公开(公告)号：US08716836B2

公开(公告)日：2014-05-06

申请号：US12811011

申请日：2008-12-26

申请人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

发明人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

IPC分类号： H01L21/331 ,  H01L29/737

CPC分类号： H01L21/8258 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/8252 ,  H01L29/66318

摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.

摘要翻译： 实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。 提供了包括Si晶片的半导体晶片; 所述抑制层形成在所述晶片上并且抑制晶体生长，所述抑制层包括覆盖所述晶片的一部分的覆盖区域和不覆盖所述覆盖区域内的所述晶片的一部分的开放区域; 在开放区域晶体生长的Ge层; 以及在Ge层上晶体生长的功能层。 Ge层可以通过使得能够移动晶体缺陷的温度和持续时间退火而形成，并且退火重复多次。

公开(公告)号：US07723754B2

公开(公告)日：2010-05-25

申请号：US11191769

申请日：2005-07-28

申请人： Kazumi Wada ,  Lionel C. Kimerling

发明人： Kazumi Wada ,  Lionel C. Kimerling

IPC分类号： H01L29/737

CPC分类号： H01L31/028 ,  H01L31/0312 ,  H01L31/1055 ,  H01L31/109 ,  H01L31/1105 ,  Y02E10/547

摘要： A phototransistor includes an emitter and a base that comprises Ge. A collector comprises Si. The base, emitter, and collector form at least one Si/Ge heterojunction allowing the unpinning of Fermi energy level (EF) of the phototransistor.

摘要翻译： 光电晶体管包括发射极和包含Ge的基极。 收集器包括Si。 基极，发射极和集电极形成至少一个Si / Ge异质结，允许去除光电晶体管的费米能级（EF）。

公开(公告)号：US07310454B2

公开(公告)日：2007-12-18

申请号：US10852386

申请日：2004-05-24

申请人： Shoji Akiyama ,  Lionel C. Kimerling ,  Kazumi Wada

发明人： Shoji Akiyama ,  Lionel C. Kimerling ,  Kazumi Wada

IPC分类号： G02F1/295 ,  G02B6/26 ,  G02B6/42

CPC分类号： G02F1/21 ,  G02F1/3136 ,  G02F2001/213 ,  G02F2202/32

摘要： An optical device includes at least two photonic bandgap crystal (PBG) stacks that are each comprised of alternating layers of high and low index materials. A defect region is formed in a cavity region between the at least two photonic bandgap crystal stacks so as to provide the properties needed to reflect light received by the optical device.

摘要翻译： 光学器件包括至少两个光子带隙晶体（PBG）堆叠，每个由高和低折射率材料的交替层组成。 在所述至少两个光子带隙晶体堆叠之间的空腔区域中形成缺陷区域，以便提供反射由光学器件接收的光所需的特性。

公开(公告)号：US20070286952A1

公开(公告)日：2007-12-13

申请号：US10566686

申请日：2004-07-29

申请人： Jifeng Liu ,  Douglas Cannon ,  Kazumi Wada ,  Samerkhae Jongthammanurak ,  David Danielson ,  Jurgen Michel ,  Lionel Kimerling

发明人： Jifeng Liu ,  Douglas Cannon ,  Kazumi Wada ,  Samerkhae Jongthammanurak ,  David Danielson ,  Jurgen Michel ,  Lionel Kimerling

IPC分类号： H01L21/20 ,  C30B25/18

CPC分类号： H01L31/1808 ,  C30B25/18 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02656 ,  H01L31/028 ,  Y02E10/547

摘要： A SiGe or Ge structure comprises a substrate and a SiGe or Ge layer that is formed on a first surface of the substrate. A silicidation or germanide layer is formed on a second surface of the substrate so to increase the tensile strain of the SiGe or Ge layer on the first surface.

摘要翻译： SiGe或Ge结构包括衬底和形成在衬底的第一表面上的SiGe或Ge层。 在基板的第二表面上形成硅化物或锗化物层，以增加第一表面上的SiGe或Ge层的拉伸应变。

公开(公告)号：US07123805B2

公开(公告)日：2006-10-17

申请号：US10869636

申请日：2004-06-16

申请人： Daniel K. Sparacin ,  Kazumi Wada ,  Lionel C. Kimerling

发明人： Daniel K. Sparacin ,  Kazumi Wada ,  Lionel C. Kimerling

IPC分类号： G02B6/10 ,  H01L21/00

CPC分类号： G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/12097

摘要： The light-guiding structure includes a waveguide structure that comprises a substrate and a low refractive index underclad material. The waveguide structure is oxidized to form an oxidized layer on a surface of the waveguide structure. The oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that the waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.

摘要翻译： 导光结构包括波导结构，其包括基底和低折射率底层材料。 波导结构被氧化以在波导结构的表面上形成氧化层。 在反应限制氧化态接近扩散限制状态后，氧化层进行各向同性蚀刻，并被反复氧化和蚀刻，使得波导结构在反应限制状态下连续氧化，减少氧化的总时间和氧化的体积 材料，使得波导结构的侧壁粗糙度有效地降低，导致导光的高透射率。

公开(公告)号：US20060022226A1

公开(公告)日：2006-02-02

申请号：US11191769

申请日：2005-07-28

申请人： Kazumi Wada ,  Lionel Kimerling

发明人： Kazumi Wada ,  Lionel Kimerling

IPC分类号： H01L27/148

CPC分类号： H01L31/028 ,  H01L31/0312 ,  H01L31/1055 ,  H01L31/109 ,  H01L31/1105 ,  Y02E10/547

摘要： A phototransistor includes an emitter and a base that comprises Ge. A collector comprises Si. The base, emitter, and collector form at least one Si/Ge heterojunction allowing the unpinning of Fermi energy level (EF) of the phototransistor.

摘要翻译： 光电晶体管包括发射极和包含Ge的基极。 收集器包括Si。 基极，发射极和集电极形成至少一个Si / Ge异质结，允许去除光电晶体管的费米能级（E> F）。

公开(公告)号：US06946318B2

公开(公告)日：2005-09-20

申请号：US10952055

申请日：2004-09-28

申请人： Kazumi Wada ,  Lionel C. Kimerling ,  Yasuhiko Ishikawa ,  Douglas D. Cannon ,  Jifeng Liu

发明人： Kazumi Wada ,  Lionel C. Kimerling ,  Yasuhiko Ishikawa ,  Douglas D. Cannon ,  Jifeng Liu

IPC分类号： H01L31/10 ,  H01L21/00 ,  H01L27/04 ,  H01L27/14 ,  H01L27/146 ,  H01L27/15 ,  H01L29/06 ,  H01L31/028 ,  H01L31/18

CPC分类号： H01L27/146 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/933

摘要： A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-band.

摘要翻译： 光电检测器装置包括多个Ge外延层，其在衬底上生长并在限定的温度范围内退火。 Ge外延层形成拉伸应变Ge层，其允许光电检测器件在C波段和L波段中有效地工作。

公开(公告)号：US20050063061A1

公开(公告)日：2005-03-24

申请号：US10917209

申请日：2004-08-12

申请人： Felix Grawert ,  Shoji Akiyama ,  Kazumi Wada ,  Franz Kaertner

发明人： Felix Grawert ,  Shoji Akiyama ,  Kazumi Wada ,  Franz Kaertner

IPC分类号： G02B5/08 ,  H01S3/098 ,  F21V9/04 ,  G02B5/20

CPC分类号： G02B5/0833

摘要： An optical reflector includes an optical reflective element that comprises alternating layers of high and low index layers. A new substrate is bonded on the optical reflective element. The sequence of layers in the reflective element is reversed in order such that the layers grown first with lowest surface roughness are exposed to the highest electric field strength, and the layer grown last, of highest roughness, are buried deep in the multilayer stack.

摘要翻译： 光学反射器包括光反射元件，其包括高折射率层和低折射率层的交替层。 新的衬底粘结在光学反射元件上。 反射元件中的层序顺序颠倒，使得首先以最低表面粗糙度生长的层暴露于最高的电场强度，并且最后粗糙度最高的层被深埋在多层叠层中。

公开(公告)号：US20050013575A1

公开(公告)日：2005-01-20

申请号：US10869636

申请日：2004-06-16

申请人： Daniel Sparacin ,  Kazumi Wada ,  Lionel Kimerling

发明人： Daniel Sparacin ,  Kazumi Wada ,  Lionel Kimerling

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02B6/10

CPC分类号： G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/12097

摘要： The light-guiding structure includes a waveguide structure that comprises a substrate and a low refractive index underclad material. The waveguide structure is oxidized to form an oxidized layer on a surface of the waveguide structure. The oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that the waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.

摘要翻译： 导光结构包括波导结构，其包括基底和低折射率底层材料。 波导结构被氧化以在波导结构的表面上形成氧化层。 在反应限制氧化态接近扩散限制状态后，氧化层进行各向同性蚀刻，并被反复氧化和蚀刻，使得波导结构在反应限制状态下连续氧化，减少氧化的总时间和氧化的体积 材料，使得波导结构的侧壁粗糙度有效降低，导致导光的高透射率。

公开(公告)号：US20170299434A1

公开(公告)日：2017-10-19

申请号：US15602323

申请日：2017-05-23

申请人： Juejun Hu ,  Tian GU ,  Kazumi WADA ,  Anuradha Murthy AGARWAL ,  Lionel Cooper KIMERLING ,  Derek Matthew KITA ,  Junying LI ,  Fleur Jacolien FOK

发明人： Juejun Hu ,  Tian GU ,  Kazumi WADA ,  Anuradha Murthy AGARWAL ,  Lionel Cooper KIMERLING ,  Derek Matthew KITA ,  Junying LI ,  Fleur Jacolien FOK

IPC分类号： G01J3/12 ,  G01J3/02 ,  G01J3/28

CPC分类号： G01J3/12 ,  G01J3/0208 ,  G01J3/0218 ,  G01J3/0237 ,  G01J3/2823 ,  G01J3/32 ,  G01J2003/1226

摘要： An apparatus for generating a spectral image includes a filter to receive incident light. The filter has a variable refractive index. The apparatus also includes a modulator, operably coupled to the filter, to modulate the variable refractive index of the filter so as to generate a plurality of optical patterns from the incident light. The plurality of optical patterns represents the spectral image and each optical pattern in the plurality of optical patterns corresponds to a different modulation of the variable refractive index. The apparatus further includes a detector, in optical communication with the filter, to detect the plurality of optical patterns.