Abstract:
A capacitive device is provided. The capacitive device includes a first electrode and a second electrode below the first electrode and spaced apart from the first electrode, wherein at least one of the first electrode and the second electrode includes a plurality of conductive step sections, the plurality of conductive step sections having different heights. The capacitive device also includes an insulating region between the first electrode and the second electrode; and at least one slot formed on one of the first electrode and the second electrode.
Abstract:
A capacitor device is provided. The capacitor device includes at least one capacitor. The capacitor device also includes a first capacitor and a first filter coupling the first capacitor and a conductive region, wherein the first capacitor has a first resonance frequency and the first filter is configured to operate at a first frequency band covering the first resonance frequency.
Abstract:
A capacitor device is provided. The capacitor device includes at least one capacitor. The capacitor device also includes a first capacitor and a first filter coupling the first capacitor and a conductive region, wherein the first capacitor has a first resonance frequency and the first filter is configured to operate at a first frequency band covering the first resonance frequency.
Abstract:
The disclosure relates to a power device package structure. By employing the metal substrate of the power device package structure serve as a bottom electrode of a capacitor, the capacitor is integrated into the power device package structure. A dielectric material layer and a upper metal layer sequentially disposed on the metal substrate.
Abstract:
A capacitive device is provided. The capacitive device includes a first electrode and a second electrode below the first electrode and spaced apart from the first electrode, wherein at least one of the first electrode and the second electrode includes a plurality of conductive step sections, the plurality of conductive step sections having different heights. The capacitive device also includes an insulating region between the first electrode and the second electrode; and at least one slot formed on one of the first electrode and the second electrode.
Abstract:
A coaxial via hole structure used in a carrier is disclosed. The coaxial via hole includes an outer cylinder-shaped conductor, an inner cylinder-shaped conductor and an intermediate fill. The outer cylinder-shaped conductor extends along a first direction. The inner cylinder-shaped conductor is disposed in the outer cylinder-shaped conductor and also extends along the first direction. The intermediate fill is between the outer cylinder-shaped conductor and the inner cylinder-shaped conductor and is made of insulating material or electrical-resistant material. The coaxial via hole structure can be applied as a capacitor or a resistor and has the function of signal shielding.
Abstract:
An embedded capacitor device within a circuit board having an integrated circuitry thereon is provided. The circuit board has a common coupling area under the integrated circuitry. The embedded capacitor device includes a first capacitor section providing at least one capacitor to a first terminal set of the integrated circuitry and a second capacitor section providing at least one capacitor to a second terminal set of the integrated circuitry. A portion of the first capacitor section is in the common coupling area and has its coupling to the first terminal set located in the common coupling area. Similarly, a portion of the second capacitor section is in the common coupling area and has its coupling to the second terminal set located in the common coupling area.
Abstract:
A unitary buried array capacitor and microelectronic structures incorporating such capacitors are disclosed. A unitary buried array capacitor can be formed by a top layer of electrode, a middle layer of dielectric, and a bottom layer of electrode. A first electrode lead, a second electrode lead and at least one interconnect line pass through the three layers while only the first electrode lead making electrical contact with the top layer of electrode and only the second electrode lead making electrical contact with the bottom electrode.
Abstract:
The disclosure relates to a power device package structure. By employing the metal substrate of the power device package structure serve as a bottom electrode of a capacitor, the capacitor is integrated into the power device package structure. A dielectric material layer and a upper metal layer sequentially disposed on the metal substrate.
Abstract:
An embedded capacitor device within a circuit board having an integrated circuitry thereon is provided. The circuit board has a common coupling area under the integrated circuitry. The embedded capacitor device includes a first capacitor section providing at least one capacitor to a first terminal set of the integrated circuitry and a second capacitor section providing at least one capacitor to a second terminal set of the integrated circuitry. A portion of the first capacitor section is in the common coupling area and has its coupling to the first terminal set located in the common coupling area. Similarly, a portion of the second capacitor section is in the common coupling area and has its coupling to the second terminal set located in the common coupling area.