公开(公告)号：US06621843B2

公开(公告)日：2003-09-16

申请号：US09842521

申请日：2001-04-25

申请人： Byueng-Su Yoo ,  O-Kyun Kwon ,  Young-Gu Ju

发明人： Byueng-Su Yoo ,  O-Kyun Kwon ,  Young-Gu Ju

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/2009 ,  H01S5/2072 ,  H01S5/3054 ,  H01S5/34306 ,  H01S2301/176

摘要： Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region.

公开(公告)号：US06584136B2

公开(公告)日：2003-06-24

申请号：US09882342

申请日：2001-06-15

申请人： Young-Gu Ju ,  Byueng-Su Yoo ,  O-Kyun Kwon

发明人： Young-Gu Ju ,  Byueng-Su Yoo ,  O-Kyun Kwon

IPC分类号： H01S308

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01S5/005 ,  H01S5/0267 ,  H01S5/18

摘要： A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.

公开(公告)号：US5770851A

公开(公告)日：1998-06-23

申请号：US713535

申请日：1996-09-13

申请人： Hyo-Hoon Park ,  Kwang-Joon Kim ,  Kyung-Sook Hyun ,  O-Kyun Kwon ,  Seok-Ho Song ,  Byueng-Su Yoo ,  Hye-Yong Chu

发明人： Hyo-Hoon Park ,  Kwang-Joon Kim ,  Kyung-Sook Hyun ,  O-Kyun Kwon ,  Seok-Ho Song ,  Byueng-Su Yoo ,  Hye-Yong Chu

IPC分类号： G02B6/43 ,  G02F3/02 ,  H01J40/14

CPC分类号： G02F3/028 ,  G02B6/43

摘要： An improved parallel optical logic operator provides a path for light to pass through substrates in which a light source and an optical logic device are arranged. An optical logic device operates by transmission of light forwarded to a predetermined direction. This increases integration efficiency of the system by eliminating optical parts for changing the light path. A unit chip includes a laser array for generating a predetermined light in accordance with an electrical signal for a logic process, a laser array substrate on which via holes are formed for passing light, a microlens array for converting the light beam emitted from each laser device of the laser array into a parallel light beam for passing through the via hole, and an optical logic circuit array formed with a combination of an S-SEED which performs a logic function by transmission of the light signal through an optical window in S-SEED. A plurality of unit chips are laminated so that the light emitted from the laser device of one of the unit chips passes through an optical logic circuit of a corresponding unit chip and can be made incident on the optical logic circuit in the next unit chip through a via hole.

摘要翻译： 改进的并行光逻辑运算器提供光通过其中布置光源和光逻辑器件的衬底的路径。 光逻辑器件通过传输转发到预定方向的光来操作。 这通过消除用于改变光路的光学部件来提高系统的集成效率。 单元芯片包括用于根据用于逻辑处理的电信号产生预定光的激光阵列，其上形成有用于通过光的通孔的激光阵列基板，用于转换从每个激光装置发射的光束的微透镜阵列 的激光器阵列的平行光束通过通孔;以及光学逻辑电路阵列，其形成有S-SEED的组合，S-SEED通过S-SEED中的光学窗口传输光信号来执行逻辑功能 。 多个单位芯片被层叠，使得从单个芯片之一的激光装置发射的光通过相应的单元芯片的光学逻辑电路，并且可以通过一个单元芯片入射到下一个单元芯片中的光学逻辑电路上 通孔。

公开(公告)号：US20120104531A1

公开(公告)日：2012-05-03

申请号：US13191758

申请日：2011-07-27

申请人： Mi-Ran PARK ,  O-Kyun Kwon

发明人： Mi-Ran PARK ,  O-Kyun Kwon

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/107 ,  H01L31/02027 ,  H01L31/02161 ,  H01L31/184 ,  Y02E10/544

摘要： Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

摘要翻译： 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。

公开(公告)号：US20100316383A1

公开(公告)日：2010-12-16

申请号：US12582211

申请日：2009-10-20

申请人： Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

发明人： Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

IPC分类号： H04J14/02

CPC分类号： H04J14/0282

摘要： Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.

摘要翻译： 提供了一种波分复用无源光网络（WDM-PON）装置。 WDM-PON包括光源单元，光复用器和啁啾布拉格光栅。 光源单元产生光信号。 光复用器通过光复用器的一端从光源单元接收光信号，复用光信号，并输出复用的光信号。 啁啾布拉格光栅连接到光复用器的另一端。 啁啾布拉格光栅再次反射已经通过光复用器的光信号，以将光信号的某一部分重新输入光复用器和光源单元。 光复用器对重新输入的光信号执行频谱分片，并使用光复用器的信道波长作为主振荡波长来操作光源单元。

公开(公告)号：US07693384B2

公开(公告)日：2010-04-06

申请号：US12111884

申请日：2008-04-29

申请人： Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

发明人： Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

IPC分类号： G02B6/10

CPC分类号： G02B6/12007

摘要： A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

摘要翻译： 提供了一种波导结构。 波导结构包括：缝隙通道波导，包括第一和第二图案，它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数（TOC）乘以第二上层的TOC是负数。

公开(公告)号：US5623140A

公开(公告)日：1997-04-22

申请号：US451059

申请日：1995-05-25

申请人： Young-Wan Choi ,  O-Kyun Kwon ,  El-Hang Lee

发明人： Young-Wan Choi ,  O-Kyun Kwon ,  El-Hang Lee

IPC分类号： G02F3/02 ,  H01J40/14

CPC分类号： G02F3/028

摘要： Disclosed is a nonbiased bistable optical device and a method for fabricating the device, which has a semi-insulating GaAs substrate; a lower mirror having a plurality of reflecting layers which are repeatedly formed on said substrate at least more than twelve times, each of said reflecting layers having a first reflecting film having a first refractive index on said substrate and a second reflecting film a second refractive index different from the first refractive index; a first contact layer formed on the lower mirror; a first buffer layer formed on the first contact layer; a multiple quantum well(MQW) having a plurality of shallow layers which are repeatedly formed, each of said shallow layers having a barrier and a shallow quantum well; a second buffer layer grown on said MQW; and a second contact layer formed on said second buffer layer. The device has an excellent bistablity even without an external applied voltage.

摘要翻译： 公开了一种非偏置双稳态光学器件及其制造方法，该器件具有半绝缘GaAs衬底; 具有多个反射层的下反射镜，所述多个反射层在所述基板上反复形成至少十二次，每个所述反射层具有在所述基板上具有第一折射率的第一反射膜和第二反射膜，第二折射率 不同于第一折射率; 形成在下反射镜上的第一接触层; 形成在所述第一接触层上的第一缓冲层; 具有重复形成的多个浅层的多量子阱（MQW），每个所述浅层具有阻挡层和浅量子阱; 在所述MQW上生长的第二缓冲层; 以及形成在所述第二缓冲层上的第二接触层。 即使没有外部施加电压，该器件也具有优异的双稳态。

公开(公告)号：US08804232B2

公开(公告)日：2014-08-12

申请号：US13307067

申请日：2011-11-30

申请人： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

发明人： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC分类号： H01S5/10

CPC分类号： H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

摘要： A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

摘要翻译： 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US20130163916A1

公开(公告)日：2013-06-27

申请号：US13487807

申请日：2012-06-04

申请人： Hyun Soo KIM ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

发明人： Hyun Soo KIM ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

IPC分类号： G02B6/12 ,  H01L21/02

CPC分类号： G02B6/43 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/4224 ,  G02B6/4232

摘要： Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.

摘要翻译： 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。

公开(公告)号：US07927988B2

公开(公告)日：2011-04-19

申请号：US12488577

申请日：2009-06-21

申请人： In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

发明人： In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC分类号： H01L21/425

CPC分类号： H01L21/2007 ,  H01L21/76251

摘要： Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。