公开(公告)号：US20230404903A1

公开(公告)日：2023-12-21

申请号：US18038046

申请日：2020-11-23

申请人： SANG HWANG MI-IN CO., LTD

发明人： Youngsang Shin

IPC分类号： A61K8/9728 ,  A61Q17/04 ,  A61Q19/08

CPC分类号： A61K8/9728 ,  A61Q17/04 ,  A61Q19/08

摘要： A composition for treating skin damage caused by fine dust and ultraviolet rays according to the present invention contains extracts of black hoof mushrooms, shiitake mushrooms and oyster mushrooms, uses natural ingredients as the main ingredients, thus having the effect of relieving heavy metal damage and skin irritation caused by fine dust and ultraviolet rays without irritating the skin, and has the effect of protecting the skin.

公开(公告)号：US09601420B2

公开(公告)日：2017-03-21

申请号：US14018709

申请日：2013-09-05

申请人： Yoo-Sang Hwang ,  Hyun-Woo Chung ,  Dae-Ik Kim

发明人： Yoo-Sang Hwang ,  Hyun-Woo Chung ,  Dae-Ik Kim

IPC分类号： H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L27/108 ,  H01L23/532 ,  H01L21/762

CPC分类号： H01L23/49811 ,  H01L21/76229 ,  H01L21/7682 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/53295 ,  H01L27/10885 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a stack structure of a conductive line and an insulating capping line extending in a first direction on a substrate, a plurality of contact plugs arranged in a row along the first direction and having sidewall surfaces facing the conductive line with air spaces between the sidewall surfaces and the conductive line, and a support interposed between the insulating capping line and the contact plugs to limit the height of the air spaces. The width of the support varies or the support is present only intermittently in the first direction. In a method of manufacturing the semiconductor devices, a sacrificial spacer is formed on the side of the stack structure, the spacer is recessed, a support layer is formed in the recess, the support layer is etched to form the support, and then the remainder of the spacer is removed to provide the air spaces.

公开(公告)号：US09254088B2

公开(公告)日：2016-02-09

申请号：US11785233

申请日：2007-04-16

申请人： Kun Kook Park ,  Jin Sang Hwang ,  Kun Soo Shin

发明人： Kun Kook Park ,  Jin Sang Hwang ,  Kun Soo Shin

IPC分类号： A61B5/05 ,  A61B5/00 ,  H04R5/033

CPC分类号： A61B5/6803 ,  A61B5/0059 ,  A61B5/6814 ,  A61B5/6887 ,  A61B2562/0219 ,  H04R5/033

摘要： A headset device includes a headset body, a connection unit to move relative to the headset body, and a sensor unit having a light emitting element and a light receiving element to sense a biosignal, the sensor unit mounted to the connection unit to make contact with a human body. The sensor unit may measure a biosignal of a user, and the headset body and the sensor unit are indirectly connected by the connection unit. Accordingly, the sensor unit may be isolated from movement or vibration received through the headset body.

摘要翻译： 耳机设备包括耳机主体，相对于耳机主体移动的连接单元以及具有发光元件和感光元件以感测生物信号的传感器单元，所述传感器单元安装到连接单元以与 一个人体 传感器单元可以测量用户的生物信号，耳机主体和传感器单元通过连接单元间接连接。 因此，传感器单元可以与通过耳机主体接收的移动或振动隔离。

公开(公告)号：US20150117090A1

公开(公告)日：2015-04-30

申请号：US14328300

申请日：2014-07-10

申请人： Young-bae KIM ,  Hyun-sang HWANG

发明人： Young-bae KIM ,  Hyun-sang HWANG

IPC分类号： H01L45/00 ,  G11C13/00

CPC分类号： H01L45/1206 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2013/0083 ,  G11C2213/32 ,  G11C2213/52 ,  G11C2213/53 ,  H01L27/249 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

摘要： A three-terminal synapse device may include a drain layer formed on a substrate, a gate layer formed on the drain layer, a source layer vertically stacked on the substrate and facing the drain layer and the gate layer. First and second vertical insulating layers may be formed between the source layer and a stack including the drain layer and the gate layer. The first and second vertical insulating layers have different ion mobilities from each other. The first and second vertical insulating layers may cover side surfaces of the drain layer and the gate layer. The ion mobility of the second vertical insulating layer may be greater than that of the first vertical insulating layer.

摘要翻译： 三端突触装置可以包括形成在衬底上的漏极层，形成在漏极层上的栅极层，垂直堆叠在衬底上并面向漏极层和栅极层的源极层。 第一和第二垂直绝缘层可以形成在源极层和包括漏极层和栅极层的堆叠之间。 第一和第二垂直绝缘层具有彼此不同的离子迁移率。 第一和第二垂直绝缘层可以覆盖漏极层和栅极层的侧表面。 第二垂直绝缘层的离子迁移率可以大于第一垂直绝缘层的离子迁移率。

公开(公告)号：US20150099344A1

公开(公告)日：2015-04-09

申请号：US14283666

申请日：2014-05-21

申请人： Dae-ik KIM ,  Hyoung-sub KIM ,  Yoo-sang HWANG ,  Nak-jin SON ,  Ji-young KIM

发明人： Dae-ik KIM ,  Hyoung-sub KIM ,  Yoo-sang HWANG ,  Nak-jin SON ,  Ji-young KIM

IPC分类号： H01L21/762 ,  H01L21/768

CPC分类号： H01L21/76224 ,  H01L21/743 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891

摘要： Provided is a method of manufacturing a semiconductor device. The method includes forming a sacrificial film as part of a process of forming a semiconductor device. The sacrificial film has a relatively high etch selectivity with respect to other materials of the semiconductor device so as to reduce loss of etching masks and improve the quality of a components (e.g., buried contacts) of the semiconductor device.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括形成牺牲膜作为形成半导体器件的工艺的一部分。 牺牲膜相对于半导体器件的其它材料具有相对高的蚀刻选择性，以便减少蚀刻掩模的损耗并提高半导体器件的部件（例如，埋入触点）的质量。

公开(公告)号：US08883951B2

公开(公告)日：2014-11-11

申请号：US13820298

申请日：2011-09-16

申请人： Seung Sang Hwang ,  Kyung Youl Baek ,  He Seung Lee ,  Soon Man Hong ,  Soon Jong Kwak ,  Chong Min Koo

发明人： Seung Sang Hwang ,  Kyung Youl Baek ,  He Seung Lee ,  Soon Man Hong ,  Soon Jong Kwak ,  Chong Min Koo

IPC分类号： C08G77/04 ,  C08L83/04 ,  C07F7/21 ,  C08G77/16

CPC分类号： C08G77/04 ,  C07F7/21 ,  C08G77/045 ,  C08G77/16 ,  C08L83/04

摘要： A monomer composition for polymerizing a branch-type silsesquioxane polymer is disclosed. The monomer composition includes hydroxy-substituted cyclic siloxane in a solvent, and the hydroxy-substituted cyclic siloxane includes stereoisomers of cyclic siloxane of cis, trans, random and twist structures at controlled ratios. Also disclosed are a branch-type silsesquioxane polymer synthesized by polymerizing the monomer composition for polymerizing a branch-type silsesquioxane polymer, and a method for synthesizing the same. In accordance with the disclosure, the isomers can be isolated stably at desired ratios. The isolated isomers may be polymerized into polymers of various types. Since the polymers exhibit low dielectric property, they may be utilized as low dielectric materials.

摘要翻译： 公开了用于聚合支化型倍半硅氧烷聚合物的单体组合物。 单体组合物在溶剂中包括羟基取代的环状硅氧烷，羟基取代的环状硅氧烷包括顺式，反式，无规和扭曲结构的环状硅氧烷的立体异构体，其受控比例。 还公开了通过使用于聚合支化型倍半硅氧烷聚合物的单体组合物聚合而合成的分支型倍半硅氧烷聚合物及其合成方法。 根据本公开内容，可以以期望的比例稳定地分离异构体。 分离的异构体可以聚合成各种类型的聚合物。 由于聚合物表现出低介电性能，因此它们可以用作低电介质材料。

公开(公告)号：US08690998B2

公开(公告)日：2014-04-08

申请号：US13313374

申请日：2011-12-07

申请人： Jun Ho Ji ,  In Sang Hwang ,  Byeong Cheol Yoon ,  Jun Young Lee

发明人： Jun Ho Ji ,  In Sang Hwang ,  Byeong Cheol Yoon ,  Jun Young Lee

IPC分类号： B03C3/47

CPC分类号： B03C3/08 ,  B03C3/12 ,  B03C3/41 ,  B03C3/47 ,  B03C2201/04

摘要： An electric precipitator includes a charge unit disposed at an upstream part and a dust collection unit disposed at a downstream part, the charge unit includes charge electrodes and a discharge wire disposed between two neighboring charge electrodes and separated from the charge electrodes, the dust collection unit includes high voltage electrodes, front ends of which are opposite to the charge unit, and low voltage electrodes, front ends of which are opposite to the charge unit and which alternate with high voltage electrodes, and the front ends of high voltage electrodes protrude toward the charge unit as compared to the front ends of low voltage electrodes, thereby guiding electrons to the discharge electrodes due to an electric field formed between the front ends of the high voltage electrodes and the discharge electrodes and thus reducing current leakage through the low voltage electrodes.

摘要翻译： 电除尘器包括设置在上游部分的充电单元和设置在下游部分的集尘单元，所述充电单元包括充电电极和布置在两个相邻充电电极之间并与充电电极分离的放电线，所述集尘单元 包括其前端与充电单元相对的高压电极，以及低压电极，其前端与充电单元相对，并与高电压电极交替，并且高压电极的前端朝向 充电单元与低电压电极的前端相比，由于在高电压电极的前端和放电电极之间形成的电场而将电子引导到放电电极，从而减少了通过低压电极的电流泄漏。

公开(公告)号：US20130288472A1

公开(公告)日：2013-10-31

申请号：US13761376

申请日：2013-02-07

申请人： Jay-Bok Choi ,  Yoo-Sang Hwang ,  Ah-Young Kim ,  Ye-Ro Lee ,  Gyo-Young Jin ,  Hyeong-sun Hong

发明人： Jay-Bok Choi ,  Yoo-Sang Hwang ,  Ah-Young Kim ,  Ye-Ro Lee ,  Gyo-Young Jin ,  Hyeong-sun Hong

IPC分类号： H01L29/423

CPC分类号： H01L29/42312 ,  H01L27/0207 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L29/4236 ,  H01L29/66621

摘要： A method of fabricating a semiconductor device comprises forming a first and a second parallel field regions in a substrate, the parallel field regions are extended in a first direction, forming a first and a second gate capping layer in a first and a second gate trench formed in the substrate respectively, removing the gate capping layers partially so that a first landing pad hole is expanded to overlap the gate capping layers buried in the substrate partially, forming a landing pad material layer in the first space, and forming a bit line contact landing pad by planarizing the landing pad material layer to the level of top surfaces of the capping layers.

摘要翻译： 制造半导体器件的方法包括在衬底中形成第一和第二平行场区域，所述平行场区域沿第一方向延伸，在形成的第一和第二栅极沟槽中形成第一和第二栅极覆盖层 在基板中分别去除栅极覆盖层，使得第一着陆焊盘孔被扩展以部分地覆盖掩埋在衬底中的栅极覆盖层，在第一空间中形成层叠焊盘材料层，并形成位线接触层 通过将着陆垫材料层平坦化到覆盖层的顶表面的水平面。

公开(公告)号：US20130197043A1

公开(公告)日：2013-08-01

申请号：US13819624

申请日：2011-08-31

申请人： Heon joong Kang ,  Hoo-Sang Hwang ,  Jung Wook Chin

发明人： Heon joong Kang ,  Hoo-Sang Hwang ,  Jung Wook Chin

IPC分类号： C07D277/26 ,  C07D277/30 ,  C07D417/06

CPC分类号： C07D277/26 ,  A23K20/111 ,  A23L2/02 ,  A23L2/52 ,  A23L33/10 ,  A61K31/41 ,  A61K31/4155 ,  A61K31/422 ,  A61K31/426 ,  A61K31/427 ,  A61K31/4439 ,  C07D277/30 ,  C07D293/06 ,  C07D417/06 ,  C07D421/06

摘要： Disclosed is a novel use of a PPAR δ agonist, and more particularly, a fetal reprogramming effect of a PPAR δ agonist. A PPAR δ agonist adjusts calcium ion during embryo genesis and a early fetal development period to increase slow muscle fiber and to thus improve muscle endurance, thereby improving lipid and glucose metabolism and reprogramming the metabolism of the entire body, thus preventing/inhibiting the occurrence of metabolic diseases, such as obesity and diabetes in an adult body caused by a high-fat diet and a lack of exercise, and improving memory for an adult.

摘要翻译： 公开了PPARδ激动剂的新用途，更具体地，PPARδ激动剂的胎儿重编程效应。 PPARδ激动剂在胚胎发生和早期胎儿发育期间调节钙离子以增加慢肌纤维，从而提高肌肉耐力，从而改善脂质和葡萄糖代谢并重新编程整个身体的代谢，从而预防/抑制 由高脂肪饮食和运动不足引起的成人身体中的代谢性疾病，如肥胖和糖尿病，以及改善成年人的记忆力。

公开(公告)号：US08473025B2

公开(公告)日：2013-06-25

申请号：US13473258

申请日：2012-05-16

申请人： Kun Soo Shin ,  Jin Sang Hwang ,  Jong Pal Kim ,  Hyung Sok Yeo ,  Sang Ryong Kim

发明人： Kun Soo Shin ,  Jin Sang Hwang ,  Jong Pal Kim ,  Hyung Sok Yeo ,  Sang Ryong Kim

IPC分类号： A61B5/04

CPC分类号： A61B5/0416 ,  A61B5/0006 ,  A61B5/04087

摘要： A biosignal measurement device includes an electrode and a signal processing member. The electrode includes an insulation sheet having a hole, a device contact portion provided on the top surface of the insulation sheet and a body contact portion provided on the bottom surface of the insulation sheet, the device contact portion and the body contact portion electrically connected to each other via the hole. The signal processing member includes an externally exposed terminal to make surface contact with the device contact portion, an analog signal processing unit, an A/D signal converter and a digital signal processing unit. Also, the device contact portion and the body contact portion are formed of a material which is both conductive and adhesive. Accordingly, the signal processing member may be directly attached. Noise may be reduced. Also, a biosignal may be accurately measured.

摘要翻译： 生物信号测量装置包括电极和信号处理部件。 电极包括具有孔的绝缘片，设置在绝缘片的顶表面上的器件接触部分和设置在绝缘片的底表面上的本体接触部分，该器件接触部分和本体接触部分电连接到 彼此通过孔。 信号处理部件包括外部暴露端子以与器件接触部分进行表面接触，模拟信号处理单元，A / D信号转换器和数字信号处理单元。 此外，器件接触部分和身体接触部分由导电和粘合剂的材料形成。 因此，信号处理部件可以直接安装。 噪音可能会降低。 此外，可以精确地测量生物信号。