公开(公告)号：US20210257252A1

公开(公告)日：2021-08-19

申请号：US16792646

申请日：2020-02-17

Applicant: Applied Materials, Inc.

Inventor： Maximillian CLEMONS ,  Nikolaos BEKIARIS ,  Srinivas D. NEMANI

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32

Abstract: Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.

公开(公告)号：US20180211872A1

公开(公告)日：2018-07-26

申请号：US15874041

申请日：2018-01-18

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan WU ,  Nikolaos BEKIARIS ,  Mehul B. NAIK ,  Jin Hee PARK ,  Mark Hyun LEE

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/288 ,  H01L21/285

CPC classification number: H01L21/76846 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/2885 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76882 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53252

Abstract: In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.

公开(公告)号：US20240379420A1

公开(公告)日：2024-11-14

申请号：US18781633

申请日：2024-07-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Shi YOU ,  He REN ,  Naomi YOSHIDA ,  Nikolaos BEKIARIS ,  Mehul NAIK ,  Martin Jay SEAMONS ,  Jingmei LIANG ,  Mei-Yee SHEK

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/67

Abstract: Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material

公开(公告)号：US20230187276A1

公开(公告)日：2023-06-15

申请号：US18108338

申请日：2023-02-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Shi YOU ,  He REN ,  Naomi YOSHIDA ,  Nikolaos BEKIARIS ,  Mehul NAIK ,  Jay Martin SEAMONS ,  Jingmei LIANG ,  Mei-Yee SHEK

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/76837 ,  H01L21/76828 ,  H01L21/76826 ,  H01L21/02337 ,  H01L21/76825 ,  H01L21/02323 ,  H01L21/76834 ,  H01L21/67103 ,  H01L21/02326

Abstract: Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material

公开(公告)号：US20220230887A1

公开(公告)日：2022-07-21

申请号：US17150280

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Meiyee SHEK ,  Maximillian CLEMONS ,  Srinivas D. NEMANI ,  Nikolaos BEKIARIS ,  Ellie YIEH

IPC: H01L21/311

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes heating a substrate disposed in an interior volume of a process chamber and having a boron-containing film deposited thereon to a predetermined temperature; and supplying water vapor in a non-plasma state to the interior volume at a predetermined pressure for a predetermined time, while maintaining the substrate at the predetermined temperature to anneal the substrate for the predetermined time and remove the boron-containing film.

公开(公告)号：US20240128121A1

公开(公告)日：2024-04-18

申请号：US18392534

申请日：2023-12-21

Applicant: Applied Materials, Inc.

Inventor： Maximillian CLEMONS ,  Nikolaos BEKIARIS ,  Srinivas D. NEMANI

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/76837 ,  H01J37/32009 ,  H01L21/02271 ,  H01J2237/3321

Abstract: Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.

公开(公告)号：US20220301867A1

公开(公告)日：2022-09-22

申请号：US17208719

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Jethro TANNOS ,  Bhargav Sridhar CITLA ,  Srinivas D. NEMANI ,  Ellie YIEH ,  Joshua Alan RUBNITZ ,  Erica CHEN ,  Soham Sunjay ASRANI ,  Nikolaos BEKIARIS ,  Douglas Arthur BUCHBERGER, JR.

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  C23C16/40 ,  C23C16/56 ,  C23C16/458

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

公开(公告)号：US20220298636A1

公开(公告)日：2022-09-22

申请号：US17208735

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Soham Sunjay ASRANI ,  Joshua Alan RUBNITZ ,  Bhargav Sridhar CITLA ,  Srinivas D. NEMANI ,  Erica CHEN ,  Nikolaos BEKIARIS ,  Douglas Arthur BUCHBERGER, JR. ,  Jethro TANNOS ,  Ellie YIEH

IPC: C23C16/455 ,  C23C16/515 ,  C23C16/505 ,  C23C16/52 ,  C23C16/458

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.

公开(公告)号：US20210317580A1

公开(公告)日：2021-10-14

申请号：US16848784

申请日：2020-04-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Shi YOU ,  He REN ,  Naomi YOSHIDA ,  Nikolaos BEKIARIS ,  Mehul NAIK ,  Martin Jay SEAMONS ,  Jingmei LIANG ,  Mei-Yee SHEK

IPC: C23C16/56 ,  H01L21/768

Abstract: Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material

公开(公告)号：US20210111067A1

公开(公告)日：2021-04-15

申请号：US16653601

申请日：2019-10-15

Applicant: Applied Materials, Inc.

Inventor： Hao JIANG ,  Nikolaos BEKIARIS ,  Erica CHEN ,  Mehul B. NAIK

IPC: H01L21/768 ,  H01L21/762 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/30 ,  H01L21/324 ,  H01L21/02

Abstract: Methods for forming an interconnections structure on a substrate in a cluster processing system and thermal processing such interconnections structure are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a barrier layer in an opening formed in a material layer disposed on a substrate, forming an interface layer on the barrier layer, forming a gap filling layer on the interface layer, and performing an annealing process on the substrate, wherein the annealing process is performed at a pressure range greater than 5 bar.