Semiconductor layer structure comprising a cavity layer and method for fabricating the semiconductor layer structure
    3.
    发明授权
    Semiconductor layer structure comprising a cavity layer and method for fabricating the semiconductor layer structure 有权
    包括空腔层的半导体层结构和用于制造半导体层结构的方法

    公开(公告)号:US08829532B2

    公开(公告)日:2014-09-09

    申请号:US11702011

    申请日:2007-02-02

    摘要: Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

    摘要翻译: 提供半导体层结构和制造结构的方法,包括由半导体材料制成的基板,在其上设置由第二半导体材料制成的层,此外还包括富含杂质原子的区域(3),该区域位于 在层(2)中或在层(2)和衬底(1)之间的界面下方的特定深度处,另外在区域(3)内富含杂质原子的层(4),该层包括通过离子注入产生的空穴, 此外,施加到层(2)的至少一个外延层(6)还包括在包括空腔的层(4)内的位错和层叠缺陷的缺陷区域(5),所述至少一个外延层(6) 所述至少一个外延层(6)的残余应变小于或等于1GPa。

    Method for the production of a semiconductor structure
    5.
    发明授权
    Method for the production of a semiconductor structure 有权
    制造半导体结构的方法

    公开(公告)号:US08492243B2

    公开(公告)日:2013-07-23

    申请号:US12863506

    申请日:2009-01-21

    IPC分类号: H01L21/30

    摘要: Semiconductor structures are produced by providing a 3C—SiC semiconductor layer containing a monocrystalline 3C—SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity ≧80% or being substantially transparent.

    摘要翻译: 通过在第一硅衬底上通过在硅中注入碳来提供包含单晶3C-SiC层的3C-SiC半导体层来制造半导体结构,并将适于产生光电子部件的氮化物半导体外延层施加到3C- SiC半导体层结构,其中氮化物半导体的外延层通过将氮化物层粘合到第二衬底表面上并机械地或化学地去除硅和含有SiC的层而转移到第二衬底上,第二衬底是具有反射率> 80%或基本透明。

    PHOTOVOLTAIC MODULES MANUFACTUERD USING MONOLITHIC MODULE ASSEMBLY TECHNIQUES
    7.
    发明申请
    PHOTOVOLTAIC MODULES MANUFACTUERD USING MONOLITHIC MODULE ASSEMBLY TECHNIQUES 审中-公开
    使用单片模块组装技术的光伏模块制造

    公开(公告)号:US20120167986A1

    公开(公告)日:2012-07-05

    申请号:US13419250

    申请日:2012-03-13

    IPC分类号: H01L31/05

    摘要: Photovoltaic modules comprising back-contact solar cells manufactured using monolithic module assembly techniques comprising a flexible circuit comprising a back sheet and a patterned metallization. The module may comprise busses in electrical contact with the patterned metallization to extract the current. The module may alternatively comprise multilevel metallizations. Interlayer dielectric comprising islands or dots relieves stresses due to thermal mismatch. The use of multiple cord plates enables flexible circuit layouts, thus optimizing the module. The modules preferably comprise a thermoplastic encapsulant and/or hybrid adhesive/solder materials. An ultrathin moisture barrier enables roll-to-roll processing.

    摘要翻译: 包括使用整体模块组装技术制造的背接触式太阳能电池的光伏模块,该技术包括包含背板和图案化金属化的柔性电路。 模块可以包括与图案化的金属化物电接触以提取电流的母线。 该模块可以替代地包括多层金属化。 包含岛或点的层间电介质减轻了由于热失配引起的应力。 使用多个电缆板可实现灵活的电路布局,从而优化模块。 模块优选地包括热塑性密封剂和/或混合粘合剂/焊料材料。 超薄防潮屏障可实现卷对卷加工。

    METHODS, DEVICES, AND SYSTEMS FOR FLUID MIXING AND CHIP INTERFACE
    10.
    发明申请
    METHODS, DEVICES, AND SYSTEMS FOR FLUID MIXING AND CHIP INTERFACE 有权
    用于流体混合和芯片接口的方法,装置和系统

    公开(公告)号:US20120058571A1

    公开(公告)日:2012-03-08

    申请号:US13222450

    申请日:2011-08-31

    IPC分类号: G01N1/00 B01L3/02

    摘要: In one aspect, the present invention provides methods, devices, and systems for ensuring that multiple components of a mixture are fully mixed in a continuous flow microfluidic system while ensuring that mixing between segments flowing through the chip is minimized. In some embodiments, the present invention includes mixing fluids in a droplet maintained at the tip of a pipette before the mixture is introduced to the microfluidic device. In another aspect, the present invention provides a pipette tip having a ratio of an outside diameter to an inside diameter that provides sufficient surface area for a droplet comprising up to the entire volume of the liquid to suspend from the pipette tip intact. In yet another aspect, the present invention provides methods, devices, and systems for delivering a reaction mixture to a microfluidic chip comprising a docking receptacle, an access tube and a reservoir.

    摘要翻译: 一方面,本发明提供用于确保混合物的多个组分在连续流微流体系统中完全混合的方法,装置和系统,同时确保流过芯片的区段之间的混合最小化。 在一些实施方案中,本发明包括在将混合物引入微流体装置之前将保持在移液管尖端的液滴混合流体。 在另一方面,本发明提供了一种移液管尖端,其具有外径与内径之比,其为包含液体的整个体积的液滴提供足够的表面面积,从而完全悬浮于移液管尖端。 在另一方面,本发明提供用于将反应混合物输送到微流控芯片的方法,装置和系统,所述微流控芯片包括对接插座,进入管和储存器。