Method and apparatus for background memory subsystem calibration

    公开(公告)号:US10242723B1

    公开(公告)日:2019-03-26

    申请号:US15846992

    申请日:2017-12-19

    Applicant: Apple Inc.

    Abstract: A method and apparatus for performing a background calibration in a memory subsystem is disclosed. A memory subsystem includes a memory controller coupled to a memory. The memory controller is coupled to receive data during reads from the memory on a functional data path and a duplicate data path. The memory controller further includes calibration circuitry. During reads of data conducted during normal operation, the calibration circuit calibrates a first delay locked loop (DLL) in the duplicate data path. A second DLL, in the functional data path, may be adjusted based on the calibrations conducted in the duplicate data path.

    Voltage Monitoring Circuit for Interface

    公开(公告)号:US20220397604A1

    公开(公告)日:2022-12-15

    申请号:US17347284

    申请日:2021-06-14

    Applicant: Apple Inc.

    Abstract: A voltage monitoring circuit is disclosed. An apparatus includes a first physical interface circuit and a real-time oscilloscope circuit configured to monitor a first voltage provided to the first physical interface circuit. The real-time oscilloscope is configured to receive an indication that an error was detected in data transmitted from the first physical interface to a second physical interface circuit. The real-time oscilloscope is further configured to provide for debug, to a host computer external to the first interface, information indicating a state of the first voltage at a time at which the error was detected.

    Systems and methods using neighboring sample points in memory subsystem calibration

    公开(公告)号:US09990973B1

    公开(公告)日:2018-06-05

    申请号:US15436212

    申请日:2017-02-17

    Applicant: Apple Inc.

    CPC classification number: G06F13/42 G11C2207/2254

    Abstract: A method and apparatus for using neighboring sampling points in a memory subsystem calibration is disclosed. In one embodiment, a memory subsystem includes a memory and a memory controller coupled thereto. A calibration unit in the memory controller is configured to perform calibrations of a data strobe signal and a reference voltage to determine eye openings for signals conveyed between the memory and the memory controller. Performing the calibration includes determining a number of different calibration points and computing initial scores for each of the calibration points. The method further includes calculating adjusted scores for each calibration point. For a given calibration point, the adjusted score includes weighted values of one or more calibration points that are adjacent thereto. The method further includes selecting a calibration point having the highest adjusted score as the calibrated value.

    Reference voltage prediction in memory subsystem

    公开(公告)号:US10408863B2

    公开(公告)日:2019-09-10

    申请号:US15848804

    申请日:2017-12-20

    Applicant: Apple Inc.

    Abstract: A method and apparatus for predicting a reference voltage in a memory subsystem is disclosed. A memory subsystem includes a memory controller coupled to a memory. The memory controller includes a lookup table having a number of different reference voltage values each corresponding to one of a number of different performance states. The memory controller further includes calibration circuitry configured to determine reference voltages for operation in various performance states. Responsive to returning to a performance state after operating in another, the calibration circuitry may restore the reference voltage to its most recently used value, and also obtain a predicted reference voltage. Calibrations may be performed at both the restored reference voltage and the predicted reference voltage obtained from the lookup table. The subsequent operating reference voltage may then be selected based on which of the two calibrations resulted in the largest data eye width.

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