Abstract:
In a glove manufacturing device, a glove insert with thermoplastic adhesive applied on the outer side is fixed on a glove holding member in a state where it has been inserted into the inner side of the outer material of the glove. The glove insert is then expanded by way of a gas injection means, and the outer material of the glove and the glove insert are bonded. The glove holding member is fixed on the turntable and sent to a heating furnace by this rotating.
Abstract:
A power semiconductor device includes a conductive board and a switching element mounted on the conductive board and electrically connected thereto. The power semiconductor device also includes an integrated circuit mounted on the conductive board at a distance from the switching element and electrically connected thereto. The switching element turns ON/OFF a connection between first and second main electrodes in response to a control signal inputted to a control electrode. The integrated circuit includes a control circuit which controls ON/OFF the switching element and a back side voltage detection element which detects a voltage of the back side of the integrated circuit.
Abstract:
An internal combustion engine ignition device is provided in which an ECU (200) includes a pulse generation circuit (201) that outputs pulse signals (Igt1 and Igt2) and an ion-signal detection/control circuit (300), and a coil driver (400) includes a pulse detection circuit (7) that recognizes a signal received from the pulse generation circuit (201) and an ion-current detection circuit (9); when the pulse signals are not outputted, an ion current is detected and a signal is outputted at the same line as a coil-driver input signal line.
Abstract:
A substrate for epitaxial growth includes a silicon-containing substrate, a silicon-germanium film, and a network-shaped structure. The silicon-germanium film is formed lamellarly on the silicon-containing substrate. The network-shaped structure is disposed adjacent to an interface between the silicon-containing substrate and the silicon-germanium film, and is composed of a 90-degree-dislocation dislocation line elongating continuously. The 90-degree-dislocation dislocation line making the network-shaped structure elongates remarkably long without being broken to short lengths interruptedly so that the 90-degree dislocation is disposed cyclically in planes parallel to the interface. Accordingly, the 90-degree dislocation is present uniformly in planes parallel to the interface. Consequently, strains in the crystal lattice of the silicon-germanium film have been uniformly relaxed more securely.
Abstract:
A silicon substrate is prepared, and a titanium intermediate layer is formed on the silicon substrate. Then, a compound element-containing layer containing compound elements to compose an intended silicide film is formed on the titanium intermediate layer, to form a multilayered intermediate structure, which is thermally treated to form the intended silicide film made of silicon elements of the silicon substrate and the compound elements of the compound element-containing layer.
Abstract:
A mercury lamp of the short arc type which can stably emit an intense spectrum at a wavelength of 365 nm with an extremely narrowed band region over a long time, and which has an anode and a cathode disposed opposite one another in a silica glass arc tube which is filled with mercury and a rare gas, is achieved by the amount of mercury being less than or equal to 1.0 mg/cc of the inside volume of the arc tube and at least one of the gases argon (Ar) and krypton (Kr) are used as the rare gas at room temperature with 1.0 to 8.0 atm.
Abstract:
To devise a mercury lamp of the short arc type with high radiant efficiency and increased arc stability which meets the demand for increasing the amount of radiation from the light source. In a mercury lamp of the short arc type, a cathode and an anode are disposed opposite one another within an arc tube filled with mercury and a rare gas. At least argon (Ar) and/or krypton (Kr) in an amount from 1.0 to 8.0 atm at room temperature is added as the rare gas. In addition, the relationship between various dimensions of the lamp is fixed such that conditions 0.3≦X/L≦0.6, (X+5)/D≦0.85, and (L−(X+5))/D≦0.85 are satisfied, L (mm) being the length of the bulb in the axial direction, X (mm) being the length of the cathode which projects in the axial direction into the emission space, and D (mm) being the maximum outside diameter of the bulb in the radial direction.
Abstract translation:设计具有高辐射效率和增加的电弧稳定性的短弧型汞灯,以满足增加来自光源的辐射量的需求。 在短弧型的水银灯中,阴极和阳极在填充有汞和稀有气体的电弧管内彼此相对设置。 作为稀有气体,加入至少在室温下1.0〜8.0atm的氩(Ar)和/或氪(Kr)。 另外,灯的各种尺寸之间的关系是固定的,使得条件0.3 <= X / L <= 0.6,(X + 5)/ D <= 0.85和(L-(X + 5))/ = 0.85,L(mm)是灯泡在轴向上的长度,X(mm)是沿轴向突出到发射空间中的阴极的长度,D(mm)为最大外径 灯泡直径在径向方向。
Abstract:
A voltage divider circuit is connected between the output terminals of a constant-voltage power supply outputting a constant voltage. A constant-current source varies linearly, relative to temperature, the current level flowing to or from the voltage divider junction of the voltage divider circuit. The constant-current source comprises a first transistor and a second transistor connected to a current mirror circuit, and a resistor connected between the ground and the emitter of the second transistor. The base of the current extracting transistor is connected to the bases of the first transistor and the second transistor, and the collector and emitter are connected between the respective voltage divider junction and ground to obtain a current from the voltage divider junction. A current proportional to temperatures and inversely proportional to the value of the resistor can thereby be obtained from the voltage divider junction.
Abstract:
A mercury lamp of the short arc type with a high degree of maintenance of irradiance is achieved in a mercury lamp of the short arc type by the cathode containing thorium oxide and having a tungsten carbide layer on its surface except at tip end area, by at least one of the cathode or anode being provided with metallic tantalum, and by the condition 1.56.ltoreq.VT/SC being satisfied, where SC is the area of the tungsten carbide layer (cm.sup.2) and VT is the volume of the metallic tantalum (mm.sup.3). Alternatively, a high degree of maintenance of irradiance can be achieved in a mercury lamp of the short arc type by the condition 0.043.ltoreq.VT/VW being satisfied, where VW is the volume of the anode (cm.sup.3) and VT is the volume of the tantalum in the lamp bulb (mm.sup.3).
Abstract:
A hybrid integrated circuit comprises a circuit substrate including an insulation substrate with various devices mounted thereon and with a patterned wiring having at least one selected electrode formed along one side of the insulation substrate and a metal conductor member including a plate portion with a pair of L-shaped clips, formed along one side thereof corresponding to the one side of the circuit substrate, for holding the circuit substrate inserted into the clips which are formed at places corresponding to the selected electrode of the circuit substrate so that the clips and the selected electrode make electrical contact when the circuit substrate is inserted into the clips.