公开(公告)号：US06711198B1

公开(公告)日：2004-03-23

申请号：US09549552

申请日：2000-04-14

申请人： Jun Ichihara ,  Hisayoshi Kitajima ,  Tetsuhiro Tanabe ,  Ken Nakahara ,  Haruo Tanaka

发明人： Jun Ichihara ,  Hisayoshi Kitajima ,  Tetsuhiro Tanabe ,  Ken Nakahara ,  Haruo Tanaka

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/06216 ,  H01S5/221 ,  H01S5/2219

摘要： A light source device for a laser beam printer in which a semiconductor laser is driven with a pulse current having a minimum pulse width at the ON time on the order of milliseconds or less is provided, wherein the semiconductor laser is formed so that either the rate of change at the rise portion of the pulse current becomes ±8% or less or the semiconductor laser is excited in a multiple mode in the vicinity of the threshold value of the oscillation, and the semiconductor laser oscillates in a single mode at a current separated from the threshold value, by adjusting of at least one of the width w of a stripe groove (7a) of the current block layer, the composition of clad layers (5), the distance d between the current block layer (7) and the active layer (4), the composition of the current block layer (7) and the formation of a light absorption layer into the current block layer (7). As a consequence, in the case where the light source device for the laser beam printer is driven with a short drive pulse on the order of several hundred micro seconds, the light source device becomes such that a transient phenomenon is not generated at the time of the rise of the pulse and a stable light output can be obtained.

摘要翻译： 提供了一种激光束打印机的光源装置，其中半导体激光器以在几毫秒或更小的导通时间具有最小脉冲宽度的脉冲电流驱动，其中半导体激光器形成为使得速率 在脉冲电流的上升部分的变化量为±8％以下，或者半导体激光器在振荡阈值附近的多模式下被激发，半导体激光器以单一模式以分流的方式振荡 从阈值，通过调整当前阻挡层的条纹槽（7a）的宽度w，包层（5）的组成中的至少一个，当前阻挡层（7）和 有源层（4），当前阻挡层（7）的组成和在当前阻挡层（7）中形成光吸收层。 结果，在激光束打印机的光源装置以数百微秒的短驱动脉冲驱动的情况下，光源装置变为使得在不能产生瞬时现象的情况下 可以获得脉冲的上升和稳定的光输出。

公开(公告)号：US06674098B1

公开(公告)日：2004-01-06

申请号：US10031931

申请日：2002-01-25

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L2715

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US07605012B2

公开(公告)日：2009-10-20

申请号：US11166254

申请日：2005-06-27

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US06987029B2

公开(公告)日：2006-01-17

申请号：US10713205

申请日：2003-11-17

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US06735230B1

公开(公告)日：2004-05-11

申请号：US09786337

申请日：2001-03-08

申请人： Tetsuhiro Tanabe ,  Ken Nakahara

发明人： Tetsuhiro Tanabe ,  Ken Nakahara

IPC分类号： H01S319

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01S5/021 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/32308 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： On the surface of a conductive substrate (1) of GaAs, Ge, Si, etc., a semiconductor lamination section including a light emitting layer forming portion (11) that has at least an n-type layer (4) and a p-type layer (6) made from a compound semiconductor of a Group III element and nitrogen and that is laminated so as to form a light emitting layer is formed through a buffer layer (2) suitable for the substrate. As a result, a semiconductor light emitting device using a Group III nitride compound semiconductor, which is of a vertical type that allows electrodes to be taken out from both of the upper and lower surfaces of a chip, has superior crystalline properties with high light emitting efficiency, and exhibits cleavage, is obtained. Therefore, it is possible to easily mount a LD chip on a sub-mount having a good thermal conductivity, and consequently to prevent a reduction and degradation in the light emitting efficiency (differential quantum efficiency) due to heat.

摘要翻译： 在GaAs，Ge，Si等的导电性基板（1）的表面上，具有至少具有n型层（4）和p型层的发光层形成部（11）的半导体层叠部 通过由III族元素的化合物半导体制成的并且层叠以形成发光层的层型（6）通过适合于该基板的缓冲层（2）形成。 结果，使用具有允许电极从芯片的上表面和下表面中取出的电极的垂直型III族氮化物化合物半导体的半导体发光器件具有优异的晶体性质，具有高发光 效率，并显示出裂解。 因此，可以容易地将LD芯片安装在具有良好导热性的子座上，从而防止由于热导致的发光效率（微分量子效率）的降低和劣化。

公开(公告)号：US07132691B1

公开(公告)日：2006-11-07

申请号：US09786338

申请日：1999-09-09

申请人： Tetsuhiro Tanabe ,  Ken Nakahara

发明人： Tetsuhiro Tanabe ,  Ken Nakahara

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/28 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/3214 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/347

摘要： It has a structure in which an active layer (5) that emits light by electric current injection is sandwiched between an n-type cladding layer (4) and a p-type cladding layer (6) made of materials having a larger band gap than the active layer (5), wherein the active layer (5) is made, for example, of CdxZn1−xO (0≦x

摘要翻译： 具有通过电流注入发光的有源层（5）夹在由n型包层（4）和p型包覆层（6）构成的p型包覆层 所述有源层（5），其中所述有源层（5）由例如Cd x 1 x 1-x O（0 <= x <1）制成， 。 进一步优选的是，包覆层（4），（6）由例如Mg Y 1 Y y O（0≤y< 1）。 这使得ZnO材料的带隙变窄，并且可以使用能够被湿蚀刻，易于处理和结晶性优异的氧化物半导体作为半导体发光器件的有源层或包层的材料 例如其中有源层夹在包层之间的蓝色发光二极管或蓝色激光二极管，从而可以获得发光特性优异的蓝色半导体发光器件。

公开(公告)号：US20050247954A1

公开(公告)日：2005-11-10

申请号：US11166254

申请日：2005-06-27

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/28 ,  H01S5/02 ,  H01S5/323 ,  H01S5/327

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US20100218723A1

公开(公告)日：2010-09-02

申请号：US12223426

申请日：2007-01-29

申请人： Takatoshi Yamamoto ,  Shinya Umemoto ,  Tetsuhiro Tanabe ,  Yoshio Nishimoto

发明人： Takatoshi Yamamoto ,  Shinya Umemoto ,  Tetsuhiro Tanabe ,  Yoshio Nishimoto

IPC分类号： C30B23/06 ,  C23C16/00

CPC分类号： C23C14/243 ,  C30B23/066

摘要： A molecular beam cell includes a crucible (2) for containing a material (29), a coil heater (3) for heating the material (29), and a side reflector (5) for reflecting the heat from the coil heater (3). The molecular beam cell further includes a base (7) supporting the crucible (2), the coil heater (3) and the side reflector (5). The base (7) is held by a disc-shaped flange (9) via a plurality of posts (20). A purge gas introduction pipe (44) for supplying purge gas (48) into the crucible (2) is provided, whereby ambient gas (36) is prevented from coming into contact with the material (29).

摘要翻译： 分子束单元包括用于容纳材料的坩埚（2），用于加热材料（29）的线圈加热器（3）和用于反射来自线圈加热器（3）的热量的侧反射器（5） 。 分子束单元还包括支撑坩埚（2）的基座（7），线圈加热器（3）和侧反射器（5）。 基座（7）经由多个柱（20）由盘形凸缘（9）保持。 提供了用于将清洗气体（48）供应到坩埚（2）中的吹扫气体导入管（44），由此防止环境气体（36）与材料（29）接触。

公开(公告)号：US20100264411A1

公开(公告)日：2010-10-21

申请号：US12086882

申请日：2006-12-19

申请人： Tetsuo Fujii ,  Tetsuhiro Tanabe

发明人： Tetsuo Fujii ,  Tetsuhiro Tanabe

IPC分类号： H01L33/36

CPC分类号： H01L33/14 ,  H01L33/28

摘要： There is provided a ZnO based compound semiconductor light emitting device which can emit light with high efficiency and from an entire surface while using ZnO based compound semiconductor which can be expected with higher light emitting efficiency than that of a GaN based compound. On an insulating substrate (1), an n-type layer (2), an active layer (3), and a p-type layer (4), made of ZnO based compound semiconductor materials, are laminated, wherein a specific resistance of the n-type layer is 0.001 Ω·cm or more and 1 Ω·cm or less, and a film thickness (μm) of the n-type layer is set in a value or more calculated by a formula (specific resistance (Ω·cm))×300, and an n-side electrode (5) is formed on an exposed portion of a surface of the n-type layer opposite to a surface being in contact with the substrate and a p-side electrode (6) is formed on the p-type layer.

摘要翻译： 提供了一种ZnO基化合物半导体发光器件，其能够以比GaN基化合物更高的发光效率预期的ZnO基化合物半导体，能够高效率地发光并且从整个表面发光。 在绝缘基板（1）上层叠由ZnO系化合物半导体材料构成的n型层（2），有源层（3）和p型层（4），其中，电阻率 n型层的厚度为0.001＆OHgr·cm以上且1＆OHgr·cm以下，n型层的膜厚（μm）设定为通过公式计算的值（比电阻（ ＆OHgr;·cm））×300，并且n面电极（5）形成在与基板接触的表面相对的n型层的表面的露出部分和p侧电极（ 6）形成在p型层上。

公开(公告)号：US06670204B2

公开(公告)日：2003-12-30

申请号：US10235705

申请日：2002-09-06

申请人： Tetsuhiro Tanabe ,  Masayuki Sonobe

发明人： Tetsuhiro Tanabe ,  Masayuki Sonobe

IPC分类号： H01L2100

CPC分类号： H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

摘要： A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type compound semiconductor layered part (15) is so laminated as to form a light emitting layer. Recessed parts (3b) are formed in the upper face side of the mask layer. In other words, owing to the recessed parts in the upper face side of the mask layer, the second GaN type compound semiconductor layer (4) is grown as to form approximately parallel gap (3c) between the bottom face of the second GaN type compound semiconductor layer and the mask layer. Further, it is preferable for the mask to be formed in a manner that the opening parts for exposing the seeds are not arranged only continuous in one single direction in the entire surface of the wafer type substrate. Consequently, a nitride type compound semiconductor light emitting device can be obtained while being provided with a low dislocation density and excellent light emitting efficiency and especially a semiconductor laser with a lowered threshold current value can be obtained.