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    Method for producing a semiconductor component
    2.
    发明申请
    Method for producing a semiconductor component 有权
    半导体部件的制造方法

    公开(公告)号：US20120225544A1

    公开(公告)日：2012-09-06

    申请号：US13407731

    申请日：2012-02-28

    申请人： Manfred SCHNEEGANS ,  Carsten AHRENS ,  Adolf KOLLER ,  Gerald LACKNER ,  Anton MAUDER ,  Hans-Joachim SCHULZE

    发明人： Manfred SCHNEEGANS ,  Carsten AHRENS ,  Adolf KOLLER ,  Gerald LACKNER ,  Anton MAUDER ,  Hans-Joachim SCHULZE

    IPC分类号： H01L21/22

    CPC分类号： H01L21/02658 ,  H01L21/76202 ,  H01L21/76224 ,  H01L29/8611 ,  Y10T428/218

    摘要： Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.

    摘要翻译： 公开了一种用于制造具有多晶半导体体区域的半导体部件的制造方法的实施例，其中在半导体部件部分中在半导体主体的第一和第二表面之间产生多晶半导体本体区域，其中具有波长 至少1064nm的光束以聚焦到半导体主体的半导体部件部分中的位置的方式被引入半导体本体，并且其中该位置处的辐射的功率密度小于1×108W / cm 2。

    LATERAL TRANSISTOR ON POLYMER
    3.
    发明申请
    LATERAL TRANSISTOR ON POLYMER 有权
    聚合物上的横向晶体管

    公开(公告)号：US20130299871A1

    公开(公告)日：2013-11-14

    申请号：US13471453

    申请日：2012-05-14

    申请人： Anton MAUDER ,  Eric GRAETZ

    发明人： Anton MAUDER ,  Eric GRAETZ

    IPC分类号： H01L27/082 ,  H01L21/331 ,  H01L29/739

    CPC分类号： H01L29/7394 ,  H01L27/082 ,  H01L27/12

    摘要： Representative implementations of devices and techniques provide a high-voltage device on a semiconductor substrate. An insulating polymer layer is formed on an opposite surface to the high-voltage device, the insulating polymer layer having a thickness of at least twice that of the semiconductor substrate.

    摘要翻译： 器件和技术的代表性实现在半导体衬底上提供高电压器件。 绝缘聚合物层形成在与高电压器件相对的表面上，绝缘聚合物层的厚度至少为半导体衬底的厚度的两倍。

    SEMICONDUCTOR DEVICE AND FABRICATION METHOD
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATION METHOD 有权
    半导体器件和制造方法

    公开(公告)号：US20110275202A1

    公开(公告)日：2011-11-10

    申请号：US13186470

    申请日：2011-07-20

    申请人： Anton MAUDER ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

    发明人： Anton MAUDER ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/425

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

    SEMICONDUCTOR DEVICE AND FABRICATION METHOD
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATION METHOD 有权
    半导体器件和制造方法

    公开(公告)号：US20120315747A1

    公开(公告)日：2012-12-13

    申请号：US13558467

    申请日：2012-07-26

    申请人： Anton MAUDER ,  Hans-Joachim SCHULZE ,  Frank HILLE ,  Holger SCHULZE ,  Manfred PFAFFENLEHNER ,  Carsten SCHÄFFER ,  Franz-Josef NIEDERNOSTHEIDE

    发明人： Anton MAUDER ,  Hans-Joachim SCHULZE ,  Frank HILLE ,  Holger SCHULZE ,  Manfred PFAFFENLEHNER ,  Carsten SCHÄFFER ,  Franz-Josef NIEDERNOSTHEIDE

    IPC分类号： H01L21/425

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。