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    In-situ temperature mapping for epi chamber
    2.
    发明授权
    In-situ temperature mapping for epi chamber 有权

    公开(公告)号：US11261538B1

    公开(公告)日：2022-03-01

    申请号：US17027385

    申请日：2020-09-21

    Applicant: Applied Materials, Inc.

    Inventor： Ala Moradian ,  Zuoming Zhu ,  Patricia M. Liu ,  Shu-Kwan Lau ,  Flora Fong-Song Chang ,  Enle Choo ,  Zhiyuan Ye

    IPC: C30B25/16 ,  H01L21/67 ,  C30B25/10

    Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

    EPI pre-heat ring
    5.
    发明授权
    EPI pre-heat ring 有权

    公开(公告)号：US10047457B2

    公开(公告)日：2018-08-14

    申请号：US14461137

    申请日：2014-08-15

    Applicant: Applied Materials, Inc.

    Inventor： Kartik Shah ,  Shu-Kwan Lau

    IPC: C23C16/458 ,  C30B25/08 ,  C30B25/14 ,  C30B25/12 ,  C30B25/10

    CPC classification number: C30B25/14 ,  C23C16/4585 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  Y10T428/218

    Abstract: Embodiments of the present disclosure generally relate to a process chamber having a pre-heat ring for heating the process gas. In one embodiment, the process chamber includes a chamber body defining an interior processing region, a substrate support disposed within the chamber body, the substrate support having a substrate support surface for supporting a substrate, and a pre-heat ring positioned on a ring support disposed within the chamber body, wherein a portion of the pre-heat ring is tilted downwardly by a predetermined angle towards the gas exhaust side with respect to the substrate support surface to promote the purge gas flowing more through the gas exhaust side than the gas injection side.

    Flow controlled liner having spatially distributed gas passages
    7.
    发明授权
    Flow controlled liner having spatially distributed gas passages 有权
    流动控制衬管具有空间分布的气体通道

    公开(公告)号：US09553002B2

    公开(公告)日：2017-01-24

    申请号：US14259898

    申请日：2014-04-23

    Applicant: Applied Materials, Inc.

    Inventor： Mehmet Tugrul Samir ,  Shu-Kwan Lau

    IPC: H01L23/48 ,  H01L21/67 ,  C23C16/44 ,  C23C16/455

    CPC classification number: H01L21/67017 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45519 ,  H01L21/67115 ,  H01L21/67253 ,  Y10T137/87265

    Abstract: Embodiments of the present disclosure provide a liner assembly including a plurality of individually separated gas passages. The liner assembly enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present disclosure.

    Abstract translation: 本公开的实施例提供了一种衬套组件，其包括多个单独分离的气体通道。 衬套组件使得能够处理正在处理的衬底上的流动参数（例如速度，密度，方向和空间位置）的可维护性。 正在处理的衬底上的处理气体可以根据本公开的实施例专门针对具有衬套组件的各个工艺进行定制。

    Susceptor support shaft with uniformity tuning lenses for EPI process
    8.
    发明授权
    Susceptor support shaft with uniformity tuning lenses for EPI process 有权
    受体支撑轴具有用于EPI过程的均匀性调焦镜头

    公开(公告)号：US09532401B2

    公开(公告)日：2016-12-27

    申请号：US14181035

    申请日：2014-02-14

    Applicant: Applied Materials, Inc.

    Inventor： Zhepeng Cong ,  Balasubramanian Ramachandran ,  Masato Ishii ,  Xuebin Li ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Paul Brillhart

    IPC: F27D5/00 ,  C23C14/00 ,  H01L21/302 ,  H05B1/02

    CPC classification number: H05B1/0227 ,  H05B2203/032

    Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

    Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。 在一些实施例中，定制的折射元件可以可移除地放置在固体盘的顶部上，以重新分布穿过基座和/或衬底的二次热分布，以获得外延工艺的最佳厚度均匀性。

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