公开(公告)号：US08853441B2

公开(公告)日：2014-10-07

申请号：US13557893

申请日：2012-07-25

申请人： Jung Hoon Oh ,  Dae Kyung Yoon ,  Seung Duk Cho ,  So Jeong Park

发明人： Jung Hoon Oh ,  Dae Kyung Yoon ,  Seung Duk Cho ,  So Jeong Park

IPC分类号： C07C69/013 ,  C07C69/017 ,  C07C309/02 ,  C07C309/39 ,  C07C309/44 ,  C07C381/12 ,  G03F7/00 ,  C07C309/12 ,  G03F7/004 ,  C07D333/46 ,  C07C309/06 ,  C07D307/64 ,  G03C1/00 ,  G03F7/039

CPC分类号： C07C309/06 ,  C07C309/02 ,  C07C309/12 ,  C07C381/12 ,  C07C2602/42 ,  C07C2603/74 ,  C07D307/64 ,  C07D333/46 ,  G03F7/00 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397

摘要： A sulfonium compound represented by the following formula (1), a photoacid generator containing the sulfonium compound, and a resist composition containing the photoacid generator are provided: wherein X represents an electron donor group; R1 and R2 each independently represent an alkyl group or the like; R4 to R6 each independently represent an alkyl group, or the like; R3 represents a cyclic alkenediyl group or the like; and −A represents an anion. The sulfonium compound has a photon yield that is controllable by introducing different absorbers to the cation region in one molecule, can address the inconvenience of using a mixture of different photoacid generators when the sulfonium compound is applied as a photoacid generator, has excellent miscibility in a resist, and has enhanced resolution and line edge roughness.

摘要翻译： 提供由下式（1）表示的锍化合物，含有锍化合物的光酸产生剂和含有光酸产生剂的抗蚀剂组合物，其中X表示电子给体基团; R1和R2各自独立地表示烷基等; R4至R6各自独立地表示烷基等; R3表示环状亚烯基等; -A表示阴离子。 锍化合物具有通过在一个分子中向阳离子区域引入不同吸收剂可控制的光子产率，可以解决当将锍化合物用作光致酸发生剂时使用不同光酸产生剂的混合物的不便之处，在 抗蚀，并具有增强的分辨率和线边缘粗糙度。

公开(公告)号：US08638585B2

公开(公告)日：2014-01-28

申请号：US13137409

申请日：2011-08-12

申请人： Jaesoo Lee ,  Kangho Roh ,  Wonhee Cho ,  Hojun Shim ,  Youngjoon Choi ,  Jaehoon Heo ,  Je-Hyuck Song ,  Seung-Duk Cho ,  Seontaek Kim ,  Moonwook Oh ,  Jong Tae Park ,  Wonmoon Cheon ,  Chanik Park ,  Yang-sup Lee

发明人： Jaesoo Lee ,  Kangho Roh ,  Wonhee Cho ,  Hojun Shim ,  Youngjoon Choi ,  Jaehoon Heo ,  Je-Hyuck Song ,  Seung-Duk Cho ,  Seontaek Kim ,  Moonwook Oh ,  Jong Tae Park ,  Wonmoon Cheon ,  Chanik Park ,  Yang-sup Lee

IPC分类号： G11C5/02

CPC分类号： G11C11/5628 ,  G06F12/0246 ,  G06F2212/7201 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3431 ,  G11C29/00 ,  G11C2211/5621 ,  Y02D10/13

摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

公开(公告)号：US08565021B2

公开(公告)日：2013-10-22

申请号：US13137401

申请日：2011-08-11

申请人： Jaesoo Lee ,  Kangho Roh ,  Wonhee Cho ,  Hojun Shim ,  Youngjoon Choi ,  Jaehoon Heo ,  Je-Hyuck Song ,  Seung-Duk Cho ,  Seontaek Kim ,  Moonwook Oh ,  Jong Tae Park ,  Wonmoon Cheon ,  Chanik Park ,  Yang-sup Lee

发明人： Jaesoo Lee ,  Kangho Roh ,  Wonhee Cho ,  Hojun Shim ,  Youngjoon Choi ,  Jaehoon Heo ,  Je-Hyuck Song ,  Seung-Duk Cho ,  Seontaek Kim ,  Moonwook Oh ,  Jong Tae Park ,  Wonmoon Cheon ,  Chanik Park ,  Yang-sup Lee

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G06F12/0246 ,  G06F2212/7201 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3431 ,  G11C29/00 ,  G11C2211/5621 ,  Y02D10/13

摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

公开(公告)号：US08357482B2

公开(公告)日：2013-01-22

申请号：US13186101

申请日：2011-07-19

申请人： Jong-Don Lee ,  Jun-Ho Lee ,  Shin-Hyo Bae ,  Seung-Hee Hong ,  Seung-Duk Cho

发明人： Jong-Don Lee ,  Jun-Ho Lee ,  Shin-Hyo Bae ,  Seung-Hee Hong ,  Seung-Duk Cho

IPC分类号： G02B5/22 ,  C08K5/03 ,  C08L33/00 ,  C08L63/00

CPC分类号： C07C69/76 ,  C07C69/753 ,  C07C69/92 ,  C07C317/44 ,  C07C323/62 ,  C07C2602/44 ,  G03F7/091 ,  Y10T428/24612

摘要： A light absorbent for forming an organic anti-reflective layer, represented by the following formula 1 or formula 2, is provided: wherein A represents a substituted or unsubstituted, linear or branched, saturated tetravalent hydrocarbon group, a substituted or unsubstituted, linear or branched, saturated hydrocarbon group and containing one or more heteroatoms, a substituted or unsubstituted aromatic group, a substituted or unsubstituted heteroaromatic group, a substituted or unsubstituted alicyclic group, a substituted or unsubstituted heteroalicyclic group, a substituted or unsubstituted diaryl ether, a substituted or unsubstituted diaryl sulfide, a substituted or unsubstituted diaryl sulfoxide, a substituted or unsubstituted diaryl ketone, or a substituted or unsubstituted diaryl bisphenol A; R1, R2, and R3 each independently represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted acetal group, or a substituted or unsubstituted hydroxyl group; and n is an integer from 2 to 500.

摘要翻译： 提供用于形成由下式1或式2表示的有机抗反射层的光吸收剂：其中A表示取代或未取代的直链或支链饱和四价烃基，取代或未取代的直链或支链 饱和烃基，含有一个或多个杂原子，取代或未取代的芳族基团，取代或未取代的杂芳族基团，取代或未取代的脂环族基团，取代或未取代的杂脂族基团，取代或未取代的二芳基醚，取代或未取代的 二芳基硫醚，取代或未取代的二芳基亚砜，取代或未取代的二芳基酮，或取代或未取代的二芳基双酚A; R 1，R 2和R 3各自独立地表示氢原子，卤素原子，取代或未取代的烷基，取代或未取代的芳基，取代或未取代的缩醛基或取代或未取代的羟基; n为2〜500的整数。

公开(公告)号：US20110299335A1

公开(公告)日：2011-12-08

申请号：US13137401

申请日：2011-08-11

申请人： Jaesoo Lee ,  Kangho Roh ,  Wonhee Cho ,  Hojun Shim ,  Youngjoon Choi ,  Jaehoon Heo ,  Je-Hyuck Song ,  Seung-Duk Cho ,  Seontaek Kim ,  Moonwook Oh ,  Jong Tae Park ,  Wonmoon Cheon ,  Chanik Park ,  Yang-sup Lee

发明人： Jaesoo Lee ,  Kangho Roh ,  Wonhee Cho ,  Hojun Shim ,  Youngjoon Choi ,  Jaehoon Heo ,  Je-Hyuck Song ,  Seung-Duk Cho ,  Seontaek Kim ,  Moonwook Oh ,  Jong Tae Park ,  Wonmoon Cheon ,  Chanik Park ,  Yang-sup Lee

IPC分类号： G11C16/10

CPC分类号： G11C11/5628 ,  G06F12/0246 ,  G06F2212/7201 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3431 ,  G11C29/00 ,  G11C2211/5621 ,  Y02D10/13

摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

公开(公告)号：US20110272643A1

公开(公告)日：2011-11-10

申请号：US13186101

申请日：2011-07-19

申请人： Jong-Don Lee ,  Jun-Ho Lee ,  Shin-Hyo Bae ,  Seung-Hee Hong ,  Seung-Duk Cho

发明人： Jong-Don Lee ,  Jun-Ho Lee ,  Shin-Hyo Bae ,  Seung-Hee Hong ,  Seung-Duk Cho

IPC分类号： G02B5/22 ,  C08K5/103 ,  C08L63/00 ,  C08L33/00

CPC分类号： C07C69/76 ,  C07C69/753 ,  C07C69/92 ,  C07C317/44 ,  C07C323/62 ,  C07C2602/44 ,  G03F7/091 ,  Y10T428/24612

摘要： A light absorbent for forming an organic anti-reflective layer, represented by the following formula 1 or formula 2, is provided: wherein A represents a substituted or unsubstituted, linear or branched, saturated tetravalent hydrocarbon group, a substituted or unsubstituted, linear or branched, saturated hydrocarbon group and containing one or more heteroatoms, a substituted or unsubstituted aromatic group, a substituted or unsubstituted heteroaromatic group, a substituted or unsubstituted alicyclic group, a substituted or unsubstituted heteroalicyclic group, a substituted or unsubstituted diaryl ether, a substituted or unsubstituted diaryl sulfide, a substituted or unsubstituted diaryl sulfoxide, a substituted or unsubstituted diaryl ketone, or a substituted or unsubstituted diaryl bisphenol A; R1, R2, and R3 each independently represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted acetal group, or a substituted or unsubstituted hydroxyl group; and n is an integer from 2 to 500.

摘要翻译： 提供用于形成由下式1或式2表示的有机抗反射层的光吸收剂：其中A表示取代或未取代的直链或支链饱和四价烃基，取代或未取代的直链或支链 饱和烃基，含有一个或多个杂原子，取代或未取代的芳族基团，取代或未取代的杂芳族基团，取代或未取代的脂环族基团，取代或未取代的杂脂族基团，取代或未取代的二芳基醚，取代或未取代的 二芳基硫醚，取代或未取代的二芳基亚砜，取代或未取代的二芳基酮，或取代或未取代的二芳基双酚A; R 1，R 2和R 3各自独立地表示氢原子，卤素原子，取代或未取代的烷基，取代或未取代的芳基，取代或未取代的缩醛基或取代或未取代的羟基; n为2〜500的整数。

公开(公告)号：US08614919B2

公开(公告)日：2013-12-24

申请号：US13137422

申请日：2011-08-15

申请人： Jaesoo Lee ,  Kangho Roh ,  Wonhee Cho ,  Hojun Shim ,  Youngjoon Choi ,  Jaehoon Heo ,  Je-Hyuck Song ,  Seung-Duk Cho ,  Seontaek Kim ,  Moonwook Oh ,  Jong Tae Park ,  Wonmoon Cheon ,  Chanik Park ,  Yang-sup Lee

发明人： Jaesoo Lee ,  Kangho Roh ,  Wonhee Cho ,  Hojun Shim ,  Youngjoon Choi ,  Jaehoon Heo ,  Je-Hyuck Song ,  Seung-Duk Cho ,  Seontaek Kim ,  Moonwook Oh ,  Jong Tae Park ,  Wonmoon Cheon ,  Chanik Park ,  Yang-sup Lee

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G06F12/0246 ,  G06F2212/7201 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3431 ,  G11C29/00 ,  G11C2211/5621 ,  Y02D10/13

摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

公开(公告)号：US20130151760A1

公开(公告)日：2013-06-13

申请号：US13601105

申请日：2012-08-31

申请人： Seung-Duk CHO ,  Hojun SHIM ,  Kijo JUNG

发明人： Seung-Duk CHO ,  Hojun SHIM ,  Kijo JUNG

IPC分类号： G06F12/00

CPC分类号： G06F3/0647 ,  G06F1/30 ,  G06F3/0659 ,  G06F12/0246 ,  G11C7/24

摘要： Disclosed is a memory system which includes a nonvolatile memory device configured to store data information; and a memory controller configured to control the nonvolatile memory device. The memory controller provides the nonvolatile memory device with a program command sequence including program speed information according to an urgency level of an internally requested program operation.

摘要翻译： 本发明公开了一种存储系统，包括配置为存储数据信息的非易失性存储器件; 以及配置为控制非易失性存储器件的存储器控​​制器。 存储器控制器根据内部请求的程序操作的紧急程度向非易失性存储器件提供包括程序速度信息的程序命令序列。

公开(公告)号：US20090106509A1

公开(公告)日：2009-04-23

申请号：US12238592

申请日：2008-09-26

申请人： Ho-Jun SHIM ,  Je-Hyuck SONG ,  Seung-Duk CHO

发明人： Ho-Jun SHIM ,  Je-Hyuck SONG ,  Seung-Duk CHO

IPC分类号： G06F12/00

CPC分类号： G06F12/0246 ,  G06F2212/7202 ,  G06F2212/7208

摘要： Provided are a memory system and a method of driving the same. The method includes setting microcodes in a top control sequencer and multiple channel control sequencers, and executing the microcode set in the top control sequencer. The method may further include checking execution results of the microcode.

摘要翻译： 提供一种存储系统及其驱动方法。 该方法包括在顶部控制定序器和多个通道控制定序器中设置微码，以及执行顶部控制定序器中的微代码集。 该方法还可以包括检查微代码的执行结果。

公开(公告)号：US20080318167A1

公开(公告)日：2008-12-25

申请号：US12214430

申请日：2008-06-19

申请人： Myung-Woong Kim ,  Joo-Hyeon Park ,  Young-Taek Lim ,  Hyung-Gi Kim ,  Jun-Ho Lee ,  Jong-Don Lee ,  Seung-Duk Cho

发明人： Myung-Woong Kim ,  Joo-Hyeon Park ,  Young-Taek Lim ,  Hyung-Gi Kim ,  Jun-Ho Lee ,  Jong-Don Lee ,  Seung-Duk Cho

IPC分类号： G03F7/20 ,  C08F222/06 ,  C08L37/00 ,  C08K5/053 ,  C08K5/1515 ,  C08K5/34 ,  C08K5/10 ,  C08K5/3492 ,  C08K5/21 ,  C08K5/22

CPC分类号： C09D133/10 ,  C08F220/14 ,  C08F220/18 ,  C08F222/06 ,  C08K5/10 ,  C08K5/34924 ,  C08K5/42 ,  C08L31/02 ,  C08L33/10 ,  C08L35/06 ,  C09D131/02 ,  C09D135/06 ,  G03F7/091 ,  Y10S438/952 ,  C08L2666/04

摘要： The present invention provides an organic anti-reflection coating composition comprising a copolymer represented by the following Formula 1, a light absorbent, a thermal acid generating agent, and a curing agent: wherein R1, R2 and R3 are each independent to each; R1 represents hydrogen or an alkyl group having 1 to 10 carbon atoms; R2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms or an arylalkyl group having 1 to 20 carbon atoms; R3 is hydrogen or a methyl group; m and n are repeating units in the main chain, while m+n=1, and they have values of 0.05

摘要翻译： 本发明提供一种有机防反射涂料组合物，其包含由下式1表示的共聚物，光吸收剂，热酸产生剂和固化剂：其中R1，R2和R3各自独立; R1表示氢或碳原子数1〜10的烷基。 R 2表示氢，碳原子数1〜10的烷基或碳原子数1〜20的芳烷基。 R3是氢或甲基; m和n是主链中的重复单元，而m + n = 1，并且它们具有0.05