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    Nonvolatile semiconductor memory device
    3.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US09252291B2

    公开(公告)日：2016-02-02

    申请号：US13070108

    申请日：2011-03-23

    申请人： Jun Fujiki ,  Naoki Yasuda ,  Daisuke Matsushita

    发明人： Jun Fujiki ,  Naoki Yasuda ,  Daisuke Matsushita

    IPC分类号： H01L29/08 ,  H01L29/792 ,  G11C16/04 ,  H01L27/115

    CPC分类号： H01L29/792 ,  G11C16/04 ,  G11C16/0466 ,  G11C16/0483 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/7926

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first memory portion. The first memory portion includes a first base semiconductor layer, a first electrode, a first channel semiconductor layer, a first base tunnel insulating film, a first channel tunnel insulating, a first charge retention layer and a first block insulating film. The first channel semiconductor layer is provided between the first base semiconductor layer and the first electrode, and includes a first channel portion. The first base tunnel insulating film is provided between the first base semiconductor layer and the first channel semiconductor layer. The first channel tunnel insulating film is provided between the first electrode and the first channel portion. The first charge retention layer is provided between the first electrode and the first channel tunnel insulating film. The first block insulating film is provided between the first electrode and the first charge retention layer.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一存储器部分。 第一存储部分包括第一基极半导体层，第一电极，第一沟道半导体层，第一基极隧道绝缘膜，第一沟道隧道绝缘，第一电荷保持层和第一块绝缘膜。 第一沟道半导体层设置在第一基底半导体层和第一电极之间，并且包括第一沟道部分。 第一基极隧道绝缘膜设置在第一基极半导体层和第一沟道半导体层之间。 第一通道隧道绝缘膜设置在第一电极和第一沟道部分之间。 第一电荷保持层设置在第一电极和第一沟道隧道绝缘膜之间。 第一块绝缘膜设置在第一电极和第一电荷保持层之间。

    SEMICONDUCTOR MEMORY DEVICE
    5.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 失效
    半导体存储器件

    公开(公告)号：US20120075928A1

    公开(公告)日：2012-03-29

    申请号：US13246996

    申请日：2011-09-28

    申请人： Jun Fujiki ,  Kiwamu Sakuma ,  Naoki Yasuda ,  Yukio Nakabayashi ,  Masumi Saitoh

    发明人： Jun Fujiki ,  Kiwamu Sakuma ,  Naoki Yasuda ,  Yukio Nakabayashi ,  Masumi Saitoh

    IPC分类号： H01L29/792 ,  G11C11/34 ,  G11C11/412

    CPC分类号： H01L29/792 ,  G11C16/0466 ,  H01L27/11568 ,  H01L29/4234

    摘要： In a semiconductor layer, information is written by applying a first potential to a first electrode, applying a second potential that is lower than the first potential to all of back gate electrodes, applying a third potential that is higher than the first potential to the first to (i−1)th front gate electrodes, and applying a fourth potential that is between the second and third potentials to the ith and subsequent front gate electrodes, where “i” is a positive integer and identifies a specific location to which information is to be written.

    摘要翻译： 在半导体层中，通过向第一电极施加第一电位，向所有背栅电极施加低于第一电位的第二电位，向第一电极施加高于第一电位的第三电位，写入信息 到（i-1）个前栅电极，并且将第二和第三电位之间的第四电位施加到第i个和后续的前栅电极，其中“i”是正整数，并且识别信息的特定位置 要写

    Nonvolatile semiconductor memory device and method for driving same
    7.
    发明授权
    Nonvolatile semiconductor memory device and method for driving same 失效
    非易失性半导体存储器件及其驱动方法

    公开(公告)号：US07885106B2

    公开(公告)日：2011-02-08

    申请号：US12411746

    申请日：2009-03-26

    申请人： Jun Fujiki ,  Koichi Muraoka ,  Naoki Yasuda

    发明人： Jun Fujiki ,  Koichi Muraoka ,  Naoki Yasuda

    IPC分类号： G11C16/04 ,  G11C29/792 ,  G11C5/14 ,  G11C11/34

    CPC分类号： G11C16/26 ,  G11C11/5671 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/11565 ,  H01L27/11568

    摘要： A nonvolatile semiconductor memory device includes: a semiconductor substrate including a first channel, and a source region and a drain region provided on both sides of the first channel; a first insulating film provided on the first channel; a charge retention layer provided on the first insulating film; a second insulating film provided on the charge retention layer; and a semiconductor layer including a second channel provided on the second insulating film, and a source region and a drain region provided on both sides of the second channel.

    摘要翻译： 非易失性半导体存储器件包括：包括第一沟道的半导体衬底和设置在第一沟道两侧的源极区和漏极区; 设置在第一通道上的第一绝缘膜; 设置在所述第一绝缘膜上的电荷保持层; 设置在电荷保持层上的第二绝缘膜; 以及包括设置在第二绝缘膜上的第二通道的半导体层，以及设置在第二通道两侧的源极区域和漏极区域。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    8.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号：US20120068159A1

    公开(公告)日：2012-03-22

    申请号：US13070108

    申请日：2011-03-23

    申请人： Jun FUJIKI ,  Naoki Yasuda ,  Daisuke Matsushita

    发明人： Jun FUJIKI ,  Naoki Yasuda ,  Daisuke Matsushita

    IPC分类号： H01L29/08 ,  H01L29/792 ,  B82Y99/00

    CPC分类号： H01L29/792 ,  G11C16/04 ,  G11C16/0466 ,  G11C16/0483 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/7926

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first memory portion. The first memory portion includes a first base semiconductor layer, a first electrode, a first channel semiconductor layer, a first base tunnel insulating film, a first channel tunnel insulating, a first charge retention layer and a first block insulating film. The first channel semiconductor layer is provided between the first base semiconductor layer and the first electrode, and includes a first channel portion. The first base tunnel insulating film is provided between the first base semiconductor layer and the first channel semiconductor layer. The first channel tunnel insulating film is provided between the first electrode and the first channel portion. The first charge retention layer is provided between the first electrode and the first channel tunnel insulating film. The first block insulating film is provided between the first electrode and the first charge retention layer.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一存储器部分。 第一存储部分包括第一基极半导体层，第一电极，第一沟道半导体层，第一基极隧道绝缘膜，第一沟道隧道绝缘，第一电荷保持层和第一块绝缘膜。 第一沟道半导体层设置在第一基底半导体层和第一电极之间，并且包括第一沟道部分。 第一基极隧道绝缘膜设置在第一基极半导体层和第一沟道半导体层之间。 第一通道隧道绝缘膜设置在第一电极和第一沟道部分之间。 第一电荷保持层设置在第一电极和第一沟道隧道绝缘膜之间。 第一块绝缘膜设置在第一电极和第一电荷保持层之间。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME
    9.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME 失效
    非易失性半导体存储器件及其驱动方法

    公开(公告)号：US20100080062A1

    公开(公告)日：2010-04-01

    申请号：US12411746

    申请日：2009-03-26

    申请人： Jun Fujiki ,  Koichi Muraoka ,  Naoki Yasuda

    发明人： Jun Fujiki ,  Koichi Muraoka ,  Naoki Yasuda

    IPC分类号： G11C16/04 ,  H01L29/792 ,  G11C5/14 ,  G11C11/34

    CPC分类号： G11C16/26 ,  G11C11/5671 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/11565 ,  H01L27/11568

    摘要： A nonvolatile semiconductor memory device includes: a semiconductor substrate including a first channel, and a source region and a drain region provided on both sides of the first channel; a first insulating film provided on the first channel; a charge retention layer provided on the first insulating film; a second insulating film provided on the charge retention layer; and a semiconductor layer including a second channel provided on the second insulating film, and a source region and a drain region provided on both sides of the second channel.

    摘要翻译： 非易失性半导体存储器件包括：包括第一沟道的半导体衬底和设置在第一沟道两侧的源极区和漏极区; 设置在第一通道上的第一绝缘膜; 设置在所述第一绝缘膜上的电荷保持层; 设置在电荷保持层上的第二绝缘膜; 以及包括设置在第二绝缘膜上的第二通道的半导体层，以及设置在第二通道两侧的源极区域和漏极区域。