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    Methods of manufacturing semiconductor devices
    3.
    发明授权
    Methods of manufacturing semiconductor devices 有权
    制造半导体器件的方法

    公开(公告)号：US08445367B2

    公开(公告)日：2013-05-21

    申请号：US13287509

    申请日：2011-11-02

    申请人： Jin-Tae Noh ,  Hun-Hyeong Lim ,  Ki-Hyun Hwang ,  Jin-Gyun Kim ,  Sang-Ryol Yang

    发明人： Jin-Tae Noh ,  Hun-Hyeong Lim ,  Ki-Hyun Hwang ,  Jin-Gyun Kim ,  Sang-Ryol Yang

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L27/1157 ,  H01L27/10855 ,  H01L27/11582

    摘要： In a method of manufacturing a semiconductor device, a plurality of sacrificial layers and a plurality of insulating interlayers are repeatedly and alternately on a substrate. The insulating interlayers include a different material from a material of the sacrificial layers. At least one opening through the insulating interlayers and the sacrificial layers are formed. The at least one opening exposes the substrate. The seed layer is formed on an inner wall of the at least one opening using a first silicon source gas. A polysilicon channel is formed in the at least one opening by growing the seed layer. The sacrificial layers are removed to form a plurality of grooves between the insulating interlayers. A plurality of gate structures is formed in the grooves, respectively.

    摘要翻译： 在制造半导体器件的方法中，多个牺牲层和多个绝缘中间层在衬底上重复交替。 绝缘夹层包括与牺牲层的材料不同的材料。 通过绝缘夹层和牺牲层形成至少一个开口。 至少一个开口露出基板。 种子层使用第一硅源气体形成在至少一个开口的内壁上。 通过种植种子层在至少一个开口中形成多晶硅沟道。 去除牺牲层以在绝缘夹层之间形成多个凹槽。 在槽中分别形成有多个栅极结构。

    Methods of fabricating silicon oxide layers using inorganic silicon precursors and methods of fabricating semiconductor devices including the same
    7.
    发明授权
    Methods of fabricating silicon oxide layers using inorganic silicon precursors and methods of fabricating semiconductor devices including the same 失效
    使用无机硅前体制造氧化硅层的方法和制造包括其的半导体器件的方法

    公开(公告)号：US08227357B2

    公开(公告)日：2012-07-24

    申请号：US12730406

    申请日：2010-03-24

    申请人： In-Sun Yi ,  Ki-Hyun Hwang ,  Jin-Tae Noh ,  Jae-Young Ahn ,  Si-Young Choi

    发明人： In-Sun Yi ,  Ki-Hyun Hwang ,  Jin-Tae Noh ,  Jae-Young Ahn ,  Si-Young Choi

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/28273 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/28282 ,  H01L21/3185 ,  H01L27/11521 ,  H01L27/11568

    摘要： Methods of fabricating a silicon oxide layer using an inorganic silicon precursor and methods of fabricating a semiconductor device using the same are provided. The methods of fabricating a semiconductor device include forming a tunnel insulating layer and a charge storage layer on a substrate; forming a dielectric layer structure on the charge storage layer using an atomic layer deposition (ALD) method, the dielectric layer structure including a first dielectric layer formed of silicon oxide, a second dielectric layer on the first dielectric layer formed of a material different from the material forming the first dielectric layer, and a third dielectric layer formed of the silicon oxide on the second dielectric layer; and forming a control gate on the dielectric layer structure. The first and third dielectric layers formed of the silicon oxide are formed using a first gas including an inorganic silicon precursor, a second gas including hydrogen gas or a hydrogen component, and a third gas including an oxide gas.

    摘要翻译： 提供了使用无机硅前体制造氧化硅层的方法和使用其制造半导体器件的方法。 制造半导体器件的方法包括在衬底上形成隧道绝缘层和电荷存储层; 使用原子层沉积（ALD）方法在所述电荷存储层上形成电介质层结构，所述电介质层结构包括由氧化硅形成的第一电介质层，所述第一电介质层上的第二电介质层由不同于 形成第一电介质层的材料和由第二电介质层上的氧化硅形成的第三电介质层; 以及在介电层结构上形成控制栅极。 由氧化硅形成的第一和第三电介质层使用包括无机硅前体的第一气体，包括氢气或氢组分的第二气体和包括氧化物气体的第三气体形成。

    METHODS OF FABRICATING SILICON OXIDE LAYERS USING INORGANIC SILICON PRECURSORS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING THE SAME
    8.
    发明申请
    METHODS OF FABRICATING SILICON OXIDE LAYERS USING INORGANIC SILICON PRECURSORS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING THE SAME 失效
    使用无机硅前驱体制造氧化硅层的方法和制备包括其的半导体器件的方法

    公开(公告)号：US20100248465A1

    公开(公告)日：2010-09-30

    申请号：US12730406

    申请日：2010-03-24

    申请人： In-Sun Yi ,  Ki-Hyun Hwang ,  Jin-Tae Noh ,  Jae-Young Ahn ,  Si-Young Choi

    发明人： In-Sun Yi ,  Ki-Hyun Hwang ,  Jin-Tae Noh ,  Jae-Young Ahn ,  Si-Young Choi

    IPC分类号： H01L21/336 ,  H01L21/31 ,  H01L21/3205

    CPC分类号： H01L21/28273 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/28282 ,  H01L21/3185 ,  H01L27/11521 ,  H01L27/11568

    摘要： Methods of fabricating a silicon oxide layer using an inorganic silicon precursor and methods of fabricating a semiconductor device using the same are provided. The methods of fabricating a semiconductor device include forming a tunnel insulating layer and a charge storage layer on a substrate; forming a dielectric layer structure on the charge storage layer using an atomic layer deposition (ALD) method, the dielectric layer structure including a first dielectric layer formed of silicon oxide, a second dielectric layer on the first dielectric layer formed of a material different from the material forming the first dielectric layer, and a third dielectric layer formed of the silicon oxide on the second dielectric layer; and forming a control gate on the dielectric layer structure. The first and third dielectric layers formed of the silicon oxide are formed using a first gas including an inorganic silicon precursor, a second gas including hydrogen gas or a hydrogen component, and a third gas including an oxide gas.

    摘要翻译： 提供了使用无机硅前体制造氧化硅层的方法和使用其制造半导体器件的方法。 制造半导体器件的方法包括在衬底上形成隧道绝缘层和电荷存储层; 使用原子层沉积（ALD）方法在所述电荷存储层上形成电介质层结构，所述电介质层结构包括由氧化硅形成的第一电介质层，所述第一电介质层上的第二电介质层由不同于 形成第一电介质层的材料和由第二电介质层上的氧化硅形成的第三电介质层; 以及在介电层结构上形成控制栅极。 由氧化硅形成的第一和第三电介质层使用包括无机硅前体的第一气体，包括氢气或氢组分的第二气体和包括氧化物气体的第三气体形成。

    Semiconductor interconnection structures and capacitors including poly-SiGe layers and metal contact plugs
    9.
    发明授权
    Semiconductor interconnection structures and capacitors including poly-SiGe layers and metal contact plugs 有权
    半导体互连结构和包括多晶硅层和金属接触插头的电容器

    公开(公告)号：US07750385B2

    公开(公告)日：2010-07-06

    申请号：US11842320

    申请日：2007-08-21

    申请人： Eun-ae Chung ,  Ki-sun Kim ,  Young-sun Kim ,  Jin-tae Noh

    发明人： Eun-ae Chung ,  Ki-sun Kim ,  Young-sun Kim ,  Jin-tae Noh

    IPC分类号： H01L27/108

    CPC分类号： H01L28/75 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02667 ,  H01L27/10852

    摘要： A semiconductor device includes a lower electrode of a capacitor, a dielectric layer disposed on the lower electrode, and an upper electrode of the capacitor disposed on the dielectric layer. The upper electrode includes a doped poly-Si1-xGex layer. An interlayer insulating layer is disposed on the doped poly-Si1-xGex layer and has a contact hole partially exposing the doped poly-Si1-xGex layer. A metal contact plug is in the contact hole and an interconnection layer is disposed on the interlayer insulating layer and connected to the metal contact plug. Related interconnection structures and fabrication methods are also disclosed.

    摘要翻译： 半导体器件包括电容器的下电极，设置在下电极上的电介质层和设置在电介质层上的电容器的上电极。 上电极包括掺杂的多晶Si1-xGex层。 在掺杂的多晶Si1-xGex层上设置层间绝缘层，并且具有部分地暴露掺杂的多晶Si1-xGex层的接触孔。 金属接触插塞在接触孔中，并且互连层设置在层间绝缘层上并连接到金属接触插塞。 还公开了相关的互连结构和制造方法。

    Capacitor of semiconductor device and method of fabricating the same
    10.
    发明授权
    Capacitor of semiconductor device and method of fabricating the same 有权
    半导体器件的电容器及其制造方法

    公开(公告)号：US07442981B2

    公开(公告)日：2008-10-28

    申请号：US11316487

    申请日：2005-12-21

    申请人： Gab-Jin Nam ,  Young-Sun Kim ,  Cha-Young Yoo ,  Jong-Cheol Lee ,  Jin-Tae Noh ,  Jae-Young Ahn ,  Young-Geun Park ,  Jae-Hyoung Choi ,  Jae-Hyun Yeo

    发明人： Gab-Jin Nam ,  Young-Sun Kim ,  Cha-Young Yoo ,  Jong-Cheol Lee ,  Jin-Tae Noh ,  Jae-Young Ahn ,  Young-Geun Park ,  Jae-Hyoung Choi ,  Jae-Hyun Yeo

    IPC分类号： H01L27/108 ,  H01L29/94

    CPC分类号： H01L28/75 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

    摘要： Provided is a capacitor of a semiconductor device and a method of fabricating the same. In one embodiment, the capacitor includes a lower electrode formed on a semiconductor substrate; a dielectric layer formed on the lower electrode; and an upper electrode that is formed on the dielectric layer. The upper electrode includes a first conductive layer, a second conductive layer, and a third conductive layer stacked sequentially. The first conductive layer comprises a metal layer, a conductive metal oxide layer, a conductive metal nitride layer, or a conductive metal oxynitride layer. The second conductive layer comprises a doped polysilicon germanium layer. The third conductive layer comprises a material having a lower resistance than that of the second conductive layer.

    摘要翻译： 提供一种半导体器件的电容器及其制造方法。 在一个实施例中，电容器包括形成在半导体衬底上的下电极; 形成在下电极上的电介质层; 以及形成在电介质层上的上电极。 上电极包括依次堆叠的第一导电层，第二导电层和第三导电层。 第一导电层包括金属层，导电金属氧化物层，导电金属氮化物层或导电金属氮氧化物层。 第二导电层包括掺杂多晶硅锗层。 第三导电层包括具有比第二导电层的电阻低的电阻的材料。