公开(公告)号：US20120017703A1

公开(公告)日：2012-01-26

申请号：US13190889

申请日：2011-07-26

Applicant: Tomo IKEBE ,  Sumio UTSUNOMIYA

Inventor： Tomo IKEBE ,  Sumio UTSUNOMIYA

IPC: G01L1/00

CPC classification number: G01L5/165 ,  B25J13/083 ,  G01L5/226 ,  G06F3/0202 ,  G06F3/0338 ,  G06F3/0414 ,  G06F3/044

Abstract: Disclosed is a detection device for detecting a strength and a direction of an external force applied to a reference point, the detection device including: a first substrate having a plurality of first capacitor electrodes arranged around the reference point; a second substrate arranged to face the first substrate by interposing the first capacitor electrodes; a dielectric body arranged between the first and second substrates and made of an elastic body or fluid; a second capacitor electrode arranged to face the first capacitor electrodes by interposing the dielectric body between the first and second substrates; and a third substrate having an elastic projection which has a gravity center in a location overlapping with the reference point and is elastically deformed by the external force while a tip thereof abuts on the second substrate.

Abstract translation: 本发明公开了一种用于检测施加于基准点的外力的强度和方向的检测装置，所述检测装置包括：第一基板，具有围绕所述基准点布置的多个第一电容器电极; 布置成通过插入第一电容器电极而面对第一基板的第二基板; 布置在所述第一和第二基板之间并由弹性体或流体制成的绝缘体; 第二电容器电极，其通过将电介质体插入在第一和第二基板之间而布置成面对第一电容器电极; 以及具有弹性突起的第三基板，所述弹性突起具有与所述基准点重叠的位置的重心，并且在其前端邻接所述第二基板时由外力弹性变形。

公开(公告)号：US08034175B2

公开(公告)日：2011-10-11

申请号：US11389079

申请日：2006-03-27

Applicant: Sumio Utsunomiya ,  Mitsuru Sato

Inventor： Sumio Utsunomiya ,  Mitsuru Sato

IPC: C23C16/00

CPC classification number: H01L21/02667 ,  F27B17/0025 ,  H01L21/2022 ,  H01L21/67103 ,  H01L27/1214 ,  H01L29/66757

Abstract: A method for manufacturing a semiconductor device, comprises providing a semiconductor layer deposited on a substrate with heat treatment by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas as a heat source.

Abstract translation: 一种制造半导体器件的方法，包括通过使用由氢氧混合气体燃烧的气体燃烧器的火焰作为热源，将沉积在基板上的半导体层提供热处理。

公开(公告)号：US07948179B2

公开(公告)日：2011-05-24

申请号：US12773262

申请日：2010-05-04

Applicant: Takeshi Koshihara ,  Sumio Utsunomiya ,  Takeyoshi Ushiki ,  Yoichi Fujikawa

Inventor： Takeshi Koshihara ,  Sumio Utsunomiya ,  Takeyoshi Ushiki ,  Yoichi Fujikawa

IPC: H01J1/62

CPC classification number: G06F3/044 ,  H01L27/323 ,  H01L27/3244

Abstract: The invention provides an organic electroluminescence device having an input function, including: an element substrate that has a light-emitting layer sandwiched between a pair of electrodes; a sealing substrate that seals the element substrate; a first detection electrode that is provided at the inner-surface side of the sealing substrate; a second detection electrode that is provided at the outer-surface side of the sealing substrate; the second detection electrode having a detection axis that is not the same as that of the first detection electrode; a dielectric film that is formed on the second detection electrode; and a detection unit that detects a position at which electrostatic capacitance is generated via the dielectric film between the first detection electrode and the second detection electrode.

Abstract translation: 本发明提供一种具有输入功能的有机电致发光器件，包括：元件衬底，其具有夹在一对电极之间的发光层; 密封基板，密封元件基板; 第一检测电极，设置在密封基板的内表面侧; 设置在密封基板的外表面侧的第二检测电极; 所述第二检测电极具有与所述第一检测电极不同的检测轴; 形成在所述第二检测电极上的电介质膜; 以及检测单元，其经由第一检测电极和第二检测电极之间的电介质膜检测产生静电电容的位置。

公开(公告)号：US07666726B2

公开(公告)日：2010-02-23

申请号：US11690461

申请日：2007-03-23

Applicant: Sumio Utsunomiya ,  Hideto Ishiguro

Inventor： Sumio Utsunomiya ,  Hideto Ishiguro

IPC: H01L21/84

CPC classification number: H01L21/02675 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78675

Abstract: A method of manufacturing a semiconductor element includes: (a) preparing a first substrate provided with a plurality of protruding sections formed on a surface of the first substrate and a second substrate provided with a semiconductor film formed on a surface of the second substrate; and (b) executing a heat treatment on the semiconductor film while the plurality of protruding sections and the semiconductor film are in contact with each other.

Abstract translation: 制造半导体元件的方法包括：（a）制备设置有形成在第一基板的表面上的多个突出部分的第一基板和设置有形成在第二基板的表面上的半导体膜的第二基板; 和（b）在所述多个突出部和所述半导体膜彼此接触的同时对所述半导体膜进行热处理。

公开(公告)号：US20080180584A1

公开(公告)日：2008-07-31

申请号：US11956385

申请日：2007-12-14

Applicant: Sumio UTSUNOMIYA ,  Takeshi KOSHIHARA ,  Takeyoshi USHIKI ,  Yoichi FUJIKAWA

Inventor： Sumio UTSUNOMIYA ,  Takeshi KOSHIHARA ,  Takeyoshi USHIKI ,  Yoichi FUJIKAWA

IPC: G06F3/044

CPC classification number: G06F3/044

Abstract: An input-capable display device includes a first substrate a second substrate, a detection electrode, a dielectric film, and a detector. A pair of electrodes that drive a liquid crystal layer are provided on the first substrate. The second substrate is opposed to the first substrate through the liquid crystal layer. The detection electrode and the dielectric film are laminated on an outer surface of the second substrate. The detector detects a position at which an electrostatic capacitance is formed with the detection electrode through the dielectric film. The second substrate includes a shield conductor that is provided on a side adjacent to the liquid crystal layer. An electric potential of the shield conductor is fixed. The shield conductor has a plurality of birefringent structures that are arranged in a stripe.

Abstract translation: 具有输入能力的显示装置包括第一基板，第二基板，检测电极，电介质膜和检测器。 驱动液晶层的一对电极设置在第一基板上。 第二基板通过液晶层与第一基板相对。 检测电极和电介质膜层叠在第二基板的外表面上。 检测器通过电介质膜检测与检测电极形成静电电容的位置。 第二基板包括设置在与液晶层相邻的一侧的屏蔽导体。 屏蔽导体的电位是固定的。 屏蔽导体具有布置成条纹的多个双折射结构。

公开(公告)号：US07342354B2

公开(公告)日：2008-03-11

申请号：US10850423

申请日：2004-05-21

Applicant: Sumio Utsunomiya ,  Tomoyuki Kamakura

Inventor： Sumio Utsunomiya ,  Tomoyuki Kamakura

IPC: H05B33/00

CPC classification number: H01L27/1266 ,  H01L27/1214 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/5253 ,  H01L51/56

Abstract: To provide a sheet-shaped organic EL display device having a reduced thickness, an organic EL display device includes a substrate serving as both a protective layer to reduce or prevent permeation of moisture, oxygen, and the like into the inside and a support layer for film formation, a laminate which is provided on a under layer by film formation and which includes a thin film circuit layer carrying an electric circuit and an organic EL light emitting layer carrying an organic EL light emitting element, and an adhesive layer joining the above-described laminate and the above-described substrate. The above-described organic EL light emitting element radiates the emitted light toward the above-described under layer side. In this manner, a low-profile organic EL display device can be provided.

Abstract translation: 为了提供具有减小的厚度的片状有机EL显示装置，有机EL显示装置包括用作保护层以减少或防止水分，氧等渗透到内部的保护层的基板和用于 膜形成层叠体，其通过成膜形成在下层上，并且包括承载电路的薄膜电路层和携带有机EL发光元件的有机EL发光层，以及粘合上述层叠体的粘合剂层， 和上述基板。 上述有机EL发光元件朝向上述下层侧发射发光。 以这种方式，可以提供低调的有机EL显示装置。

公开(公告)号：US20050280041A1

公开(公告)日：2005-12-22

申请号：US11205169

申请日：2005-08-17

Applicant: Takashi Hashimoto ,  Atsushi Takakuwa ,  Tomoyuki Kamakura ,  Sumio Utsunomiya

Inventor： Takashi Hashimoto ,  Atsushi Takakuwa ,  Tomoyuki Kamakura ,  Sumio Utsunomiya

IPC: G02F1/1368 ,  H01L21/02 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/108 ,  H01L27/12 ,  H01L27/13 ,  H01L29/745 ,  H01L29/786

CPC classification number: H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/13 ,  H01L29/78603 ,  H01L2221/68322 ,  H01L2221/68363 ,  H01L2221/68381

Abstract: A device manufacturing method, including: a first process for providing the plural elements on the original substrate via a separation layer in a condition where terminal sections are exposed to a surface on an opposite side to the separation layer; a second process for adhering the surface where the terminal sections of the elements to be transferred on the original substrate are exposed, via conductive adhesive, to a surface of the final substrate on a side where conductive sections for conducting with the terminal sections of the elements are provided; a third process for producing exfoliation in the separation layer between the original substrate and the final substrate; and a fourth process for separating the original substrate from which the transfer of elements has been completed, from the final substrate.

Abstract translation: 一种器件制造方法，包括：第一工序，其在端子部分暴露于与所述分离层的相对侧的表面的条件下，经由分离层，在所述原始衬底上提供所述多个元件; 用于粘附表面的第二工艺，其中待转印元件的端子部分在原始基板上通过导电粘合剂暴露于最终基板的表面，该导电部分用于与元件的端子部分导通的导电部分 被提供; 用于在原始基板和最终基板之间的分离层中产生剥离的第三种方法; 以及从最终基板分离已经完成元素转移的原始基板的第四工艺。

公开(公告)号：US20050280037A1

公开(公告)日：2005-12-22

申请号：US11196680

申请日：2005-08-04

Applicant: Mutsumi Kimura ,  Sumio Utsunomiya ,  Hiroyuki Hara ,  Wakao Miyazawa

Inventor： Mutsumi Kimura ,  Sumio Utsunomiya ,  Hiroyuki Hara ,  Wakao Miyazawa

IPC: H05B33/06 ,  G09F9/30 ,  H01L21/60 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/32 ,  H01L51/50 ,  H01L27/10

CPC classification number: H01L24/81 ,  H01L24/73 ,  H01L24/75 ,  H01L27/3255 ,  H01L2221/68322 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/75263 ,  H01L2224/7598 ,  H01L2224/81001 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

Abstract: In a semiconductor device made by forming functional elements on a first substrate, transferring the element chip onto a second substrate, and connecting first pads on the element chip to second pads on the second substrate, the area or the width of the first is increased. The first pads can be securely connected to the second pads even when misalignment occurs during the separating and transferring processes. Only the first pads are formed on a surface of the element chip at the second-substrate-side. The functional elements are formed to be farther from the second substrate than the first pads. Alternatively, only the first pads are formed on a surface of the element chip remote from the second substrate, and the functional elements are formed to be closer to the second substrate than the first pads. Alternatively, the first pads are formed on both the surface of the element chip at the second-substrate-side and the surface of the element chip remote from the second substrate.

Abstract translation: 在通过在第一基板上形成功能元件而制造的半导体器件中，将元件芯片转移到第二基板上，并且将元件芯片上的第一焊盘连接到第二基板上的第二焊盘，第一基板的面积或宽度增加。 即使在分离和转移过程中发生不对准，第一焊盘也可以牢固地连接到第二焊盘。 仅在第二基板侧的元件芯片的表面上形成第一焊盘。 功能元件形成为比第一焊盘离第二衬底更远。 或者，只有第一焊盘形成在远离第二衬底的元件芯片的表面上，并且功能元件形成为比第一焊盘更靠近第二衬底。 或者，第一焊盘形成在第二衬底侧的元件芯片的表面和远离第二衬底的元件芯片的表面上。

公开(公告)号：US06887650B2

公开(公告)日：2005-05-03

申请号：US10201268

申请日：2002-07-24

Applicant: Tatsuya Shimoda ,  Sumio Utsunomiya

Inventor： Tatsuya Shimoda ,  Sumio Utsunomiya

IPC: H01L21/336 ,  H01L21/77 ,  H01L21/8242 ,  H01L21/8244 ,  H01L21/8246 ,  H01L21/8247 ,  H01L21/84 ,  H01L27/118 ,  H01L27/13 ,  H01L27/32 ,  H01L51/56 ,  H05K3/04 ,  H01L21/78

CPC classification number: H01L27/1266 ,  B82Y10/00 ,  B82Y30/00 ,  G02F2001/13613 ,  H01L21/6835 ,  H01L21/6836 ,  H01L27/10844 ,  H01L27/11 ,  H01L27/11213 ,  H01L27/11502 ,  H01L27/11517 ,  H01L27/11585 ,  H01L27/1159 ,  H01L27/118 ,  H01L27/1214 ,  H01L27/13 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/66772 ,  H01L51/56 ,  H01L2221/68318 ,  H01L2221/68322 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/95 ,  H01L2225/06562 ,  H05K3/046

Abstract: A transfer method comprising a step of forming a plurality of transferred bodies on a transfer origin substrate, and a step of applying energy to partial regions corresponding to the transferred bodies to be transferred, and transferring these transferred bodies corresponding to the partial regions onto a transfer destination substrate. A plurality of transferred bodies such as devices or circuits that are to be disposed on a transfer destination substrate with spaces therebetween can be manufactured integrated together on a transfer origin substrate, and hence compared with the case that the transferred bodies are formed on the transfer destination substrate directly, the amount of materials used in the manufacture of the transferred bodies can be reduced, the area efficiency can be greatly improved, and a transfer destination substrate on which a large number of devices or circuits are disposed in scattered locations can be manufactured efficiently and cheaply.

Abstract translation: 一种转印方法，包括在转印原色基底上形成多个转印体的步骤，以及将能量转移到与要转印的转印体相对应的部分区域的步骤，将与该部分区域对应的转印体转印到转印体上 目的基片。 要设置在转印目的地基板上的多个转移体，例如设置在转印目的基板上的空间可以在转印原点基底上一体地制造，因此与转印体形成在转印目的地上的情况相比较 基板直接地，可以减少用于制造转印体的材料的量，可以大大提高面积效率，并且可以有效地制造在散布位置上布置有大量器件或电路的转印目的基板 并且便宜。

公开(公告)号：US20050054178A1

公开(公告)日：2005-03-10

申请号：US10936826

申请日：2004-09-09

Applicant: Sumio Utsunomiya

Inventor： Sumio Utsunomiya

IPC: H05B33/10 ,  H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H05B33/04 ,  H01L21/00 ,  H01L27/15 ,  H01L31/12 ,  H01L29/267 ,  H01J63/04 ,  H01J1/62 ,  H01L23/02

CPC classification number: H01L27/1266 ,  H01L21/2007 ,  H01L27/1214 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338

Abstract: A technique enabling a reduction in manufacturing cost of an electric device (for example, an organic EL display device) using a substrate requiring a barrier layer is described. A manufacturing method of the electric device of may include forming a peeling layer on a first substrate, forming a transferred layer that includes an electric element on the peeling layer, forming the barrier layer on the transferred layer, bonding a second substrate to the transferred layer formation on a surface side of the first substrate via an adhesive layer, transferring energy to the peeling layer through the first substrate to cause peeling in the peeling layer, and separation of the first substrate from the second substrate.

Abstract translation: 描述使用需要阻挡层的衬底的电子装置（例如，有机EL显示装置）的制造成本降低的技术。 电气装置的制造方法可以包括在第一基板上形成剥离层，在剥离层上形成包含电子元件的转印层，在转印层上形成阻挡层，将第二基板接合到转印层 经由粘合剂层在第一基板的表面侧形成，通过第一基板将能量转移到剥离层，以使剥离层发生剥离，并将第一基板与第二基板分离。