公开(公告)号：US11492704B2

公开(公告)日：2022-11-08

申请号：US16539317

申请日：2019-08-13

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Lit Ping Lam ,  Preetham Rao ,  Kartik Shah ,  Ian Ong ,  Nyi O. Myo ,  Brian H. Burrows

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C23C16/458

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US09982364B2

公开(公告)日：2018-05-29

申请号：US15092875

申请日：2016-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： David Masayuki Ishikawa ,  Paul J. Steffas ,  Sumedh Acharya ,  Brian H. Burrows

IPC: C30B25/10 ,  C30B25/22 ,  H01L31/18 ,  H01L21/67 ,  H01L21/687 ,  C30B25/12 ,  C30B25/14 ,  C30B29/06 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02

CPC classification number: C30B25/22 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/4557 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68771 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: In some embodiments, an substrate processing system may include a chamber body, a heater assembly disposed within the chamber body, wherein the heater assembly includes a plurality of resistive heater elements coupled together to form an isothermal heated enclosure, and a process kit disposed within the isothermal heated enclosure and having an inner processing volume that includes a plurality of substrate supports to support substrates when disposed thereon, wherein the process kit includes a first processing gas inlet to provide processing gases to the inner processing volume, a first carrier gas inlet to provide a carrier gas to the inner processing volume, and a first exhaust outlet, and a first gas heater coupled via a first conduit to the first carrier gas inlet to heat the carrier gas prior to flowing into the inner processing volume.

公开(公告)号：US12037701B2

公开(公告)日：2024-07-16

申请号：US17218892

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Shu-Kwan Danny Lau ,  Brian H. Burrows ,  Lori Washington ,  Herman Diniz ,  Martin A. Hilkene ,  Richard O. Collins ,  Nyi O. Myo ,  Manish Hemkar ,  Schubert S. Chu

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C30B25/105 ,  H01L21/6719 ,  C30B25/08

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

公开(公告)号：US11578004B2

公开(公告)日：2023-02-14

申请号：US16306171

申请日：2017-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： David Masayuki Ishikawa ,  Brian H. Burrows

IPC: C23C16/34 ,  C04B35/628 ,  C04B35/80 ,  C23C16/04 ,  C23C16/54 ,  B65H51/00

Abstract: Methods and apparatus for depositing material on a continuous substrate are provided herein. In some embodiments, an apparatus for processing a continuous substrate includes: a first chamber having a first volume; a second chamber having a second volume fluidly coupled to the first volume; and a plurality of process chambers, each having a process volume defining a processing path between the first chamber and the second chamber, wherein the process volume of each process chamber is fluidly coupled to each other, to the first volume, and to the second volume, and wherein the first chamber, the second chamber, and the plurality of process chambers are configured to process a continuous substrate that extends from the first chamber, through the plurality of process chambers, and to the second chamber.

公开(公告)号：US09644267B2

公开(公告)日：2017-05-09

申请号：US13937815

申请日：2013-07-09

Applicant: Applied Materials, Inc.

Inventor： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James David Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

IPC: C23C16/455 ,  C30B25/14 ,  C30B29/40

CPC classification number: C23C16/45565 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T137/0318 ,  Y10T137/87153

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

公开(公告)号：US11807931B2

公开(公告)日：2023-11-07

申请号：US17961040

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Lit Ping Lam ,  Preetham Rao ,  Kartik Shah ,  Ian Ong ,  Nyi O. Myo ,  Brian H. Burrows

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C23C16/458

CPC classification number: C23C16/45572 ,  C23C16/4583 ,  C23C16/46

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US11189508B2

公开(公告)日：2021-11-30

申请号：US16581029

申请日：2019-09-24

Applicant: Applied Materials, Inc.

Inventor： Ji-Dih Hu ,  Brian H. Burrows ,  Janardhan Devrajan ,  Schubert Chu

IPC: H01L21/67 ,  C23C16/44 ,  C30B25/08 ,  G01J5/00 ,  H05B3/00 ,  G01K11/12 ,  G01J5/02 ,  G01J5/08

Abstract: Embodiments described herein generally relate to an in-situ metrology system that can constantly provide an uninterrupted optical access to a substrate disposed within a process chamber. In one embodiment, a metrology system for a substrate processing chamber is provided. The metrology system includes a sensor view pipe coupling to a quartz dome of a substrate processing chamber, a flange extending radially from an outer surface of the sensor view pipe, and a viewport window disposed on the flange, the viewport window having spectral ranges chosen for an optical sensor that is disposed on or adjacent to the viewport window.

公开(公告)号：US10995419B2

公开(公告)日：2021-05-04

申请号：US16427812

申请日：2019-05-31

Applicant: Applied Materials, Inc.

Inventor： Brian H. Burrows ,  Ala Moradian ,  Kartik Shah ,  Shu-Kwan Lau

IPC: C30B25/02 ,  C30B25/14 ,  H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  C30B29/40

Abstract: Embodiment disclosed herein include a liner assembly, comprising an injector plate liner, a gas injector liner coupled to the injector plate liner, an upper process gas liner coupled to the gas injector liner, a lower process gas liner coupled to the upper process gas liner, and an injector plate positioned between the injector plate liner and the upper process gas liner, wherein a cooling fluid channel is formed in the injector plate adjacent to the gas injector liner.