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23 条记录 (耗时 0.016 秒)

    Method for manufacturing capacitor in semiconductor device
    1.
    发明授权
    Method for manufacturing capacitor in semiconductor device 失效
    在半导体器件中制造电容器的方法

    公开(公告)号：US06495414B2

    公开(公告)日：2002-12-17

    申请号：US09867659

    申请日：2001-05-31

    申请人： Seung Kyu Han ,  Dong Su Park

    发明人： Seung Kyu Han ,  Dong Su Park

    IPC分类号： H01L218242

    CPC分类号： H01L28/75 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/28568 ,  H01L21/3145 ,  H01L28/40

    摘要： The present invention discloses a method for manufacturing a capacitor of a semiconductor memory device. The disclosed present invention comprises steps of forming a lower electrode made of a conductive polysilicon film or a conductive amorphous silicon film on a semiconductor substrate; forming a nitride film over the lower electrode; depositing an amorphous TaON thin film over the nitride film; subjecting the amorphous TaON thin film to a thermal treatment to effect a crystallization thereof; and forming a laminated structure composed of a TiON film and a doped silicon film for an upper electrode on the crystallized TaON thin film.

    摘要翻译： 本发明公开了一种制造半导体存储器件的电容器的方法。本发明包括在半导体衬底上形成由导电多晶硅膜或导电非晶硅膜制成的下电极的步骤; 在下电极上形成氮化膜; 在氮化物膜上沉积无定形TaON薄膜; 对无定形TaON薄膜进行热处理以使其结晶化; 并且在结晶的TaON薄膜上形成由TiON膜和用于上电极的掺杂硅膜构成的层压结构。

    Method for Fabricating Semiconductor Device Having Bulb-Type Recessed Channel
    4.
    发明申请
    Method for Fabricating Semiconductor Device Having Bulb-Type Recessed Channel 审中-公开
    制造具有灯泡型嵌入式通道的半导体器件的方法

    公开(公告)号：US20080160699A1

    公开(公告)日：2008-07-03

    申请号：US11759930

    申请日：2007-06-07

    申请人： Min Yong Lee ,  Yong Seok Eun ,  Dong Su Park ,  Jun Soo Chang

    发明人： Min Yong Lee ,  Yong Seok Eun ,  Dong Su Park ,  Jun Soo Chang

    IPC分类号： H01L21/336

    CPC分类号： H01L29/66537 ,  H01L21/26586 ,  H01L29/66621 ,  H01L29/78

    摘要： A method for fabricating a semiconductor device having a bulb-type recessed channel including forming a mask layer on the semiconductor substrate to expose a region where a trench for a bulb-type recessed channel can be formed, forming the trench in the semiconductor substrate, implanting dopant ions in three-dimensional radial directions with a predetermined tilt angle in the exposed region of the semiconductor substrate, removing the mask layer, forming a gate stack in the region including the trench, and forming a source/drain in the semiconductor substrate.

    摘要翻译： 一种制造具有灯泡型凹槽的半导体器件的方法，包括在半导体衬底上形成掩模层，以暴露可形成用于灯泡型凹槽的沟槽的区域，在半导体衬底中形成沟槽， 掺杂剂离子在半导体衬底的暴露区域中具有预定倾斜角的三维径向方向，去除掩模层，在包括沟槽的区域中形成栅叠层，并在半导体衬底中形成源/漏。

    Capacitor in semiconductor device and method for fabricating the same
    5.
    发明授权
    Capacitor in semiconductor device and method for fabricating the same 失效

    公开(公告)号：US06825518B2

    公开(公告)日：2004-11-30

    申请号：US10331532

    申请日：2002-12-30

    申请人： Cheol Hwan Park ,  Dong Su Park ,  Tae Hyeok Lee ,  Sang Ho Woo

    发明人： Cheol Hwan Park ,  Dong Su Park ,  Tae Hyeok Lee ,  Sang Ho Woo

    IPC分类号： H01L2972

    CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/3143

    摘要： A capacitor in a semiconductor device and a method for fabricating the same is disclosed. Disclosed the method for fabricating the capacitor in a semiconductor device comprises the steps of: forming a lower electrode made of doped silicon materials on a semiconductor substrate; depositing a thin silicon nitride layer on the lower electrode; forming a silicon oxynitride layer on the surface of the silicon nitride layer through oxidation of the silicon nitride layer; depositing a dielectric layer on the silicon oxynitride layer; and forming an upper electrode on the dielectric layer. According to the method, after the deposition of the silicon nitride layer on the dielectric layer, oxidation treatment of the resultant structure is performed and the dielectric layer is formed on the oxidized silicon nitride layer, thereby improving the interface characteristics between the lower electrode and the dielectric layer and resulting in a decrease of the leakage current and an increase of the breakdown voltage of the capacitor in the semiconductor device.

    Method of forming capacitor for semiconductor memory device
    6.
    发明授权
    Method of forming capacitor for semiconductor memory device 失效
    形成半导体存储器件电容器的方法

    公开(公告)号：US06337291B1

    公开(公告)日：2002-01-08

    申请号：US09607976

    申请日：2000-06-30

    申请人： Dong Su Park ,  Tae Hyeok Lee

    发明人： Dong Su Park ,  Tae Hyeok Lee

    IPC分类号： H01L21469

    CPC分类号： H01L21/3144 ,  H01L21/3143 ,  H01L21/3145 ,  H01L21/32105 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91

    摘要： Disclosed herein is a method of forming a capacitor for a semiconductor memory device. The method comprises a step of:forming a lower electrode on the semiconductor substrate; forming an O3-oxide film on the lower electrode; forming Si—O—N bonds on the surface of the O3-oxide film; forming a TaON film on the Si—O—N bonds by a chemical vapor deposition of a Ta chemical vapor, an O2 gas and an NH3 gas; and forming an upper electrode on the TaON film.

    摘要翻译： 这里公开了一种形成用于半导体存储器件的电容器的方法。 该方法包括以下步骤：在半导体衬底上形成下电极; 在下电极上形成氧化物膜; 在O3氧化物膜的表面上形成Si-O-N键; 通过Ta化学蒸气，O2气和NH3气体的化学气相沉积在Si-O-N键上形成TaON膜; 并在TaON膜上形成上电极。

    Method of manufacturing semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07084072B2

    公开(公告)日：2006-08-01

    申请号：US10874983

    申请日：2004-06-23

    申请人： Cheol Hwan Park ,  Sang Ho Woo ,  Chang Rock Song ,  Dong Su Park ,  Tae Hyeok Lee

    发明人： Cheol Hwan Park ,  Sang Ho Woo ,  Chang Rock Song ,  Dong Su Park ,  Tae Hyeok Lee

    IPC分类号： H01L21/302

    CPC分类号： H01L21/28141 ,  H01L21/3144 ,  H01L21/3185 ,  H01L27/1052 ,  H01L27/10873

    摘要： Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming a gate in a cell region and a peripheral region of a substrate, depositing a buffer oxide layer on the gate and the substrate, annealing a resultant structure of the substrate, depositing a nitride spacer layer on the buffer oxide layer, depositing an oxide spacer layer on the nitride spacer layer, forming an oxide spacer at the peripheral region of the substrate, and removing the oxide spacer layer remaining in the cell region. The annealing step is additionally carried out after depositing the buffer oxide layer so as to improve the interfacial surface characteristic and film quality, so that oxide etchant is prevented from penetrating into the silicon substrate during the wet dip process. Unnecessary voids are prevented from being created in the silicon substrate.

    摘要翻译： 公开了半导体器件的制造方法。 该方法包括以下步骤：在衬底的单元区域和外围区域中形成栅极，在栅极和衬底上沉积缓冲氧化物层，退火所得衬底的结构，在缓冲氧化物上沉积氮化物间隔层 在所述氮化物间隔层上沉积氧化物间隔层，在所述衬底的周围区域形成氧化物间隔物，以及去除所述电池区域中剩余的氧化物间隔层。 在沉积缓冲氧化物层之后另外进行退火步骤，以改善界面表面特性和膜质量，从而防止在湿法浸渍过程中氧化物蚀刻剂渗入硅衬底。 防止在硅衬底中产生不必要的空隙。