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公开(公告)号：US5420879A
公开(公告)日：1995-05-30
申请号：US120757
申请日：1993-09-15
IPC分类号： H01S3/02 , H01S3/0959 , H01S3/16 , H01S5/30
CPC分类号： H01S3/0959 , H01S3/16 , H01S5/30
摘要： A solid state laser includes a diamond crystal as a medium of laser beam emission, which generates a laser beam having a wavelength of 225 to 300 nm through exciton light emission.
摘要翻译： 固体激光器包括作为激光束发射介质的金刚石晶体，其通过激子发光产生具有225至300nm的波长的激光束。
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公开(公告)号：US5252840A
公开(公告)日：1993-10-12
申请号：US697438
申请日：1991-05-09
IPC分类号： H01L21/04 , H01L21/205 , H01L29/16 , H01L29/47 , H01L29/812 , H01L29/872 , H01L29/161 , H01L29/20
CPC分类号： H01L29/872 , H01L21/02376 , H01L21/02381 , H01L21/02433 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L29/1602 , H01L29/6603 , H01L29/66045 , H01L29/812
摘要： A semiconductor device having active parts made from semiconductor diamond. The active parts include a high doped diamond layer for supplying free carriers and a non- or low doped diamond layer for giving the free carriers a conductive region. The free carriers are transferred from the high doped diamond layer to the non- or low doped diamond layer by diffusion or an applied electric field. Since the free carriers move at high speeds in the non- or low doped diamond layer without being scattered by dopant atoms, the semiconductor device is applicable to high frequency devices with stability against a change in temperature.
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3.发明授权Semiconductor device consisting of a semiconductor material having a deep impurity level 失效半导体器件由具有深杂质水平的半导体材料构成
公开(公告)号：US5670796A
公开(公告)日：1997-09-23
申请号：US619105
申请日：1996-03-20
IPC分类号： C30B29/04 , H01L29/12 , H01L29/15 , H01L29/16 , H01L29/167 , H01L29/207 , H01L29/267 , H01L31/0312
CPC分类号： H01L29/1602 , H01L29/157 , H01L29/16 , H01L29/167 , H01L29/207 , H01L29/267
摘要： A semiconductor device has a structure in which doped layers and undoped layers are alternately stacked and is constituted by (a) a semi-insulating substrate, (b) undoped layers consisting of a substantially undoped diamond material, and (c) thin doped layers formed between the undoped layers and consisting of a diamond material doped with B as an impurity. Stable operation characteristics can be obtained within a temperature range from room temperature to a high temperature while a semiconductor material having a deep impurity level is used.
摘要翻译： 半导体器件具有这样的结构，其中掺杂层和未掺杂层交替堆叠并且由（a）半绝缘衬底，（b）由基本上未掺杂的金刚石材料组成的未掺杂层，和（c）形成的薄掺杂层 在未掺杂的层之间并且由掺杂有B作为杂质的金刚石材料组成。 在室温至高温的温度范围内可以获得稳定的操作特性，同时使用具有深度杂质浓度的半导体材料。
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公开(公告)号：US5243199A
公开(公告)日：1993-09-07
申请号：US902788
申请日：1992-06-24
IPC分类号： H01L23/373 , H01L23/66 , H01L29/16 , H01L29/864 , H01L29/872
CPC分类号： H01L29/1602 , H01L23/3732 , H01L23/66 , H01L29/864 , H01L29/872 , H01L2924/0002
摘要： Improvement of a high frequency device having metal layers, active semiconductor layers and other semiconductor layers which make use of carrier avalanche or carrier injection induced by a reverse bias voltage for amplification or oscillation of high frequency waves. The active semiconductor layers are made of semiconductor diamond. High heat conductivity and high insulation breakdown voltage of diamond heighten the output power of oscillation or amplification.
摘要翻译： 改进具有金属层，有源半导体层和其他半导体层的高频器件，其利用由反偏置电压引起的载流子雪崩或载流子注入用于高频波的放大或振荡。 有源半导体层由半导体金刚石制成。 金刚石的高导热性和高绝缘击穿电压提高了振荡或放大的输出功率。
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公开(公告)号：US5500393A
公开(公告)日：1996-03-19
申请号：US184105
申请日：1994-01-21
IPC分类号： H01L21/04 , H01L21/306 , H01L29/16 , H01L29/47 , H01L21/28
CPC分类号： H01L21/02085 , H01L21/0435 , H01L29/1602 , H01L29/47 , Y10S148/017
摘要： The characteristics of a Schottky junction between diamond and metal causes the diode using the Schottky junction to have a large leakage reverse current and n-value far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is pretreated by oxygen plasma or halogen plasma. The oxygen plasma or hydrogen plasma improves the surface state of the diamond by decoupling the surface C--C bonds and endowing the resulting extra bonds with hydrogen atoms, normalizing the superlattice structure at the surface. Pretreatment of the diamond by the oxygen or halogen plasma improves the diode properties; decreasing reverse current, increasing forward current and decreasing the n-value nearer to 1.
摘要翻译： 金刚石与金属之间的肖特基结的特征导致使用肖特基结的二极管具有大的漏电反向电流和n值远大于1.将形成肖特基结的金刚石表面用氧等离子体 或卤素等离子体。 氧等离子体或氢等离子体或氢等离子体通过使表面C-C键解耦并赋予所形成的额外键与氢原子来改善金刚石的表面状态，使表面超晶格结构标准化。 通过氧或卤素等离子体预处理金刚石可提高二极管性能; 减小反向电流，增加正向电流，并将n值减小到更接近1。
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公开(公告)号：US5417798A
公开(公告)日：1995-05-23
申请号：US824091
申请日：1992-01-22
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32623 , H01J37/32697 , H01L21/3065 , H01J2237/3348
摘要： Reactive ion etching of diamond using oxygen plasma roughs the surface of diamond due to the strong bombardment of oxygen ions with various kinetic energy. A metal grid with holes is installed between the oxygen plasma and the diamond. Since the metal grid is biased in order to prevent oxygen plasma from being in contact with the diamond, the oxygen ions which have passed the grid will bombard the surface of the diamond with common, low energy. The etched surface becomes smooth.
摘要翻译： 使用氧等离子体对金刚石的反应离子蚀刻由于用各种动能对氧离子的强烈轰击而使金刚石的表面粗糙。 在氧等离子体和金刚石之间安装有孔洞的金属网格。 由于金属网格被偏置以防止氧等离子体与金刚石接触，所以通过栅格的氧离子将以普通的低能量轰击金刚石的表面。 被蚀刻的表面变得光滑。
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公开(公告)号：US5162886A
公开(公告)日：1992-11-10
申请号：US697441
申请日：1991-05-09
CPC分类号： H01L43/065 , Y10T428/265 , Y10T428/30
摘要： A Hall device having an active part made from semiconductor diamond. The Hall device works even at high temperature or in corrosive atmosphere. Boron doped diamond is suitable for controlling the acceptor concentration.
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公开(公告)号：US20090160307A1
公开(公告)日：2009-06-25
申请号：US12094250
申请日：2007-09-18
CPC分类号： H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
摘要翻译： 一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点 器件，以及金刚石电子源的制造方法。 将柱状金刚石单晶10的一端研磨成平滑的平坦面11，在平坦的平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。 通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。
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9.发明申请Method of fabricating n-type semiconductor diamond, and semiconductor diamond 有权制造n型半导体金刚石和半导体金刚石的方法公开(公告)号：US20050202665A1
公开(公告)日：2005-09-15
申请号：US11013450
申请日：2004-12-17
CPC分类号： C30B25/02 , C30B29/04 , H01L21/02376 , H01L21/0243 , H01L21/02433 , H01L21/02444 , H01L21/02494 , H01L21/02527 , H01L21/02576 , H01L21/02587 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L21/041 , H01L29/66022 , H01L29/66037
摘要： An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.
摘要翻译： 通过处理单晶{100}金刚石衬底10以形成{111}面，然后通过使金刚石外延生长同时n掺杂金刚石{111}面而形成n型金刚石外延层20 。 此外，以上述方式获得的n型半导体金刚石，p型半导体金刚石和非掺杂金刚石以及使用p型单晶{100}金刚石衬底的组合允许 对于pn结型，pnp结型，npn结型和pin结型半导体金刚石。
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公开(公告)号：US06709730B2
公开(公告)日：2004-03-23
申请号：US09995854
申请日：2001-11-29
IPC分类号： B32B900
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
摘要翻译： 制造根据本发明的金刚石产品的方法包括以下步骤：用掩模层（52）形成金刚石基底（50），并用形成有掩模层（52）的金刚石基底（50）蚀刻 由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体，而氟原子浓度相对于混合气体中的原子总数为0.04〜6％的范围。
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