公开(公告)号：US4617192A

公开(公告)日：1986-10-14

申请号：US707173

申请日：1985-02-28

申请人： Aland K. Chin ,  Shobha Singh ,  LeGrand G. V. Uitert ,  George J. Zydzik

发明人： Aland K. Chin ,  Shobha Singh ,  LeGrand G. V. Uitert ,  George J. Zydzik

IPC分类号： H01L21/316 ,  H01L31/0216 ,  H01L31/105 ,  H01L33/00 ,  H01L33/44 ,  B05D3/06 ,  B05D5/06

CPC分类号： H01L33/44 ,  H01L21/02178 ,  H01L21/02269 ,  H01L21/31616 ,  H01L31/02161 ,  H01L31/105 ,  H01L33/0025

摘要： The invention is a process for putting down coatings of aluminum oxide on optical surfaces using electron-beam deposition in an oxygen-enriched atmosphere. Particularly good results are obtained when oxygen is flowed over or directed at the surface to be coated. Such coatings have extremely low losses compared to many conventional optical coatings and are particularly useful for anti-reflection coatings on various devices. In particular, for optical devices with indium phosphide surfaces operating at wavelengths near 1.3 .mu.m, the optical properties of aluminum oxide coatings are near optimum for anti-reflection coatings and the thermal expansion characteristics are a close match to those of indium phosphide.

摘要翻译： 本发明是在富氧气氛中使用电子束沉积将氧化铝涂层放在光学表面上的方法。 当氧气流过或指向待涂覆的表面时，可获得特别好的结果。 与许多常规光学涂层相比，这种涂层具有极低的损耗，并且特别适用于各种装置上的抗反射涂层。 特别地，对于磷化铟表面在1.3μm附近工作的光学器件，氧化铝涂层的光学性能对于抗反射涂层来说是接近最佳的，并且热膨胀特性与磷化铟接近。

公开(公告)号：US4634474A

公开(公告)日：1987-01-06

申请号：US658569

申请日：1984-10-09

申请人： Irfan Camlibel ,  Aland K. Chin ,  Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

发明人： Irfan Camlibel ,  Aland K. Chin ,  Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

IPC分类号： H01L21/22 ,  H01L21/314 ,  H01L21/324 ,  H01L21/471 ,  H01L21/477 ,  H01L23/28 ,  H01L21/223 ,  H01L21/383

CPC分类号： H01L21/314 ,  H01L21/3245 ,  H01L21/471 ,  H01L23/28 ,  H01L2924/0002 ,  Y10S438/902 ,  Y10S438/945

摘要： Proposed is a method of fabricating III-V and II-VI compound semiconductors and a resulting product where there is formed on the surface a coating which can function as a diffusion mask and/or a passivation layer. The coating is a silicon layer deposited by a method which does not damage the semiconductor surface.

摘要翻译： 提出了制造III-V和II-VI化合物半导体的方法以及在表面上形成可用作扩散掩模和/或钝化层的涂层的产物。 涂层是通过不破坏半导体表面的方法沉积的硅层。

公开(公告)号：US4502898A

公开(公告)日：1985-03-05

申请号：US563701

申请日：1983-12-21

申请人： Irfan Camlibel ,  Howard J. Guggenheim ,  Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

发明人： Irfan Camlibel ,  Howard J. Guggenheim ,  Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

IPC分类号： H01L31/107 ,  H01L21/22 ,  H01L21/225 ,  H01L31/10 ,  H01L33/00 ,  H01S5/00 ,  H01L21/20

CPC分类号： H01L21/2258 ,  Y10S252/95

摘要： A process is described for doping compound semiconductors using a metal fluoride (e.g., ZnF.sub.2) as the source of dopant. The anhydrous metal fluoride is put down on the surface of the compound semiconductor, capped with a suitable encapsulant and heat treated to promote the diffusion. The heat treatment can be carried out in air without danger of surface damage to the compound semiconductor. Also, the diffusion is better controlled as to depth of diffusion and boundary delineation.

摘要翻译： 描述了使用金属氟化物（例如ZnF 2）作为掺杂剂源掺杂化合物半导体的方法。 将无水金属氟化物放在化合物半导体的表面上，盖上适当的密封剂并进行热处理以促进扩散。 热处理可以在空气中进行，而没有对化合物半导体的表面损伤的危险。 此外，扩散更好地控制扩散深度和边界描绘。

公开(公告)号：US4309460A

公开(公告)日：1982-01-05

申请号：US196477

申请日：1980-10-14

申请人： Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

发明人： Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

IPC分类号： C23C14/06 ,  C23C14/14 ,  B05D3/02

CPC分类号： C23C14/0694 ,  C23C14/14

摘要： A process is described for producing devices and articles with gold films made by gold evaporation in which certain fluoride compounds are used to insure good adhesion of the gold film to the substrate. The process is particularly applicable to the production of gold films on non-metallic surfaces such as ceramic and glass surfaces. This procedure not only insures better adhesion of the gold film to the surface, but also permits greater processing variations without adversely affecting film adhesion.

摘要翻译： 描述了一种用于制造具有通过金蒸发制成的金膜的装置和制品的方法，其中使用某些氟化物化合物来确保金膜与基底的良好粘附。 该方法特别适用于在非金属表面如陶瓷和玻璃表面上生产金膜。 该方法不仅确保了金膜对表面的更好的附着力，而且还允许更大的加工变化，而不会不利地影响膜的粘附。

公开(公告)号：US4187530A

公开(公告)日：1980-02-05

申请号：US911338

申请日：1978-06-01

申请人： Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

发明人： Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

IPC分类号： H01L45/00 ,  H01G9/00

CPC分类号： H01L45/00

摘要： Certain structures are described for solid state electrical switches which employ electrochromic material. These structures involve use of a common base contact for both switching and readout circuits. The structures are particularly easy to fabricate using integrated circuit techniques and exhibit reduced electrical shorts due to reduced migration of metallic ions.

摘要翻译： 描述了采用电致变色材料的固态电气开关的某些结构。 这些结构涉及为开关和读出电路使用公共基极触点。 使用集成电路技术，这些结构特别容易制造，并且由于金属离子的迁移减少而表现出减少的电短路。

公开(公告)号：US4146309A

公开(公告)日：1979-03-27

申请号：US885446

申请日：1978-03-10

申请人： Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

发明人： Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

IPC分类号： C23C14/06 ,  C23C14/18 ,  G02F1/153 ,  G02F1/17

CPC分类号： G02F1/1533 ,  C23C14/0694 ,  C23C14/18 ,  Y10S428/917

摘要： A process is described for producing devices with gold films on surfaces composed of certain inorganic fluoride compounds. An adhesion compound such as lead fluoride, cadmium fluoride or tin fluoride or mixtures of these compounds is interspersed between inorganic fluoride surface and gold film. This process is particularly attractive for the fabrication of electrochromic display devices and solid-state switches. This procedure insures good adhesion of gold film to inorganic fluoride and insures high reliability in the manufacture of such devices. In addition, electrodes made in accordance with the invention have highly desirable electrical characteristics including ohmic resistance characteristics and low electrode resistances.

摘要翻译： 描述了用于在由某些无机氟化物组成的表面上制造具有金膜的装置的方法。 诸如氟化铅，氟化镉或氟化锡之类的粘附化合物或这些化合物的混合物分散在无机氟化物表面和金膜之间。 该方法对于电致变色显示装置和固态开关的制造特别有吸引力。 该方法确保了金膜与无机氟化物的良好粘合性，并确保了在这种装置的制造中的高可靠性。 此外，根据本发明制造的电极具有包括欧姆电阻特性和低电极电阻的非常期望的电特性。

公开(公告)号：US4240717A

公开(公告)日：1980-12-23

申请号：US972706

申请日：1978-12-26

申请人： Irfan Camlibel ,  Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

发明人： Irfan Camlibel ,  Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

IPC分类号： G02F1/15 ,  G02F1/29

CPC分类号： G02F1/1506

摘要： An electrodeposition display device is described which uses an electrolyte containing silver species and certain anion species including iodide bromide or chloride. The electrolyte also contains a substituted ammonium halide such as tetrabutyl ammonium iodide. Such display devices have high contrast, large viewing angle and rapid redissolution of the display.

摘要翻译： 描述了一种电沉积显示装置，其使用含有银物质和某些阴离子物质的包含碘化物溴化物或氯化物的电解质。 电解质还含有取代的卤化铵如四丁基碘化铵。 这种显示装置具有高对比度，大视角和显示器的快速再溶解。

公开(公告)号：US5047369A

公开(公告)日：1991-09-10

申请号：US345924

申请日：1989-05-01

申请人： Debra A. Fleming ,  David W. Johnson, Jr. ,  Shobha Singh ,  LeGrand G. VanUitert ,  George J. Zydzik

发明人： Debra A. Fleming ,  David W. Johnson, Jr. ,  Shobha Singh ,  LeGrand G. VanUitert ,  George J. Zydzik

IPC分类号： C03C3/062 ,  C03C3/097 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/02129 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31625 ,  Y10S148/133 ,  Y10S438/902

摘要： This invention is directed to a process of producing semiconductor devices which involves deposition of protective glass layers by a particle beam technique from targets of phosphosilicate glass, as well as a process for production of such targets. The phosphosilicate glass containing 1-15 mole percent P.sub.2 O.sub.5 is produced by a sol/gel technique which involves mixing of a fumed silica, with a surface area of 50-400 m.sup.2 /g, preferably about 200 m.sup.2 /g, with phosphoric acid and water to form a sol with 20-55 wt. % silica, allowing it to gel, drying at ambient conditions, dehydrating at about 650.degree. C. in an atmosphere of an inert gas and chlorine and fluorine containing gases, heating up at a certain rate of from 100.degree. to 180.degree. C. per hour to a peak sintering temperature below 1200.degree. C. and cooling so as to produce amorphous and transparent glass suitable for use as a target. The glass layers are highly advantageous as encapsulating layers, diffusion barrier layers, etc., especially for optical type and semiconductor devices. Production of the phosphosilicate glass by the sol/gel technique is highly advantageous over the conventional melting technique, being faster and much less expensive than the latter.

公开(公告)号：US5011794A

公开(公告)日：1991-04-30

申请号：US345923

申请日：1989-05-01

申请人： Karen A. Grim ,  Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

发明人： Karen A. Grim ,  Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

IPC分类号： H01L21/26 ,  H01L21/00 ,  H01L21/265 ,  H01L21/324

CPC分类号： H01L21/67115 ,  H01L21/3245 ,  Y10S148/003 ,  Y10S148/071

摘要： This invention is directed to the fabrication of semiconductor devices, especially those comprising III-V and II-VI compound semiconductor materials, and involves Rapid Thermal Annealing (RTA) of semiconductor wafers, especially those implanted with a dopant(s). The invention is also concerned with a black-box implement used in combination with the RTA. The process includes enclosing a wafer to be annealed within a "black-box" comprising components of a black body material and subjecting the black box with the wafer therein to an RTA. In a preferred embodiment the RTA comprises (a) a pre-anneal step which includes heating to a temperature and for a period sufficient to preheat the wafer so as to reduce thermal shock due to a main annealing step, (b) the main annealing step being at a temperature and for a period sufficient to remove damage caused to said surface by the dopant implantation and to activate implanted dopant, and (c) a post-anneal step carried out at a temperature and for a period sufficient to relieve stresses which may result from the main-annealing step. The combined use of the RTA and the black box leads to wafers substantially free or slip lines and with reproducibly high mobilities and uniform activation.

公开(公告)号：US4731293A

公开(公告)日：1988-03-15

申请号：US876442

申请日：1986-06-20

申请人： David T. Ekholm ,  William H. Grodkiewicz ,  Bertram Schwartz ,  Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

发明人： David T. Ekholm ,  William H. Grodkiewicz ,  Bertram Schwartz ,  Shobha Singh ,  LeGrand G. Van Uitert ,  George J. Zydzik

IPC分类号： C23C14/08 ,  C03B8/04 ,  C03C3/097 ,  C23C14/10 ,  C23C14/24 ,  C23C14/30 ,  C23C14/34 ,  G02B1/10 ,  H01L21/203 ,  H01L21/285 ,  H01L21/316 ,  B32B17/06

CPC分类号： H01L21/02129 ,  C03C3/097 ,  C23C14/10 ,  G02B1/105 ,  H01L21/02266

摘要： A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering or e-beam bombardment) of a phosphorus-containing silicate glass target. Devices with such layers are also described. Such glass layers are highly advantageous as encapsulating material, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc.

摘要翻译： 描述了一种制造技术，用于制造其中使用一种类型的玻璃作为表面保护层的各种装置。 通过含磷硅酸盐玻璃靶的粒子轰击（通常是溅射或电子束轰击）来放下玻璃层。 还描述了具有这些层的装置。 这样的玻璃层作为封装材料，扩散阻挡层等是非常有利的，特别是对于光学类型器件和某些半导体器件。 特别重要的是用于轰击过程中的玻璃靶的制备方法。 玻璃层是湿气稳定的，作为阻止扩散的优良屏障，并且可以在相当高的温度下使用，而不会开裂或剥落。 玻璃层还可以长期保护大气成分，包括水蒸气，氧气，大气污染物等。