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公开(公告)号:US09213242B2
公开(公告)日:2015-12-15
申请号:US13541167
申请日:2012-07-03
申请人: Yoshihiro Uozumi , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
发明人: Yoshihiro Uozumi , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
CPC分类号: H01L21/67075 , G03F7/162 , G03F7/405 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67098 , H01L21/6715 , H01L21/67739 , H01L21/68
摘要: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.
摘要翻译: 根据一个实施例,公开了一种基板处理方法。 该方法可以包括用第一液体处理底物。 衬底具有形成在衬底的主表面上的结构体。 该方法可以包括通过使第二液体与由第一液体润湿的基底接触而形成支撑结构体的支撑构件,并且通过执行至少一个将第二液体的至少一部分变为固体, 第二液体反应,减少包含在第二液体中的溶剂的量,并使溶解在第二液体中的物质的至少一部分被分离。 该方法可以包括通过将支撑构件的至少一部分从固相改变为气相而不通过液相来移除支撑构件。
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公开(公告)号:US20130008868A1
公开(公告)日:2013-01-10
申请号:US13541167
申请日:2012-07-03
申请人: Yoshihiro UOZUMI , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
发明人: Yoshihiro UOZUMI , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
CPC分类号: H01L21/67075 , G03F7/162 , G03F7/405 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67098 , H01L21/6715 , H01L21/67739 , H01L21/68
摘要: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.
摘要翻译: 根据一个实施例,公开了一种基板处理方法。 该方法可以包括用第一液体处理底物。 衬底具有形成在衬底的主表面上的结构体。 该方法可以包括通过使第二液体与由第一液体润湿的基底接触而形成支撑结构体的支撑构件,并且通过执行至少一个将第二液体的至少一部分变为固体, 第二液体反应,减少包含在第二液体中的溶剂的量,并使溶解在第二液体中的物质的至少一部分被分离。 该方法可以包括通过将支撑构件的至少一部分从固相改变为气相而不通过液相来移除支撑构件。
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公开(公告)号:US20100240219A1
公开(公告)日:2010-09-23
申请号:US12801178
申请日:2010-05-26
申请人: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号: H01L21/306
CPC分类号: H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
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公开(公告)号:US07985683B2
公开(公告)日:2011-07-26
申请号:US12801178
申请日:2010-05-26
申请人: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号: H01L21/312
CPC分类号: H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译: 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案,通过使用化学方法清洗和改变凸形图案的表面,在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面,通过使用水冲洗半导体衬底,干燥半导体衬底,以及从凸形图案的疏水功能表面去除疏水官能团。
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公开(公告)号:US20100075504A1
公开(公告)日:2010-03-25
申请号:US12574543
申请日:2009-10-06
申请人: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号: H01L21/306
CPC分类号: H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译: 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案,通过使用化学方法清洗和改变凸形图案的表面,在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面,通过使用水冲洗半导体衬底,干燥半导体衬底,以及从凸形图案的疏水功能表面去除疏水官能团。
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公开(公告)号:US20100044343A1
公开(公告)日:2010-02-25
申请号:US12545541
申请日:2009-08-21
申请人: Hiroshi Tomita , Linan Ji , Hisashi Okuchi , Tatsuhiko Koide , Hiroyasu Iimori , Hidekazu Hayashi
发明人: Hiroshi Tomita , Linan Ji , Hisashi Okuchi , Tatsuhiko Koide , Hiroyasu Iimori , Hidekazu Hayashi
IPC分类号: C03C15/00
CPC分类号: C03C15/00 , H01L21/67028 , H01L21/67126
摘要: A substrate treatment apparatus for treating a substrate on which a plurality of patterns are formed adjacently, has a first chamber which has resistance to a chemical and cleans the substrate with the chemical; a second chamber which is disposed above or below the first chamber, has higher pressure resistance than the first chamber, and supercritically dries the substrate; and a gate unit which is provided between the first and second chambers and can be opened/closed.
摘要翻译: 一种用于处理其上形成有多个图案的基板的基板处理装置,具有耐化学品的第一室,并且用该化学品清洁该基板; 设置在第一室的上方或下方的第二室具有比第一室更高的耐压性,并且对基板进行超临界干燥; 以及设置在第一和第二室之间并可以打开/关闭的门单元。
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公开(公告)号:US07838425B2
公开(公告)日:2010-11-23
申请号:US12257493
申请日:2008-10-24
申请人: Hiroshi Tomita , Hiroyasu Iimori , Hisashi Okuchi , Tatsuhiko Koide , Linan Ji
发明人: Hiroshi Tomita , Hiroyasu Iimori , Hisashi Okuchi , Tatsuhiko Koide , Linan Ji
IPC分类号: H01L21/306
CPC分类号: H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要: A method of treating the surface of a semiconductor substrate has cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution, removing the chemical solution by using pure water, forming a water repellent protective film on the surface of the semiconductor substrate, rinsing the semiconductor substrate by using pure water, and drying the semiconductor substrate.
摘要翻译: 处理半导体基板的表面的方法通过使用化学溶液清洗具有形成在其上的图案的半导体基板,通过使用纯水去除化学溶液,在半导体基板的表面上形成防水保护膜,冲洗 通过使用纯水对半导体衬底进行干燥,并干燥半导体衬底。
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公开(公告)号:US07749909B2
公开(公告)日:2010-07-06
申请号:US12574543
申请日:2009-10-06
申请人: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号: H01L21/311 , H01L21/365
CPC分类号: H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译: 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案,通过使用化学方法清洗和改变凸形图案的表面,在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面,通过使用水冲洗半导体衬底,干燥半导体衬底,以及从凸形图案的疏水功能表面去除疏水官能团。
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公开(公告)号:US20090311874A1
公开(公告)日:2009-12-17
申请号:US12257493
申请日:2008-10-24
申请人: Hiroshi Tomita , Hiroyasu Iimori , Hisashi Okuchi , Tatsuhiko Koide , Linan Ji
发明人: Hiroshi Tomita , Hiroyasu Iimori , Hisashi Okuchi , Tatsuhiko Koide , Linan Ji
IPC分类号: H01L21/31
CPC分类号: H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要: A method of treating the surface of a semiconductor substrate has cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution, removing the chemical solution by using pure water, forming a water repellent protective film on the surface of the semiconductor substrate, rinsing the semiconductor substrate by using pure water, and drying the semiconductor substrate.
摘要翻译: 处理半导体基板的表面的方法通过使用化学溶液清洗具有形成在其上的图案的半导体基板,通过使用纯水去除化学溶液,在半导体基板的表面上形成防水保护膜,冲洗 通过使用纯水对半导体衬底进行干燥,并干燥半导体衬底。
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公开(公告)号:US07097784B2
公开(公告)日:2006-08-29
申请号:US10742992
申请日:2003-12-23
CPC分类号: H01L21/67248 , H01L21/31111 , H01L21/67086
摘要: A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.
摘要翻译: 一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法,包括选择适合于半导体晶片的蚀刻的预定蚀刻程序,将半导体晶片的数量计数为 在蚀刻之前将其装入蚀刻液中,基于计数得出蚀刻剂的温度下降,将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电,以蚀刻半导体晶片,并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。
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