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    Semiconductor material having bipolar transistor structure and semiconductor device using same
    1.
    发明申请
    Semiconductor material having bipolar transistor structure and semiconductor device using same 审中-公开
    具有双极晶体管结构的半导体材料和使用其的半导体器件

    公开(公告)号：US20060180833A1

    公开(公告)日：2006-08-17

    申请号：US10539006

    申请日：2003-12-16

    申请人： Akira Inoue ,  Masahiko Hata ,  Yasuyuki Kurita

    发明人： Akira Inoue ,  Masahiko Hata ,  Yasuyuki Kurita

    IPC分类号： H01L31/109

    CPC分类号： H01L29/7371 ,  H01L29/0821

    摘要： In an epitaxial substrate (20) comprising a collector layer (22), a base layer (23) and an emitter layer (24) formed on a semi-insulating GaAs substrate (21), a hole barrier layer (22C) is provided in the collector layer (22) to prevent influx of holes from the base layer (23), whereby the flow of collector current is suppressed when the collector current density rises and electron velocity is saturated, suppressing thermal runaway of the collector current without a ballast resistance or the like. Also, thermal runaway of the collector current is suppressed by providing an additional layer (2C) for generating, in the conduction band, an electron barrier by means of electrons accumulated in the collector layer (2) when the collector current density rises.

    摘要翻译： 在包括集电极层（22），形成在半绝缘GaAs衬底（21）上的基极层（23）和发射极层（24））的外延衬底（20）中，提供了空穴阻挡层（22C） 在集电体层（22）中，为了防止从基底层（23）流入空穴，由此当集电极电流密度上升，电子速度饱和时，集电极电流的流动受到抑制，抑制了没有镇流器的集电极电流的热失控 电阻等。 此外，通过设置用于在集电极电流密度上升时通过积聚在集电极层（2）中的电子在导带中产生电子势垒的附加层（2C）来抑制集电极电流的热失控。

    Semiconductor material for electronic device and semiconductor element using same
    2.
    发明申请
    Semiconductor material for electronic device and semiconductor element using same 审中-公开
    用于电子器件的半导体材料和使用其的半导体元件

    公开(公告)号：US20060249761A1

    公开(公告)日：2006-11-09

    申请号：US10539008

    申请日：2003-12-16

    申请人： Akira Inoue ,  Masahiko Hata

    发明人： Akira Inoue ,  Masahiko Hata

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

    CPC分类号： H01L29/7371 ,  H01L29/1004

    摘要： In an epitaxial substrate comprising a bipolar transistor structure having a collector layer (3), base layer (4) and emitter layer (5) on a GaAs substrate (2), the base layer (4) is configured a lower base layer (41) having a required carrier concentration, an upper base layer (42), and a low carrier concentration layer (43) provided between the lower base layer (41) and the upper base layer (42) that has a ballast effect. The lower base layer (41) or the upper base layer (42) may be omitted. The higher the temperature of the low carrier concentration layer (43) portion is, the easier it is for electrons to pass therethrough, which has the effect of raising the amplification factor, thereby helping the transistor heat stability characteristics.

    摘要翻译： 在包括在GaAs衬底（2）上具有集电极层（3），基底层（4）和发射极层（5））的双极晶体管结构的外延衬底中，基底层（4）被构造为下部基底层 ）具有设置在具有镇流效应的下基底层（41）和上基底层（42）之间的上基底层（42）和低载流子浓度层（43）。 可以省略下基层（41）或上基层（42）。 低载流子浓度层（43）部分的温度越高，电子越容易通过，这具有提高放大系数的作用，从而有助于晶体管的热稳定性。

    Information presentation system and in-vehicle apparatus
    3.
    发明授权
    Information presentation system and in-vehicle apparatus 有权
    信息呈现系统和车载设备

    公开(公告)号：US09037345B2

    公开(公告)日：2015-05-19

    申请号：US14001070

    申请日：2012-03-08

    申请人： Akira Inoue

    发明人： Akira Inoue

    IPC分类号： G06F3/14 ,  H04M1/725

    CPC分类号： G06F3/1423 ,  H04M1/7253 ,  H04M1/72577

    摘要： A mobile terminal displays a screen image provided by an image data which is produced. An in-vehicle apparatus is fixed to a vehicle or is mounted on the vehicle to be portable. The mobile terminal sends the image data to the in-vehicle apparatus through communication such that a vehicle display portion of the in-vehicle apparatus displays a screen image provided by the image data. In a case where a communication between the in-vehicle apparatus and the mobile terminal is established, when one of the mobile terminal or the in-vehicle apparatus, in which an input operation has been performed prior to the other of the mobile terminal or the in-vehicle apparatus, is in operation, only the one of the mobile terminal or the in-vehicle apparatus is operable.

    摘要翻译： 移动终端显示由所生成的图像数据提供的屏幕图像。 车载设备固定在车辆上或安装在车辆上以便携带。 移动终端通过通信将图像数据发送到车载设备，使得车载设备的车辆显示部分显示由图像数据提供的屏幕图像。 在建立车载设备与移动终端之间的通信的情况下，当移动终端或车载设备中的一个在移动终端或另一个移动终端之前进行了输入操作时 车载设备正在操作中，只有移动终端或车载设备中的一个可操作。

    Noise reducing apparatus, noise reducing method, and noise reducing program for improving image quality
    7.
    发明授权
    Noise reducing apparatus, noise reducing method, and noise reducing program for improving image quality 有权
    降噪装置，降噪方法和降噪程序，提高图像质量

    公开(公告)号：US08532428B2

    公开(公告)日：2013-09-10

    申请号：US12528773

    申请日：2008-02-04

    申请人： Akira Inoue

    发明人： Akira Inoue

    IPC分类号： G06K9/40

    CPC分类号： G06T5/002 ,  G06T2207/20008 ,  H04N1/409 ,  H04N5/21

    摘要： A noise reducing apparatus and associated method and program for improving image quality in an image are provided. The noise reducing apparatus detects a flat area from an image and analyzes the noise from the flat area, and then it suppresses a noise component of the image based on the noise analysis result.

    摘要翻译： 提供了一种用于改善图像中的图像质量的降噪装置和相关联的方法和程序。 噪声降低装置从图像检测平坦区域，并分析来自平坦区域的噪声，然后基于噪声分析结果抑制图像的噪声分量。

    NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR
    8.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR 有权
    氮化物半导体发光元件及其制造方法

    公开(公告)号：US20130214288A1

    公开(公告)日：2013-08-22

    申请号：US13880027

    申请日：2012-05-02

    申请人： Toshiya Yokogawa ,  Junko Iwanaga ,  Akira Inoue

    发明人： Toshiya Yokogawa ,  Junko Iwanaga ,  Akira Inoue

    IPC分类号： H01L33/32

    CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

    摘要： A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10−4≦D≦14.1×10−4. The area of the p-side electrode, S, is in the range of 1×102 μm2≦S≦9×104 μm2. A maximum current density which leads to 88% of a maximum of the external quantum efficiency is not less than 2 A/mm2.

    摘要翻译： 实施方式的氮化物系半导体发光元件具有半导体层叠结构，该半导体层叠结构具有作为m面的生长面并由GaN系半导体构成。 半导体多层结构包括n型半导体层，p型半导体层，设置在p型半导体层上的p侧电极以及介于n型半导体层和p型半导体层之间的有源层 半导体层。 有源层的厚度与n型半导体层的厚度D之比在1.8×10 -4 @ D @ 14.1×10 -4的范围内。 p侧电极S的面积在1×102mum2 @ S @ 9×104mum2的范围内。 导致外部量子效率最大值的88％的最大电流密度不小于2A / mm2。

    Image correction method, image correction device, and program
    9.
    发明授权
    Image correction method, image correction device, and program 有权
    图像校正方法，图像校正装置和程序

    公开(公告)号：US08494265B2

    公开(公告)日：2013-07-23

    申请号：US12739777

    申请日：2008-10-17

    申请人： Satoshi Katoh ,  Akira Inoue

    发明人： Satoshi Katoh ,  Akira Inoue

    IPC分类号： G06T5/00

    CPC分类号： H04N9/68 ,  G06K9/00684 ,  H04N1/60

    摘要： An image correction device includes a scene belonging rate computation unit that computes, from the feature value of an input image, a plurality of scene belonging rates each of which prescribes a probability with which the input image belongs to each category scene; an unknown scene belonging rate specification unit that specifies an unknown scene belonging rate prescribing a probability with which the input image belongs to an unknown scene; a by-scene correction parameter memory unit that stores by-scene correction parameters; a correction parameter combination unit that computes a combined correction parameter that is the weighted average of the correction parameters using the plurality of scene belonging rates and the unknown scene belonging rate; and an image correction unit that performs image correction processing for the input image using the combined correction parameter.

    摘要翻译： 图像校正装置包括场景归属率计算单元，其从输入图像的特征值计算多个场景归属率，每个场景归属率规定输入图像属于每个类别场景的概率; 未知场景属性率指定单元，其指定输入图像属于未知场景的概率的未知场景归属率; 存储逐场校正参数的逐场校正参数存储单元; 校正参数组合单元，其使用所述多个场景归属率和所述未知场景归属率来计算作为所述校正参数的加权平均的组合校正参数; 以及图像校正单元，其使用组合校正参数对输入图像执行图像校正处理。