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    Pressure sensor apparatus and pressure sensor housing
    1.
    发明授权
    Pressure sensor apparatus and pressure sensor housing 有权
    压力传感器设备和压力传感器外壳

    公开(公告)号：US07571652B2

    公开(公告)日：2009-08-11

    申请号：US11939077

    申请日：2007-11-13

    申请人： Kazunori Saito ,  Kimihiro Ashino ,  Katsumichi Ueyanagi

    发明人： Kazunori Saito ,  Kimihiro Ashino ,  Katsumichi Ueyanagi

    IPC分类号： G01L7/00

    CPC分类号： G01L19/0038 ,  G01L19/0627 ,  G01L19/141

    摘要： A pressure sensor apparatus and a pressure sensor housing are provided that are capable of preventing the occurrence of frozen moisture, swelling of a gel-like coating member and damage of a pressure sensor element without accumulating moisture, oil, gasoline or the like on a protective wall even when the pressure sensor apparatus is disposed obliquely. The protective wall prevents entry of foreign matter into the pressure detection chamber, or a pressure sensor housing of the pressure sensor apparatus. The protective wall has an inclined surface that is provided with an angle θ8a in which a second angle θ2 is acquired between a horizontal line HL and the inclined surface that slopes downward when the pressure sensor apparatus is disposed obliquely by a first angle θ1 with respect to the horizontal line HL.

    摘要翻译： 提供一种压力传感器装置和压力传感器壳体，其能够防止冻结的水分的发生，凝胶状涂层部件的膨胀和压力传感器元件的损坏，而不会将水分，油，汽油等积聚在保护 即使压力传感器装置倾斜地设置。 保护壁防止异物进入压力检测室或压力传感器装置的压力传感器外壳。 保护壁具有倾斜表面，该倾斜表面设置有角度θ8a，其中当压力传感器装置相对于第一角度θ1倾斜设置时，在水平线HL和倾斜表面之间获取第二角度θ2， 水平线HL。

    Semiconductor physical quantity sensing device
    3.
    发明授权
    Semiconductor physical quantity sensing device 有权
    半导体物理量感测装置

    公开(公告)号：US07180798B2

    公开(公告)日：2007-02-20

    申请号：US10406604

    申请日：2003-04-04

    申请人： Mutsuo Nishikawa ,  Katsumichi Ueyanagi

    发明人： Mutsuo Nishikawa ,  Katsumichi Ueyanagi

    IPC分类号： G11C7/00 ,  G01N27/04 ,  H01L41/00 ,  G06G7/28

    CPC分类号： G01D18/008 ,  G01D3/022 ,  G11C2207/2254

    摘要： A semiconductor physical quantity sensing device to perform electrical trimming at low cost by using a CMOS manufacturing process and a small number of terminals. The semiconductor physical quantity sensing device includes a wheatstone bridge circuit, which is a sensor element, an auxiliary memory circuit, which stores provisional trimming data, a main memory circuit, which stores finalized trimming data, an adjusting circuit, which adjusts the output characteristics of the sensor element based on trimming data stored in the auxiliary memory circuit or the main memory circuit, with the elements and circuits being only configured of active elements and passive elements manufactured by way of the CMOS manufacturing process formed on a same semiconductor chip.

    摘要翻译： 一种半导体物理量感测装置，其通过使用CMOS制造工艺和少量端子来以低成本进行修整。 半导体物理量检测装置包括作为传感器元件的惠斯登电桥电路，存储临时修整数据的辅助存储电路，存储最终修整数据的主存储电路，调整电路，其调整输出特性 传感器元件基于存储在辅助存储器电路或主存储器电路中的修整数据，元件和电路仅由有源元件和通过形成在同一半导体芯片上的CMOS制造工艺制造的无源元件构成。

    SEMICONDUCTOR APPARATUS AND PHYSICAL QUANTITY SENSING APPARATUS
    4.
    发明申请
    SEMICONDUCTOR APPARATUS AND PHYSICAL QUANTITY SENSING APPARATUS 审中-公开
    半导体装置和物理量传感装置

    公开(公告)号：US20060244101A1

    公开(公告)日：2006-11-02

    申请号：US11278429

    申请日：2006-04-03

    申请人： Katsuyuki Uematsu ,  Katsumichi Ueyanagi

    发明人： Katsuyuki Uematsu ,  Katsumichi Ueyanagi

    IPC分类号： H01L29/00

    CPC分类号： G01D3/032 ,  G01L9/06 ,  G01L19/0084 ,  G01L19/069 ,  G01L19/141

    摘要： In a semiconductor device, in particular a physical quantity sensing apparatus, the length and the width of the wiring connecting a sensor internal circuit and an output or power supply pad are adjusted so that the total parasitic resistance components R1 parasitic on the wiring and the sum Rf of the resistance values of resistors in the filter circuit for countermeasuring against electromagnetic noises satisfy the relational expression R1/Rf×100

    摘要翻译： 在半导体装置中，特别是物理量感测装置中，调整连接传感器内部电路和输出或电源焊盘的布线的长度和宽度，使得寄生在布线上的总寄生电阻分量R1和总和 用于对抗电磁噪声的滤波电路中的电阻的电阻值的Rf​​满足关系式R 1 / Rf×100 <25。 此外，调整输出或电源焊盘与电容器之间的布线的长度和宽度以及电容器和接地焊盘之间的布线的长度和宽度，使得阻抗Za导致 通过寄生电阻分量Ra和输出或电源焊盘与电容器之间的布线的电感分量La，由寄生电阻分量Rk引起的阻抗Zk和电容器之间的布线的电感分量Lk s）和接地焊盘，并且由电容器的电容分量引起的阻抗Zc总是满足要切断的电磁噪声的频率范围内的关系式Za + Zk

    Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor
    5.
    发明授权
    Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor 失效
    半导体传感器芯片及其制造方法，以及用于组装传感器的半导体传感器和封装

    公开(公告)号：US06632697B2

    公开(公告)日：2003-10-14

    申请号：US09956969

    申请日：2001-09-21

    申请人： Katsumichi Ueyanagi ,  Mutsuo Nishikawa ,  Mitsuo Sasaki

    发明人： Katsumichi Ueyanagi ,  Mutsuo Nishikawa ,  Mitsuo Sasaki

    IPC分类号： H01L2100

    CPC分类号： G01P1/023 ,  G01P15/0802 ,  G01P15/0888 ,  G01P15/11 ,  G01P15/123 ,  G01P21/00 ,  H01F10/126 ,  H01F10/265 ,  H05K1/18

    摘要： The present invention is a method of making an acceleration sensor chip. The sensor chip is prepared from a SOI wafer having a silicon substrate, a SiO2 layer and a silicon thin film. A dopant is ion implanted at a position corresponding to a semiconductor strain gauge on the silicon thin film to form a diffusion resistor, and for forming devices necessary for circuit construction on said silicon thin film. A protective film is provided on the entire surface of the wafer, and a plurality of through holes penetrating the silicon thin film are formed by patterning and etching to make a weight part and a beam part connected to a support frame part on the periphery. The SiO2 layer under the weight part and the beam part is removed by wet etching to form the through holes, while leaving the protective film in place. The protective film is removed and a resist coated over the entire surface of the wafer. A slit for dividing the chip is formed part way through the wafer by dicing. The resist is removed by ashing with an O2 plasma and the chip is divided by concentrating a stress on the slit.

    摘要翻译： 本发明是制造加速度传感器芯片的方法。 传感器芯片由具有硅衬底，SiO PDAT>层和硅薄膜的SOI晶片制备。 在与硅薄膜上的半导体应变计相对应的位置处离子注入掺杂剂，以形成扩散电阻，并形成所述硅薄膜上电路构造所需的器件。 在晶片的整个表面上设置保护膜，通过图案化和蚀刻形成穿透硅薄膜的多个通孔，以使重量部分和与外围的支撑框架部分连接的梁部分。 通过湿蚀刻除去重量部分下面的SiO 2 和梁部分，以形成通孔，同时使保护膜保持在适当位置。 去除保护膜并将抗蚀剂涂覆在晶片的整个表面上。 用于分割芯片的狭缝通过切割部分地穿过晶片。 用O 2 等离子体通过灰化除去抗蚀剂，并通过在狭缝上集中应力来分割芯片。

    Semiconductor capacitive acceleration sensor
    6.
    发明授权
    Semiconductor capacitive acceleration sensor 失效
    半导体电容式加速度传感器

    公开(公告)号：US5665915A

    公开(公告)日：1997-09-09

    申请号：US281100

    申请日：1994-07-27

    申请人： Mitsuo Kobayashi ,  Katsumichi Ueyanagi

    发明人： Mitsuo Kobayashi ,  Katsumichi Ueyanagi

    IPC分类号： G01P1/00 ,  G01P15/125

    CPC分类号： G01P1/006 ,  G01P15/125

    摘要： A semiconductor capacitive acceleration sensor is configured so that it can be constructed in a small size, it has a high detection sensitivity, and the detection output characteristic is linear. The sensor comprises a semiconductor substrate 1; supporters 21A to 21D each of which is made of a conductive semiconductor, and which are disposed on the upper face of the semiconductor substrate 1 through an insulating layer 1A so as to be placed at positions corresponding to corners of a quadrilateral; beams 26A to 26D which respectively have ends connected with the supporters, which coincide with each other when the beams are rotated, and which elongate in the side directions of the quadrilateral; a movable electrode 23 which has a quadrilateral shape, and which is disposed so as to be separated from the beams by a predetermined distance; connectors 27A to 27D which respectively connect the movable electrode 23 with the beams; and a stationary electrode 31 which is disposed so as to be separated from the lower face of the movable electrode 23 by a predetermined distance.

    摘要翻译： 半导体电容加速度传感器被构造成能够构造成小尺寸，具有高检测灵敏度，检测输出特性为线性。 传感器包括半导体衬底1; 支撑体21A至21D，其各自由导电半导体制成，并且通过绝缘层1A设置在半导体衬底1的上表面上，以便放置在与四边形的角部对应的位置; 梁26A至26D分别具有与支撑件连接的端部，当梁旋转时彼此重合，并且在四边形的侧面方向上延伸; 具有四边形形状的可动电极23，其设置成与光束分离预定距离; 连接器27A至27D，其分别将可动电极23与梁连接; 以及固定电极31，其设置成与可动电极23的下表面分开预定距离。

    Integrated sensor including a pressure sensor and a temperature sensor
    9.
    发明授权
    Integrated sensor including a pressure sensor and a temperature sensor 有权
    集成传感器，包括压力传感器和温度传感器

    公开(公告)号：US07574919B2

    公开(公告)日：2009-08-18

    申请号：US11937950

    申请日：2007-11-09

    申请人： Kazunori Saito ,  Kimihiro Ashino ,  Katsumichi Ueyanagi

    发明人： Kazunori Saito ,  Kimihiro Ashino ,  Katsumichi Ueyanagi

    IPC分类号： G01L19/04

    CPC分类号： G01K13/02 ,  G01K1/14 ,  G01K1/18 ,  G01K2205/02 ,  G01L19/0092 ,  G01L23/24

    摘要： An integrated sensor includes a pressure sensor integrated with a temperature sensor. When the sensor is attached to an object of attachment at a mounting position at an angle of θrq degrees with respect to an ideal attachment position, in which a central axis of at sensor body element of the temperature sensor element is disposed perpendicular to a direction in which a gas to be measured passes through the object of attachment, an inclination angle θpos at which the central axis of the sensor body element is inclined at the mounting position with respect to a position of the central axis of the main body element at the ideal attachment position is set according to the following equation: (θrq−θallow)≦θpos≦(θrq+θallow) wherein θallow represents an allowable angle at which an allowable response speed of the temperature sensor element is obtained.

    摘要翻译： 集成传感器包括与温度传感器集成的压力传感器。 当传感器在相对于理想的安装位置以相同角度的安装位置附接到安装位置时，其中温度传感器元件的传感器主体元件的中心轴垂直于 被测量的气体通过安装对象，传感器体元件的中心轴线相对于主体元件的中心轴位置处于理想状态的安装位置倾斜的倾斜角度 附件位置根据以下等式设置：<？in-line-formula description =“In-line Formulas”end =“lead”？>（thetarq-thetaallow）<= thetapos <=（thetarq + thetaallow）<？in -line-formula description =“In-line Formulas”end =“tail”？>其中thetaallow表示获得温度传感器元件的允许响应速度的允许角度。

    INTEGRATED SENSOR INCLUDING A PRESSURE SENSOR AND A TEMPERATURE SENSOR
    10.
    发明申请
    INTEGRATED SENSOR INCLUDING A PRESSURE SENSOR AND A TEMPERATURE SENSOR 有权
    集成传感器，包括压力传感器和温度传感器

    公开(公告)号：US20080110268A1

    公开(公告)日：2008-05-15

    申请号：US11937950

    申请日：2007-11-09

    申请人： Kazunori SAITO ,  Kimihiro ASHINO ,  Katsumichi UEYANAGI

    发明人： Kazunori SAITO ,  Kimihiro ASHINO ,  Katsumichi UEYANAGI

    IPC分类号： G01L19/04 ,  G01L7/00

    CPC分类号： G01K13/02 ,  G01K1/14 ,  G01K1/18 ,  G01K2205/02 ,  G01L19/0092 ,  G01L23/24

    摘要： An integrated sensor includes a pressure sensor integrated with a temperature sensor. When the sensor is attached to an object of attachment at a mounting position at an angle of θrq degrees with respect to an ideal attachment position, in which a central axis of at sensor body element of the temperature sensor element is disposed perpendicular to a direction in which a gas to be measured passes through the object of attachment, an inclination angle θpos at which the central axis of the sensor body element is inclined at the mounting position with respect to a position of the central axis of the main body element at the ideal attachment position is set according to the following equation: (θrq−θallow)≦θpos≦(θrq+θallow) wherein θallow represents an allowable angle at which an allowable response speed of the temperature sensor element is obtained.

    摘要翻译： 集成传感器包括与温度传感器集成的压力传感器。 当传感器相对于理想的安装位置以相对于理想的安装位置的角度附接到安装位置处的安装位置时，其中温度传感器的传感器主体元件的中心轴线 元件垂直于待测量气体通过附着物体的方向设置，传感器主体元件的中心轴线在安装位置处倾斜的倾斜角度θ3， 相对于在理想的附接位置处的主体元件的中心轴的位置根据以下等式设置：<？in-line-formula description =“In-line formula”end =“lead”？> 允许允许允许允许 SUB>）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中θ<允许表示允许的温度传感器电极ele 获得。