公开(公告)号：US20130334561A1

公开(公告)日：2013-12-19

申请号：US13527318

申请日：2012-06-19

申请人： Hsiu-Jen LIN ,  Jian-Shian Lin ,  Shau-Yi Chen ,  Jen-Hui Tsai

发明人： Hsiu-Jen LIN ,  Jian-Shian Lin ,  Shau-Yi Chen ,  Jen-Hui Tsai

IPC分类号： H01L33/48 ,  H01L33/62

CPC分类号： H01L33/0079 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L33/0095 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/29109 ,  H01L2224/29113 ,  H01L2224/83097 ,  H01L2224/83191 ,  H01L2224/83207 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/94 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/01083 ,  H01L2924/0105 ,  H01L2924/0103 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/27 ,  H01L2924/00

摘要： A method for bonding an LED wafer, a method for manufacturing an LED chip, and a bonding structure are provided. The method for bonding an LED wafer includes the following steps. A first metal film is formed on an LED wafer. A second metal film is formed on a substrate. A bonding material layer whose melting point is lower than or equal to about 110° C. is formed on the surface of the first metal film. The LED wafer is placed on the substrate. The bonding material layer is heated at a pre-solid reaction temperature for a pre-solid time to perform a pre-solid reaction. The bonding material layer is heated at a diffusion reaction temperature for a diffusing time to perform a diffusion reaction, wherein the melting points of the first and the second inter-metallic layers after diffusion reaction are higher than about 110° C.

摘要翻译： 提供一种用于结合LED晶片的方法，制造LED芯片的方法和接合结构。 用于结合LED晶片的方法包括以下步骤。 在LED晶片上形成第一金属膜。 在基板上形成第二金属膜。 在第一金属膜的表面上形成熔点低于或等于约110℃的接合材料层。 将LED晶片放置在基板上。 将接合材料层在预固体反应温度下加热预固化时间以进行预固体反应。 接合材料层在扩散反应温度下加热扩散时间以进行扩散反应，其中扩散反应后第一和第二金属间层的熔点高于约110℃。

公开(公告)号：US20120256228A1

公开(公告)日：2012-10-11

申请号：US13530396

申请日：2012-06-22

申请人： Hsiu Jen Lin ,  Jian Shian Lin ,  Shau Yi Chen ,  Chieh Lung Lai

发明人： Hsiu Jen Lin ,  Jian Shian Lin ,  Shau Yi Chen ,  Chieh Lung Lai

IPC分类号： H01L33/62

CPC分类号： H01L23/53247 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/30 ,  H01L33/40 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/83193 ,  H01L2224/83207 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15724 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01083 ,  H01L2924/00014

摘要： An LED includes a first intermetallic layer, a first metal thin film layer, an LED chip, a substrate, a second metal thin film layer, and a second intermetallic layer. The first metal thin film layer is located on the first intermetallic layer. The LED chip is located on the first metal thin film layer. The second metal thin film layer is located on the substrate. The second intermetallic layer is located on the second metal thin film layer, and the first intermetallic layer is located on the second intermetallic layer. Materials of the first and the second metal thin film layer are selected from a group consisting of Au, Ag, Cu, and Ni. Materials of the intermetallic layers are selected from a group consisting of a Cu—In—Sn intermetallics, an Ni—In—Sn intermetallics, an Ni—Bi intermetallics, an Au—In intermetallics, an Ag—In intermetallics, an Ag—Sn intermetallics, and an Au—Bi intermetallics.

摘要翻译： LED包括第一金属间层，第一金属薄膜层，LED芯片，基板，第二金属薄膜层和第二金属间层。 第一金属薄膜层位于第一金属间层上。 LED芯片位于第一金属薄膜层上。 第二金属薄膜层位于基板上。 第二金属间化合物层位于第二金属薄膜层上，第一金属间化合物层位于第二金属间层上。 第一和第二金属薄膜层的材料选自由Au，Ag，Cu和Ni组成的组。 金属间层的材料选自Cu-In-Sn金属间化合物，Ni-In-Sn金属间化合物，Ni-Bi金属间化合物，Au-In金属间化合物，Ag-In金属间化合物，Ag-Sn 金属间化合物和Au-Bi金属间化合物。

公开(公告)号：US08236687B2

公开(公告)日：2012-08-07

申请号：US12854278

申请日：2010-08-11

申请人： Hsiu-Jen Lin ,  Jian-Shian Lin ,  Shau-Yi Chen ,  Chieh-Lung Lai

发明人： Hsiu-Jen Lin ,  Jian-Shian Lin ,  Shau-Yi Chen ,  Chieh-Lung Lai

IPC分类号： H01L21/44

CPC分类号： H01L23/53247 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/30 ,  H01L33/40 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/83193 ,  H01L2224/83207 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15724 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01083 ,  H01L2924/00014

摘要： A die-bonding method is suitable for die-bonding a LED chip having a first metal thin-film layer to a substrate. The method includes forming a second metal thin film layer on a surface of the substrate; forming a die-bonding material layer on the second metal thin film layer; placing the LED chip on the die-bonding material layer with the first metal thin film layer contacting the die-bonding material layer; heating the die-bonding material layer at a liquid -solid reaction temperature for a pre-curing time, so as to form a first intermetallic layer and a second intermetallic layer; and heating the die-bonding material layer at a solid-solid reaction temperature for a curing time for performing a solid-solid reaction. The liquid-solid reaction temperature and the solid-solid reaction temperature are both lower than 110° C., and a melting point of the first and second intermetallic layers after the solid-solid reaction is higher than 200° C.

摘要翻译： 芯片接合方法适合于将具有第一金属薄膜层的LED芯片芯片接合到基板上。 该方法包括在基板的表面上形成第二金属薄膜层; 在所述第二金属薄膜层上形成芯片接合材料层; 将第一金属薄膜层与芯片接合材料层接触，将LED芯片放置在芯片接合材料层上; 在液固固化反应温度下加热芯片接合材料层达预固化时间，以形成第一金属间层和第二金属间层; 并在固 - 固反应温度下加热芯片接合材料层进行固 - 固反应的固化时间。 液固反应温度和固 - 固反应温度均低于110℃，固 - 固反应后第一和第二金属间化合物的熔点高于200℃。

公开(公告)号：US20050220412A1

公开(公告)日：2005-10-06

申请号：US10901040

申请日：2004-07-29

申请人： Wen-Jiun Liu ,  Chien-Cheng Yang ,  Zhi-Cheng Hsiao ,  Shau-Yi Chen ,  Yun-Wen Lee

发明人： Wen-Jiun Liu ,  Chien-Cheng Yang ,  Zhi-Cheng Hsiao ,  Shau-Yi Chen ,  Yun-Wen Lee

IPC分类号： G02B6/12 ,  G02B6/125 ,  G02B6/26 ,  G02B6/42

CPC分类号： G02B6/125 ,  G02B2006/1215

摘要： An optical splitter with reflection suppression is disclosed. It includes an input waveguide and a plurality of receiving waveguides. The input waveguide has at least one output surface for transferring an incident light to the receiving surfaces of the receiving waveguides. Each of the output surfaces parallels the corresponding receiving surfaces, and an oblique angle is formed between the output surface and the progressing direction of the incident light.

摘要翻译： 公开了一种具有反射抑制的分光器。 它包括输入波导和多个接收波导。 输入波导具有用于将入射光传送到接收波导的接收表面的至少一个输出表面。 每个输出表面平行于相应的接收表面，并且在输出表面和入射光的前进方向之间形成倾斜角。

公开(公告)号：US20110127563A1

公开(公告)日：2011-06-02

申请号：US12854278

申请日：2010-08-11

申请人： Hsiu Jen Lin ,  Jian Shian Lin ,  Shau Yi Chen ,  Chieh Lung Lai

发明人： Hsiu Jen Lin ,  Jian Shian Lin ,  Shau Yi Chen ,  Chieh Lung Lai

IPC分类号： H01L33/62 ,  H01L21/50

CPC分类号： H01L23/53247 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/30 ,  H01L33/40 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/83193 ,  H01L2224/83207 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15724 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01083 ,  H01L2924/00014

摘要： A die-bonding method is suitable for die-bonding a LED chip having a first metal thin-film layer to a substrate. The method includes forming a second metal thin film layer on a surface of the substrate; forming a die-bonding material layer on the second metal thin film layer; placing the LED chip on the die-bonding material layer with the first metal thin film layer contacting the die-bonding material layer; heating the die-bonding material layer at a liquid-solid reaction temperature for a pre-curing time, so as to form a first intermetallic layer and a second intermetallic layer; and heating the die-bonding material layer at a solid-solid reaction temperature for a curing time, so as to perform a solid-solid reaction. The liquid-solid reaction temperature and the solid-solid reaction temperature are both lower than 110° C., and a melting point of the first and second intermetallic layers after the solid-solid reaction is higher than 200° C.

摘要翻译： 芯片接合方法适合于将具有第一金属薄膜层的LED芯片芯片接合到基板上。 该方法包括在基板的表面上形成第二金属薄膜层; 在所述第二金属薄膜层上形成芯片接合材料层; 将第一金属薄膜层与芯片接合材料层接触，将LED芯片放置在芯片接合材料层上; 在液固固体反应温度下加热芯片接合材料层预固化时间，以形成第一金属间层和第二金属间层; 并在固 - 固反应温度下加热芯片接合材料层达固化时间，以进行固 - 固反应。 液固反应温度和固 - 固反应温度均低于110℃，固 - 固反应后第一和第二金属间化合物的熔点高于200℃。

公开(公告)号：US20060110108A1

公开(公告)日：2006-05-25

申请号：US11227609

申请日：2005-09-16

申请人： Tsung-Fu Hsieh ,  Chien-Cheng Yang ,  Wen-Jiun Liu ,  Shau-Yi Chen ,  Jing-Yao Chang

发明人： Tsung-Fu Hsieh ,  Chien-Cheng Yang ,  Wen-Jiun Liu ,  Shau-Yi Chen ,  Jing-Yao Chang

IPC分类号： G02B6/36

CPC分类号： H02N1/008 ,  G02B6/422

摘要： A tunable light transceiver module for adjusting a photoelectric device is provided. The tunable structure includes a photoelectric device, a stage, and a set of two-dimensional actuators having a first direction actuator and a second direction actuator. The photoelectric device is installed on the stage. The first direction actuation device and the second direction actuation device are coupled to the stage for controlling the movement of the stage along the first direction and the second direction, which are parallel to the stage. The tunable module may comprise an additional vertical actuator for controlling the movement of the stage along the direction perpendicular to the stage, thus realizing the displacement adjustment in three dimensions.

摘要翻译： 提供了一种用于调节光电装置的可调光收发模块。 可调谐结构包括具有第一方向致动器和第二方向致动器的光电器件，载物台和一组二维致动器。 光电装置安装在舞台上。 第一方向致动装置和第二方向致动装置联接到载物台，用于控制载物台沿与平台平行的第一方向和第二方向的移动。 可调谐模块可以包括附加的垂直致动器，用于控制工作台沿垂直于工作台的方向的移动，从而实现三维位移调节。

公开(公告)号：US20110156071A1

公开(公告)日：2011-06-30

申请号：US12976374

申请日：2010-12-22

申请人： Chia Shen Cheng ,  Jian Shian Lin ,  Shau Yi Chen ,  Hsiu Jen Lin ,  Yao Chi Peng

发明人： Chia Shen Cheng ,  Jian Shian Lin ,  Shau Yi Chen ,  Hsiu Jen Lin ,  Yao Chi Peng

IPC分类号： H01L33/48

CPC分类号： H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/504 ,  H01L33/507

摘要： A multi-stack package light emitting diode (LED) includes an LED chip, a first fluorescent powder layer, a first optical bandpass filter layer and a second fluorescent powder layer. The LED chip generates an LED light. The first fluorescent powder layer and the second fluorescent powder layer respectively have a first fluorescent powder and a second fluorescent powder. The first fluorescent powder and the second fluorescent powder are excited by the LED light to respectively generate a first excitation light and a second excitation light. The first optical bandpass filter layer allows the LED light and the first excitation light to pass and reflects the second excitation light. A wavelength of the LED light is shorter than a wavelength of the second excitation light. The wavelength of the second excitation light is shorter than a wavelength of the first excitation light. Therefore, the multi-stack package LED improves a light emission efficiency.

摘要翻译： 多层封装发光二极管（LED）包括LED芯片，第一荧光粉末层，第一光学带通滤光层和第二荧光粉层。 LED芯片产生LED灯。 第一荧光粉层和第二荧光粉层分别具有第一荧光粉和第二荧光粉。 第一荧光粉和第二荧光粉由LED光激发，分别产生第一激发光和第二激发光。 第一光学带通滤波器层允许LED光和第一激发光通过并反射第二激发光。 LED光的波长比第二激发光的波长短。 第二激发光的波长比第一激发光的波长短。 因此，多层封装LED提高了发光效率。

公开(公告)号：US08716737B2

公开(公告)日：2014-05-06

申请号：US13530396

申请日：2012-06-22

申请人： Hsiu Jen Lin ,  Jian Shian Lin ,  Shau Yi Chen ,  Chieh Lung Lai

发明人： Hsiu Jen Lin ,  Jian Shian Lin ,  Shau Yi Chen ,  Chieh Lung Lai

IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L23/532 ,  H01L23/00 ,  H01L33/30 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62

CPC分类号： H01L23/53247 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/30 ,  H01L33/40 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/83193 ,  H01L2224/83207 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15724 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01083 ,  H01L2924/00014

摘要： An LED includes a first intermetallic layer, a first metal thin film layer, an LED chip, a substrate, a second metal thin film layer, and a second intermetallic layer. The first metal thin film layer is located on the first intermetallic layer. The LED chip is located on the first metal thin film layer. The second metal thin film layer is located on the substrate. The second intermetallic layer is located on the second metal thin film layer, and the first intermetallic layer is located on the second intermetallic layer. Materials of the first and the second metal thin film layer are selected from a group consisting of Au, Ag, Cu, and Ni. Materials of the intermetallic layers are selected from a group consisting of a Cu—In—Sn intermetallics, an Ni—In—Sn intermetallics, an Ni—Bi intermetallics, an Au—In intermetallics, an Ag—In intermetallics, an Ag—Sn intermetallics, and an Au—Bi intermetallics.

摘要翻译： LED包括第一金属间层，第一金属薄膜层，LED芯片，基板，第二金属薄膜层和第二金属间层。 第一金属薄膜层位于第一金属间层上。 LED芯片位于第一金属薄膜层上。 第二金属薄膜层位于基板上。 第二金属间化合物层位于第二金属薄膜层上，第一金属间化合物层位于第二金属间层上。 第一和第二金属薄膜层的材料选自由Au，Ag，Cu和Ni组成的组。 金属间层的材料选自Cu-In-Sn金属间化合物，Ni-In-Sn金属间化合物，Ni-Bi金属间化合物，Au-In金属间化合物，Ag-In金属间化合物，Ag-Sn 金属间化合物和Au-Bi金属间化合物。

公开(公告)号：US5976636A

公开(公告)日：1999-11-02

申请号：US45103

申请日：1998-03-19

申请人： Ming-Sheng Leu ,  Wei-Cheng Lih ,  Yuh-Wen Lee ,  Shau-Yi Chen ,  Wei-Jieh Chang ,  Shinn-Cherng Huang ,  Mau-Shen Liou

发明人： Ming-Sheng Leu ,  Wei-Cheng Lih ,  Yuh-Wen Lee ,  Shau-Yi Chen ,  Wei-Jieh Chang ,  Shinn-Cherng Huang ,  Mau-Shen Liou

IPC分类号： C23C14/32 ,  H05H1/50 ,  C23C14/14 ,  C23C14/00

CPC分类号： C23C14/325 ,  H05H1/50

摘要： An electric arc ion plating apparatus to coat a metal material on an object includes: (a) an vacuum chamber; (b) an electric arc bombardment chamber in the vacuum chamber, comprising an anode, a cathode target, and an arc triggering electrode to generate metal particles when a voltage is applied on the anode and the cathode, and on the arc triggering electrode; and (c) a magnetic coil having a longitudinal axis. The magnetic coil emanates from the electric arc bombardment chamber and encloses at least a part of the electric bombardment chamber. The magnetic coil contains a constant-diameter section enclosing and immediately emanating from the electric arc bombardment chamber to guide the metal particles away from the cathode and toward the object, and a varying-diameter section away from the electric arc bombardment chamber to provide optimum distribution of the metal particles before they reach the object surface. The varying-diameter section can be a diverging section for effectively coating relatively large objects, or a converging section for efficiently coating a relatively small object.

摘要翻译： 用于在物体上涂覆金属材料的电弧离子镀装置包括：（a）真空室; （b）真空室中的电弧轰击室，当在阳极和阴极上施加电压时，包括阳极，阴极靶和电弧触发电极以产生金属颗粒;以及电弧触发电极; 和（c）具有纵向轴线的电磁线圈。 电磁线圈从电弧轰击室发出并且包围电轰击室的至少一部分。 磁性线圈包含恒定直径部分，其包围并立即从电弧轰击室发出，以引导金属颗粒远离阴极并朝向物体，以及远离电弧轰击室的变化直径部分以提供最佳分布 的金属颗粒在它们到达物体表面之前。 变径部分可以是用于有效地涂覆较大物体的发散部分或用于有效地涂覆较小物体的会聚部分。