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公开(公告)号：US20210273132A1
公开(公告)日：2021-09-02
申请号：US17253223
申请日：2019-06-19
申请人： Aledia
摘要： An optoelectronic device including an array of axial diodes, each diode forming a resonant cavity having a standing electromagnetic wave forming therein, each light-emitting diode including an active area located substantially at the level of an extremum of the electromagnetic wave, the array forming a photonic crystal configured to maximize the intensity of the electromagnetic radiation supplied by the diode array.
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公开(公告)号：US11677049B2
公开(公告)日：2023-06-13
申请号：US16626277
申请日：2018-06-08
申请人： Aledia
发明人： Tiphaine Dupont
IPC分类号： H01L33/50 , H01L25/075 , H01L33/60 , G02B1/00 , G02B6/122
CPC分类号： H01L33/504 , G02B1/005 , H01L25/0753 , H01L33/50 , H01L33/60 , G02B6/1225 , H01L2933/0041 , H01L2933/0058 , H01L2933/0083
摘要： An optoelectronic device, including: light-emitting sources, each light-emitting source being capable of emitting a first radiation at a first wavelength; photoluminescent blocks distributed into first photo-luminescent blocks capable of converting by optical pumping the first radiation into a second radiation at a second wavelength and second photoluminescent blocks capable of converting by optical pumping the first radiation into a third radiation at a third wavelength; and for each photoluminescent block, an optical coupler including a first photonic crystal at least partially surrounding the photoluminescent block and covering, with the photo-luminescent block, one of the light-emitting sources next to the photoluminescent block, the optical coupler being capable of modifying the propagation direction of rays of the first radiation emitted by the light-emitting source to redirect the rays towards the photoluminescent block.
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公开(公告)号：US20230024644A1
公开(公告)日：2023-01-26
申请号：US17787907
申请日：2020-12-22
申请人： Aledia
发明人： Tiphaine Dupont
IPC分类号： B23K26/18 , B23K26/57 , B23K26/064
摘要： A device configured for a laser treatment, including a support and objects, each attached to the support via a region absorbing for the laser, the support comprising a system for optically guiding (42, 44, 50, 52) the laser towards at least a plurality of said absorbing regions.
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公开(公告)号：US20220140182A9
公开(公告)日：2022-05-05
申请号：US17253223
申请日：2019-06-19
申请人： Aledia
摘要： An optoelectronic device including an array of axial diodes, each diode forming a resonant cavity having a standing electromagnetic wave forming therein, each light-emitting diode including an active area located substantially at the level of an extremum of the electromagnetic wave, the array forming a photonic crystal configured to maximize the intensity of the electromagnetic radiation supplied by the diode array.
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公开(公告)号：US20240321843A1
公开(公告)日：2024-09-26
申请号：US18676771
申请日：2024-05-29
申请人： Aledia
摘要： An optoelectronic device including a support including a face; light-emitting diodes lying on the face and including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 μm and 30 μm, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.
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公开(公告)号：US20230035764A1
公开(公告)日：2023-02-02
申请号：US17788259
申请日：2020-12-18
申请人： Aledia
IPC分类号： B23K26/18 , B23K26/322
摘要： A device configured for a laser treatment including a substrate transparent for the laser and objects, each object being bonded to the substrate via a photonic crystal.
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公开(公告)号：US10418506B2
公开(公告)日：2019-09-17
申请号：US15758721
申请日：2016-09-09
申请人： Aledia
发明人： Tiphaine Dupont , Erwan Dornel
IPC分类号： H01L31/173 , H01L31/16 , H01L31/167 , H01L25/16 , H01L33/08 , H01L33/18 , H01L27/146 , H01L27/15
摘要： A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.
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公开(公告)号：US10177288B2
公开(公告)日：2019-01-08
申请号：US15933135
申请日：2018-03-22
申请人： Aledia
发明人： Tiphaine Dupont , Yohan Desieres
IPC分类号： H01L33/00 , H01L33/56 , H01L33/54 , H01L33/52 , H01L33/08 , H01L33/24 , H01L27/15 , H01L33/32 , H01L25/075 , H01L33/06 , H01L33/14 , H01L33/20 , H01L33/42 , H01L33/46 , H01L33/58 , H01L33/44
摘要： An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.
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公开(公告)号：US20180261584A1
公开(公告)日：2018-09-13
申请号：US15758721
申请日：2016-09-09
申请人： Aledia
发明人： Tiphaine Dupont , Erwan Dornel
IPC分类号： H01L25/16 , H01L31/173 , H01L33/08 , H01L33/18 , H01L27/146
CPC分类号： H01L31/173 , H01L25/167 , H01L27/14643 , H01L27/156 , H01L31/16 , H01L31/165 , H01L31/167 , H01L33/08 , H01L33/18
摘要： A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.
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公开(公告)号：US12027505B2
公开(公告)日：2024-07-02
申请号：US17287087
申请日：2019-10-18
申请人： Aledia
摘要： An optoelectronic device including a support including a face; light-emitting diodes lying on the face and comprising including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 μm and 30 μm, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.
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