公开(公告)号：US06162988A

公开(公告)日：2000-12-19

申请号：US923259

申请日：1997-09-04

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/511 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

公开(公告)号：US6093290A

公开(公告)日：2000-07-25

申请号：US76238

申请日：1998-05-12

申请人： Hideo Tamura ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai

发明人： Hideo Tamura ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai

IPC分类号： C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3455 ,  C23C14/35 ,  C23C14/562 ,  H01J37/3405

摘要： The sputtering method of the present invention comprises the steps of forming a plurality of tunnel-like magnetic fluxes on a target, forming an electric field between the target and a belt-like substrate, and conveying the belt-like substrate while reciprocating the plurality of tunnel-like magnetic fluxes at least in the direction of conveying the belt-like substrate, wherein the speed v of conveying the substrate, the distance L in the direction of conveying the belt-like substrate between two adjacent points where the magnetic field of the plurality of tunnel-like magnetic fluxes and the electric field cross each other at a right angle, and the period T of the reciprocating motion of the plurality of tunnel-like magnetic fluxes are controlled so as to L/v=(n+1/2)T wherein n is z-1/16

摘要翻译： 本发明的溅射方法包括以下步骤：在目标上形成多个隧道状磁通量，在靶和带状基底之间形成电场，并且在传送带状衬底的同时使多个 至少在输送带状基板的方向上的隧道状磁通量，其中传送基板的速度v，在传送带状基板的方向上的距离L，两个相邻点之间的磁场 多个隧道状磁通和电场以直角彼此交叉，并且多个隧道状磁通的往复运动的周期T被控制为L / v =（n ++ E ，1/2 + EE）T，其中n是z- + E，fra 1/16 + EE

公开(公告)号：US5946587A

公开(公告)日：1999-08-31

申请号：US741352

申请日：1996-10-29

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

IPC分类号： C23C14/56 ,  C23C16/54 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/206 ,  C23C14/562 ,  C23C14/568 ,  C23C16/545 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein each of semiconductor layers of desired conduction type is deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is being moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via a gas gate having the structure of introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off the center of the separation chamber of the gas gate.

摘要翻译： 本发明的目的在于提供一种具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间的气体之间的任何相互混合，其中期望的导电类型的每个半导体层沉积在带状 通过等离子体CVD在多个成膜室内的基板，同时带状基板沿着其长度方向连续移动通过多个成膜室，该多个成膜室通过具有引入清除气体的结构的气门连接到 狭缝状分离通道，其特征在于，连接形成半导体结的i型层成膜室和n型或p型层成膜室中的至少一个具有比i型 层成膜室具有设置在n型或p型层上的清除气体导入位置 成膜室一侧离开气门分离室的中心。

公开(公告)号：US5769963A

公开(公告)日：1998-06-23

申请号：US697783

申请日：1996-08-30

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： H01L31/0368 ,  H01L31/075 ,  H01L31/20 ,  H01L31/0352

CPC分类号： H01L31/076 ,  H01L31/03682 ,  H01L31/075 ,  H01L31/206 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device comprises a semiconductor region having at least one set of semiconductor layers comprised of a first semiconductor layer having a first conductivity type, an intrinsic or substantially intrinsic second semiconductor layer, and a third semiconductor layer having a conductivity type opposite to that of the first conductivity type, the layers being formed in this order, and first and second electrodes provided such that the electrodes interpose the semiconductor region; wherein the density of a dopant impurity determining the conductivity type of the first semiconductor layer in a set of semiconductor layers which is in contact with the first electrode is varied so as to be lower on the side of the first electrode, or the grain size of crystals in the first semiconductor layer is varied so as to be smaller on the side of the first electrode. This provides a photovoltaic device that does not exhibit great lowering of characteristics even when short circuits locally occur in the semiconductor layers during long-term service.

摘要翻译： 一种光电器件包括具有至少一组半导体层的半导体区域，该组半导体层由具有第一导电类型的第一半导体层，本征的或基本上本征的第二半导体层组成，以及具有与第 第一导电类型，这些层依次形成，第一和第二电极设置成使得电极插入半导体区域; 其中确定与第一电极接触的一组半导体层中的第一半导体层的导电类型的掺杂剂杂质的密度在第一电极的侧面变化，或者在第一电极的一侧的晶粒尺寸 第一半导体层中的晶体在第一电极侧变化较小。 这提供了即使在长期服务期间在半导体层中局部出现短路的情况下也不会出现特性的降低的光电器件。

公开(公告)号：US5714010A

公开(公告)日：1998-02-03

申请号：US450620

申请日：1995-05-25

申请人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

发明人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L29/872 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3277 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/872 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking up it by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving from said pay-out mechanism toward said take-up mechanism; introducing a film-forming raw material gas through a gas feed means into said film-forming chamber; at the same time, radiating a microwave energy in said film-forming chamber by using a microwave applicator means, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate microwave plasma in said film-forming chamber, whereby continuously forming a deposited film on the inner wall face of said continuously moving circumferential wall to be exposed to said microwave plasma. A microwave plasma CVD apparatus suitable practicing said method.

摘要翻译： 一种用于连续地形成大面积和长度的功能性沉积膜的微波等离子体CVD方法，所述方法包括：通过用放出机构支付并通过卷取机构进行卷取，从而沿纵向方向连续地移动基板 ; 通过弯曲和突出所述移动的基材卷材来形成基本上封闭的成膜室，以在从所述放出机构朝向所述卷取机构移动的路上形成作为所述成膜室的周壁的柱状部分; 将成膜原料气体通过气体供给装置引入所述成膜室中; 同时通过使用微波施加器装置在所述成膜室内辐射微波能量，所述微波施加装置设计成能够沿与微波传播方向平行的方向辐射微波能量，以在所述膜中产生微波等离子体 从而在所述连续移动的周壁的内壁面上连续地形成沉积膜以暴露于所述微波等离子体。 适用于所述方法的微波等离子体CVD装置。

公开(公告)号：US5527391A

公开(公告)日：1996-06-18

申请号：US426629

申请日：1995-04-21

申请人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

发明人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01J37/3222 ,  C23C16/50 ,  H01J37/32192 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/50 ,  Y02P70/521

摘要： An apparatus for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The apparatus comprises the elements of a continuous traveling band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma.

摘要翻译： 描述了根据微波等离子体CVD工艺连续地形成具有大面积的功能性沉积膜的装置。 该装置包括沿其长度包含导电构件的连续行进的带状构件的元件，在该构件中通过使用行进的带状构件来建立能够基本上保持真空的柱状成膜空间 作为成膜空间的侧壁，通过气体供给装置将用于成膜的起始气体充入成膜空间，同时通过微波天线在垂直于微波运动方向的所有方向上辐射微波 使得微波功率被供应到成膜空间以在空间中引发等离子体，由此膜沉积在构成暴露于等离子体的侧壁的连续行进的带状构件的表面上。

公开(公告)号：US5468521A

公开(公告)日：1995-11-21

申请号：US334032

申请日：1994-11-02

申请人： Masahiro Kanai ,  Yasushi Fujioka ,  Takehito Yoshino ,  Tadashi Hori

发明人： Masahiro Kanai ,  Yasushi Fujioka ,  Takehito Yoshino ,  Tadashi Hori

IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/511 ,  C23C16/54 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  B05D3/06 ,  H01L31/00

CPC分类号： C23C16/455 ,  C23C16/511 ,  C23C16/545 ,  H01L31/075 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A deposited film forming method includes the steps of: continuously carrying a long substrate into or out of a vacuum chamber, flowing a first deposited film forming gas in a reverse direction parallel to the substrate and opposite to a conveying direction of the substrate from first gas discharging means into the vacuum chamber, exhausting the gas from first gas exhausting means, flowing a second deposited film forming gas in a forward direction parallel to the substrate and equivalent to the conveying direction of the substrate, exhausting the gas through the second gas exhausting means, and applying a discharge energy to the first and second gases.

摘要翻译： 沉积膜形成方法包括以下步骤：将长衬底连续地携带到真空室中或从真空室流出，使第一沉积膜形成气体沿平行于衬底的相反方向流动并与第一气体与衬底的输送方向相反 排出装置进入真空室，从第一气体排出装置排出气体，使平行于基板的向前方向流动第二沉积成膜气体并等效于基板的输送方向，排出气体通过第二排气装置 并且向第一和第二气体施加放电能量。

公开(公告)号：US5284525A

公开(公告)日：1994-02-08

申请号：US806347

申请日：1991-12-13

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

IPC分类号： H01L31/0236 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/03921 ,  H01L31/0236 ,  H01L31/075 ,  Y02E10/548

摘要： A solar cell comprising a conductive substrate and semiconductor layers laminated on the conductive substrate, said laminate comprising a p-type layer composed of a non-single crystal Si material, an i-type layer serving as an active layer and an n-type layer, wherein a diamond layer having an uneven surface and containing a valence electron controlling agent is interposed between the conductive substrate and the semiconductor layers.

摘要翻译： 一种太阳能电池，包括导电基板和层叠在导电基板上的半导体层，所述层压体包括由非单晶Si材料构成的p型层，用作有源层的i型层和n型层 其中具有不平坦表面并含有价电子控制剂的金刚石层插入在导电基板和半导体层之间。

公开(公告)号：US4845001A

公开(公告)日：1989-07-04

申请号：US44022

申请日：1987-04-29

申请人： Tetsuya Takei ,  Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka

发明人： Tetsuya Takei ,  Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka

IPC分类号： G03G5/043 ,  G03G5/082 ,  G03G5/147

CPC分类号： G03G5/0825 ,  G03G5/0433 ,  G03G5/082 ,  G03G5/08235 ,  G03G5/14704

摘要： Improved light receiving members which are characterized by having an special surface layer formed of a non-monocrystalline material containing tetrahedrally bonded boron nitride or a non-monocrystalline material containing said boron nitride and trihedrally bonded boron nitride in mingled state or by having an especial surface layer constituted with a lower layer formed of a non-monocrystalline material containing tetrahedrally bonded boron nitride and an upper layer formed of a non-monocrystalline material containing tetrahedrally bonded boron nitride and trihedrally bonded boron nitride in mingled state. The improved light receiving members excel particularly in moisture resistance, repeating use characteristic, electrical voltage withstanding property environmental use characteristic and durability.And the improved light receiving member are particularly advantageous when used as an image-making member in electrophotography since they always exhibit substantially stable electric characteristics without depending upon the working circumstances, maintain a high photosensitivity and a high S/N ratio, do not invite any undesirable influence due to residual voltage even when used repeatedly for a long period of time, cause either defective image nor image flow and have a wealth of cleaning properties.

摘要翻译： 改进的光接收元件的特征在于具有由包含四面体键合的氮化硼的非单晶材料形成的特殊表面层，或者包含混合状态的含有氮化硼和三嵌段结合的氮化硼的非单晶材料，或通过具有特殊的表面层 由含有四面体键合的氮化硼的非单晶材料形成的下层和由包含四面体键合的氮化硼和三嵌段结合的氮化硼混合状态的非单晶材料形成的上层构成。 改进的光接收元件尤其在耐湿性，重复使用特性，耐电压性能环境使用特性和耐久性方面优异。 改进的光接收元件在用作电子照相术中的成像元件时特别有利，因为它们总是表现出基本稳定的电特性，而不依赖于工作环境，保持高的光敏性和高的S / N比，不邀请任何 即使反复使用长时间也会导致由于残留电压引起的不良影响，导致图像不良或图像流动，并具有丰富的清洁性能。

公开(公告)号：US4824749A

公开(公告)日：1989-04-25

申请号：US28777

申请日：1987-03-23

申请人： Shigeru Shirai ,  Keishi Saito ,  Takayoshi Arai ,  Minoru Kato ,  Yasushi Fujioka

发明人： Shigeru Shirai ,  Keishi Saito ,  Takayoshi Arai ,  Minoru Kato ,  Yasushi Fujioka

IPC分类号： G03G5/08 ,  G03G5/082 ,  G03G5/14

CPC分类号： G03G5/08242 ,  G03G5/08235 ,  G03G5/08278 ,  Y10S430/146

摘要： There are provided an improved light receiving member for use in electrophotography and a process for the production thereof. The light receiving member comprises a substrate usable for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of an amorphous or polycrystalline material containing silicon atom as the main constituent and an element for controlling the conductivity, a photoconductive layer formed of an amorphous material containing silicon atom as the main constituent and at least one kind selected from hydrogen atom and halogen atom and a surface layer formed of a polycrystalline material containing silicon atom, carbon atom and hydrogen atom. The polycrystalline material is a polycrystalline material prepared by introducing a precursor capable of contributing to formation of the layer and an active species reactive with the precursor separately into a film deposition space and chemically reacting them.

摘要翻译： 提供了用于电子照相术的改进的光接收元件及其生产方法。 光接收部件包括可用于电子照相的基板和由含有硅原子作为主要成分的非晶或多晶材料形成的电荷注入阻挡层和用于控制导电性的元件构成的光接收层，由 含有硅原子作为主要成分的非晶质材料和选自氢原子和卤素原子的至少一种以及由含有硅原子，碳原子和氢原子的多晶材料形成的表面层。 多晶材料是通过将能够有助于形成层的前体和与前体反应的活性物质引入到膜沉积空间中并使其化学反应而制备的多晶材料。