公开(公告)号：US20120171365A1

公开(公告)日：2012-07-05

申请号：US13395683

申请日：2010-08-27

申请人： Shuji Azumo ,  Yasuhiko Kojima

发明人： Shuji Azumo ,  Yasuhiko Kojima

IPC分类号： B05D5/12 ,  C23C16/52 ,  C23C16/46

CPC分类号： C23C16/45561 ,  C23C16/16 ,  C23C16/52 ,  H01L21/28556

摘要： The film forming apparatus includes a chamber 1; a heater 5 for heating a wafer W within the chamber 1; a film forming source vessel 31, provided outside the chamber 1, for accommodating cobalt carbonyl as a film forming source; a line 43 for transporting gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1; an exhaust device 23 for depressurizing and exhausting an inside of the chamber 1; a cobalt carbonyl supply unit 38 for supplying the gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1 via the line 43; a temperature controller 60 for controlling temperatures of the film forming source vessel 31 and the line 43 to be below a decomposition starting temperature of the cobalt carbonyl; and a CO gas supply unit 37 for supplying a CO gas into the film forming source vessel 31.

摘要翻译： 成膜装置包括：室1; 用于加热室1内的晶片W的加热器5; 成膜源容器31，设置在室1的外部，用于容纳羰基钴作为成膜源; 用于将气态钴羰基从成膜源容器31输送到腔室1的管线43; 用于对室1内部进行减压排气的排气装置23; 用于经由管线43将气态钴羰基从成膜源容器31供应到室1的羰基钴供应单元38; 温度控制器60，其用于控制​​成膜源容器31和管线43的温度低于羰基钴的分解开始温度; 以及用于将CO气体供给到成膜源容器31中的CO气体供给单元37。

公开(公告)号：US08785311B2

公开(公告)日：2014-07-22

申请号：US13227689

申请日：2011-09-08

申请人： Hidenori Miyoshi ,  Shuji Azumo

发明人： Hidenori Miyoshi ,  Shuji Azumo

IPC分类号： H01L21/283 ,  H01L21/30

CPC分类号： H01L21/02271 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02348 ,  H01L21/28026 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/32051 ,  H01L21/445 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76874 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/51 ,  H01L51/0055 ,  H01L51/0094 ,  H01L51/0537

摘要： In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.

摘要翻译： 在形成具有形成在具有膜或衬底形状的半导体材料层上的用作栅极绝缘膜的氧化膜的MOS（金属氧化物半导体）结构的层叠衬底的方法中， 以及形成在氧化膜上的作为栅电极的导电膜，通过在暴露了半导体材料层的基板的表面上涂布聚硅烷溶液，形成半导体材料层上的聚硅烷膜。 通过在其上涂覆金属盐溶液，在聚硅烷膜上形成含有金属离子的膜，并将聚硅烷膜和含有金属离子的膜分别改性为聚硅氧烷膜和含有金属微粒的膜以形成层叠的基板。

公开(公告)号：US20120220121A1

公开(公告)日：2012-08-30

申请号：US13402385

申请日：2012-02-22

申请人： Shuji AZUMO ,  Yasuhiko Kojima

发明人： Shuji AZUMO ,  Yasuhiko Kojima

IPC分类号： H01L21/768

CPC分类号： H01L21/28556 ,  C23C16/16 ,  C23C16/4488 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co4(CO)12 as a single film forming material is supplied into the processing chamber. Then, the gaseous Co4(CO)12 is thermally decomposed on the substrate to form the Co film on the substrate.

摘要翻译： 在设置在处理室中的基板上形成Co膜的成膜方法中，将作为单一成膜材料的气态Co 4（CO）12供给到处理室。 然后，气体Co4（CO）12在基板上热分解，在基板上形成Co膜。

公开(公告)号：US20120064708A1

公开(公告)日：2012-03-15

申请号：US13227689

申请日：2011-09-08

申请人： Hidenori MIYOSHI ,  Shuji Azumo

发明人： Hidenori MIYOSHI ,  Shuji Azumo

IPC分类号： H01L21/283 ,  H01L21/306 ,  B05C11/00

CPC分类号： H01L21/02271 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02348 ,  H01L21/28026 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/32051 ,  H01L21/445 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76874 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/51 ,  H01L51/0055 ,  H01L51/0094 ,  H01L51/0537

摘要： In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.

摘要翻译： 在形成具有形成在具有膜或衬底形状的半导体材料层上的用作栅极绝缘膜的氧化膜的MOS（金属氧化物半导体）结构的层叠衬底的方法中， 以及形成在氧化膜上的作为栅电极的导电膜，通过在暴露了半导体材料层的基板的表面上涂布聚硅烷溶液，形成半导体材料层上的聚硅烷膜。 通过在其上涂覆金属盐溶液，在聚硅烷膜上形成含有金属离子的膜，并将聚硅烷膜和含有金属离子的膜分别改性为聚硅氧烷膜和含有金属微粒的膜以形成层叠的基板。

公开(公告)号：US08900991B2

公开(公告)日：2014-12-02

申请号：US13402385

申请日：2012-02-22

申请人： Shuji Azumo ,  Yasuhiko Kojima

发明人： Shuji Azumo ,  Yasuhiko Kojima

IPC分类号： H01L21/768 ,  C23C16/16 ,  C23C16/448 ,  H01L23/532 ,  H01L21/285

CPC分类号： H01L21/28556 ,  C23C16/16 ,  C23C16/4488 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co4(CO)12 as a single film forming material is supplied into the processing chamber. Then, the gaseous Co4(CO)12 is thermally decomposed on the substrate to form the Co film on the substrate.

摘要翻译： 在设置在处理室中的基板上形成Co膜的成膜方法中，将作为单一成膜材料的气态Co 4（CO）12供给到处理室。 然后，气体Co4（CO）12在基板上热分解，在基板上形成Co膜。

公开(公告)号：US20120211890A1

公开(公告)日：2012-08-23

申请号：US13364722

申请日：2012-02-02

申请人： Shuji AZUMO ,  Yasuhiko KOJIMA

发明人： Shuji AZUMO ,  Yasuhiko KOJIMA

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  C23C16/14 ,  C23C16/16 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76858 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal thin film forming method includes depositing a Ti film on an insulating film formed on a substrate and depositing a Co film on the Ti film. The film forming method further includes modifying a laminated film of the Ti film and the Co film on the insulating film to a metal thin film containing Co3Ti alloy by heating the laminated film in an inert gas atmosphere or a reduction gas atmosphere.

摘要翻译： 金属薄膜形成方法包括在形成在基板上的绝缘膜上沉积Ti膜并在Ti膜上沉积Co膜。 成膜方法还包括通过在惰性气体气氛或还原气体气氛中加热层叠膜，将绝缘膜上的Ti膜和Co膜的层压膜改性为含有Co 3 Ti合金的金属薄膜。

公开(公告)号：US20120164328A1

公开(公告)日：2012-06-28

申请号：US13054361

申请日：2010-08-26

申请人： Yasuhiko Kojima ,  Shuji Azumo

发明人： Yasuhiko Kojima ,  Shuji Azumo

IPC分类号： C23C16/44 ,  B05D1/36 ,  C25D5/00

CPC分类号： C23C16/18 ,  C23C16/45525 ,  C23C16/52 ,  C23C16/56 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/166 ,  C23C18/1678 ,  C23C18/1696 ,  C23C18/34 ,  C23C28/023 ,  H01L21/28562 ,  H01L21/76843

摘要： A substrate is transferred to a processing container, and a film formation raw material containing cobalt amidinate and a reducing agent containing a carbonic acid in a vapor phase are introduced into the processing container, thereby a Co film is formed on the substrate.

摘要翻译： 将基板转移到处理容器中，将含有脒基的成膜原料和含有气相的碳酸的还原剂引入处理容器中，从而在基板上形成Co膜。

公开(公告)号：US20110174630A1

公开(公告)日：2011-07-21

申请号：US13054331

申请日：2010-08-27

申请人： Yasuhiko Kojima ,  Shuji Azumo

发明人： Yasuhiko Kojima ,  Shuji Azumo

IPC分类号： C23C28/02

CPC分类号： C25D7/123 ,  C25D3/38 ,  C25D5/34 ,  C25D17/001 ,  H01L21/28556 ,  H01L21/2885 ,  H01L21/76873

摘要： A film formation method includes preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.

摘要翻译： 成膜方法包括在基板的表面上准备形成Co膜作为种子层的基板，向基板施加负电压使得Co的表面电位低于Co的氧化电位，并且在 当将负电压施加到基板上时，将Co膜浸入主要含有硫酸铜溶液的镀液中，由此通过电镀在基板的Co膜上形成Cu膜。