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公开(公告)号：US08151814B2
公开(公告)日：2012-04-10
申请号：US12353076
申请日：2009-01-13
申请人： Akira Shimizu , Akiko Kobayashi , Hiroki Kanayama
发明人： Akira Shimizu , Akiko Kobayashi , Hiroki Kanayama
IPC分类号： F17D1/17 , C23C16/448
CPC分类号： F17D1/16 , C23C16/45544 , C23C16/45561 , Y10T137/0396
摘要： A method for controlling flow and concentration of a liquid precursor includes: supplying a carrier gas to a first auto-pressure regulator and outputting therefrom the carrier gas at a first pressure to a precursor reservoir; outputting the mixture of the vaporized precursor and the carrier gas from the precursor reservoir; and supplying the mixture to a second auto-pressure regulator and outputting therefrom the mixture at a second pressure to a reactor via an orifice.
摘要翻译： 用于控制液体前体的流动和浓缩的方法包括：将载气供应到第一自动压力调节器，并将载体气体以第一压力从其输出到前体储存器; 从前体储存器输出蒸发的前体和载气的混合物; 以及将所述混合物供应到第二自动压力调节器，并且通过孔口将所述混合物以第二压力从所述反应器输出。
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公开(公告)号：US20100178423A1
公开(公告)日：2010-07-15
申请号：US12353076
申请日：2009-01-13
申请人： Akira Shimizu , Akiko Kobayashi , Hiroki Kanayama
发明人： Akira Shimizu , Akiko Kobayashi , Hiroki Kanayama
IPC分类号： C23C16/455 , F17D1/16
CPC分类号： F17D1/16 , C23C16/45544 , C23C16/45561 , Y10T137/0396
摘要： A method for controlling flow and concentration of a liquid precursor includes: supplying a carrier gas to a first auto-pressure regulator and outputting therefrom the carrier gas at a first pressure to a precursor reservoir; outputting the mixture of the vaporized precursor and the carrier gas from the precursor reservoir; and supplying the mixture to a second auto-pressure regulator and outputting therefrom the mixture at a second pressure to a reactor via an orifice.
摘要翻译： 用于控制液体前体的流动和浓缩的方法包括：将载气供应到第一自动压力调节器，并将载体气体以第一压力从其输出到前体储存器; 从前体储存器输出蒸发的前体和载气的混合物; 以及将所述混合物供应到第二自动压力调节器，并且通过孔口将所述混合物以第二压力从所述反应器输出。
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公开(公告)号：US07462245B2
公开(公告)日：2008-12-09
申请号：US10618900
申请日：2003-07-14
申请人： Akira Shimizu , Hideaki Fukuda , Hiroki Kanayama
发明人： Akira Shimizu , Hideaki Fukuda , Hiroki Kanayama
IPC分类号： C23C16/448 , C23C16/44 , C23C16/06
CPC分类号： C23C16/45565 , C23C16/4481 , C23C16/4557 , C23C16/52
摘要： A single-wafer-processing type CVD apparatus for forming a thin film on an object to be processed includes a reaction chamber, a susceptor for placing the object thereon, a shower plate for emitting a jet of reaction gas to the object, which is set up in parallel and opposing to the susceptor, an orifice for bringing a liquid raw material and a carrier gas into the reaction chamber, which is formed through the ceiling of the reaction chamber, an evaporation plate means for vaporizing the liquid raw material, which is set up in a space between the ceiling of the reaction chamber and the shower plate, and a temperature controlling mechanism for controlling the shower plate and the evaporation plate means at respective given temperatures.
摘要翻译： 用于在待处理物体上形成薄膜的单晶片加工型CVD装置包括反应室，用于放置物体的基座，用于向物体喷射反应气体喷射的喷淋板，其被设定 平行且相对于基座的孔，用于将液体原料和载气引入通过反应室顶部形成的反应室的孔，用于使液态原料蒸发的蒸发板装置 设置在反应室的顶板和喷淋板之间的空间中，以及用于在各自的给定温度下控制喷淋板和蒸发板装置的温度控制机构。
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公开(公告)号：US10378106B2
公开(公告)日：2019-08-13
申请号：US12618355
申请日：2009-11-13
摘要： A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.
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公开(公告)号：US08647722B2
公开(公告)日：2014-02-11
申请号：US12618419
申请日：2009-11-13
IPC分类号： H05H1/24
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/56
摘要： A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.
摘要翻译： 基于脉冲CVD或ALD的成膜循环重复多次以形成单层绝缘膜，而在上述过程中重整循环是每个成膜循环一次或多次，通过处理 使用已经被等离子体激活的处理气体形成膜。
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公开(公告)号：US20100136313A1
公开(公告)日：2010-06-03
申请号：US12326000
申请日：2008-12-01
申请人： Akira Shimizu , Akiko Kobayashi , Suvi Haukka
发明人： Akira Shimizu , Akiko Kobayashi , Suvi Haukka
CPC分类号： C23C16/34 , C01B33/00 , C23C16/45531
摘要： A process for forming metallic nitride film by atomic layer deposition (ALD), which comprises steps for feeding into a reaction space vapor phase alternated pulses of metal source material and silicon source material in a plurality of cycles, and feeding into the reaction space vapor phase pulses of nitrogen source material. wherein a nitrogen source pulse is fed intermittently in selected cycles such that a ratio of nitrogen source pulses to silicon source pulses is less than 1:1 and a ratio of nitrogen source pulses to metal source pulses is less than 1:1, the ratio selected to produce the thin film with a resistivity between 1,000 μΩcm and 15,000 μΩcm.
摘要翻译： 一种用于通过原子层沉积（ALD）形成金属氮化物膜的方法，包括以多个循环的方式将金属源材料和硅源材料的交替脉冲进入反应空间的步骤，并将其进料到反应空间气相 脉冲氮源材料。 其中氮源脉冲以选定的循环间歇地进给，使得氮源脉冲与硅源脉冲的比例小于1:1，并且氮源脉冲与金属源脉冲的比率小于1:1，选择的比率 以产生电阻率在1000μΩ-OHgr·cm和15000μ＆OHgr·cm之间的薄膜。
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公开(公告)号：US20100124618A1
公开(公告)日：2010-05-20
申请号：US12618419
申请日：2009-11-13
IPC分类号： B05D3/04
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/56
摘要： A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.
摘要翻译： 基于脉冲CVD或ALD的成膜循环重复多次以形成单层绝缘膜，而在上述过程中重整循环是每个成膜循环一次或多次，通过处理 使用已经被等离子体激活的处理气体形成膜。
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公开(公告)号：US20100124621A1
公开(公告)日：2010-05-20
申请号：US12618355
申请日：2009-11-13
IPC分类号： C23C16/48
CPC分类号： C23C16/402 , C23C16/325 , C23C16/345 , C23C16/45542 , C23C16/45553 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228
摘要： A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.
摘要翻译： 一种通过交替多次交替形成绝缘膜的方法，将前体吸附到基底上的方法和使用反应气体和等离子体处理吸附表面的方法，其中在提供前体的过程中施加等离子体 。
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公开(公告)号：US09109276B2
公开(公告)日：2015-08-18
申请号：US12885026
申请日：2010-09-17
申请人： Koichi Kanai , Kiyokazu Sugiyama , Eiji Shiotani , Kimio Nishimura , Junichi Uchiyama , Kiyohisa Suzuki , Jun Inomata , Daisuke Terada , Akira Shimizu , Hidenobu Matsuyama , Kiyoshi Hasegawa , Takashi Iiya
发明人： Koichi Kanai , Kiyokazu Sugiyama , Eiji Shiotani , Kimio Nishimura , Junichi Uchiyama , Kiyohisa Suzuki , Jun Inomata , Daisuke Terada , Akira Shimizu , Hidenobu Matsuyama , Kiyoshi Hasegawa , Takashi Iiya
CPC分类号： C23C4/124 , B05B7/224 , B05B13/0636 , C23C4/12 , C23C4/129 , C23C4/16 , C23C4/18 , F02F1/00 , F05C2253/12 , Y10T29/49272 , Y10T428/13
摘要： A cylindrical internal surface processing method comprises forming a cylinder bore, roughening an upper section of the bore, depositing coating onto the bore, and machining a lower section of the bore and the coating. The forming of the cylinder bore includes forming the upper and lower sections with the lower section being axially spaced from the upper section and having an axial length greater than zero. The roughening creates a roughened surface such that a radially innermost edge of the roughened surface has an internal diameter smaller than an internal diameter of the lower section. The coating is deposited to cover the upper section and at least a portion of the lower section. The machining forms a tapered portion and a cylindrical portion, a radially outermost edge of the cylindrical portion having an internal diameter larger than that of a radially outermost edge of the roughened surface.
摘要翻译： 圆柱形内表面处理方法包括形成气缸孔，使孔的上部部分粗糙化，在孔上沉积涂层，以及加工孔的下部和涂层。 缸孔的形成包括形成上部和下部，其中下部与上部轴向间隔开并具有大于零的轴向长度。 粗糙化产生粗糙表面，使得粗糙表面的径向最内边缘具有小于下部内径的内径。 沉积涂层以覆盖上部和下部的至少一部分。 加工形成锥形部分和圆柱形部分，圆柱形部分的径向最外边缘的内径大于粗糙表面的径向最外边缘的内径。
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10.发明申请公开(公告)号：US20150169591A1
公开(公告)日：2015-06-18
申请号：US14402878
申请日：2012-05-24
申请人： Michiko Yoshida , Akira Shimizu , Seisuke Tokuda , Kazuhiko Mogi , Shinji Fujiwara , Nobuo Kawamura , Masaru Kitsuregawa , Kazuo Goda
发明人： Michiko Yoshida , Akira Shimizu , Seisuke Tokuda , Kazuhiko Mogi , Shinji Fujiwara , Nobuo Kawamura , Masaru Kitsuregawa , Kazuo Goda
IPC分类号： G06F17/30
CPC分类号： G06F16/252 , G06F16/24532 , G06F16/2455 , G06F16/24569
摘要： A database management system (DBMS) manages a database existing in a second storage device with an access speed lower than that of a first storage device. In an execution of a query, the DBMS dynamically generates tasks two or more executable tasks in parallel. The DBMS generates task start information which is information representing a content of the execution of the task, manages the task start information, and executes a content represented by the task start information by the task. The task start information includes a data address set existing in the second storage device. The DBMS controls movement of the data address sets between the first storage device and the second storage device based on a management state of the task start information. In addition, the DBMS selects the task start information based on whether or not the data address set exists in the first storage device.
摘要翻译： 数据库管理系统（DBMS）以比第一存储设备低的访问速度来管理第二存储设备中存在的数据库。 在执行查询时，DBMS并行动态生成任务两个或多个可执行任务。 DBMS生成作为任务执行内容的信息的任务开始信息，管理该任务开始信息，并执行任务开始信息所表示的内容。 任务开始信息包括存在于第二存储装置中的数据地址集。 DBMS基于任务开始信息的管理状态，控制第一存储装置与第二存储装置之间的数据地址集的移动。 另外，DBMS根据第一存储装置中是否存在数据地址组来选择任务开始信息。
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