利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.016 秒)

    Optical laser connector
    3.
    发明授权
    Optical laser connector 失效
    光学激光连接器

    公开(公告)号：US5212754A

    公开(公告)日：1993-05-18

    申请号：US815296

    申请日：1991-12-27

    申请人： Nagesh R. Basavanhally ,  D. Bruce Buchholz ,  Anthony F. J. Levi ,  Ronald A. Nordin

    发明人： Nagesh R. Basavanhally ,  D. Bruce Buchholz ,  Anthony F. J. Levi ,  Ronald A. Nordin

    IPC分类号： G02B6/38 ,  G02B6/42 ,  H01S5/022 ,  H01S5/40

    CPC分类号： G02B6/4249 ,  G02B6/3885 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/4031

    摘要： Connector apparatus for coupling an optical fiber cable with laser devices. The apparatus comprises a receptacle terminating aligned fibers of the optical cable in a planar surface perpendicular to a central axis of the receptacle. A plug mounts a plurality of laser devices each having an electrical terminal for connecting a laser device to an external source and an optical terminal aligned in a planar surface perpendicular to a central axis of the plug with each optical terminal positioned to correspond with one of the receptacle fibers. The plug slidably engages the receptacle and is affixed thereto to position the receptacle planar surface adjacent to and aligned with the plug planar surface to optically couple each laser device with a corresponding fiber of the optical cable.

    摘要翻译： 用于将光纤电缆与激光装置连接的连接器装置。 该装置包括一个插座，该插座在垂直于插座中心轴的平面上终止光缆的对准光纤。 插头安装多个激光装置，每个激光装置具有用于将激光装置连接到外部源的电端子和与垂直于插头的中心轴线的平面垂直的光学终端，每个光学终端被定位成与 插座纤维。 插头可滑动地接合插座并且被固定到其上以将插座平面表面定位成与插头平面相邻并对准插头平面，以将每个激光装置与光缆的相应光纤光学耦合。

    Heterostructure bipolar transistor
    4.
    发明授权
    Heterostructure bipolar transistor 失效
    异质结双极晶体管

    公开(公告)号：US5206524A

    公开(公告)日：1993-04-27

    申请号：US721913

    申请日：1991-06-20

    申请人： Young-Kai Chen ,  Anthony F. J. Levi ,  Richard N. Nottenburg ,  Morton Panish

    发明人： Young-Kai Chen ,  Anthony F. J. Levi ,  Richard N. Nottenburg ,  Morton Panish

    IPC分类号： H01L29/08 ,  H01L29/205 ,  H01L29/737

    CPC分类号： H01L29/7371 ,  H01L29/0895 ,  H01L29/205

    摘要： Improved heterojunction bipolar transistor (HBT) are disclosed. Inventive devices can attain high cut-off frequency (f.sub.T), exemplarily 80 GHz or higher, and high DC current gain (.beta.), exemplarily 25 or higher. The devices exhibit lateral scaling, permitting reduction in emitter stripe width without unacceptable decrease in .beta.. Exemplarily the stripe width is 1 .mu.m or less. The inventive HBTs are hot electron devices, with the hot electrons in the base region being spatially confined such that relatively few electrons reach the surface of the extrinsic base region. The relatively low bulk and surface recombination rate in the base of inventive HBTs is an important aspect of the invention and makes possible devices having relatively high .beta. and low power consumption. Appropriate choice of base material, namely, a semiconductor material having relatively low intrinsic surface recombination velocity, can result in further reduction of surface recombination, as can, for instance, the use of an appropriate non-alloyed metal base contact. Appropriate choice of collector material can result in improved ballistic transport through the collector depletion region, and novel selection criteria are disclosed. InP, InAs, and In.sub.0.53 Ga.sub.0.47 As are exemplary materials that meet these criteria. Use of a highly doped collector contact region, with dopant level within a relatively narrow concentration range, can also lead to improved device behavior, as can the use of a compound emitter that comprises one or more appropriately placed thin undoped heteroepitaxial layers.

    摘要翻译： 公开了改进的异质结双极晶体管（HBT）。 本发明的器件可以获得例如80GHz或更高的高截止频率（fT）和高直流电流增益（β），示例性地为25或更高。 这些器件表现出横向缩放，允许发射极条宽度的减小，而β不会有不可接受的降低。 条纹宽度为1μm以下。 本发明的HBT是热电子器件，其中基极区中的热电子被空间限制，使得相对少的电子到达外部基极区域的表面。 本发明HBT的基底中相对较低的体积和表面复合速率是本发明的重要方面，并使得可能的器件具有相对较高的β和低功耗。 基本材料的适当选择，即具有相对低的固有表面复合速度的半导体材料可以导致表面复合的进一步减少，例如可以使用合适的非合金金属基底接触。 收集器材料的适当选择可以导致通过集电极耗尽区的改进的弹道输送，并且公开了新的选择标准。 InP，InAs和In0.53Ga0.47A是满足这些标准的示例性材料。 使用具有相对窄的浓度范围内的掺杂剂水平的高度掺杂的集电极接触区域也可以导致改进的器件特性，使用包括一个或多个适当放置的未掺杂异质外延层的复合发射极也是如此。

    Bipolar hot electron transistor
    5.
    发明授权
    Bipolar hot electron transistor 失效
    双极热电子晶体管

    公开(公告)号：US4926221A

    公开(公告)日：1990-05-15

    申请号：US403003

    申请日：1989-09-07

    申请人： Anthony F. J. Levi

    发明人： Anthony F. J. Levi

    IPC分类号： H01L29/36 ,  H01L29/737

    CPC分类号： H01L29/365 ,  H01L29/7371 ,  H01L29/7373

    摘要： A hot electron transistor (HET) comprising features that can result in substantially improved device characteristics is disclosed. Among the features is a highly doped (typically more than about 10.sup.20 cm.sup.-3) thin base region, a thin (typically less than about 100 nm) collector depletion region, and a highly doped (typically more than about 10.sup.19 cm.sup.-3) collector contact region. Ballistic transport through the base region is possible, despite the high doping level, because the inelastic scattering rate can be relatively low in at least some highly doped compound semiconductors such as GaAs, AlGaAs, InGaAs, or InP. The elastic scattering rate in the base region can be relatively low if the dopant atoms have an appropriate non-random distribution. Techniques for achieving such a distribution are disclosed. Transistors according to the invention are expected to find advantageous use in applications that demand high speed, e.g., in repeaters in high capacity optical fiber transmission systems.

    摘要翻译： 公开了一种包括可导致显着改善的器件特性的特征的热电子晶体管（HET）。 特征之一是高掺杂（通常大于约1020cm -3）的薄基区，薄（通常小于约100nm）的集电极耗尽区，以及高掺杂（通常大于约1019cm-3）的集电极 接触区域 尽管掺杂水平高，但是由于在至少一些高掺杂的化合物半导体（例如GaAs，AlGaAs，InGaAs或InP）中非弹性散射速率可以相对较低，所以可以通过基极区域的弹道传输。 如果掺杂剂原子具有适当的非随机分布，则基区中的弹性散射速率可以相对较低。 公开了实现这种分配的技术。 期望根据本发明的晶体管在需要高速的应用中发现有利的用途，例如在大容量光纤传输系统中的中继器中。

    Hot electron transistor
    8.
    发明授权
    Hot electron transistor 失效
    热电子晶体管

    公开(公告)号：US4829343A

    公开(公告)日：1989-05-09

    申请号：US74127

    申请日：1987-07-17

    申请人： Anthony F. J. Levi

    发明人： Anthony F. J. Levi

    IPC分类号： H01L29/68 ,  H01L29/15 ,  H01L29/201 ,  H01L29/205 ,  H01L29/737 ,  H01L29/76

    CPC分类号： H01L29/7378 ,  H01L29/155 ,  H01L29/201 ,  H01L29/205 ,  H01L29/7371 ,  H01L29/7606

    摘要： An improved compound semiconductor hot electron transistor (HET) having room temperature current gain .beta.>10 is disclosed. Disclosed are also means by which improved HET performance can be obtained. Among these means is choice of the base layer material such that the hot electrons injected into the base have k.sub.i,2 /k.sub.i,1 >0.2, where k.sub.i,1 and k.sub.i,2 are the components of the electron wave vector respectively normal and parallel to the emitter/base interface. A further means is choice of collector material such that the hot electron velocity component normal to the base/collector interface remains relatively unchanged upon passage of the hot electron through the base/collector interface. For instance, an appropriate superlattice in the collector region may be used to achieve such matching. Causing quantization of the ambient charge carrier states in the base can reduce hot electron scattering in the base. In bipolar HETs such scattering can also be reduced if the effective heavy hole mass in the base is much larger (e.g.,.times.10) than the effective electron mass in the forward direction. A strained base layer may be used to achieve this.

    Apparatus comprising a quantum well device and method of operating the apparatus
    10.
    发明授权
    Apparatus comprising a quantum well device and method of operating the apparatus 失效
    包括量子阱装置和操作该装置的方法的装置

    公开(公告)号：US5023878A

    公开(公告)日：1991-06-11

    申请号：US407608

    申请日：1989-09-15

    申请人： Kurt Berthold ,  Anthony F. J. Levi

    发明人： Kurt Berthold ,  Anthony F. J. Levi

    IPC分类号： G02F3/00 ,  H01S3/106 ,  H01S5/026 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/187 ,  H01S5/34 ,  H01S5/50

    CPC分类号： B82Y20/00 ,  H01S3/1061 ,  H01S5/0601 ,  H01S5/187 ,  H01S5/34 ,  G02F3/00 ,  H01S5/0265 ,  H01S5/0624 ,  H01S5/06243 ,  H01S5/0625 ,  H01S5/3418 ,  H01S5/50

    摘要： The inventive quantum well opto-electronic devices of cavity length L.sub.C comprise, in addition to a "gain" section, a "loss" section that is optically coupled to the gain section but electrically substantially isolated therefrom. Through change of the electrical bias on the loss section the modal gain of the cavity can be changed. Devices according to the invention are useful in a variety of applications. Exemplarily, by making (in an inventive laser) L.sub.C /L.sub.A greater than about 20 (L.sub.A is the length of the loss section) and making the electrical isolation between the gain section and the loss section greater than about 3 k.OMEGA., fast amplitude modulation of the laser radiation is possibly. By applying appropriate AR coatings to the cavity of an inventive device, a fast variable-gain optical amplifier can be made. Finally, an inventive laser can be switched electrically between two widely spaced wavelengths, the wavelength difference being at least 10 nm. This makes possible use of inventive devices in apparatus such as information storage systems, information processing systems, and communication systems. Methods of operating such apparatus are also disclosed.

    摘要翻译： 本发明的空腔长度LC的量子阱光电器件除了“增益”部分之外还包括光学耦合到增益部分但与其基本上隔离的“损耗”部分。 通过改变损耗部分的电气偏压，可以改变空腔的模态增益。 根据本发明的装置在各种应用中是有用的。 示例性地，通过使（在本发明的激光器中）LC / LA大于约20（LA是损耗部分的长度）并且使得增益部分和损耗部分之间的电隔离大于约3k的OMEGA快速幅度调制 激光辐射是可能的。 通过将适当的AR涂层应用于本发明装置的空腔，可以制造快速可变增益光放大器。 最后，本发明的激光器可以在两个广泛间隔的波长之间电气切换，波长差为至少10nm。 这使得可以在诸如信息存储系统，信息处理系统和通信系统的装置中使用本发明的装置。 还公开了操作这种设备的方法。