公开(公告)号：US07976893B2

公开(公告)日：2011-07-12

申请号：US11133269

申请日：2005-05-20

申请人： Yoshihiko Takano ,  Masanori Nagao ,  Minoru Tachiki ,  Hiroshi Kawarada ,  Hitoshi Umezawa ,  Kensaku Kobayashi

发明人： Yoshihiko Takano ,  Masanori Nagao ,  Minoru Tachiki ,  Hiroshi Kawarada ,  Hitoshi Umezawa ,  Kensaku Kobayashi

IPC分类号： B05D5/12 ,  C23C16/00 ,  C23C8/00 ,  H05H1/30 ,  H05H1/24 ,  B01J3/06 ,  D01C5/00 ,  D01F9/12

CPC分类号： C23C16/278 ,  C23C16/274 ,  H01L39/12 ,  H01L39/24 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48

摘要： A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.

摘要翻译： 具有超导性的重硼掺杂金刚石薄膜通过化学气相沉积沉积，其中至少使用包含氢的碳化合物和硼化合物的气体混合物。 通过化学气相沉积沉积的金刚石薄膜的优点是它可以含有高浓度的硼，特别是在（111）取向膜中。 通过化学气相沉积沉积的掺杂硼的金刚石薄膜显示了典型的II型超导体的特性。

公开(公告)号：US20120156392A1

公开(公告)日：2012-06-21

申请号：US13391918

申请日：2010-08-30

申请人： Hiroshi Kawarada ,  Ryogo Kato ,  Toshiyuki Ohashi ,  Toshio Tokune ,  Hidefumi Nikawa

发明人： Hiroshi Kawarada ,  Ryogo Kato ,  Toshiyuki Ohashi ,  Toshio Tokune ,  Hidefumi Nikawa

IPC分类号： C23C16/26 ,  B05D3/06 ,  B82Y40/00

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B31/0233 ,  C01B32/162 ,  C01B2202/08 ,  H01J37/32192 ,  H01J37/3222

摘要： Disclosed is a method capable of accelerating the growth of oriented carbon nanotubes when manufacturing the oriented carbon nanotubes by a plasma CVD. Under the circulation of a gas which is the raw material of the carbon nanotubes, plasma is generated by an antenna (6) provided in a depressurized treatment chamber (2), and substrates (9, 15) provided with a reaction prevention layer and a catalyst material layer which are formed on a base material are held at a distance, to which a radical can reach and an attack of an ion generated as a by-product of the radical can be avoided, from a plasma generation area (7). The tip (6a) of the antenna (6) can be controlled so as to match with the position of the anti-node of a stationary wave (27) of microwaves.

摘要翻译： 公开了一种能够通过等离子体CVD制造定向碳纳米管时能够促进取向碳纳米管生长的方法。 在作为碳纳米管的原料的气体的循环下，通过设置在减压处理室（2）中的天线（6）产生等离子体，并且将具有反应防止层的基板（9,15） 在等离子体产生区域（7）上，形成在基材上的催化剂材料层保持一定距离，自由基可以达到一定距离，可以避免作为自由基的副产物产生的离子的侵蚀。 天线（6）的尖端（6a）可以被控制成与微波的静止波（27）的反节点的位置相匹配。

公开(公告)号：US07339212B2

公开(公告)日：2008-03-04

申请号：US10549764

申请日：2004-03-25

申请人： Hiroshi Kawarada

发明人： Hiroshi Kawarada

IPC分类号： H01L23/58 ,  H01L24/00

CPC分类号： G01N27/4145 ,  G01N27/308

摘要： A p channel field effect transistor in which the sensitivity of an enzyme can be enhanced by immobilizing the enzyme directly on an FET channel surface (diamond surface), as well as a sensor including the same, is provided. A diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals is treated under the action of glutaraldehyde OHC(CH2)3CHO (30), so that the glutaraldehyde (30) is immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. Subsequently, urease (29) is further applied thereto, so that the amino group (31) of the urease (29) is bonded to the glutaraldehyde (30). That is, the urease (29) can be immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. When the urea concentration is increased from 10−6 M to 10−2 M, the threshold voltage shifts by about 0.1 V in the positive direction, and the sensitivity to urea concentration of 30 mV/decade is exhibited.

摘要翻译： 提供了一种p沟道场效应晶体管，其中通过将酶直接固定在FET沟道表面（金刚石表面）上以及包括其的传感器可以提高酶的灵敏度。 在戊二醛OHC（CH 2 CH 3）3 CHO（30）的作用下处理具有混合氢末端，氧末端和氨基末端的金刚石表面（22），因此 将戊二醛（30）固定在具有混合的氢末端，氧末端和氨基末端的金刚石表面（22）上。 随后，进一步施用脲酶（29），使脲酶（29）的氨基（31）与戊二醛（30）结合。 也就是说，脲酶（29）可以固定在具有混合氢末端，氧末端和氨基末端的金刚石表面（22）上。 当尿素浓度从10 -6 M增加到10 -2 M时，阈值电压在正方向偏移约0.1 V，对尿素浓度敏感 30 mV /十年。

公开(公告)号：US20060254910A1

公开(公告)日：2006-11-16

申请号：US10549764

申请日：2004-03-25

申请人： Hiroshi Kawarada

发明人： Hiroshi Kawarada

IPC分类号： C12Q1/00

CPC分类号： G01N27/4145 ,  G01N27/308

摘要： A p channel field effect transistor in which the sensitivity of an enzyme can be enhanced by immobilizing the enzyme directly on an FET channel surface (diamond surface), as well as a sensor including the same, is provided. A diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals is treated under the action of glutaraldehyde OHC(CH2)3CHO (30), so that the glutaraldehyde (30) is immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. Subsequently, urease (29) is further applied thereto, so that the amino group (31) of the urease (29) is bonded to the glutaraldehyde (30). That is, the urease (29) can be immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. When the urea concentration is increased from 10−6 M to 10−2 M, the threshold voltage shifts by about 0.1 V in the positive direction, and the sensitivity to urea concentration of 30 mV/decade is exhibited.

摘要翻译： 提供了一种p沟道场效应晶体管，其中通过将酶直接固定在FET沟道表面（金刚石表面）上以及包括其的传感器可以提高酶的灵敏度。 在戊二醛OHC（CH 2 CH 3）3 CHO（30）的作用下处理具有混合氢末端，氧末端和氨基末端的金刚石表面（22），因此 将戊二醛（30）固定在具有混合的氢末端，氧末端和氨基末端的金刚石表面（22）上。 随后，进一步施用脲酶（29），使脲酶（29）的氨基（31）与戊二醛（30）结合。 也就是说，脲酶（29）可以固定在具有混合氢末端，氧末端和氨基末端的金刚石表面（22）上。 当尿素浓度从10 -6 M增加到10 -2 M时，阈值电压在正方向偏移约0.1 V，对尿素浓度敏感 30 mV /十年。

公开(公告)号：US20060035788A1

公开(公告)日：2006-02-16

申请号：US11133269

申请日：2005-05-20

申请人： Yoshihiko Takano ,  Masanori Nagao ,  Minoru Tachiki ,  Hiroshi Kawarada ,  Hitoshi Umezawa ,  Kensaku Kobayashi

发明人： Yoshihiko Takano ,  Masanori Nagao ,  Minoru Tachiki ,  Hiroshi Kawarada ,  Hitoshi Umezawa ,  Kensaku Kobayashi

IPC分类号： C01B31/06 ,  H01L39/24

CPC分类号： C23C16/278 ,  C23C16/274 ,  H01L39/12 ,  H01L39/24 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48

摘要： A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.

摘要翻译： 具有超导性的重硼掺杂金刚石薄膜通过化学气相沉积沉积，其中至少使用包含氢的碳化合物和硼化合物的气体混合物。 通过化学气相沉积沉积的金刚石薄膜的优点是它可以含有高浓度的硼，特别是在（111）取向膜中。 通过化学气相沉积沉积的掺杂硼的金刚石薄膜显示了典型的II型超导体的特性。

公开(公告)号：US5786604A

公开(公告)日：1998-07-28

申请号：US527809

申请日：1995-09-13

申请人： Satoshi Yamashita ,  Hiroshi Kawarada ,  Masahiro Itoh ,  Naofumi Nakamura

发明人： Satoshi Yamashita ,  Hiroshi Kawarada ,  Masahiro Itoh ,  Naofumi Nakamura

IPC分类号： H01L21/04 ,  H01L21/338 ,  H01L21/76 ,  H01L29/16 ,  H01L29/812 ,  H01L31/0312 ,  H01L29/00 ,  H01L29/12

CPC分类号： H01L29/1602 ,  H01L21/76 ,  H01L29/66045 ,  H01L29/812

摘要： A diamond semiconductor device having at least one MESFET integrated on a single diamond substrate and insulated from other semiconductor elements is made by preparing a homoepitaxial diamond film 1 having a hydrogen-terminated surface; then making a drain ohmic contact 3, a source ohmic contact 4, both of gold, and a gate electrode 5 of aluminum on the film 1; and changing a site of the hydrogen-terminated surface other than the site for the MESFET to be terminated with atoms other than hydrogen atoms.

摘要翻译： 具有集成在单个金刚石基底上并与其它半导体元件绝缘的至少一个MESFET的金刚石半导体器件通过制备具有氢封端表面的同质外延金刚石膜1而制成; 然后在膜1上形成漏极欧姆接触3，源欧姆接触4，金和铝的栅电极5; 并且改变除用氢原子以外的原子终止的MESFET的位置之外的氢封端表面的位置。

公开(公告)号：US5420879A

公开(公告)日：1995-05-30

申请号：US120757

申请日：1993-09-15

申请人： Hiroshi Kawarada ,  Takahiro Imai ,  Yoshiki Nishibayashi ,  Naoji Fujimori

发明人： Hiroshi Kawarada ,  Takahiro Imai ,  Yoshiki Nishibayashi ,  Naoji Fujimori

IPC分类号： H01S3/02 ,  H01S3/0959 ,  H01S3/16 ,  H01S5/30

CPC分类号： H01S3/0959 ,  H01S3/16 ,  H01S5/30

摘要： A solid state laser includes a diamond crystal as a medium of laser beam emission, which generates a laser beam having a wavelength of 225 to 300 nm through exciton light emission.

摘要翻译： 固体激光器包括作为激光束发射介质的金刚石晶体，其通过激子发光产生具有225至300nm的波长的激光束。

公开(公告)号：US4402999A

公开(公告)日：1983-09-06

申请号：US266053

申请日：1981-05-21

申请人： Toshio Tatsumichi ,  Hiroshi Kawarada

发明人： Toshio Tatsumichi ,  Hiroshi Kawarada

IPC分类号： G02F1/1333 ,  G02F1/1337 ,  B05D5/12

CPC分类号： G02F1/133345 ,  G02F1/133719 ,  Y10T428/1095

摘要： A method is provided for the preparation of an electrode substrate for use in a liquid display device utilizing perpendicular alignment of liquid crystal and dichroic dye molecules. In the improved method, a base substrate bearing an electrode film is coated with an insulating film on the surface which contacts the liquid crystal. The insulating film is rubbed with cloth in a fixed direction and following the rubbing treatment, the rubbed surface is treated with a silane surfactant so that when the electrode substrate is employed in a liquid crystal display device, the liquid crystal and dye molecules are arranged in the direction of the major axes thereof in substantially perpendicular orientation at constant tilt angles in the same direction on the interface with said electrode substrate.

摘要翻译： 提供了一种制备用于利用液晶和二色性染料分子的垂直取向的液晶显示装置中的电极基板的制备方法。 在改进的方法中，在与液晶接触的表面上涂覆有带有电极膜的基底衬底上的绝缘膜。 绝缘膜在固定方向上用布擦拭，摩擦处理后，用硅烷表面活性剂处理摩擦面，使液晶显示装置中的液晶和染料分子配置在 其主轴的方向在与所述电极基板的界面上以相同的方向以恒定的倾斜角度基本上垂直取向。

公开(公告)号：US4332075A

公开(公告)日：1982-06-01

申请号：US41507

申请日：1979-05-22

申请人： Isao Ota ,  Haruhiro Shirazawa ,  Toshio Tatsumichi ,  Hiroshi Kawarada ,  Tetsuro Ohtsuka

发明人： Isao Ota ,  Haruhiro Shirazawa ,  Toshio Tatsumichi ,  Hiroshi Kawarada ,  Tetsuro Ohtsuka

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786 ,  H01L21/04 ,  H01L21/12

CPC分类号： H01L27/13 ,  H01L27/1214 ,  H01L29/78681 ,  Y10S438/98

摘要： A method of producing thin film transistor arrays and having at least 7 steps including: a first step of forming a first electrode layer uniformly over an insulating substrate; a second step of forming electrodes, such as drain and source electrodes and bus bars with a desired pattern by photoetching the first electrode; a third step of forming a uniform semiconducting layer on the surface of the substrate having the patterned electrodes; a fourth step of successively forming a uniform insulating layer over the uniformly deposited semiconducting layer while keeping the array in a vacuum; a fifth step of photoetching the uniformly deposited insulating layer into a desired pattern; a sixth step of photoetching the uniform semiconducting layer into the same pattern as the patterned insulating layer; a seventh step of forming a second electrode uniformly over the surface having the patterned electrodes and insulating layer; and an eighth step of photoetching the uniformly deposited second electrode into a desired pattern.

摘要翻译： 一种制造薄膜晶体管阵列并具有至少7个步骤的方法，包括：在绝缘基板上均匀地形成第一电极层的第一步骤; 第二步骤，通过对第一电极进行光刻，形成具有期望图案的漏极和源电极以及母线的电极; 在具有图案化电极的基板的表面上形成均匀的半导体层的第三步骤; 在将阵列保持在真空中的同时在均匀沉积的半导体层上连续形成均匀绝缘层的第四步骤; 将均匀沉积的绝缘层光刻成所需图案的第五步骤; 将均匀半导体层光刻成与图案化绝缘层相同的图案的第六步骤; 在具有图案化电极和绝缘层的表面上均匀地形成第二电极的第七步骤; 以及将均匀沉积的第二电极光刻成所需图案的第八步骤。

公开(公告)号：US20140031253A1

公开(公告)日：2014-01-30

申请号：US13946810

申请日：2013-07-19

申请人： Varun Penmatsa ,  Chunlei Wang ,  Hiroshi Kawarada

发明人： Varun Penmatsa ,  Chunlei Wang ,  Hiroshi Kawarada

IPC分类号： G01N33/551 ,  G01N33/74

CPC分类号： G01N33/551 ,  G01N33/582 ,  G01N33/74 ,  G01N2333/49

摘要： The potential of aptamers as ligand binding molecule have opened new avenues in the development of biosensors for proteins, such as cancer oncoproteins. Disclosed herein is a label-free detection strategy using signaling aptamer/protein binding complex for proteins, such as platelet-derived growth factor (PDGF-BB) oncoprotein. The detection mechanism is based on the release of a fluorophore (e.g., TOTO intercalating dye) from the target binding aptamer's stem structure when it captures the protein, e.g., PDGF. Amino-terminated three-dimensional carbon microarrays fabricated by pyrolyzing patterned photoresist are used as a detection platform. The sensor showed near linear relationship between the relative fluorescence difference and protein concentration even in the sub-nanomolar range with an excellent detection limit of 5 pmol. This detection strategy is promising in a wide range of applications in the detection of cancer biomarkers and other proteins.

摘要翻译： 适体作为配体结合分子的潜力为开发蛋白质生物传感器（如癌症癌蛋白）开辟了新的途径。 本文公开了使用信号转导蛋白/蛋白质结合复合物（例如血小板衍生生长因子（PDGF-BB）癌蛋白）的无标记检测策略。 检测机制基于当其捕获蛋白质例如PDGF时从靶结合适体的茎结构释放荧光团（例如，TOTO嵌入染料）。 使用通过热解图案化光致抗蚀剂制造的氨基封端的三维碳微阵列用作检测平台。 传感器即使在亚纳摩尔范围内也显示相对荧光差异和蛋白质浓度之间的近似线性关系，检出限为5 pmol。 该检测策略在肿瘤生物标志物和其他蛋白质的检测中的应用范围广泛。