利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

51 条记录 (耗时 0.018 秒)

    Multiple oxidation smoothing method for reducing silicon waveguide roughness
    1.
    发明申请
    Multiple oxidation smoothing method for reducing silicon waveguide roughness 有权
    减少硅波导粗糙度的多重氧化平滑法

    公开(公告)号：US20050013575A1

    公开(公告)日：2005-01-20

    申请号：US10869636

    申请日：2004-06-16

    申请人： Daniel Sparacin ,  Kazumi Wada ,  Lionel Kimerling

    发明人： Daniel Sparacin ,  Kazumi Wada ,  Lionel Kimerling

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02B6/10

    CPC分类号： G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/12097

    摘要： The light-guiding structure includes a waveguide structure that comprises a substrate and a low refractive index underclad material. The waveguide structure is oxidized to form an oxidized layer on a surface of the waveguide structure. The oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that the waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.

    摘要翻译： 导光结构包括波导结构，其包括基底和低折射率底层材料。 波导结构被氧化以在波导结构的表面上形成氧化层。 在反应限制氧化态接近扩散限制状态后，氧化层进行各向同性蚀刻，并被反复氧化和蚀刻，使得波导结构在反应限制状态下连续氧化，减少氧化的总时间和氧化的体积 材料，使得波导结构的侧壁粗糙度有效降低，导致导光的高透射率。

    Ge photodetectors
    3.
    发明申请
    Ge photodetectors 有权
    Ge光电探测器

    公开(公告)号：US20060022226A1

    公开(公告)日：2006-02-02

    申请号：US11191769

    申请日：2005-07-28

    申请人： Kazumi Wada ,  Lionel Kimerling

    发明人： Kazumi Wada ,  Lionel Kimerling

    IPC分类号： H01L27/148

    CPC分类号： H01L31/028 ,  H01L31/0312 ,  H01L31/1055 ,  H01L31/109 ,  H01L31/1105 ,  Y02E10/547

    摘要： A phototransistor includes an emitter and a base that comprises Ge. A collector comprises Si. The base, emitter, and collector form at least one Si/Ge heterojunction allowing the unpinning of Fermi energy level (EF) of the phototransistor.

    摘要翻译： 光电晶体管包括发射极和包含Ge的基极。 收集器包括Si。 基极，发射极和集电极形成至少一个Si / Ge异质结，允许去除光电晶体管的费米能级（E> F）。

    High efficiency tandem solar cells on silicon substrates using ultra thin germanium buffer layers
    4.
    发明申请
    High efficiency tandem solar cells on silicon substrates using ultra thin germanium buffer layers 审中-公开
    使用超薄锗缓冲层的硅衬底上的高效串联太阳能电池

    公开(公告)号：US20050081910A1

    公开(公告)日：2005-04-21

    申请号：US10922420

    申请日：2004-08-20

    申请人： David Danielson ,  Jeremy Graham ,  Kazumi Wada ,  Trisha Montalbo ,  Lionel Kimerling

    发明人： David Danielson ,  Jeremy Graham ,  Kazumi Wada ,  Trisha Montalbo ,  Lionel Kimerling

    IPC分类号： H01L31/00 ,  H01L31/068

    CPC分类号： H01L31/0687 ,  Y02E10/544

    摘要： A system is disclosed for providing electrical power responsive to solar energy. The system includes a Si cell, an AlGaAs cell, and a Ge cell. The Si cell is for providing electrical power responsive to solar energy within a first frequency range. The AlGaAs cell is coupled to a first side of the Si cell, and is for providing electrical power responsive to solar energy within a second frequency range. The Ge cell is coupled to a second side of the Si cell, and the Ge cell provides electrical power responsive to solar energy within a third frequency range.

    摘要翻译： 公开了一种用于提供响应于太阳能的电力的系统。 该系统包括Si电池，AlGaAs电池和Ge电池。 Si电池用于响应于第一频率范围内的太阳能提供电力。 AlGaAs单元耦合到Si单元的第一侧，并且用于在第二频率范围内响应于太阳能提供电功率。 Ge单元耦合到Si单元的第二侧，并且Ge单元提供响应于第三频率范围内的太阳能的电功率。

    Optical grating coupler
    5.
    发明申请
    Optical grating coupler 有权
    光栅耦合器

    公开(公告)号：US20060233505A1

    公开(公告)日：2006-10-19

    申请号：US11444541

    申请日：2006-05-31

    申请人： Jun-Fei Zheng ,  Kazumi Wada ,  Jurgen Michel ,  Donghwan Ahn ,  Lionel Kimerling

    发明人： Jun-Fei Zheng ,  Kazumi Wada ,  Jurgen Michel ,  Donghwan Ahn ,  Lionel Kimerling

    IPC分类号： G02B6/10

    CPC分类号： G02B6/124 ,  G02B6/42

    摘要： An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.

    摘要翻译： 光波导设置在波导上，以将来自波导内部的光通过波导的与光栅相反的一侧引导。 在一个实施例中，波导，光栅和光学传感器被组合成单个整体结构。 在另一个实施例中，吸收层在光栅的区域中直接连接到波导。 在另一个实施例中，通过在光栅的折射率和设置在光栅上的包层的折射率之间具有高折射率对比度，以及通过在光栅中具有适当尺寸的不连续性来提高光栅的效率。

    SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD
    8.
    发明申请
    SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD 审中-公开
    半导体波导和半导体波形制造方法

    公开(公告)号：US20110006399A1

    公开(公告)日：2011-01-13

    申请号：US12810989

    申请日：2008-12-26

    申请人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    发明人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    IPC分类号： H01L29/12 ,  H01L21/20

    CPC分类号： H01L21/02516 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/267 ,  H01L29/7371

    摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising a single-crystal Si wafer; an insulating layer that has an open region and that is formed on the wafer; a Ge layer that is epitaxially grown on the wafer in the open region; and a GaAs layer that is epitaxially grown on the Ge layer, wherein the Ge layer is formed by (i) placing the wafer in a CVD reaction chamber that can create an ultra-high vacuum low-pressure state, (ii) performing a first epitaxial growth at a first temperature at which raw material gas can thermally decompose, (iii) performing a second epitaxial growth at a second temperature that is higher than the first temperature, (iv) performing a first annealing, at a third temperature that is loss than a melting point of Ge, on epitaxial layers formed by the first and second epitaxial growths, and (v) performing a second annealing at a fourth temperature that is lower than the third temperature. The Ge layer may he formed by repeating the first annealing and the second annealing a plurality of times, and the insulating layer may be a silicon oxide layer.

    摘要翻译： 实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。 提供了包括单晶Si晶片的半导体晶片; 绝缘层，其具有开放区域并形成在所述晶片上; 在开放区域中在晶片上外延生长的Ge层; 以及在所述Ge层上外延生长的GaAs层，其中，所述Ge层通过以下方式形成：（i）将所述晶片放置在可产生超高真空低压状态的CVD反应室中，（ii） 在原料气体可以热分解的第一温度下外延生长，（iii）在高于第一温度的第二温度下进行第二外延生长，（iv）在损失的第三温度下进行第一退火 比在第一和第二外延生长形成的外延层上的熔点高的Ge，和（v）在低于第三温度的第四温度下进行第二次退火。 可以通过重复第一退火和第二退火多次形成Ge层，并且绝缘层可以是氧化硅层。