公开(公告)号：US20140073112A1

公开(公告)日：2014-03-13

申请号：US14110220

申请日：2011-04-08

申请人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

发明人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

IPC分类号： H01L21/20

CPC分类号： H01L21/20 ,  H01L21/2007 ,  H01L21/3105 ,  H01L21/76251

摘要： A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate. The method comprises: forming at least one reservoir in at least one reservoir formation layer on the first substrate and/or the second substrate, the reservoir comprised of an amorphous material, at least partial filling of the reservoir/reservoirs with a first educt or a first group of educts, forming or applying a reaction layer which contains a second educt or a second group of educts to the reservoir and/or the reservoir, the first contact surface making contact with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt or the first group with the second educt or the second group.

摘要翻译： 一种用于将第一基板的第一接触表面接合到第二基板的第二接触表面的方法。 该方法包括：在第一基板和/或第二基板上的至少一个储层形成层中形成至少一个储存器，储存器由非晶态材料构成，至少部分地填充储存器/储存器与第一流出物或 第一组离子，将包含第二喷射或第二组离子的反应层形成或施加到储存器和/或储存器，第一接触表面与第二接触表面接触以形成预先连接的连接，以及 在所述第一和第二接触表面之间形成永久性接合，至少部分地通过所述第一溶出物或所述第一组与所述第二溶剂或所述第二组的反应来加强。

公开(公告)号：US20130299080A1

公开(公告)日：2013-11-14

申请号：US13981353

申请日：2011-01-25

申请人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

发明人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

IPC分类号： H01L21/70

CPC分类号： H01L24/83 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/70 ,  H01L21/76251 ,  H01L24/80 ,  H01L2224/80907 ,  H01L2224/83009 ,  H01L2224/83894 ,  H01L2224/83907 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/01008 ,  H01L2924/01018 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106

摘要： A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

摘要翻译： 根据以下步骤将第一基板的第一接触表面接合到第二接触表面的方法：在所述第一接触表面上的表层中形成储存器，至少部分地用第一接触表面填充所述储存器 第一组离散体，使第一接触表面与第二接触表面接触以形成预结合连接，以及在第一和第二接触表面之间形成永久接合，至少部分地通过第一离子流体与 包含在第二基板的反应层中的第二喷射。

公开(公告)号：US10163681B2

公开(公告)日：2018-12-25

申请号：US14232911

申请日：2011-08-30

申请人： Klaus Martinschitz ,  Markus Wimplinger ,  Bernhard Rebhan ,  Kurt Hingerl

发明人： Klaus Martinschitz ,  Markus Wimplinger ,  Bernhard Rebhan ,  Kurt Hingerl

IPC分类号： H01L21/762 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/18 ,  B23K35/00 ,  B23K35/26 ,  B23K35/30 ,  B23K35/02 ,  B23K20/02 ,  B23K101/40

摘要： A method for bonding of a first solid substrate to a second solid substrate which contains a first material with the following steps, especially the following sequence: formation or application of a function layer which contains a second material to the second solid substrate, making contact of the first solid substrate with the second solid substrate on the function layer, pressing together the solid substrates for forming a permanent bond between the first and second solid substrate, at least partially reinforced by solid diffusion and/or phase transformation of the first material with the second material, an increase of volume on the function layer being caused.

公开(公告)号：US08975158B2

公开(公告)日：2015-03-10

申请号：US14110220

申请日：2011-04-08

申请人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

发明人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

IPC分类号： H01L21/46 ,  H01L21/20 ,  H01L21/3105 ,  H01L21/762

CPC分类号： H01L21/20 ,  H01L21/2007 ,  H01L21/3105 ,  H01L21/76251

摘要： A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate. The method comprises: forming at least one reservoir in at least one reservoir formation layer on the first substrate and/or the second substrate, the reservoir comprised of an amorphous material, at least partial filling of the reservoir/reservoirs with a first educt or a first group of educts, forming or applying a reaction layer which contains a second educt or a second group of educts to the reservoir and/or the reservoir, the first contact surface making contact with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt or the first group with the second educt or the second group.

摘要翻译： 一种用于将第一基板的第一接触表面接合到第二基板的第二接触表面的方法。 该方法包括：在第一基板和/或第二基板上的至少一个储层形成层中形成至少一个储存器，储存器由非晶态材料构成，至少部分地填充储存器/储存器与第一流出物或 第一组离子，将包含第二喷射或第二组离子的反应层形成或施加到储存器和/或储存器，第一接触表面与第二接触表面接触以形成预先连接的连接，以及 在所述第一和第二接触表面之间形成永久性结合，至少部分地通过所述第一溶出物或所述第一组与所述第二组或第二组的反应来加强。

公开(公告)号：US10825793B2

公开(公告)日：2020-11-03

申请号：US14007999

申请日：2011-04-08

申请人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

发明人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

IPC分类号： H01L21/20 ,  H01L23/00 ,  H01L21/762 ,  H01L21/3105 ,  H01L21/18 ,  H01L21/02

摘要： This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate with the following steps, especially the following sequence: forming a reservoir in a surface layer on the first contact surface, the first surface layer consisting at least largely of a native oxide material, at least partial filling of the reservoir with a first educt or a first group of educts, the first contact surface making contact with the second contact surface for formation of a prebond connection, forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

公开(公告)号：US09252042B2

公开(公告)日：2016-02-02

申请号：US13981353

申请日：2011-01-25

申请人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

发明人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

IPC分类号： H01L21/70 ,  H01L21/18 ,  H01L21/20 ,  H01L21/762

CPC分类号： H01L24/83 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/70 ,  H01L21/76251 ,  H01L24/80 ,  H01L2224/80907 ,  H01L2224/83009 ,  H01L2224/83894 ,  H01L2224/83907 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/01008 ,  H01L2924/01018 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106

摘要： A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

摘要翻译： 根据以下步骤将第一基板的第一接触表面接合到第二接触表面的方法：在所述第一接触表面上的表层中形成储存器，至少部分地用第一接触表面填充所述储存器 第一组离散体，使第一接触表面与第二接触表面接触以形成预结合连接，以及在第一和第二接触表面之间形成永久接合，至少部分地通过第一离子流体与 包含在第二基板的反应层中的第二喷射。

公开(公告)号：US20150165752A1

公开(公告)日：2015-06-18

申请号：US14414795

申请日：2012-07-24

申请人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

发明人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

IPC分类号： B32B38/10 ,  B32B37/00 ,  H01J37/32

CPC分类号： B32B38/10 ,  B32B37/0046 ,  H01J37/32036 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32339 ,  H01J37/32532 ,  H01J37/32798 ,  H01J2237/334 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/67092

摘要： A method for bonding of a first contact area of a first substrate to a second contact area of a second substrate, the second substrate having a least one reaction layer, and a device for carrying out said method. The method comprises: (a) accommodating the substrates between a first electrode and a second electrode, or within a coil, (b) formation of a reservoir on the first contact area by exposing the first contact area to a plasma (c) at least partially filling of the reservoir with a first educt or a first group of educts, (d) contacting the first contact area with the second contact area for formation of a pre-bond interconnection, (e) forming a permanent bond between the first and second contact areas at least partially strengthened by the reaction of the first educt with a second educt which is contained in the reaction layer of the second substrate.

摘要翻译： 一种用于将第一基板的第一接触区域与第二基板的第二接触区域接合的方法，所述第二基板具有至少一个反应层，以及用于执行所述方法的设备。 该方法包括：（a）在第一电极和第二电极之间或线圈内容纳衬底，（b）通过将第一接触区域暴露于等离子体（c）至少形成第一接触区域上的储存器 （d）使第一接触区域与第二接触区域接触以形成预接合互连，（e）在第一和第二组之间形成永久性接合 接触区域通过第一离子束与第二离子束的反应至少部分地被增强，第二离子束包含在第二基底的反应层中。

公开(公告)号：US20140017877A1

公开(公告)日：2014-01-16

申请号：US14007999

申请日：2011-04-08

申请人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

发明人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

IPC分类号： H01L21/18

CPC分类号： H01L24/83 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/3105 ,  H01L21/76251 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/27444 ,  H01L2224/278 ,  H01L2224/29188 ,  H01L2224/32145 ,  H01L2224/8309 ,  H01L2224/83896 ,  H01L2924/01013 ,  H01L2924/10252 ,  H01L2924/1032 ,  H01L2924/10328 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/10332 ,  H01L2924/10333 ,  H01L2924/10334 ,  H01L2924/10335 ,  H01L2924/10336 ,  H01L2924/10346 ,  H01L2924/1082 ,  H01L2924/10821 ,  H01L2924/10823 ,  H01L2924/20106

摘要： This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate with the following steps, especially the following sequence: forming a reservoir in a surface layer on the first contact surface, the first surface layer consisting at least largely of a native oxide material, at least partial filling of the reservoir with a first educt or a first group of educts, the first contact surface making contact with the second contact surface for formation of a prebond connection, forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

摘要翻译： 本发明涉及以下步骤将第一衬底的第一接触表面与第二衬底的第二接触表面接合的方法，特别是以下顺序：在第一接触表面上的表面层中形成储存器， 至少主要由天然氧化物材料组成的第一表面层，至少部分填充具有第一喷射或第一组离子的储存器，所述第一接触表面与第二接触表面接触以形成预结合连接，形成 所述第一和第二接触表面之间的永久性接合，至少部分地通过所述第一离子与所述第二基底的反应层中包含的第二离子的反应而被强化。

公开(公告)号：US09159717B2

公开(公告)日：2015-10-13

申请号：US14110245

申请日：2011-04-08

申请人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

发明人： Thomas Plach ,  Kurt Hingerl ,  Markus Wimplinger ,  Christoph Flötgen

IPC分类号： H01L21/30 ,  H01L25/00 ,  H01L21/20 ,  H01L21/3105 ,  H01L21/762

CPC分类号： H01L25/50 ,  H01L21/2007 ,  H01L21/3105 ,  H01L21/76251 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate, the second substrate having at least one reaction layer, with the following steps, especially the following sequence: forming a reservoir in a reservoir formation layer on the first contact surface, at least partial filling of the reservoir with a first educt or a first group of educts, the first contact surface making contact with the second contact surface for formation of a prebond connection, thinning of the second substrate and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with the second educt contained in the reaction layer of the second substrate.

摘要翻译： 本发明涉及一种用于将第一基板的第一接触表面接合到第二基板的第二接触表面的方法，所述第二基板具有至少一个反应层，具有以下步骤，特别是以下步骤：形成储存器 在所述第一接触表面上的储层形成层中，至少部分地填充所述储存器，所述储存器具有第一喷射或第一组离子，所述第一接触表面与所述第二接触表面接触以形成预结合连接， 在所述第一和第二接触表面之间形成永久性接合，至少部分地通过所述第一溶液与所述第二基底的反应层中包含的第二离子的反应而加强。

公开(公告)号：US20140154867A1

公开(公告)日：2014-06-05

申请号：US14232911

申请日：2011-08-30

申请人： Klaus Martinschitz ,  Markus Wimplinger ,  Bernhard Rebhan ,  Kurt Hingerl

发明人： Klaus Martinschitz ,  Markus Wimplinger ,  Bernhard Rebhan ,  Kurt Hingerl

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  B23K20/021 ,  B23K20/023 ,  B23K35/001 ,  B23K35/0255 ,  B23K35/262 ,  B23K35/302 ,  B23K2101/40 ,  H01L21/185 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0384 ,  H01L2224/04026 ,  H01L2224/05557 ,  H01L2224/05647 ,  H01L2224/0801 ,  H01L2224/08501 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/275 ,  H01L2224/27505 ,  H01L2224/278 ,  H01L2224/2784 ,  H01L2224/29019 ,  H01L2224/2908 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29166 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/29211 ,  H01L2224/29311 ,  H01L2224/29347 ,  H01L2224/3201 ,  H01L2224/325 ,  H01L2224/32501 ,  H01L2224/7565 ,  H01L2224/83013 ,  H01L2224/83022 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/1434 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/0105 ,  H01L2224/83

摘要： A method for bonding of a first solid substrate to a second solid substrate which contains a first material with the following steps, especially the following sequence: formation or application of a function layer which contains a second material to the second solid substrate, making contact of the first solid substrate with the second solid substrate on the function layer, pressing together the solid substrates for forming a permanent bond between the first and second solid substrate, at least partially reinforced by solid diffusion and/or phase transformation of the first material with the second material, an increase of volume on the function layer being caused.

摘要翻译： 一种用于将第一固体基质与含有第一材料的第二固体基质结合的方法，其特征在于以下步骤：形成或施加包含第二材料的功能层至第二固体基质，使第 所述第一固体基底具有所述功能层上的第二固体基底，将固体基底压在一起以在所述第一和第二固体基底之间形成永久性结合，至少部分地通过所述第一材料的固体扩散和/或相变而与 第二种材料，会引起功能层上的体积增加。