公开(公告)号：US10087093B2

公开(公告)日：2018-10-02

申请号：US14730498

申请日：2015-06-04

Applicant: Toshiyuki Mutoh ,  Shogo Suzuki ,  Yuu Zama ,  Aya Utsuki ,  Kimio Aoki ,  Hideyuki Miyazawa ,  Makito Nakashima ,  Kenichi Hayakawa ,  Shigeru Yamada

Inventor： Toshiyuki Mutoh ,  Shogo Suzuki ,  Yuu Zama ,  Aya Utsuki ,  Kimio Aoki ,  Hideyuki Miyazawa ,  Makito Nakashima ,  Kenichi Hayakawa ,  Shigeru Yamada

IPC: B01J19/00 ,  B01J19/26 ,  C02F1/44 ,  C02F1/72 ,  C02F11/06 ,  C02F101/36 ,  C02F1/02 ,  C02F101/30

Abstract: A fluid treatment apparatus for treating a target fluid is provided. The fluid treatment apparatus includes a cylindrical reactor and one or more catalyst members each having a rod-like or plate-like shape extending in a longitudinal direction within the reactor. The cylindrical reactor decomposes an organic substance contained in a mixed fluid of the target fluid with an oxidant by an oxidation reaction under heat and pressure. The cylindrical reactor has an introduction port on one end and a discharge port on the other end. An upstream end surface, relative to a direction of flow of the target fluid, of each of the catalyst members is located in a downstream vicinity of or upstream from an inflow position where the target fluid flows into the reactor through the introduction port. Each of the catalyst members is suspended with the upstream end surface being fixed.

公开(公告)号：US20140151277A1

公开(公告)日：2014-06-05

申请号：US14095087

申请日：2013-12-03

Applicant: Kimio Aoki ,  Shogo SUZUKI ,  Toshiyuki MUTOH ,  Hideyuki MIYAZAWA ,  Makito NAKASHIMA ,  Aya UTSUKI ,  Kenichi HAYAKAWA ,  Yu ZAMA ,  Shigeru YAMADA

Inventor： Kimio Aoki ,  Shogo SUZUKI ,  Toshiyuki MUTOH ,  Hideyuki MIYAZAWA ,  Makito NAKASHIMA ,  Aya UTSUKI ,  Kenichi HAYAKAWA ,  Yu ZAMA ,  Shigeru YAMADA

IPC: C02F1/72

CPC classification number: C02F1/72 ,  B01J3/008 ,  B01J19/2485 ,  B01J2219/00006 ,  B01J2219/00159 ,  B09B3/0083 ,  C02F1/025 ,  C02F1/20 ,  C02F1/444 ,  C02F1/725 ,  C02F1/727 ,  C02F1/74 ,  C02F1/78 ,  C02F11/08 ,  C02F11/086 ,  C02F2101/16 ,  C02F2101/30 ,  C02F2103/28 ,  C02F2103/36 ,  C02F2201/003 ,  C02F2209/001 ,  C02F2209/003 ,  C02F2209/006 ,  C02F2209/02 ,  C02F2209/03 ,  C02F2209/05 ,  C02F2209/08 ,  C02F2209/11 ,  C02F2209/20 ,  C02F2209/225 ,  C02F2209/235 ,  C02F2209/40 ,  C02F2301/066 ,  C02F2303/10 ,  C02F2303/26 ,  Y02W10/30 ,  Y02W30/78

Abstract: A fluid purification system includes a reaction tank which purifies a purification target fluid by decomposing an organic substance in a purification target fluid with an oxidation reaction while heating and pressurizing a mixed fluid of the purification target fluid and an oxidant; a crusher which crushes an organic solid waste so as to obtain an organic crushed product; and a mixer which mixes the organic crushed product and liquid so as to obtain high concentration organic slurry.

Abstract translation: 流体净化系统包括：反应罐，其通过在对净化对象流体和氧化剂的混合流体进行加热和加压的同时通过分解具有氧化反应的净化对象流体中的有机物质来净化净化对象流体; 粉碎有机固体废物以获得有机粉碎产品的破碎机; 以及将有机粉碎产物和液体混合以获得高浓度有机浆料的混合器。

公开(公告)号：US08115317B2

公开(公告)日：2012-02-14

申请号：US12474400

申请日：2009-05-29

Applicant: Shigeru Yamada ,  Yutaka Kadogawa

Inventor： Shigeru Yamada ,  Yutaka Kadogawa

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2924/13091 ,  H01L2924/00

Abstract: To improve connection reliability of a through electrode in a semiconductor device, and prevent deterioration of electrical characteristics due to a residue generated from a pad at the time of forming the through electrode. A contact area between a pad and a conductor layer is equal to a diameter of a hole of an opening provided in a silicon substrate. Consequently, it is possible to increase the contact area as compared with a conventional configuration. This improves the connection reliability. Furthermore, a residue containing metal is attached to the outside of an insulation film in the manufacturing process. Consequently, the residue is prevented from contacting a silicon substrate body. Also, heavy metals, such as Cu, in the residue are prevented from being diffused into the silicon substrate body. Therefore, it is possible to prevent the deterioration of electrical characteristics.

Abstract translation: 为了提高半导体装置中的贯通电极的连接可靠性，并且防止在形成贯通电极时由焊盘产生的残留物导致的电特性劣化。 焊盘和导体层之间的接触面积等于设置在硅衬底中的开口的孔的直径。 因此，与传统的结构相比，可以增加接触面积。 这提高了连接的可靠性。 此外，在制造过程中，将含残渣的金属附着在绝缘膜的外侧。 因此，防止残留物与硅衬底本体接触。 而且，残留物中的Cu等重金属也被阻止扩散到硅基体内。 因此，可以防止电气特性的劣化。

公开(公告)号：US20100197079A1

公开(公告)日：2010-08-05

申请号：US12759919

申请日：2010-04-14

Applicant: Shinji Ohuchi ,  Shigeru Yamada ,  Yasushi Shiraishi

Inventor： Shinji Ohuchi ,  Shigeru Yamada ,  Yasushi Shiraishi

IPC: H01L21/78 ,  H01L21/60

CPC classification number: H01L24/81 ,  H01L23/13 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/6834 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/05599

Abstract: A method of manufacturing a semiconductor device and a semiconductor device including a first semiconductor element mounted on a first surface of a base plate, wherein solder balls are formed on a second opposite surface of the base plate-such that the second opposite surface includes an area without solder balls. At least one second semiconductor element is mounted to the base plate at the area of the second surface without solder balls. The at least one semiconductor element may be mounted to the base plate using low molecular adhesive, or in the alternative, high temperature solder.

Abstract translation: 一种制造半导体器件和半导体器件的方法，包括安装在基板的第一表面上的第一半导体元件，其中焊球形成在基板的第二相对表面上，使得第二相对表面包括区域 没有焊球。 至少一个第二半导体元件在没有焊球的第二表面的区域处安装到基板。 可以使用低分子粘合剂或替代的高温焊料将至少一个半导体元件安装到基板。

公开(公告)号：US07723832B2

公开(公告)日：2010-05-25

申请号：US10657139

申请日：2003-09-09

Applicant: Shinji Ohuchi ,  Shigeru Yamada ,  Yasushi Shiraishi

Inventor： Shinji Ohuchi ,  Shigeru Yamada ,  Yasushi Shiraishi

IPC: H01L23/02

CPC classification number: H01L24/81 ,  H01L23/13 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/6834 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/05599

Abstract: A method of manufacturing a semiconductor device and a semiconductor device including a first semiconductor element mounted on a first surface of a base plate, wherein solder balls are formed on a second opposite surface of the base plate—such that the second opposite surface includes an area without solder balls. At least one second semiconductor element is mounted to the base plate at the area of the second surface without solder balls. The at least one semiconductor element may be mounted to the base plate using low molecular adhesive, or in the alternative, high temperature solder.

Abstract translation: 一种制造半导体器件和半导体器件的方法，包括安装在基板的第一表面上的第一半导体元件，其中焊球形成在基板的第二相对表面上，使得第二相对表面包括区域 没有焊球。 至少一个第二半导体元件在没有焊球的第二表面的区域处安装到基板。 可以使用低分子粘合剂或替代的高温焊料将至少一个半导体元件安装到基板。

公开(公告)号：US20090133999A1

公开(公告)日：2009-05-28

申请号：US12232836

申请日：2008-09-25

Applicant: Shigeru Yamada ,  Yasushi Takagi

Inventor： Shigeru Yamada ,  Yasushi Takagi

IPC: H01H13/14 ,  H01H13/70

CPC classification number: H01H3/125 ,  H01H13/06 ,  H01H2215/006 ,  H01H2239/034

Abstract: A key switch arrangement is able to prevent liquid such as water from entering a membrane sheet and staying therein. The key switch arrangement includes a waterproof sheet arranged above the membrane sheet, a first fixing member arranged in above the waterproof sheet and having a first projection protruding on the side of the waterproof sheet, and a second fixing member arranged below the membrane sheet and having a second projection protruding on the side of the membrane sheet. In the waterproof sheet and the second projection, holes are formed to which the first projection enters, while in the membrane sheet, a hole is formed to which the second projection enters so as to adhere the waterproof sheet closely to the second projection.

Abstract translation: 钥匙开关装置能够防止诸如水的液体进入膜片并停留在其中。 钥匙开关装置包括布置在隔膜片上方的防水片，布置在防水片上方的第一固定件，并且具有在防水片的侧面上突出的第一突起，以及布置在膜片下方的第二固定件， 在膜片侧突出的第二突起。 在防水片和第二突起中，形成有第一突起进入的孔，而在膜片中，形成有第二突起进入的孔，以将防水片紧贴第二突起。

公开(公告)号：US07427810B2

公开(公告)日：2008-09-23

申请号：US11077152

申请日：2005-03-11

Applicant: Shinji Ohuchi ,  Shigeru Yamada ,  Yasushi Shiraishi

Inventor： Shinji Ohuchi ,  Shigeru Yamada ,  Yasushi Shiraishi

IPC: H01L23/48

CPC classification number: H01L24/81 ,  H01L23/13 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/6834 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/05599

Abstract: A semiconductor device including a first semiconductor element mounted on a first surface of second semiconductor element, wherein solder balls are formed on the first surface of the second semiconductor element such that the first surface includes an area without solder balls. At least one first semiconductor element is mounted to the second semiconductor element at the area of the first surface without solder balls. The at least one first semiconductor element may be mounted to the second semiconductor element using solder joints.

Abstract translation: 一种半导体器件，包括安装在第二半导体元件的第一表面上的第一半导体元件，其中焊球形成在第二半导体元件的第一表面上，使得第一表面包括没有焊球的区域。 至少一个第一半导体元件在第一表面的区域处安装到第二半导体元件而没有焊球。 可以使用焊接接头将至少一个第一半导体元件安装到第二半导体元件。

公开(公告)号：US20080126289A1

公开(公告)日：2008-05-29

申请号：US11895824

申请日：2007-08-28

Applicant: Akihiko Obata ,  Shigeru Yamada ,  Hiroaki Harada

Inventor： Akihiko Obata ,  Shigeru Yamada ,  Hiroaki Harada

IPC: G06N5/02

CPC classification number: G06N5/022 ,  G06N5/043

Abstract: An apparatus registers a participant instance with an incentive inputted by a member “a” (a participant), a searcher instance as supplement to the participant instance inputted by a member “b” (a searcher), and an approval incentive added by a member “c” (an approver) in an instance database 11. Then, when a solver “d” who viewed the participant instance and proposed a solution requests display of incentive allocation, the apparatus sums up the incentive for the participant instance from the instance database 11 and the approval incentive to calculate incentive allocation between the searcher of the associated searcher instance and the solver based on a pre-determined rate. The apparatus further weights, using pre-determined rate, on the allocation to the searcher of searcher instance referenced by others. The apparatus displays the calculated incentive allocation on a terminal 2d of the solver “d”.

Abstract translation: 设备用参与者（参与者）输入的激励登记参与者实体，作为由成员“b”（搜索者）输入的参与者实体的补充的搜索者实例以及由成员添加的批准激励 实例数据库中的“c”（批准者）11。 然后，当查看参与者实例并提出解决方案的求解者“d”请求显示激励分配时，该装置从实例数据库11中总结参与者实体的激励，并且通过审批激励来计算搜索者之间的激励分配 相关联的搜索器实例和基于预定速率的求解器。 该装置进一步使用预定速率对由其他人引用的搜索者实例的搜索者的分配进行加权。 该装置在求解器“d”的终端2d上显示计算的激励分配。

公开(公告)号：US20070295363A1

公开(公告)日：2007-12-27

申请号：US11573787

申请日：2005-08-12

Applicant: Akihiro Fuchigami ,  Toshiyuki Mutoh ,  Yoichi Okamoto ,  Shigeru Yamada ,  Tomoyasu Hirasawa

Inventor： Akihiro Fuchigami ,  Toshiyuki Mutoh ,  Yoichi Okamoto ,  Shigeru Yamada ,  Tomoyasu Hirasawa

IPC: B08B9/08 ,  B08B9/20 ,  B65D83/06

CPC classification number: G03G15/0894 ,  B08B9/08

Abstract: A cleaning method for cleaning a powder container by introducing a cleaning medium into the powder container from a first opening part of the powder container for attaching powder in the powder container to the cleaning medium and discharging the cleaning medium together with the powder from a second opening part situated opposite from the first opening part is disclosed. The method includes a step of releasing the cleaning medium from a position higher than the first opening part of the powder container.

Abstract translation: 一种清洁方法，用于通过从粉末容器的第一开口部分将清洁介质引入粉末容器中，用于将粉末容器中的粉末附着到清洁介质上并将清洁介质与粉末一起从第二开口排出 公开了与第一开口部分相对的部分。 该方法包括从高于粉末容器的第一开口部分的位置释放清洁介质的步骤。

公开(公告)号：US20070273020A1

公开(公告)日：2007-11-29

申请号：US11711104

申请日：2007-02-27

Applicant: Shigeru Yamada

Inventor： Shigeru Yamada

IPC: H01L23/31

CPC classification number: H01L24/12 ,  H01L21/56 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/94 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05569 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2224/274 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014

Abstract: The present invention provides a method of manufacturing semiconductor device. The method includes providing a semiconductor wafer having a main surface; defining a chip forming region which includes chip regions defined by scribe lines, and a peripheral region which surrounds the chip forming region, on the main surface; forming circuit elements and electrode pads connected to the circuit elements on the chip areas; forming an insulating film, which exposes respective portions of the electrode pads, on the main surface; forming protruded electrodes on the insulating film provided in the chip areas so that the protruded electrodes are arranged at predetermined intervals in the chip area; forming an encapsulating material, which exposes top faces of the protruded electrodes, on the insulating film; and cutting the semiconductor wafer along the scribe lines.

Abstract translation: 本发明提供半导体器件的制造方法。 该方法包括提供具有主表面的半导体晶片; 限定芯片形成区域，其包括由划线限定的芯片区域和在主表面上包围芯片形成区域的周边区域; 形成电路元件和连接到芯片区域上的电路元件的电极焊盘; 形成在主表面露出电极焊盘的各部分的绝缘膜; 在设置在芯片区域中的绝缘膜上形成突出电极，使得突出电极以预定的间隔布置在芯片区域中; 形成在所述绝缘膜上露出所述突出电极的顶面的封装材料; 并沿切割线切割半导体晶片。