公开(公告)号：US09188875B2

公开(公告)日：2015-11-17

申请号：US13132011

申请日：2009-12-01

申请人： Hugo Augustinus Joseph Cramer ,  Maurits Van Der Schaar

发明人： Hugo Augustinus Joseph Cramer ,  Maurits Van Der Schaar

IPC分类号： G03F7/20 ,  G01N21/47

CPC分类号： G03F7/70633 ,  G01N21/4785 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70625

摘要： Disclosed are methods, apparatuses, and lithographic systems for calibrating an inspection apparatus. Radiation is projected onto a pattern in a target position of a substrate. By making a plurality of measurements of the pattern and comparing the measured first or higher diffraction orders of radiation reflected from the pattern of different measurements, a residual error indicative of the error in a scatterometer may be calculated. This error is an error in measurements of substrate parameters caused by irregularities of the scatterometer. The residual error may manifest itself as an asymmetry in the diffraction spectra.

摘要翻译： 公开了用于校准检查装置的方法，装置和光刻系统。 辐射被投影到基板的目标位置的图案上。 通过对图案进行多次测量并比较从不同测量图案反射的辐射的测量的第一或更高的衍射级数，可以计算指示散射仪中的误差的残差。 该误差是由散射仪的不规则引起的衬底参数的测量误差。 残余误差可能表现为衍射光谱中的不对称性。

公开(公告)号：US08891061B2

公开(公告)日：2014-11-18

申请号：US13062861

申请日：2009-10-02

申请人： Christian Marinus Leewis ,  Hugo Augustinus Joseph Cramer ,  Marcus Adrianus Van De Kerkhof ,  Johannes Anna Quaedackers ,  Christine Corinne Mattheus

发明人： Christian Marinus Leewis ,  Hugo Augustinus Joseph Cramer ,  Marcus Adrianus Van De Kerkhof ,  Johannes Anna Quaedackers ,  Christine Corinne Mattheus

IPC分类号： G03F7/20

CPC分类号： G03F7/70641 ,  G03F1/38 ,  G03F7/706 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70675 ,  G03F7/70683

摘要： In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

摘要翻译： 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何性质（例如间距）在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构构成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。

公开(公告)号：US08830447B2

公开(公告)日：2014-09-09

申请号：US13264256

申请日：2010-05-04

申请人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

发明人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

IPC分类号： G03B27/52 ,  G03F7/20

CPC分类号： G03F7/70641

摘要： A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

摘要翻译： 使用一种方法来确定在光刻工艺中使用的光刻设备在基板上的焦点。 光刻工艺用于在衬底上形成至少两个周期性结构。 每个结构具有至少一个特征，其具有相对的侧壁角度之间的不对称性，所述相对侧壁角度随着光刻设备在基底上的焦点的不同功能而变化。 测量通过将辐射束引导到至少两个周期性结构上产生的光谱，并且确定不对称性的比率。 使用每个结构的焦点和侧壁不对称之间的比率和关系来确定光刻设备在基底上的焦点。

公开(公告)号：US08520212B2

公开(公告)日：2013-08-27

申请号：US13000212

申请日：2009-07-10

申请人： Willem Marie Julia Marcel Coene ,  Hugo Augustinus Joseph Cramer ,  Irwan Dani Setija

发明人： Willem Marie Julia Marcel Coene ,  Hugo Augustinus Joseph Cramer ,  Irwan Dani Setija

IPC分类号： G01N21/55

CPC分类号： G01N21/55 ,  G03F7/70625

摘要： Scatterometry method and apparatus are useful in a lithographic apparatus and device manufacturing. A back focal plane diffraction intensity image of a measurement projection system configured to project a radiation beam onto a target portion of a substrate is measured. A beam of radiation having a first wavelength is directed to the substrate. A diffraction image of a zeroth diffraction order and higher order diffraction from a diffraction structure in the substrate is provided. A first layer (4) of the diffractionstructure provides a diffraction image having only a zeroth diffraction order. A second layer (5) has a periodic structure (6a, 6b) configured such that a lowest spatial frequency of the periodic structure is lower than spatial frequencies of interest of the first structure. From the diffraction image originating from diffraction of the radiation beam in both the first and second layer a critical dimension metrology parameter is determined.

摘要翻译： 散射测定方法和装置在光刻设备和器件制造中是有用的。 测量被配置为将辐射束投影到基板的目标部分上的测量投影系统的后焦平面衍射强度图像。 具有第一波长的辐射束被引导到基板。 提供了衍射图像的零衍射级和衍射结构的基底中的高阶衍射。 衍射结构的第一层（4）提供仅具有零级衍射级的衍射图像。 第二层（5）具有周期性结构（6a，6b），其被配置为使得周期性结构的最低空间频率低于第一结构的感兴趣的空间频率。 从第一和第二层中的辐射束的衍射衍射图像，确定临界尺寸计量参数。

公开(公告)号：US20110304851A1

公开(公告)日：2011-12-15

申请号：US13000212

申请日：2009-07-10

申请人： Willem Marie Julia Marcel Coene ,  Hugo Augustinus Joseph Cramer ,  Irwan Dani Setija

发明人： Willem Marie Julia Marcel Coene ,  Hugo Augustinus Joseph Cramer ,  Irwan Dani Setija

IPC分类号： G01N21/55 ,  G03F7/20

CPC分类号： G01N21/55 ,  G03F7/70625

摘要： Scatterometry method and apparatus are useful in a lithographic apparatus and device manufacturing. A back focal plane diffraction intensity image of a measurement projection system configured to project a radiation beam onto a target portion of a substrate is measured. A beam of radiation having a first wavelength is directed to the substrate. A diffraction image of a zeroth diffraction order and higher order diffraction from a diffraction structure in the substrate is provided. A first layer (4) of the diffractionstructure provides a diffraction image having only a zeroth diffraction order. A second layer (5) has a periodic structure (6a, 6b) configured such that a lowest spatial frequency of the periodic structure is lower than spatial frequencies of interest of the first structure. From the diffraction image originating from diffraction of the radiation beam in both the first and second layer a critical dimension metrology parameter is determined.

摘要翻译： 散射测定方法和装置在光刻设备和器件制造中是有用的。 测量被配置为将辐射束投影到基板的目标部分上的测量投影系统的后焦平面衍射强度图像。 具有第一波长的辐射束被引导到基板。 提供了衍射图像的零衍射级和衍射结构的基底中的高阶衍射。 衍射结构的第一层（4）提供仅具有零级衍射级的衍射图像。 第二层（5）具有周期性结构（6a，6b），其被配置为使得周期性结构的最低空间频率低于第一结构的感兴趣的空间频率。 从第一和第二层中的辐射束的衍射衍射图像，确定临界尺寸计量参数。

公开(公告)号：US20110249247A1

公开(公告)日：2011-10-13

申请号：US13140292

申请日：2009-12-17

申请人： Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

发明人： Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

IPC分类号： G03B27/52 ,  B32B3/00 ,  G03F1/00

CPC分类号： G03F7/70683 ,  G03F1/14 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70641 ,  Y10T428/24802

摘要： In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures.

摘要翻译： 为了确定曝光装置是否输出正确的辐射剂量，并且曝光装置的投影系统正确地对准辐射，在掩模上使用测试图案将特定的标记印刷到基板上。 该标记可以通过诸如散射仪的检查装置来测量，以确定是否存在焦点，剂量和其它相关属性的误差。 测试图案被布置成使得可以通过测量使用掩模曝光的图案的性质容易地确定焦点和剂量的变化。 掩模的测试图案被布置成使得其在基板表面上产生标记图案。 标记图案包含具有至少两个可测量的侧壁角度的结构。 结构的侧壁角度之间的不对称性与来自曝光设备的曝光辐射的焦点（或散焦）有关。 由此可以通过测量印刷的标记图案结构的侧壁角度的不对称来确定散焦的程度。

公开(公告)号：US20110026032A1

公开(公告)日：2011-02-03

申请号：US12920984

申请日：2009-03-30

申请人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Marcus Adrianus Van De Kerkhof ,  Henricus Petrus Maria Pellemans ,  Martin Ebert

发明人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Marcus Adrianus Van De Kerkhof ,  Henricus Petrus Maria Pellemans ,  Martin Ebert

IPC分类号： G01N21/47

CPC分类号： G01N21/9501 ,  G01N21/47 ,  G01N21/95607 ,  G01N2021/8845 ,  G03F7/70625

摘要： A method of assessing a model of a substrate is presented. A scatterometry measurement is taken using radiation at a first wavelength. The wavelength of the radiation is then changed and a further scatterometry measurement taken. If the scatterometry measurements are consistent across a range of wavelengths then the model is sufficiently accurate. However, if the scatterometry measurements change as the wavelength changes then the model of the substrate is not sufficiently accurate.

摘要翻译： 提出了一种评估底物模型的方法。 使用第一波长的辐射进行散射测量。 然后改变辐射的波长，并进行进一步的散射测量。 如果散射测量在波长范围内是一致的，则模型是足够准确的。 然而，如果散射测量值随着波长的变化而变化，则衬底的模型不够准确。

公开(公告)号：US07853215B2

公开(公告)日：2010-12-14

申请号：US10683627

申请日：2003-10-10

申请人： Wojciech Kurek ,  Joseph Cramer, III ,  Bin Hu

发明人： Wojciech Kurek ,  Joseph Cramer, III ,  Bin Hu

IPC分类号： H04B17/00

CPC分类号： H04W36/0055 ,  H04W36/18 ,  H04W48/16

摘要： A communication circuit (10) and method updates an active link set list (50) in an asynchronous wireless communication system. In one embodiment, the communication circuit (10) may be a wireless device (600) or any other suitable communication device. The communication circuit (10) includes candidate reference link determination circuitry (30) to receive an active link set update message (60) and in response, to create the candidate list of reference links (20) from the active link set list (50). The candidate reference link determination circuitry (30) creates the candidate list of reference links based on, for example, an indication in the received active link set update message (60) to retain links from the active link set list (50).

摘要翻译： 通信电路（10）和方法更新异步无线通信系统中的主动链路集列表（50）。 在一个实施例中，通信电路（10）可以是无线设备（600）或任何其它合适的通信设备。 通信电路（10）包括用于接收活动链路组更新消息（60）的候选参考链路确定电路（30），并且响应于从主动链路集列表（50）创建参考链路（20）的候选列表， 。 候选参考链路确定电路（30）基于例如接收到的活动链路集更新消息（60）中的指示来保留来自活动链路集列表（50）的链路来创建参考链路的候选列表。

公开(公告)号：US07605907B2

公开(公告)日：2009-10-20

申请号：US11727648

申请日：2007-03-27

申请人： Hugo Augustinus Joseph Cramer ,  Antoine Gaston Marie Kiers ,  Gerardus Maria Johannes Wijnand Janssen

发明人： Hugo Augustinus Joseph Cramer ,  Antoine Gaston Marie Kiers ,  Gerardus Maria Johannes Wijnand Janssen

IPC分类号： G03B27/42 ,  G03B27/32

CPC分类号： G03F7/70425 ,  G03F7/70516 ,  G03F7/70616

摘要： The present invention provides a method for forming a substrate for use in calibrating a metrology tool in order to compensate for orientation-dependent variations within the metrology tool.

摘要翻译： 本发明提供了一种用于形成用于校准计量工具的基板的方法，以便补偿计量工具内的取向相关变化。

公开(公告)号：US20070046954A1

公开(公告)日：2007-03-01

申请号：US11210113

申请日：2005-08-24

申请人： Hugo Joseph Cramer ,  Erik Van Brederode

发明人： Hugo Joseph Cramer ,  Erik Van Brederode

IPC分类号： G01B11/14

CPC分类号： G03F7/70625 ,  G03F7/70516 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of matching CD-SEM's to ensure consistent measurements over an installed base of SEM's is disclosed by measuring with each of a plurality of scanning electron microscopes the feature size of resist features in at least two positions on the substrate such that field-to-field variations, and reticle and exposure tool non-uniformities are efficiently suppressed in the matching result.

摘要翻译： 通过用多个扫描电子显微镜中的每一个测量基板上的至少两个位置中的抗蚀剂特征的特征尺寸来公开将匹配CD-SEM以确保相对于SEM的安装基底的一致测量的方法， 在匹配结果中有效地抑制了场变化，掩模版和曝光工具的不均匀性。