公开(公告)号：US20180218905A1

公开(公告)日：2018-08-02

申请号：US15884129

申请日：2018-01-30

Applicant: Applied Materials, Inc.

Inventor： Beom Soo PARK ,  Dongsuh LEE ,  Hsiao-Lin YANG ,  Fu-Ting CHANG ,  Hsiang AN ,  Tsung-Yao SU

IPC: H01L21/205 ,  H01L21/02 ,  C23C16/505 ,  C23C16/517 ,  C23C16/44 ,  C23C16/455 ,  C23C8/36

CPC classification number: H01L21/205 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/517 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/68742 ,  H01L21/68757

Abstract: A method and apparatus for equalized plasma coupling is provided herein. Discontinuity marks, also known as golf tee mura, are eliminated or minimized by biasing or grounding lift pins disposed in openings towards the center of a substrate support. To prevent shorting between a biased or grounded lift pin and the substrate support, lift pins are electrically isolated from the substrate support. The electrical isolation of the lift pin includes coating the lift pins with an electrically insulating material or lining a respective substrate support opening with an electrically insulating material.

公开(公告)号：US20170178867A1

公开(公告)日：2017-06-22

申请号：US15365497

申请日：2016-11-30

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Allen K. LAU ,  Robin L. TINER ,  Gaku FURUTA ,  John M. WHITE ,  William Norman STERLING ,  Dongsuh LEE ,  Suhail ANWAR ,  Shinichi KURITA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/3321

Abstract: In one embodiment, a diffuser for a deposition chamber includes a plate having edge regions and a center region, and plurality of gas passages comprising an upstream bore and an orifice hole fluidly coupled to the upstream bore that are formed between an upstream side and a downstream side of the plate, and a plurality of grooves surrounding the gas passages, wherein a depth of the grooves varies from the edge regions to the center region of the plate.

公开(公告)号：US20150202739A1

公开(公告)日：2015-07-23

申请号：US14675379

申请日：2015-03-31

Applicant: Applied Materials, Inc.

Inventor： Dongsuh LEE ,  William N. STERLING ,  Beom Soo PARK ,  Soo Young CHOI

IPC: B24C1/06

CPC classification number: B24C1/06 ,  B24C1/00 ,  C23C16/4581 ,  H01L21/68757

Abstract: The present disclosure generally relates to a substrate support for use in a substrate processing chamber. A roughened substrate support reduces arcing within the chamber and also contributes to uniform deposition on the substrate. A substrate support may have a substrate support body having a surface roughness of between about 707 micro-inches and about 834 micro-inches. The substrate support may have an anodized coating on the substrate support.

Abstract translation: 本公开总体上涉及用于基板处理室的基板支撑件。 粗糙化的基底支撑件减少了腔室内的电弧，并且还有助于衬底上的均匀沉积。 衬底支撑件可以具有基板支撑体，其具有在约707微英寸和约834微英寸之间的表面粗糙度。 衬底支撑件可以在衬底支撑件上具有阳极氧化涂层。

公开(公告)号：US20170335459A1

公开(公告)日：2017-11-23

申请号：US15157076

申请日：2016-05-17

Applicant: Applied Materials, Inc.

Inventor： Young-jin CHOI ,  Beom Soo PARK ,  Dongsuh LEE ,  William Norman STERLING ,  Robin L. TINER ,  Shinichi KURITA ,  Suhail ANWAR ,  Soo Young CHOI ,  Yi CUI ,  Lia ZHAO ,  Dapeng WANG

IPC: C23C16/50 ,  C23C16/40 ,  C23C16/458 ,  H01L21/687 ,  H01L21/285 ,  H01L21/02

CPC classification number: C23C16/50 ,  C23C16/402 ,  C23C16/4581 ,  C23C16/4583 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785

Abstract: Embodiments described herein generally relate to a substrate support assembly. The substrate support assembly includes a support plate and a ceramic layer. The support plate has a top surface. The top surface includes a substrate receiving area configured to support a large area substrate and an outer area located outward of the substrate receiving area.

公开(公告)号：US20140027289A1

公开(公告)日：2014-01-30

申请号：US13944357

申请日：2013-07-17

Applicant: APPLIED MATERIALS, Inc.

Inventor： Dongsuh LEE ,  William N. STERLING ,  Beom Soo PARK ,  Soo Young CHOI

IPC: B24C1/00

CPC classification number: B24C1/06 ,  B24C1/00 ,  C23C16/4581 ,  H01L21/68757

Abstract: The present invention generally relates to a substrate support for use in a substrate processing chamber. A roughened substrate support reduces arcing within the chamber and also contributes to uniform deposition on the substrate. The roughening can occur in two steps. In a first step, the substrate support is bead blasted to initially roughen the surfaces. Then, the roughened surface is bead blasted with a finer grit to produce a substrate support with a surface roughness of between about 707 micro-inches and about 837 micro-inches. Following the surface roughening, the substrate support is anodized.

Abstract translation: 本发明一般涉及用于衬底处理室的衬底支撑件。 粗糙化的基底支撑件减少了腔室内的电弧，并且还有助于衬底上的均匀沉积。 粗糙化可以分两步进行。 在第一步骤中，将基底支撑体喷砂以最初粗糙化表面。 然后，粗糙表面用更细的砂砾进行喷砂处理以产生表面粗糙度在约707微英寸至约837微英寸之间的基底支撑体。 在表面粗糙化之后，将基底支撑体阳极氧化。