电容器可以与读出集成电路基板的内部集成电容器耦合，并且被配置为与读出集成电路基板的内部集成电容器并联操作。 该结构还可以包括覆盖外部电容器的检测器。

公开(公告)号：US20140339666A1

公开(公告)日：2014-11-20

申请号：US14450812

申请日：2014-08-04

申请人： ZENA TECHNOLOGIES, INC.

发明人： Young-June Yu ,  Munib Wober

IPC分类号： H01L27/146

CPC分类号： H01L27/14643 ,  G01J1/429 ,  G01J4/04 ,  H01L27/1443 ,  H01L27/14605 ,  H01L27/14629 ,  H01L27/14683 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/107 ,  Y02E10/50

摘要： Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light.

摘要翻译： 这里描述的是可操作以检测偏振光的装置，包括：基板; 第一子像素 与所述第一子像素相邻的第二子像素; 所述第一子像素中的第一多个特征和所述第二子像素中的第二多个特征，其中所述第一多个特征基本上垂直于所述基底延伸并且在平行于所述基底的第一方向上基本上平行延伸，并且所述第二多个 特征基本上垂直于基底延伸并且在平行于基底的第二方向基本上平行延伸; 其中所述第一方向和所述第二方向不同; 第一多个特征和第二多个特征对偏振光的反应不同。

公开(公告)号：US20140339399A1

公开(公告)日：2014-11-20

申请号：US14362761

申请日：2012-12-10

申请人： SOCIETE FRANCAISE DE DETECTEURS INFRAROUGES-SOFRADIR

发明人： Eric Sanson

IPC分类号： H03F3/08

CPC分类号： H03F3/087 ,  G01J1/46 ,  G01S3/784 ,  H01L27/1443 ,  H04N5/33

摘要： An electromagnetic radiation detection circuit includes a photodetector transforming the received electromagnetic radiation into an electric current. A bias circuit is connected to the photodetector. An amplifying circuit has an input terminal coupled to the photodetector. An amplifying transistor has a first low-impedance electrode forming the input terminal of the amplifying circuit and a second low-impedance electrode coupled to an output terminal of the detection circuit. The transistor is configured to conduct the current applied on the first electrode. A high-impedance electric load is connected to the second electrode to deliver a voltage representative of the electric current originating from the photodetector.

摘要翻译： 电磁辐射检测电路包括将所接收的电磁辐射变换为电流的光电检测器。 偏置电路连接到光电检测器。 放大电路具有耦合到光电检测器的输入端。 放大晶体管具有形成放大电路的输入端的第一低阻抗电极和耦合到检测电路的输出端的第二低阻抗电极。 晶体管被配置为传导施加在第一电极上的电流。 高阻抗电负载连接到第二电极以传递表示源自光电检测器的电流的电压。

公开(公告)号：US20140327100A1

公开(公告)日：2014-11-06

申请号：US14352398

申请日：2012-08-02

申请人： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

发明人： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC分类号： H01L27/146

CPC分类号： H01L27/1446 ,  H01L27/1443 ,  H01L27/14605 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/02322 ,  H01L31/107 ,  H01L2224/11

摘要： A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

摘要翻译： 半导体光检测元件具有多个通道，每个通道由包括以盖革模式操作的多个雪崩光电二极管的光电二极管阵列组成，与各雪崩光电二极管串联连接的淬火电阻器，以及淬灭电阻器 并联连接 安装基板被配置为使得与第三主面对应的多个电极布置在第三主表面上，并且使得用于处理来自各个通道的输出信号的信号处理单元被布置在第四主表面侧。 在半导体基板中，形成与各信道电连接的信号线的通孔电极。 通孔电极和电极通过凸块电极电连接。

公开(公告)号：US20140264703A1

公开(公告)日：2014-09-18

申请号：US14287486

申请日：2014-05-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA

IPC分类号： H01L27/144 ,  H01L27/146

CPC分类号： H01L27/1443 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/1469

摘要： To provide a solid-state image sensing device or a semiconductor display device, which can easily obtain the positional data of an object without contact. Included are a plurality of first photosensors on which light with a first incident angle is incident from a first incident direction and a plurality of second photosensors on which light with a second incident angle is incident from a second incident direction. The first incident angle of light incident on one of the plurality of first photosensors is larger than that of light incident on one of the other first photosensors. The second incident angle of light incident on one of the plurality of second photosensors is larger than that of light incident on one of the other second photosensors.

摘要翻译： 提供可以容易地获得物体的位置数据而不接触的固态图像感测装置或半导体显示装置。 包括多个第一光电传感器，其上具有第一入射角的光从第一入射方向入射，以及多个第二光电传感器，其上具有第二入射角的光从第二入射方向入射。 入射到多个第一光电传感器之一上的第一入射角大于入射到另一个第一光电传感器之一上的光的入射角。 入射到多个第二光电传感器中的一个上的光的第二入射角大于入射在另一个第二光电传感器之一上的光的入射角。

公开(公告)号：US20140263972A1

公开(公告)日：2014-09-18

申请号：US13845177

申请日：2013-03-18

申请人： LITE-ON SINGAPORE PTE. LTD.

发明人： SENG-YEE CHUA ,  JOHN JULIUS DE LEON ASUNCION

IPC分类号： H01L27/144

CPC分类号： H01L27/1443 ,  H01L31/103 ,  H01L31/11

摘要： A stacked photodiode structure comprises a first-conductivity-type substrate, a second-conductivity-type well region and a first-conductivity-type well region. The first-conductivity-type substrate has a first surface for light incidence and a grounding terminal. The second-conductivity-type well region is formed in the first-conductivity-type substrate and adjacent to the first surface. The first-conductivity-type well region is formed in the second-conductivity-type well region and adjacent to the first surface. A PN junction between the first-conductivity-type well region and the second-conductivity-type well region generates free electrons responsive to visible light spectrum. A PN junction between the second-conductivity-type well region and the first-conductivity-type substrate generates free holes and free electrons responsive to mainly IR light. The difference between a first photocurrent generated from an anode terminal of the first-conductivity-type well region and a second photocurrent generated from a cathode terminal of the second-conductivity-type well region represents the intensity of incident IR light.

摘要翻译： 叠层光电二极管结构包括第一导电型衬底，第二导电型阱区和第一导电型阱区。 第一导电型基板具有用于光入射的第一表面和接地端子。 第二导电型阱区形成在第一导电型基板中并与第一表面相邻。 第一导电型阱区形成在第二导电型阱区中并与第一表面相邻。 第一导电型阱区域和第二导电型阱区域之间的PN结产生响应于可见光光谱的自由电子。 第二导电型阱区和第一导电型衬底之间的PN结产生自由空穴和自由电子，其主要响应于IR光。 从第一导电型阱区域的阳极端子产生的第一光电流与从第二导电型阱区域的阴极端子产生的第二光电流之间的差异表示入射的IR光的强度。

公开(公告)号：US20140252520A1

公开(公告)日：2014-09-11

申请号：US14074131

申请日：2013-11-07

申请人： RENSSELAER POLYTECHNIC INSTITUTE

发明人： Rajendra P. DAHAL ,  Jacky Kuan-Chih HUANG ,  James J.Q. LU ,  Yaron DANON ,  Ishwara B. BHAT

IPC分类号： G01T3/08 ,  H01L31/115

CPC分类号： H01L31/115 ,  G01T3/00 ,  G01T3/08 ,  H01L27/142 ,  H01L27/1443 ,  H01L31/02161 ,  H01L31/03529 ,  H01L31/18 ,  Y02E10/50

摘要： Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.

摘要翻译： 提供中子检测结构和制造方法，其包括：具有从表面延伸到基板中的多个空腔的基板; 在衬底内的p-n结，并且至少部分地与限定多个空腔的衬底的内腔壁间隔开相对的关系; 以及设置在所述多个空腔内的中子响应材料。 中子响应材料对吸收的中子响应于释放电离辐射产物，并且衬底内的pn结与衬底的内腔壁至少部分相对地间隔开并且至少部分地沿着衬底的内腔壁延伸，减少了中子的漏电流 - 检测结构。

公开(公告)号：US20140239429A1

公开(公告)日：2014-08-28

申请号：US14346768

申请日：2012-08-06

申请人： Kazuhisa Yamamura

发明人： Kazuhisa Yamamura

IPC分类号： H01L27/144

CPC分类号： H01L27/1446 ,  H01L27/1443 ,  H01L27/14603 ,  H01L31/115

摘要： A radiation detector has a semiconductor substrate of a first conductivity type, a plurality of semiconductor regions of a second conductivity type making junctions with the semiconductor substrate, and a plurality of electrodes joined to the corresponding semiconductor regions. The electrodes cover the corresponding semiconductor regions, when viewed from a direction perpendicular to a first principal face. The semiconductor regions include a plurality of first and second semiconductor regions in a two-dimensionally array. The first semiconductor regions arrayed in a first direction in the two dimensional array out of the plurality of first semiconductor regions are electrically connected to each other, and the second semiconductor regions arrayed in a second direction intersecting with the first direction out of the plurality of second semiconductor regions are electrically connected to each other.

摘要翻译： 辐射检测器具有第一导电类型的半导体衬底，与半导体衬底形成接合的第二导电类型的多个半导体区域，以及连接到相应的半导体区域的多个电极。 当从垂直于第一主面的方向观察时，电极覆盖对应的半导体区域。 半导体区域包括二维阵列中的多个第一和第二半导体区域。 在多个第一半导体区域中的二维阵列中沿第一方向排列的第一半导体区域彼此电连接，并且第二半导体区域沿与第一方向相交的第二方向排列在多个第二半导体区域中 半导体区域彼此电连接。

公开(公告)号：US08791538B2

公开(公告)日：2014-07-29

申请号：US13655907

申请日：2012-10-19

申请人： Hamamatsu Photonics K.K.

发明人： Koei Yamamoto ,  Terumasa Nagano ,  Kazuhisa Yamamura ,  Kenichi Sato ,  Ryutaro Tsuchiya

IPC分类号： H01L31/107 ,  H01L31/00

CPC分类号： H01L27/14643 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14636 ,  H01L28/24 ,  H01L31/02027 ,  H01L31/022416 ,  H01L31/022466 ,  H01L31/107

摘要： A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

摘要翻译： 光接收区域包括多个光检测部分10.光检测部分10具有第二接触电极4A。 第二接触电极4A配置在与第一接触电极3A重叠的位置，以与第一接触电极接触。 此外，电阻层4B继续到第二接触电极4A。