公开(公告)号：US5212754A

公开(公告)日：1993-05-18

申请号：US815296

申请日：1991-12-27

申请人： Nagesh R. Basavanhally ,  D. Bruce Buchholz ,  Anthony F. J. Levi ,  Ronald A. Nordin

发明人： Nagesh R. Basavanhally ,  D. Bruce Buchholz ,  Anthony F. J. Levi ,  Ronald A. Nordin

IPC分类号： G02B6/38 ,  G02B6/42 ,  H01S5/022 ,  H01S5/40

CPC分类号： G02B6/4249 ,  G02B6/3885 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/4031

摘要： Connector apparatus for coupling an optical fiber cable with laser devices. The apparatus comprises a receptacle terminating aligned fibers of the optical cable in a planar surface perpendicular to a central axis of the receptacle. A plug mounts a plurality of laser devices each having an electrical terminal for connecting a laser device to an external source and an optical terminal aligned in a planar surface perpendicular to a central axis of the plug with each optical terminal positioned to correspond with one of the receptacle fibers. The plug slidably engages the receptacle and is affixed thereto to position the receptacle planar surface adjacent to and aligned with the plug planar surface to optically couple each laser device with a corresponding fiber of the optical cable.

摘要翻译： 用于将光纤电缆与激光装置连接的连接器装置。 该装置包括一个插座，该插座在垂直于插座中心轴的平面上终止光缆的对准光纤。 插头安装多个激光装置，每个激光装置具有用于将激光装置连接到外部源的电端子和与垂直于插头的中心轴线的平面垂直的光学终端，每个光学终端被定位成与 插座纤维。 插头可滑动地接合插座并且被固定到其上以将插座平面表面定位成与插头平面相邻并对准插头平面，以将每个激光装置与光缆的相应光纤光学耦合。

公开(公告)号：US5206524A

公开(公告)日：1993-04-27

申请号：US721913

申请日：1991-06-20

申请人： Young-Kai Chen ,  Anthony F. J. Levi ,  Richard N. Nottenburg ,  Morton Panish

发明人： Young-Kai Chen ,  Anthony F. J. Levi ,  Richard N. Nottenburg ,  Morton Panish

IPC分类号： H01L29/08 ,  H01L29/205 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L29/0895 ,  H01L29/205

摘要： Improved heterojunction bipolar transistor (HBT) are disclosed. Inventive devices can attain high cut-off frequency (f.sub.T), exemplarily 80 GHz or higher, and high DC current gain (.beta.), exemplarily 25 or higher. The devices exhibit lateral scaling, permitting reduction in emitter stripe width without unacceptable decrease in .beta.. Exemplarily the stripe width is 1 .mu.m or less. The inventive HBTs are hot electron devices, with the hot electrons in the base region being spatially confined such that relatively few electrons reach the surface of the extrinsic base region. The relatively low bulk and surface recombination rate in the base of inventive HBTs is an important aspect of the invention and makes possible devices having relatively high .beta. and low power consumption. Appropriate choice of base material, namely, a semiconductor material having relatively low intrinsic surface recombination velocity, can result in further reduction of surface recombination, as can, for instance, the use of an appropriate non-alloyed metal base contact. Appropriate choice of collector material can result in improved ballistic transport through the collector depletion region, and novel selection criteria are disclosed. InP, InAs, and In.sub.0.53 Ga.sub.0.47 As are exemplary materials that meet these criteria. Use of a highly doped collector contact region, with dopant level within a relatively narrow concentration range, can also lead to improved device behavior, as can the use of a compound emitter that comprises one or more appropriately placed thin undoped heteroepitaxial layers.

摘要翻译： 公开了改进的异质结双极晶体管（HBT）。 本发明的器件可以获得例如80GHz或更高的高截止频率（fT）和高直流电流增益（β），示例性地为25或更高。 这些器件表现出横向缩放，允许发射极条宽度的减小，而β不会有不可接受的降低。 条纹宽度为1μm以下。 本发明的HBT是热电子器件，其中基极区中的热电子被空间限制，使得相对少的电子到达外部基极区域的表面。 本发明HBT的基底中相对较低的体积和表面复合速率是本发明的重要方面，并使得可能的器件具有相对较高的β和低功耗。 基本材料的适当选择，即具有相对低的固有表面复合速度的半导体材料可以导致表面复合的进一步减少，例如可以使用合适的非合金金属基底接触。 收集器材料的适当选择可以导致通过集电极耗尽区的改进的弹道输送，并且公开了新的选择标准。 InP，InAs和In0.53Ga0.47A是满足这些标准的示例性材料。 使用具有相对窄的浓度范围内的掺杂剂水平的高度掺杂的集电极接触区域也可以导致改进的器件特性，使用包括一个或多个适当放置的未掺杂异质外延层的复合发射极也是如此。

公开(公告)号：US4926221A

公开(公告)日：1990-05-15

申请号：US403003

申请日：1989-09-07

申请人： Anthony F. J. Levi

发明人： Anthony F. J. Levi

IPC分类号： H01L29/36 ,  H01L29/737

CPC分类号： H01L29/365 ,  H01L29/7371 ,  H01L29/7373

摘要： A hot electron transistor (HET) comprising features that can result in substantially improved device characteristics is disclosed. Among the features is a highly doped (typically more than about 10.sup.20 cm.sup.-3) thin base region, a thin (typically less than about 100 nm) collector depletion region, and a highly doped (typically more than about 10.sup.19 cm.sup.-3) collector contact region. Ballistic transport through the base region is possible, despite the high doping level, because the inelastic scattering rate can be relatively low in at least some highly doped compound semiconductors such as GaAs, AlGaAs, InGaAs, or InP. The elastic scattering rate in the base region can be relatively low if the dopant atoms have an appropriate non-random distribution. Techniques for achieving such a distribution are disclosed. Transistors according to the invention are expected to find advantageous use in applications that demand high speed, e.g., in repeaters in high capacity optical fiber transmission systems.

摘要翻译： 公开了一种包括可导致显着改善的器件特性的特征的热电子晶体管（HET）。 特征之一是高掺杂（通常大于约1020cm -3）的薄基区，薄（通常小于约100nm）的集电极耗尽区，以及高掺杂（通常大于约1019cm-3）的集电极 接触区域 尽管掺杂水平高，但是由于在至少一些高掺杂的化合物半导体（例如GaAs，AlGaAs，InGaAs或InP）中非弹性散射速率可以相对较低，所以可以通过基极区域的弹道传输。 如果掺杂剂原子具有适当的非随机分布，则基区中的弹性散射速率可以相对较低。 公开了实现这种分配的技术。 期望根据本发明的晶体管在需要高速的应用中发现有利的用途，例如在大容量光纤传输系统中的中继器中。

公开(公告)号：US06871025B2

公开(公告)日：2005-03-22

申请号：US09883085

申请日：2001-06-15

申请人： Lute Maleki ,  Anthony F. J. Levi

发明人： Lute Maleki ,  Anthony F. J. Levi

IPC分类号： G02F1/01 ,  G02F1/17 ,  H01S3/083 ,  H01S5/10 ,  H04B10/02 ,  H04B10/04 ,  H04B10/06 ,  H04B10/142 ,  H04B10/152 ,  H04B10/28 ,  G02B6/26

CPC分类号： G02F1/011 ,  G02F1/0121 ,  G02F1/17 ,  G02F2201/17 ,  G02F2202/06 ,  G02F2203/15 ,  H01S3/083 ,  H01S5/1075

摘要： Techniques for directly converting an electrical signal into an optical signal by using a whispering gallery mode optical resonator formed of a dielectric material that allows for direct modulation of optical absorption by the electrical signal.

摘要翻译： 通过使用由允许通过电信号直接调制光吸收的电介质材料形成的耳语画廊模式光学谐振器将电信号直接转换成光信号的技术。

公开(公告)号：US5012319A

公开(公告)日：1991-04-30

申请号：US523093

申请日：1990-05-14

申请人： Douglas R. Dykaar ,  Anthony F. J. Levi

发明人： Douglas R. Dykaar ,  Anthony F. J. Levi

IPC分类号： H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04 ,  H01L39/02 ,  H01P3/02 ,  H01P3/08 ,  H01P11/00

CPC分类号： H01L23/53285 ,  H01L23/5221 ,  H01L2924/0002 ,  Y10S505/703 ,  Y10S505/873

摘要： Integrated electronic assemblies according to the invention, typically semiconductor IC chips, comprise an air gap transmission line. The line has high propagation speed and low dispersion, and can be readily manufactured. Various embodiments of the inventive transmission line are disclosed. In all cases the semiconductor substrate is etched so as to remove at least a substantial portion of the semiconductor material under and/or adjacent to the conductor line or lines. Insulator material (e.g., SiO.sub.2) serves, inter alia, to support the conductor.

公开(公告)号：US5148504A

公开(公告)日：1992-09-15

申请号：US777888

申请日：1991-10-16

申请人： Anthony F. J. Levi ,  Samuel L. McCall ,  Richart E. Slusher

发明人： Anthony F. J. Levi ,  Samuel L. McCall ,  Richart E. Slusher

IPC分类号： G02F1/00 ,  G02B6/122 ,  G02B6/26 ,  G02B6/43 ,  G02F1/01 ,  H01L27/15 ,  H01S5/026 ,  H01S5/10 ,  H01S5/125 ,  H01S5/183

CPC分类号： G02B6/43 ,  G02B6/122 ,  G02B6/262 ,  H01S5/026 ,  H01S5/1042 ,  H01S5/125 ,  H01S5/183

摘要： Optical integrated circuitry, performing various of the functions associated with electronic integrated circuitry, is disclosed. Fabrication, importantly to achieve high circuit chip density--typically in the range of 10.sup.6 as including both devices and interconnecting guides--is dependent upon device/spacing dimension miniaturization resulting from fabrication in very thin layers. Typical layer thickness as retained in fabricated devices and guides, of a maximum of the order of a 1/2 wavelength for relevant photon flux, results in limitation in cross-talk to permit device design rules of one or a few wavelengths.

公开(公告)号：US4829343A

公开(公告)日：1989-05-09

申请号：US74127

申请日：1987-07-17

申请人： Anthony F. J. Levi

发明人： Anthony F. J. Levi

IPC分类号： H01L29/68 ,  H01L29/15 ,  H01L29/201 ,  H01L29/205 ,  H01L29/737 ,  H01L29/76

CPC分类号： H01L29/7378 ,  H01L29/155 ,  H01L29/201 ,  H01L29/205 ,  H01L29/7371 ,  H01L29/7606

摘要： An improved compound semiconductor hot electron transistor (HET) having room temperature current gain .beta.>10 is disclosed. Disclosed are also means by which improved HET performance can be obtained. Among these means is choice of the base layer material such that the hot electrons injected into the base have k.sub.i,2 /k.sub.i,1 >0.2, where k.sub.i,1 and k.sub.i,2 are the components of the electron wave vector respectively normal and parallel to the emitter/base interface. A further means is choice of collector material such that the hot electron velocity component normal to the base/collector interface remains relatively unchanged upon passage of the hot electron through the base/collector interface. For instance, an appropriate superlattice in the collector region may be used to achieve such matching. Causing quantization of the ambient charge carrier states in the base can reduce hot electron scattering in the base. In bipolar HETs such scattering can also be reduced if the effective heavy hole mass in the base is much larger (e.g.,.times.10) than the effective electron mass in the forward direction. A strained base layer may be used to achieve this.

公开(公告)号：US06473218B1

公开(公告)日：2002-10-29

申请号：US09591866

申请日：2000-06-12

申请人： Lute Maleki ,  Anthony F. J. Levi ,  Steve Yao ,  Vladimir Ilchenko

发明人： Lute Maleki ,  Anthony F. J. Levi ,  Steve Yao ,  Vladimir Ilchenko

IPC分类号： G02F103

CPC分类号： G02B6/29343 ,  G02B6/12007 ,  G02F1/011 ,  G02F1/0118 ,  G02F1/035 ,  G02F1/3132 ,  G02F2203/15

摘要： Techniques and devices to modulate light by using a whispering gallery mode optical resonator exhibiting an electro-optic effect. An electrical signal is coupled into the optical resonator to change a dielectric constant of optical resonator and thus to modulate the optical output from the optical resonator.

摘要翻译： 通过使用具有电光效应的耳语画廊模式光学谐振器来调制光的技术和装置。 电信号耦合到光谐振器中以改变光谐振器的介电常数，从而调制来自光谐振器的光输出。

公开(公告)号：US5099489A

公开(公告)日：1992-03-24

申请号：US464268

申请日：1990-01-12

申请人： Anthony F. J. Levi ,  Ronald A. Nordin ,  Richard N. Nottenburg

发明人： Anthony F. J. Levi ,  Ronald A. Nordin ,  Richard N. Nottenburg

IPC分类号： G02F1/35 ,  G02F3/00 ,  H01S3/106 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/187 ,  H01S5/34 ,  H01S5/50

CPC分类号： B82Y20/00 ,  H01S3/1061 ,  H01S5/0601 ,  H01S5/187 ,  H01S5/34 ,  G02F3/00 ,  H01S5/0265 ,  H01S5/0624 ,  H01S5/06243 ,  H01S5/0625 ,  H01S5/3418 ,  H01S5/50

摘要： Disclosed is apparatus, exemplarily an electronic switching machine, that comprises novel and advantageous optical interconnection means. In particular, the apparatus comprises one or more digital electronic gates, and the output of the gate or gates is applied, without intervening amplifications, to a semiconductor laser whose radiation output is responsive to the applied electrical signal. The laser exemplarily is a quantum well laser of the type disclosed in U.S. patent application Ser. No. 407,608, U.S. Pat. No. 5,023,878, comprising at least one gain section and at least one loss section. The electrical output of the gate or gates is connected to the at least one loss section. Due to the ability of such lasers to be switched by means of a relatively very small current through the loss section, conventionally used drive amplifiers are not required in apparatus according to the invention, resulting in significantly reduced complexity and cost.

公开(公告)号：US5023878A

公开(公告)日：1991-06-11

申请号：US407608

申请日：1989-09-15

申请人： Kurt Berthold ,  Anthony F. J. Levi

发明人： Kurt Berthold ,  Anthony F. J. Levi

IPC分类号： G02F3/00 ,  H01S3/106 ,  H01S5/026 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/187 ,  H01S5/34 ,  H01S5/50

CPC分类号： B82Y20/00 ,  H01S3/1061 ,  H01S5/0601 ,  H01S5/187 ,  H01S5/34 ,  G02F3/00 ,  H01S5/0265 ,  H01S5/0624 ,  H01S5/06243 ,  H01S5/0625 ,  H01S5/3418 ,  H01S5/50

摘要： The inventive quantum well opto-electronic devices of cavity length L.sub.C comprise, in addition to a "gain" section, a "loss" section that is optically coupled to the gain section but electrically substantially isolated therefrom. Through change of the electrical bias on the loss section the modal gain of the cavity can be changed. Devices according to the invention are useful in a variety of applications. Exemplarily, by making (in an inventive laser) L.sub.C /L.sub.A greater than about 20 (L.sub.A is the length of the loss section) and making the electrical isolation between the gain section and the loss section greater than about 3 k.OMEGA., fast amplitude modulation of the laser radiation is possibly. By applying appropriate AR coatings to the cavity of an inventive device, a fast variable-gain optical amplifier can be made. Finally, an inventive laser can be switched electrically between two widely spaced wavelengths, the wavelength difference being at least 10 nm. This makes possible use of inventive devices in apparatus such as information storage systems, information processing systems, and communication systems. Methods of operating such apparatus are also disclosed.

摘要翻译： 本发明的空腔长度LC的量子阱光电器件除了“增益”部分之外还包括光学耦合到增益部分但与其基本上隔离的“损耗”部分。 通过改变损耗部分的电气偏压，可以改变空腔的模态增益。 根据本发明的装置在各种应用中是有用的。 示例性地，通过使（在本发明的激光器中）LC / LA大于约20（LA是损耗部分的长度）并且使得增益部分和损耗部分之间的电隔离大于约3k的OMEGA快速幅度调制 激光辐射是可能的。 通过将适当的AR涂层应用于本发明装置的空腔，可以制造快速可变增益光放大器。 最后，本发明的激光器可以在两个广泛间隔的波长之间电气切换，波长差为至少10nm。 这使得可以在诸如信息存储系统，信息处理系统和通信系统的装置中使用本发明的装置。 还公开了操作这种设备的方法。