公开(公告)号：US20030140988A1

公开(公告)日：2003-07-31

申请号：US10059822

申请日：2002-01-28

申请人： APPLIED MATERIALS, INC.

发明人： Srinivas Gandikota ,  Chris R. McGuirk ,  Deenesh Padhi ,  Muhammad Atif Malik ,  Sivakami Ramanathan ,  Girish A. Dixit ,  Robin Cheung

IPC分类号： C22F001/00

CPC分类号： H01L21/76843 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1696 ,  C23C18/1831 ,  C23C18/28 ,  C23C18/30 ,  C23C18/38 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/6708 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76874 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S428/936

摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a nullpatchnull of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

摘要翻译： 一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。 贵金属的实例包括钯和铂。 半贵金属的实例包括钴，镍和钨。 可通过无电沉积，电镀或化学气相沉积来沉积催化层。 在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。 在另一个实施方案中，催化剂层可以沉积在阻挡层上。 在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。 一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。 在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。 在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。 在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

公开(公告)号：US20030201170A1

公开(公告)日：2003-10-30

申请号：US10133786

申请日：2002-04-24

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Muhammad Atif Malik ,  Michael Wood

IPC分类号： C25C007/04

CPC分类号： C25D7/12 ,  C25D17/005 ,  C25D17/008 ,  C25F7/00

摘要： An electrolyte cell receives a substrate for processing, a first electrode disposed in the electrolyte cell, the first electrode comprising at least a contact ring, a second electrode disposed within the electrolyte cell and spaced from the first electrode, and a porous membrane that is connected to the electrolyte cell and extends across at least a portion of the electrolyte cell, the membrane is positioned between a location for positioning a substrate when processing and surrounding electrolyte.

摘要翻译： 电解质电池接收用于处理的衬底，设置在电解质电池中的第一电极，第一电极至少包括接触环，设置在电解质电池内并与第一电极间隔开的第二电极和连接的电极 并且延伸穿过电解质电池的至少一部分，当处理和围绕电解质时，膜位于用于定位衬底的位置之间。

公开(公告)号：US20030159937A1

公开(公告)日：2003-08-28

申请号：US10085822

申请日：2002-02-27

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Chris R. McGuirk ,  Deenesh Padhi ,  Sivakami Ramanathan ,  Muhammad Atif Malik ,  Girish A. Dixit

IPC分类号： C25D021/18

CPC分类号： C25D21/14 ,  C25D21/18

摘要： Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods. The apparatus generally includes a selectively actuated valve in communicaiton with a fluid delivery line, wherein the valve is configured to fluidly isolate a plating cell during a non-processing time period. The valve may be controlled by a system controller, and thus, the fluid level in the cell may be controlled during a non-processing time period.

摘要翻译： 本发明的实施方案通常提供用于在电镀浴中补充有机分子的装置和方法。 本发明的补充方法可以在实时的基础上进行，因此有机物的浓度最小化从期望的浓度水平变化。 补充方法通常包括进行预处理耗尽测量，以便确定在电镀系统中施加的每个电流密度的有机耗尽率。 一旦确定了每个电流密度的有机耗尽率，则这些耗尽率可以应用于电镀处理配方以计算每个配方步骤的有机耗尽量。 然后可以使用每个配方步骤的计算的有机耗尽体积来确定每个配方步骤所需的每单位时间的有机分子补充体积，以维持电镀溶液中所需的有机物浓度。 计算的补充量然后可以被添加到处理配方中，使得补货过程可以在处理时段期间实时发生。 该装置通常包括与流体输送管线通信的选择性致动的阀，其中阀被配置为在非处理时间段期间流体地隔离电镀槽。 阀可以由系统控制器控制，因此，可以在非处理时间段期间控制单元中的液位。

公开(公告)号：US20030143837A1

公开(公告)日：2003-07-31

申请号：US10059851

申请日：2002-01-28

申请人： APPLIED MATERIALS, INC.

发明人： Srinivas Gandikota ,  Chris R. McGuirk ,  Deenesh Padhi ,  Muhammad Atif Malik ,  Sivakami Ramanathan ,  Girish A. Dixit ,  Robin Cheung

IPC分类号： H01L021/44 ,  H01L021/4763

CPC分类号： H01L21/76843 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1671 ,  C23C18/1696 ,  C23C18/1879 ,  C23C18/38 ,  C25D5/10 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76874 ,  H01L21/76877 ,  H01L2221/1089

摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a nullpatchnull of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

摘要翻译： 一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。 贵金属的实例包括钯和铂。 半贵金属的实例包括钴，镍和钨。 可通过无电沉积，电镀或化学气相沉积来沉积催化层。 在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。 在另一个实施方案中，催化剂层可以沉积在阻挡层上。 在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。 一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。 在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。 在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。 在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

公开(公告)号：US20030209523A1

公开(公告)日：2003-11-13

申请号：US10143401

申请日：2002-05-09

申请人： Applied Materials, Inc.

发明人： Deenesh Padhi ,  Srinivas Gandikota ,  Chunping Long ,  Sivakami Ramanathan ,  Chris R. McGuirk ,  Girish Dixit ,  Muhammad Atif Malik

IPC分类号： C03C025/68 ,  C23F001/00

CPC分类号： H01L21/68728 ,  B24B1/04 ,  B24B37/04 ,  B24B51/00 ,  B24B57/02 ,  C23F3/06 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/67051 ,  H01L21/68792

摘要： Methods, compositions, and apparatus are provided for planarizing conductive materials disposed on a substrate surface by an chemical polishing technique. In one aspect, a substrate having conductive material disposed thereon is disposed on a substrate support and exposed to a composition containing an oxidizing agent and an inorganic etchant. The substrate is planarized by the composition without the presence of mechanical abrasion. The substrate may optionally be rotated, agitated, or both during exposure to the composition. The method removes conductive materials forming protuberances on the substrate surface at a higher rate than conductive materials forming recesses on the substrate surface.

摘要翻译： 提供了通过化学抛光技术平面化设置在基板表面上的导电材料的方法，组合物和装置。 在一个方面，其上设置有导电材料的基板设置在基板支撑件上并暴露于含有氧化剂和无机蚀刻剂的组合物。 基体被组合物平坦化，而不存在机械磨损。 在暴露于组合物期间，可任选地将基材旋转，搅拌或两者。 该方法以比在衬底表面上形成凹槽的导电材料更高的速率移除在衬底表面上形成突起的导电材料。

公开(公告)号：US20030159936A1

公开(公告)日：2003-08-28

申请号：US10085338

申请日：2002-02-27

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Chris R. McGuirk ,  Deenesh Padhi ,  Sivakami Ramanathan ,  Muhammad Atif Malik ,  Girish A. Dixit

IPC分类号： C25D021/06 ,  C25D021/16 ,  C25D017/00

CPC分类号： C25D21/18 ,  C25D21/14

摘要： Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods. The apparatus generally includes a selectively actuated valve in communicaiton with a fluid delivery line, wherein the valve is configured to fluidly isolate a plating cell during a non-processing time period. The valve may be controlled by a system controller, and thus, the fluid level in the cell may be controlled during a non-processing time period.

摘要翻译： 本发明的实施方案通常提供用于在电镀浴中补充有机分子的装置和方法。 本发明的补充方法可以在实时的基础上进行，因此有机物的浓度最小化从期望的浓度水平变化。 补充方法通常包括进行预处理耗尽测量，以便确定在电镀系统中施加的每个电流密度的有机耗尽率。 一旦确定了每个电流密度的有机耗尽率，则这些耗尽率可以应用于电镀处理配方以计算每个配方步骤的有机耗尽量。 然后可以使用每个配方步骤的计算的有机耗尽体积来确定每个配方步骤所需的每单位时间的有机分子补充体积，以维持电镀溶液中所需的有机物浓度。 计算的补充量然后可以被添加到处理配方中，使得补货过程可以在处理时段期间实时发生。 该装置通常包括与流体输送管线通信的选择性致动的阀，其中阀被配置为在非处理时间段期间流体地隔离电镀槽。 阀可以由系统控制器控制，因此，可以在非处理时间段期间控制单元中的液位。