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公开(公告)号：US08520212B2
公开(公告)日：2013-08-27
申请号：US13000212
申请日：2009-07-10
IPC分类号： G01N21/55
CPC分类号： G01N21/55 , G03F7/70625
摘要： Scatterometry method and apparatus are useful in a lithographic apparatus and device manufacturing. A back focal plane diffraction intensity image of a measurement projection system configured to project a radiation beam onto a target portion of a substrate is measured. A beam of radiation having a first wavelength is directed to the substrate. A diffraction image of a zeroth diffraction order and higher order diffraction from a diffraction structure in the substrate is provided. A first layer (4) of the diffractionstructure provides a diffraction image having only a zeroth diffraction order. A second layer (5) has a periodic structure (6a, 6b) configured such that a lowest spatial frequency of the periodic structure is lower than spatial frequencies of interest of the first structure. From the diffraction image originating from diffraction of the radiation beam in both the first and second layer a critical dimension metrology parameter is determined.
摘要翻译： 散射测定方法和装置在光刻设备和器件制造中是有用的。 测量被配置为将辐射束投影到基板的目标部分上的测量投影系统的后焦平面衍射强度图像。 具有第一波长的辐射束被引导到基板。 提供了衍射图像的零衍射级和衍射结构的基底中的高阶衍射。 衍射结构的第一层（4）提供仅具有零级衍射级的衍射图像。 第二层（5）具有周期性结构（6a，6b），其被配置为使得周期性结构的最低空间频率低于第一结构的感兴趣的空间频率。 从第一和第二层中的辐射束的衍射衍射图像，确定临界尺寸计量参数。
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公开(公告)号：US20110304851A1
公开(公告)日：2011-12-15
申请号：US13000212
申请日：2009-07-10
CPC分类号： G01N21/55 , G03F7/70625
摘要： Scatterometry method and apparatus are useful in a lithographic apparatus and device manufacturing. A back focal plane diffraction intensity image of a measurement projection system configured to project a radiation beam onto a target portion of a substrate is measured. A beam of radiation having a first wavelength is directed to the substrate. A diffraction image of a zeroth diffraction order and higher order diffraction from a diffraction structure in the substrate is provided. A first layer (4) of the diffractionstructure provides a diffraction image having only a zeroth diffraction order. A second layer (5) has a periodic structure (6a, 6b) configured such that a lowest spatial frequency of the periodic structure is lower than spatial frequencies of interest of the first structure. From the diffraction image originating from diffraction of the radiation beam in both the first and second layer a critical dimension metrology parameter is determined.
摘要翻译： 散射测定方法和装置在光刻设备和器件制造中是有用的。 测量被配置为将辐射束投影到基板的目标部分上的测量投影系统的后焦平面衍射强度图像。 具有第一波长的辐射束被引导到基板。 提供了衍射图像的零衍射级和衍射结构的基底中的高阶衍射。 衍射结构的第一层（4）提供仅具有零级衍射级的衍射图像。 第二层（5）具有周期性结构（6a，6b），其被配置为使得周期性结构的最低空间频率低于第一结构的感兴趣的空间频率。 从第一和第二层中的辐射束的衍射衍射图像，确定临界尺寸计量参数。
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3.发明申请Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权检测方法和装置，光刻设备，光刻处理单元和器件制造方法公开(公告)号：US20080279442A1
公开(公告)日：2008-11-13
申请号：US11798039
申请日：2007-05-09
CPC分类号： G03F1/84 , G03F7/7065
摘要： A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.
摘要翻译： 测量衬底性质的方法包括：生成图案化掩模，其被配置为使通过掩模的辐射束获得图案，模拟使用掩模图案化的图案化辐射束来辐射衬底以获得模拟图案 ，确定易于图案化错误的模拟图案的至少一个位置，以及使用光刻工艺用图案化的辐射束照射衬底。 该方法还包括测量已经被确定为易于图案化错误的衬底上的图案的至少一个位置的至少一个特性的精度，以及根据测量来调整光刻处理。
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4.发明授权Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权检测方法和装置，光刻设备，光刻处理单元和器件制造方法公开(公告)号：US08189195B2
公开(公告)日：2012-05-29
申请号：US11798039
申请日：2007-05-09
CPC分类号： G03F1/84 , G03F7/7065
摘要： A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.
摘要翻译： 测量衬底性质的方法包括：生成图案化掩模，其被配置为使通过掩模的辐射束获得图案，模拟使用掩模图案化的图案化辐射束来辐射衬底以获得模拟图案 ，确定易于图案化错误的模拟图案的至少一个位置，以及使用光刻工艺用图案化的辐射束照射衬底。 该方法还包括测量已经被确定为易于图案化错误的衬底上的图案的至少一个位置的至少一个特性的精度，以及根据测量来调整光刻处理。
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5.发明授权Methods and scatterometers, lithographic systems, and lithographic processing cells 有权方法和散射仪，光刻系统和光刻处理单元公开(公告)号：US09081303B2
公开(公告)日：2015-07-14
申请号：US12846652
申请日：2010-07-29
申请人： Hugo Augustinus Joseph Cramer , Arie Jeffrey Den Boef , Henricus Johannes Lambertus Megens , Hendrik Jan Hidde Smilde , Adrianus Johannes Hendrikus Schellekens , Michael Kubis
发明人： Hugo Augustinus Joseph Cramer , Arie Jeffrey Den Boef , Henricus Johannes Lambertus Megens , Hendrik Jan Hidde Smilde , Adrianus Johannes Hendrikus Schellekens , Michael Kubis
CPC分类号： G03F7/70641 , G01B11/02 , G01B11/22 , G01B11/24 , G01B11/30 , G01N21/47 , G01N21/88 , G03F7/70608 , G03F7/70625 , G03F7/70633 , G03F7/7065
摘要： In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.
摘要翻译： 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。
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6.发明授权Method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus 有权优化模型的方法，测量属性的方法，装置制造方法，光谱仪和光刻设备公开(公告)号：US08868387B2
公开(公告)日：2014-10-21
申请号：US12247371
申请日：2008-10-08
IPC分类号： G06F7/50 , G06F17/10 , G06G7/48 , G01J3/00 , G06F17/50 , G01B11/24 , G03F7/20 , G01N21/47 , G01N21/956 , G01N21/25
CPC分类号： G03F7/70625 , G01B11/24 , G01N21/255 , G01N21/47 , G01N21/95607 , G06F17/10 , G06F17/5009
摘要： A set of parameters used in a model of a spectrometer includes free parameters and fixed parameters. A first set of values for the parameters is set and the model is used to generate a first spectrum. A value of one of the fixed parameters is changed and a second spectrum is generated. An inverse of the model of the spectrometer is then applied to the second spectrum to generate a set of values for the parameters, the values being the same as the first set of values except for one or more of the free parameters. If the free parameter has significantly changed the fixed parameter is designated a free parameter.
摘要翻译： 在光谱仪模型中使用的一组参数包括自由参数和固定参数。 设置参数的第一组值，并使用该模型生成第一个频谱。 固定参数中的一个的值被改变并产生第二个频谱。 然后将光谱仪的模型的反相应用于第二光谱以生成参数的一组值，该值与除了一个或多个空闲参数之外的第一组值相同。 如果自由参数明显改变，则固定参数被指定为空闲参数。
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7.发明申请Calibration Method, Inspection Method and Apparatus, Lithographic Apparatus, and Lithographic Processing Cell 有权校准方法，检验方法和装置，平版印刷设备和平版印刷加工单元公开(公告)号：US20110292365A1
公开(公告)日：2011-12-01
申请号：US13132011
申请日：2009-12-01
CPC分类号： G03F7/70633 , G01N21/4785 , G03F7/70516 , G03F7/70616 , G03F7/70625
摘要： Disclosed are methods, apparatuses, and lithographic systems for calibrating an inspection apparatus. Radiation is projected onto a pattern in a target position of a substrate. By making a plurality of measurements of the pattern and comparing the measured first or higher diffraction orders of radiation reflected from the pattern of different measurements, a residual error indicative of the error in a scatterometer may be calculated. This error is an error in measurements of substrate parameters caused by irregularities of the scatterometer. The residual error may manifest itself as an asymmetry in the diffraction spectra.
摘要翻译： 公开了用于校准检查装置的方法，装置和光刻系统。 辐射被投影到基板的目标位置的图案上。 通过对图案进行多次测量并比较从不同测量图案反射的辐射的测量的第一或更高的衍射级数，可以计算指示散射仪中的误差的残差。 该误差是由散射仪的不规则引起的衬底参数的测量误差。 残余误差可能表现为衍射光谱中的不对称性。
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8.发明授权Calibration method, inspection method and apparatus, lithographic apparatus, and lithographic processing cell 有权校准方法，检查方法和装置，光刻设备和光刻处理单元公开(公告)号：US09188875B2
公开(公告)日：2015-11-17
申请号：US13132011
申请日：2009-12-01
CPC分类号： G03F7/70633 , G01N21/4785 , G03F7/70516 , G03F7/70616 , G03F7/70625
摘要： Disclosed are methods, apparatuses, and lithographic systems for calibrating an inspection apparatus. Radiation is projected onto a pattern in a target position of a substrate. By making a plurality of measurements of the pattern and comparing the measured first or higher diffraction orders of radiation reflected from the pattern of different measurements, a residual error indicative of the error in a scatterometer may be calculated. This error is an error in measurements of substrate parameters caused by irregularities of the scatterometer. The residual error may manifest itself as an asymmetry in the diffraction spectra.
摘要翻译： 公开了用于校准检查装置的方法，装置和光刻系统。 辐射被投影到基板的目标位置的图案上。 通过对图案进行多次测量并比较从不同测量图案反射的辐射的测量的第一或更高的衍射级数，可以计算指示散射仪中的误差的残差。 该误差是由散射仪的不规则引起的衬底参数的测量误差。 残余误差可能表现为衍射光谱中的不对称性。
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公开(公告)号：US08891061B2
公开(公告)日：2014-11-18
申请号：US13062861
申请日：2009-10-02
申请人： Christian Marinus Leewis , Hugo Augustinus Joseph Cramer , Marcus Adrianus Van De Kerkhof , Johannes Anna Quaedackers , Christine Corinne Mattheus
发明人： Christian Marinus Leewis , Hugo Augustinus Joseph Cramer , Marcus Adrianus Van De Kerkhof , Johannes Anna Quaedackers , Christine Corinne Mattheus
IPC分类号： G03F7/20
CPC分类号： G03F7/70641 , G03F1/38 , G03F7/706 , G03F7/70608 , G03F7/70625 , G03F7/70675 , G03F7/70683
摘要： In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.
摘要翻译： 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何性质（例如间距）在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构构成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。
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公开(公告)号：US08830447B2
公开(公告)日：2014-09-09
申请号：US13264256
申请日：2010-05-04
CPC分类号： G03F7/70641
摘要： A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.
摘要翻译： 使用一种方法来确定在光刻工艺中使用的光刻设备在基板上的焦点。 光刻工艺用于在衬底上形成至少两个周期性结构。 每个结构具有至少一个特征，其具有相对的侧壁角度之间的不对称性，所述相对侧壁角度随着光刻设备在基底上的焦点的不同功能而变化。 测量通过将辐射束引导到至少两个周期性结构上产生的光谱，并且确定不对称性的比率。 使用每个结构的焦点和侧壁不对称之间的比率和关系来确定光刻设备在基底上的焦点。
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