Batch process providing beam leads for microelectronic devices having
metallized contact pads
    2.
    发明授权
    Batch process providing beam leads for microelectronic devices having metallized contact pads 失效
    分批处理为具有金属化接触焊盘的微电子器件提供光束引线

    公开(公告)号:US4086375A

    公开(公告)日:1978-04-25

    申请号:US629736

    申请日:1975-11-07

    IPC分类号: H01L21/033 B05D5/12 H01L21/00

    CPC分类号: H01L21/033

    摘要: A monometallic batch process for forming beam leads of a preferred metal such as aluminum or gold. The process is applied to a wafer of finished microelectronic devices already having metal contact pads of the same preferred metal. Where aluminum is the desired metal, high deposition rates are used to minimize aluminum oxide contamination. High yield is achieved by forming the beam leads to have an elevated cantilevered configuration, by deep scribing of the wafer and, when desired, by providing an energy absorbing cushion to reduce the effect of collisions between chip edges and beam leads.

    摘要翻译: 用于形成诸如铝或金的优选金属的光束引线的单金属间隔工艺。 该方法应用于已经具有相同优选金属的金属接触垫的成品微电子器件的晶片。 当铝是所需的金属时,使用高沉积速率来最小化氧化铝污染。 通过将晶片引线形成为具有升高的悬臂结构,通过对晶片进行深刻划线,并且在需要时,通过提供能量吸收垫来减小芯片边缘和光束引线之间的碰撞的影响,可实现高产量。

    Composition for boundary lubricant and method
    4.
    发明授权
    Composition for boundary lubricant and method 失效
    边界润滑剂和方法的组成

    公开(公告)号:US3983270A

    公开(公告)日:1976-09-28

    申请号:US409848

    申请日:1973-10-26

    摘要: A composition for forming a boundary lubricant for metal and ceramic wear surfaces consisting of transition element complexes, including those of the higher molecular weight carboxylic acids such as the long chain fatty acids (C.sub.x H.sub.2x.sub.+1 COOH; x = 8, 9, 10, . . . 29). The transition elements used here are metals such as Cr, Mn, Fe, Co, Ni or Al that can form coordination complexes. Exemplary metal complexes are chromium stearate and chromium behenate.An exemplary complex may be prepared by (1) reducing chromium trioxide by a reducing alcohol in a low molecular weight organic acid to produce chromium acetate; then 2 hydrating and olating the chromium acetate. A solution containing a maximum concentration of about 11 weight percent of the transition metal complex in a solvent such as trichloroethylene is applied as a thin layer onto a wear surface, then the layer is heated for 1-4 hours at a temperature at or above 70.degree.C and, within the approximate range 70.degree.-160.degree.C. The transition metal complex chemically adheres to the wear surface, and is cross-linked by the heat treatment, to form an anchored, polymerized array of molecules that provides a hydrophobic, durable, boundary lubricant having a low coefficient of friction.The transition metal complex solution may be applied to non-porous wear surfaces or, alternatively, may be impregnated into chrome oxide coatings or other porous refractory coatings on wear surfaces to form a porosity-filling boundary lubricant thereon. The lubricant decreases the clearance required between porous bearing surfaces, decreases the formation of corrosion cells, and lowers the coefficient of friction. The preferred amount of fatty acid or organic polyacid that can be stably incorporated into a complex chromium soap for use as a porosity-filling lubricant, that is, the optimum fatty acid mol/chromium gm-atom ratio, is approximately 1-1.2/1.

    摘要翻译: 用于形成由过渡元素配合物组成的金属和陶瓷耐磨表面的边界润滑剂的组合物,包括较高分子量羧酸如长链脂肪酸(CxH2x + 1COOH; x = 8,9,10, 29)。 这里使用的过渡元素是可以形成配位络合物的金属,例如Cr,Mn,Fe,Co,Ni或Al。 示例性的金属络合物是硬脂酸铬和山嵛酸铬。

    Moisture sensor for electronic modules
    6.
    发明授权
    Moisture sensor for electronic modules 失效
    电子模块用湿度传感器

    公开(公告)号:US5606264A

    公开(公告)日:1997-02-25

    申请号:US426044

    申请日:1995-04-21

    IPC分类号: G01N27/04 G01R31/28 H01C13/00

    CPC分类号: G01R31/2884 G01N27/048

    摘要: Seepage of water and other impurities into hermetically sealed on plastic encapsulated modules leads to eventual device failure, as conductor material corrodes and opens, or electromigrates to establish conductive trails across a substrate, shorting the conductors. To forewarn of such failure, a sensing device defined as a separate chip is packaged in the same module with the circuit to be checked, with pinouts that can be tested with a circuit that is usually external. The sensor makes use of the moisture-induced migratory behavior that causes the problem, using a highly migratory metal or alloy to define paired electrodes spaced as closely as 2 micrometers apart. The metal of the electrodes undergoes rapid ionization and migration in the presence of trace amounts of moisture, dissolved ionic contaminants, and a small potential difference across the electrodes. Two volts applied to the sensor conductors by the sensor circuit will output a voltage if even a minute current is flowing between the electrodes permitting "go/no-go" decisions to be made regarding use of the module. The moisture which actuates the sensor, triggers the circuit long before the level of seepage and electromigratic represents present danger of circuit failure, and long before other types of sensors would indicate the existence of a problem.

    摘要翻译: 水和其他杂质渗入密封在塑料封装的模块上导致最终的器件故障,因为导体材料腐蚀和打开,或电位迁移以在基板上建立导电迹线,使导体短路。 为了预警这种故障,定义为单独芯片的感测装置与要检查的电路封装在相同的模块中,可以使用通常是外部电路的引脚排列进行测试。 传感器利用导致问题的水分诱导的迁移行为,使用高度迁移的金属或合金来定义间隔为2微米的配对电极。 电极的金属在痕量的水分,溶解的离子污染物和电极两端的电位差很小的情况下经历快速电离和迁移。 传感器电路施加到传感器导体上的两个电压将在电极之间甚至一分钟的电流流动时输出电压,从而允许对模块的使用做出“去/不去”决定。 启动传感器的水分在渗漏和电位水平表现出电路故障的危险之前很长时间才能触发电路,并且很久以前,其他类型的传感器将表明存在问题。

    Reverse-engineering resistant encapsulant for microelectric device
    7.
    发明授权
    Reverse-engineering resistant encapsulant for microelectric device 失效
    用于微电子器件的反向工程抗性密封剂

    公开(公告)号:US5030796A

    公开(公告)日:1991-07-09

    申请号:US392799

    申请日:1989-08-11

    IPC分类号: H01L23/24 H01L23/552

    摘要: A microelectronic device is rendered resistant to reverse engineering by encapsulating it in a dual layer encapsulant. The inner layer is compatible with the operation of the device, and has a greater resistance to chemical attack then does the device. The outer layer includes a filler of barium sulfate and gadolinium oxide, to absorb X-rays and N-rays respectively, is more resistant to chemical attack than the inner layer, and includes a groove around its periphery, to preferentially allow chemical attack radially. A full chemical attack damages the device beyond usable inspection, but a partial chemical attack is insufficient to remove X-ray and N-ray concealment.

    摘要翻译: 微电子器件通过将其封装在双层密封剂中而被抵抗逆向工程。 内层与设备的操作兼容,并且具有比化学侵蚀更大的阻力,然后是设备。 外层包括硫酸钡和氧化钆的吸收剂,分别吸收X射线和N射线,比内层更耐化学侵蚀,并且包括围绕其周边的槽,以优先径向地进行化学侵蚀。 全面的化学攻击会对设备造成破坏,超出可用检测范围,但部分化学侵蚀不足以清除X射线和N光线的隐藏。