公开(公告)号：US06893501B2

公开(公告)日：2005-05-17

申请号：US10320407

申请日：2002-12-17

申请人： Ki-chul Kim ,  Sung-tae Kim ,  Young-sun Kim ,  Jeong-hee Chung ,  Wan-don Kim ,  Yun-jung Lee ,  Han-mei Choi

发明人： Ki-chul Kim ,  Sung-tae Kim ,  Young-sun Kim ,  Jeong-hee Chung ,  Wan-don Kim ,  Yun-jung Lee ,  Han-mei Choi

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242 ,  C30B25/04

CPC分类号： H01L28/57 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02356 ,  H01L21/31637 ,  H01L27/1085 ,  H01L28/65

摘要： A method for manufacturing a capping layer covering a capacitor of a semiconductor memory device, preferably a metal-insulator-metal (MIM) capacitor, wherein the method includes forming a capacitor having a lower electrode, a dielectric layer and an upper electrode on a semiconductor substrate, forming a capping layer on the capacitor, and crystallizing the dielectric layer. Here, forming the capping layer includes stabilizing for deposition of the capping layer without providing oxygen gas, depositing the capping layer by providing a reaction source for the capping layer; and purging an inside of a reactor for forming the capping layer.

摘要翻译： 一种覆盖半导体存储器件的电容器，优选金属 - 绝缘体 - 金属（MIM）电容器的覆盖层的方法，其中所述方法包括在半导体上形成具有下电极，电介质层和上电极的电容器 衬底，在电容器上形成覆盖层，并使介电层结晶。 这里，形成覆盖层包括在不提供氧气的情况下沉积封盖层的稳定性，通过为封盖层提供反应源沉积覆盖层; 并且清洗用于形成覆盖层的反应器的内部。

公开(公告)号：US07217669B2

公开(公告)日：2007-05-15

申请号：US10888838

申请日：2004-07-12

申请人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

发明人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

IPC分类号： H01L21/31

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

摘要翻译： 在含氧活性蒸气气氛下形成由金属氧化物构成的电介质膜的方法。 在形成电介质膜的方法中，使用金属有机前体和O 2 O 2气体在半导体衬底上形成金属氧化物膜，同时半导体衬底在含有氧的活性气氛下暴露，然后 在半导体衬底在含有氧气的活性蒸气下暴露的同时对金属氧化物膜进行退火。 退火可以在与形成金属氧化物相同或基本上相同的温度下形成金属氧化物膜，和/或至少一种不同的压力，氧浓度或氧气流速的情况下进行，如 金属氧化物形成。

公开(公告)号：US06800570B2

公开(公告)日：2004-10-05

申请号：US10131473

申请日：2002-04-25

申请人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

发明人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

IPC分类号： H01L2131

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

公开(公告)号：US06599807B2

公开(公告)日：2003-07-29

申请号：US10034043

申请日：2001-12-20

申请人： Jae-soon Lim ,  Seung-hwan Lee ,  Han-mei Choi ,  Yun-jung Lee ,  Gab-jin Nam ,  Ki-yeon Park ,  Young-sun Kim ,  Sung-tae Kim

发明人： Jae-soon Lim ,  Seung-hwan Lee ,  Han-mei Choi ,  Yun-jung Lee ,  Gab-jin Nam ,  Ki-yeon Park ,  Young-sun Kim ,  Sung-tae Kim

IPC分类号： H01L2972

CPC分类号： H01L28/55

摘要： A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.

公开(公告)号：US07314806B2

公开(公告)日：2008-01-01

申请号：US11097404

申请日：2005-04-01

申请人： Jae-hyoung Choi ,  Sung-tae Kim ,  Ki-chul Kim ,  Cha-young Yoo ,  Jeong-hee Chung ,  Se-hoon Oh ,  Jeong-sik Choi

发明人： Jae-hyoung Choi ,  Sung-tae Kim ,  Ki-chul Kim ,  Cha-young Yoo ,  Jeong-hee Chung ,  Se-hoon Oh ,  Jeong-sik Choi

IPC分类号： H01L21/20

CPC分类号： H01L21/31122

摘要： A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a metal-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.

摘要翻译： 可以在金属 - 绝缘体 - 金属（MIM）型电容器的金属氮化物下电极上形成金属 - 氮化物种子电介质层。 金属 - 氮化物种子电介质层可以用作阻挡层，以在例如用于在包括MIM型的集成电路中形成上层金属化/结构的后端处理中减少与金属氮化物下电极的反应 电容器。 包含在金属 - 氮氧化物种子电介质层中的氮可以减少在常规型MIM电容器中可能发生的反应类型。 可以在金属 - 氮化物种子介电层上形成金属氧化物主介电层，并且可以与MIM型电容器中的金属 - 氮化物种子电介质层保持分离。 金属氧化物主电介质层可以被稳定（使用例如热或等离子体处理）以从其中去除缺陷（例如碳）并调整金属氧化物主介电层的化学计量。

公开(公告)号：US20050227432A1

公开(公告)日：2005-10-13

申请号：US11097404

申请日：2005-04-01

申请人： Jae-hyoung Choi ,  Sung-tae Kim ,  Ki-chul Kim ,  Cha-young Yoo ,  Jeong-hee Chung ,  Se-hoon Oh ,  Jeong-sik Choi

发明人： Jae-hyoung Choi ,  Sung-tae Kim ,  Ki-chul Kim ,  Cha-young Yoo ,  Jeong-hee Chung ,  Se-hoon Oh ,  Jeong-sik Choi

IPC分类号： H01L27/108 ,  H01L21/311 ,  H01L21/8242

CPC分类号： H01L21/31122

摘要： A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a meta-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.

摘要翻译： 可以在间绝缘子金属（MIM）型电容器的金属氮化物下电极上形成金属 - 氮氧化物种子电介质层。 金属 - 氮化物种子电介质层可以用作阻挡层，以在例如用于在包括MIM型的集成电路中形成上层金属化/结构的后端处理中减少与金属氮化物下电极的反应 电容器。 包含在金属 - 氮氧化物种子电介质层中的氮可以减少在常规型MIM电容器中可能发生的反应类型。 可以在金属 - 氮化物种子介电层上形成金属氧化物主介电层，并且可以与MIM型电容器中的金属 - 氮化物种子电介质层保持分离。 金属氧化物主电介质层可以被稳定（使用例如热或等离子体处理）以从其中去除缺陷（例如碳）并调整金属氧化物主介电层的化学计量。

公开(公告)号：US07510931B2

公开(公告)日：2009-03-31

申请号：US11605452

申请日：2006-11-29

申请人： Ki-yeon Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

发明人： Ki-yeon Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/4763

CPC分类号： H01L29/792 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/3162 ,  H01L29/513 ,  H01L29/66833

摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a first charge blocking layer on the charge trapping layer by supplying a metal source gas and a first oxidizing gas onto the charge trapping layer, forming a second charge blocking layer on the first charge blocking layer by supplying a metal source gas and a second oxidizing gas onto the first charge blocking layer, wherein the second oxidizing gas has a higher oxidizing power as compared to the first oxidizing gas, and forming a gate electrode layer on the second charge blocking layer.

摘要翻译： 一种制造非易失性存储器件的方法包括：在半导体衬底上形成电荷隧穿层，在电荷隧道层上形成电荷俘获层，在电荷俘获层上形成第一电荷阻挡层，通过提供金属源气体和第一 在电荷捕获层上氧化气体，通过在第一电荷阻挡层上提供金属源气体和第二氧化气体，在第一电荷阻挡层上形成第二电荷阻挡层，其中第二氧化气体具有较高的氧化能力， 并且在第二电荷阻挡层上形成栅极电极层。

公开(公告)号：US20080096349A1

公开(公告)日：2008-04-24

申请号：US11605452

申请日：2006-11-29

申请人： Ki-yeon Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

发明人： Ki-yeon Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/3162 ,  H01L29/513 ,  H01L29/66833

摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a first charge blocking layer on the charge trapping layer by supplying a metal source gas and a first oxidizing gas onto the charge trapping layer, forming a second charge blocking layer on the first charge blocking layer by supplying a metal source gas and a second oxidizing gas onto the first charge blocking layer, wherein the second oxidizing gas has a higher oxidizing power as compared to the first oxidizing gas, and forming a gate electrode layer on the second charge blocking layer.

摘要翻译： 一种制造非易失性存储器件的方法包括：在半导体衬底上形成电荷隧穿层，在电荷隧道层上形成电荷俘获层，在电荷俘获层上形成第一电荷阻挡层，通过提供金属源气体和第一 在电荷捕获层上氧化气体，通过在第一电荷阻挡层上提供金属源气体和第二氧化气体，在第一电荷阻挡层上形成第二电荷阻挡层，其中第二氧化气体具有较高的氧化能力， 并且在第二电荷阻挡层上形成栅极电极层。

公开(公告)号：US20090096008A1

公开(公告)日：2009-04-16

申请号：US12249004

申请日：2008-10-10

申请人： Sun-jung Kim ,  Young-geun Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Se-hoon Oh ,  Young-sun Kim ,  Sung-tae Kim

发明人： Sun-jung Kim ,  Young-geun Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Se-hoon Oh ,  Young-sun Kim ,  Sung-tae Kim

IPC分类号： H01L29/788 ,  H01L23/58

CPC分类号： H01L29/42332 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42348

摘要： A nonvolatile memory device having a blocking insulating layer with an excellent data retention property and a method of fabricating the same are provided. The nonvolatile memory device may include a semiconductor substrate having a channel region formed therein; and a gate stack including a tunneling insulating layer, a charge storing layer, a blocking insulating layer and a control gate electrode sequentially stacked on the channel region of the semiconductor substrate. The blocking insulating layer may comprise a lanthanum aluminum oxide having a formula of La2-xAlxOy and the composition parameter x may be 1

摘要翻译： 提供了具有优异数据保存性能的阻挡绝缘层的非易失性存储器件及其制造方法。 非易失性存储器件可以包括其中形成有沟道区的半导体衬底; 以及栅极堆叠，其包括顺序堆叠在半导体衬底的沟道区上的隧道绝缘层，电荷存储层，阻挡绝缘层和控制栅电极。 阻挡绝缘层可以包含具有下式的La 2-x Al x O y的氧化镧铝，组成参数x可以是1

公开(公告)号：US20080096340A1

公开(公告)日：2008-04-24

申请号：US11605236

申请日：2006-11-29

申请人： Se-hoon Oh ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

发明人： Se-hoon Oh ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L21/8238

CPC分类号： H01L29/513 ,  G11C16/0466 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/3185 ,  H01L29/40117

摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a charge blocking layer on the charge trapping layer by supplying sequentially a metal source gas and an oxidizing gas onto the charge trapping layer, such that a supplying time of the oxidizing gas is form about 0.1 second to about 1.0 second, and forming a gate electrode layer on the charge blocking layer.

摘要翻译： 一种制造非易失性存储器件的方法包括在半导体衬底上形成电荷隧道层，在电荷隧穿层上形成电荷俘获层，在电荷俘获层上形成电荷阻挡层，依次提供金属源气体和氧化 气体进入电荷捕获层，使得氧化气体的供给时间形成约0.1秒至约1.0秒，并在电荷阻挡层上形成栅极电极层。